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61. 发明授权

US07165534B2 Fuel feed system 有权
标题翻译：燃料供给系统
公开(公告)号：US07165534B2
公开(公告)日：2007-01-23
申请号：US10274034
申请日：2002-10-21
申请人： Satoshi Usui , Hiroshi Odakura , Toru Onose , Atsuji Saito , Masami Abe , Hiroyuki Yamada
发明人： Satoshi Usui , Hiroshi Odakura , Toru Onose , Atsuji Saito , Masami Abe , Hiroyuki Yamada
IPC分类号： F02M37/04
CPC分类号： F02M37/0041 , F02D33/003 , F02M37/0047 , F02M55/04 , F02M59/366 , F02M59/44 , F02M63/0001 , F02M63/0225 , F02M2200/04 , F02M2200/24 , F02M2200/247 , F02M2200/315 , F04B11/0016 , F04B49/243 , F04B2205/01 , F04B2205/02 , F04B2205/05
摘要： A fuel feed system capable of feeding a fuel to fuel injection valves at a fuel pressure with improved stability is provided. A fuel feed system for an internal combustion engine including a fuel tank and a low-pressure pump for feeding the fuel in the fuel tank to fuel injection valves, is provided with a diaphragm type damper having a wave-shape cross section at a position in contact with the fuel. Also, in a high-pressure fuel feed pump including a pressurizing chamber for pressurizing the fuel, a plunger for pumping the fuel within the pressurizing chamber, an intake valve provided at a fuel inlet of the pressurizing chamber, a discharge valve provided at a fuel outlet of the pressurizing chamber, and a low-pressure chamber provided in an upstream of the intake valve, a mechanism for reducing fuel pressure pulsation is disposed in a space of the low-pressure chamber provided in the upstream of the intake valve, and a fuel pressure sensor for measuring the fuel pressure is mounted near the mechanism for reducing fuel pressure pulsation.
摘要翻译：提供一种能够以具有改善的稳定性的燃料压力向燃料喷射阀供给燃料的燃料供给系统。一种用于内燃机的燃料供给系统，其包括用于将燃料箱中的燃料供给到燃料喷射阀的燃料箱和低压泵，具有在其位置处具有波形截面的膜片式阻尼器与燃料接触。此外，在包括用于对燃料加压的加压室的高压燃料供给泵中，用于泵送加压室内的燃料的柱塞，设置在加压室的燃料入口的进气阀，设置在燃料的排出阀加压室的出口以及设置在进气阀的上游的低压室，设置在进气阀的上游的低压室的空间内配置有用于降低燃料压力脉动的机构，用于测量燃料压力的燃料压力传感器安装在用于降低燃料压力脉动的机构附近。

62. 发明申请

US20050157175A1 Image information processing system, image information processing apparatus, image information outputting method, code information processing apparatus and program thereof 审中-公开
标题翻译：图像信息处理系统，图像信息处理装置，图像信息输出方法，代码信息处理装置及程序
公开(公告)号：US20050157175A1
公开(公告)日：2005-07-21
申请号：US10975001
申请日：2004-10-28
申请人： Masahiro Takamatsu , Satoshi Usui , Hitoshi Ogatsu
发明人： Masahiro Takamatsu , Satoshi Usui , Hitoshi Ogatsu
IPC分类号： G06Q30/00 , G06T11/00 , H04N5/225 , H04N5/228 , H04N5/272 , H04N9/04
CPC分类号： G09G5/00 , G06Q30/0603 , G06T11/00 , H04N2005/2726
摘要： An image information processing system, which processes image information of a customer wearing products, includes: a customer information database, storing customer information in association with customer code information; and a product information database, enabling storage of product information, concerning the products that the customer wears, in association with order code information. Acquisition of the image information of the customer in the state of wearing products is enabled by a digital camera, and by means of a trial fitting catalog preparation process, a trial fitting catalog, in which the image information acquired by the digital camera unit are included with the customer code information of the customer, who wore the products, and the order code information on the products, is prepared and output by a printer.
摘要翻译：一种图像信息处理系统，处理客户穿着产品的图像信息，包括：客户信息数据库，与客户代码信息相关联地存储客户信息; 以及产品信息数据库，能够与订单代码信息相关联地存储关于客户所穿的产品的产品信息。通过数码相机可以获取穿戴产品状态下的顾客的图像信息，并通过试用装配目录准备处理，包括数字照相机单元获取的图像信息的试用装配目录与客户的客户代码信息，穿戴产品的人员以及产品的订单代码信息由打印机准备和输出。

63. 发明授权

US06727026B2 Semiconductor integrated circuit patterns 失效
标题翻译：半导体集成电路模式
公开(公告)号：US06727026B2
公开(公告)日：2004-04-27
申请号：US09815004
申请日：2001-03-23
申请人： Tatsuaki Kuji , Koji Hashimoto , Satoshi Usui , Shigeki Nojima
发明人： Tatsuaki Kuji , Koji Hashimoto , Satoshi Usui , Shigeki Nojima
IPC分类号： G03F900
CPC分类号： G03F1/36 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： In a method of designing patterns of a semiconductor integrated circuit, the shape of each of a plurality of opening patterns formed by a plurality of contact holes is formed into a rectangular shape; and the contact holes are arranged in such a manner that a long side of each of the rectangular opening patterns is opposite to a long side of an adjacent rectangular opening pattern, and the positions of both ends of the long sides are trued up. Furthermore, a photomask is used for manufacturing a semiconductor integrated circuit as designed by the above method of designing patterns of a semiconductor integrated circuit, in which a plurality of rectangular opening patterns are provided thereon as a plurality of rectangular opening patterns for contact holes; and the a plurality of rectangular opening patterns are arranged in such a manner that adjacent long sides thereof are opposite to each other, and the position of both ends of each long side is trued up. Besides, a semiconductor device comprises a semiconductor integrated circuit designed by using a method of designing a semiconductor integrated circuit.
摘要翻译：在设计半导体集成电路的图案的方法中，由多个接触孔形成的多个开口图案中的每一个的形状形成为矩形; 并且接触孔被布置成使得每个矩形开口图案的长边与相邻的矩形开口图案的长边相对，并且长边的两端的位置被修整。此外，光掩模用于制造半导体集成电路，如上述设计的半导体集成电路的图案的方法所设计的，其中多个矩形开口图案设置在其上，作为用于接触孔的多个矩形开口图案; 并且多个矩形开口图案被布置成使得其相邻的长边彼此相对，并且每个长边的两端的位置被修整。此外，半导体器件包括通过使用设计半导体集成电路的方法设计的半导体集成电路。

64. 发明授权

US4746536A Method for selective chemical plating 失效
标题翻译：选择性化学镀方法
公开(公告)号：US4746536A
公开(公告)日：1988-05-24
申请号：US945298
申请日：1986-12-17
申请人： Yukio Ichikawa , Satoshi Usui
发明人： Yukio Ichikawa , Satoshi Usui
IPC分类号： C23C18/20 , C23C18/16 , H05K1/03 , H05K3/18 , B05D3/06
CPC分类号： H05K3/185 , C23C18/1608 , C23C18/1612 , C23C18/204 , C23C18/24 , C23C18/285 , C23C18/30 , C23C18/405 , H05K1/0333
摘要： In the process of chemical plating on a formed article composed of a polyarylene sulfide or a composition comprising a polyarylene sulfide as the predominant resin component, a method for selective chemical plating is provided, which comprises irradiating a portion not to be plated of the formed article with light of a wavelength of 0.1 nm to 800 nm and then subjecting the formed article to chemical plating.
摘要翻译：在由聚芳硫醚或含有聚芳硫醚作为主要树脂成分的组合物形成的制品上进行化学镀处理的过程中，提供了一种选择性化学镀方法，其中包括对形成的制品用波长为0.1nm至800nm的光，然后对成形制品进行化学镀。

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