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61. 发明申请

US20060278976A1 Semiconductor device, method and manufacturing same, identification label and information carrier 审中-公开
标题翻译：半导体器件，方法和制造相同，识别标签和信息载体
公开(公告)号：US20060278976A1
公开(公告)日：2006-12-14
申请号：US10572982
申请日：2004-09-02
申请人： Ronald Dekker , Theodorus Michielsen , Antoon Tombeur , Johann-Heinrich Fock
发明人： Ronald Dekker , Theodorus Michielsen , Antoon Tombeur , Johann-Heinrich Fock
IPC分类号： H01L23/34
CPC分类号： H01L23/48 , H01L21/6835 , H01L21/6836 , H01L27/124 , H01L27/1266 , H01L2221/68327 , H01L2221/6835 , H01L2924/0002 , H01L2924/12044 , H01L2924/19041 , H01L2924/30105 , H01L2924/00
摘要： The semiconductor device (100) comprises an integrated circuit (20) and a first and a second contact face (31,33). These are connected with vertical interconnects (32,34) to the integrated circuit (20). This integrated circuit (20) is present in a semiconductor layer of a substrate. This substrate is absent in a non-active area (B). This leads to the fact that on the side faces (101) of the device (100) neither conductive material nor parts of the semiconductor substrate are exposed. On lamination of the device between two metallized foils into an identification label, the risk of short-circuitry due to undesired contact at the side face (101) of the device (100), is prevented thereby.
摘要翻译：半导体器件（100）包括集成电路（20）和第一和第二接触面（31,33）。这些与垂直互连（32,34）连接到集成电路（20）。该集成电路（20）存在于基板的半导体层中。在非活性区域（B）中不存在该底物。这导致在器件（100）的侧面（101）上既不暴露导电材料也不露出半导体衬底的部分的事实。在将两个金属箔之间的装置层压成识别标签时，由此防止由于装置（100）的侧面（101）处的不期望的接触而导致短路的风险。

62. 发明申请

US20060278265A1 Method of manufacturing a thermoelectric device and thermoelectric device obtained by means of such a method 审中-公开
标题翻译：通过这种方法获得的制造热电装置和热电装置的方法
公开(公告)号：US20060278265A1
公开(公告)日：2006-12-14
申请号：US10557621
申请日：2004-05-17
申请人： Martin Ouwerkerk , Ronald Dekker , Maxime Mellier , Sebastian Egner , Clemens Lasance
发明人： Martin Ouwerkerk , Ronald Dekker , Maxime Mellier , Sebastian Egner , Clemens Lasance
IPC分类号： H01L35/02 , H01L35/34
CPC分类号： H01L35/34
摘要： The invention relates to a method of manufacturing a thermoelectric device (10), in particular a thermoelectric generator (10), comprising a flexible foil (1) on which two groups (2, 3) of series-connected strip-shaped parts (2A, 3A) are formed, where the materials chosen for the two groups of parts (2A, 3A) are materials with a different thermoelectric coefficient and said two groups of parts are formed in a pattern (100) such that the connections (4) between one part (2A) of one group (2) and another part (3A) of the other group (3) are alternately positioned in two spaced apart areas (G1, G2) of the foil (1), and after the formation of the parts (2A, 3A) on a substrate (5), the foil (1) is attached to the stripshaped parts (2A, 3A), after which the substrate (5) is removed. According to the invention, for the substrate (5) use is made of a rigid (=relatively thick) substrate (5), and before the substrate (5) is removed a rigid (=relatively thick) carrier plate (6) is attached to the foil (1) that is removed again from the foil (1) after removal of the rigid substrate (5). In this way, the method is particularly suitable for the use of semiconductor substrates (5) which can be rapidly removed by chemical-mechanical polishing. Preferably, the foil (1) with the device (10) is folded or coiled before use.
摘要翻译：本发明涉及一种制造热电装置（10）的方法，特别是一种热电发生器（10），其包括柔性箔（1），两组（2,3）串联连接的带状部件（2 A，3A），其中为两组部件（2A，3A）选择的材料是具有不同热电系数的材料，并且所述两组部件以图案（100）形成，使得连接在另一组（3）的一组（2）的一部分（2A）和另一组（3）的另一部分（3A）之间的（4）交替地位于箔（1）的两个间隔开的区域（G 1，G 2）），并且在基板（5）上形成部件（2A，3A）之后，将箔（1）附接到条状部件（2A，3A），然后将基板（5）删除。根据本发明，对于基底（5），使用刚性（=相对较厚）的基底（5），并且在移除基底（5）之前，附接刚性（=较厚）的载体板（6）涉及在去除刚性基材（5）之后再次从箔（1）上除去的箔（1）。以这种方式，该方法特别适用于可通过化学机械抛光快速去除的半导体衬底（5）。优选地，具有装置（10）的箔（1）在使用之前被折叠或盘绕。

63. 发明授权

US07027269B2 Method of manufacturing a magnetic head having a planar coil 失效
标题翻译：制造具有平面线圈的磁头的方法
公开(公告)号：US07027269B2
公开(公告)日：2006-04-11
申请号：US09923611
申请日：2001-08-07
申请人： Frank Cornelis Penning , Ronald Dekker , Henricus Godefridus Rafael Maas
发明人： Frank Cornelis Penning , Ronald Dekker , Henricus Godefridus Rafael Maas
IPC分类号： G11B5/127
CPC分类号： G11B5/17 , G11B5/60 , G11B11/10534 , G11B11/10554 , G11B11/1058
摘要： A simple method of manufacturing a magnetic head having a head face and including a planar magnetic coil (7) which extends parallel to the head face. According to the method, the magnetic coil is formed at a first side of a first substrate (1). Thereafter, the first substrate provided with the magnetic coil is adhered with its first side to a side of a second substrate, whereafter material of the first substrate is removed from a second side of the first substrate (9), the second side being turned away from the first side, in order to form the head face, in such a manner that the magnetic coil is situated near to the head face.
摘要翻译：一种制造具有头部表面并包括平行于头部表面延伸的平面磁性线圈（7）的磁头的简单方法。根据该方法，在第一基板（1）的第一侧形成有电磁线圈。此后，设置有磁性线圈的第一基板的第一侧粘附到第二基板的一侧，之后从第一基板（9）的第二侧去除第一基板的材料，将第二侧面转回从第一侧开始，以使磁性线圈靠近头部表面的方式形成头部面。

64. 发明申请

US20050140003A1 Semiconductor device with a protective security coating and method of manufacturing the same 有权
标题翻译：具有保护性安全涂层的半导体器件及其制造方法
公开(公告)号：US20050140003A1
公开(公告)日：2005-06-30
申请号：US10508745
申请日：2003-03-20
申请人： Robertus Adrianus Wolters , Petra De Jongh , Ronald Dekker
发明人： Robertus Adrianus Wolters , Petra De Jongh , Ronald Dekker
IPC分类号： H01L23/29 , G06K19/073 , G06K19/077 , H01L21/316 , H01L23/12 , H01L23/28 , H01L23/31 , H01L23/58 , H01L23/48
CPC分类号： H01L23/573 , G06K19/07372 , H01L23/28 , H01L27/02 , H01L2924/0002 , Y10S257/922 , H01L2924/00
摘要： The semiconductor device comprises a substrate (10) with a first (1) and an opposed second side (2), at which first side a plurality of transistors and interconnects is present, which are covered by a protective security covering (16), which device is further provided with bond pad regions (14). The protective security covering (16) comprises a substantially non-transparent and substantially chemically inert security coating (16), and the bond pad regions (14) are accessible from the second side of the substrate (10). The semiconductor device can be suitable made with a substrate transfer technique, in which a second substrate (24) is provided at the protective security covering (16).
摘要翻译：半导体器件包括具有第一（1）和相对的第二侧（2）的衬底（10），第一侧上存在多个晶体管和互连，其被保护性安全覆盖物（16）覆盖，器件还设置有接合焊盘区域（14）。保护性保护罩（16）包括基本上不透明且基本上化学惰性的安全涂层（16），并且接合焊盘区域（14）可从衬底（10）的第二侧接近。该半导体器件可以适合用衬底转移技术制成，其中第二衬底（24）设置在保护性防护罩（16）处。

65. 发明授权

US06698073B2 Method of manufacturing a piezoelectric filter with an acoustic resonator situated on an acoustic reflector layer formed by a carrier substrate 有权
标题翻译：制造具有位于由载体基板形成的声反射层上的声谐振器的压电滤波器的方法
公开(公告)号：US06698073B2
公开(公告)日：2004-03-02
申请号：US09790298
申请日：2001-02-21
申请人： Ronald Dekker , Henricus Godefridus Rafael Maas
发明人： Ronald Dekker , Henricus Godefridus Rafael Maas
IPC分类号： H04R1710
CPC分类号： H03H9/564 , H03H3/02 , H03H2003/025 , Y10T29/42 , Y10T29/49128 , Y10T29/49155
摘要： A method of manufacturing a piezoelectric filter with a resonator comprising a layer of a piezoelectric material (1) which is provided with an electrode (2,3) on either side, which resonator is situated on an acoustic reflector layer (4) formed on a surface (6) of a carrier substrate (7). In the method, the layer of piezoelectric material (1) is provided on a surface (8) of an auxiliary substrate (9), after which a first electrode (2) is formed on the layer of piezoelectric material (1). The acoustic reflector layer (4) is provided on and next to the first electrode (2), and the structure thus formed is secured with the side facing away from the auxiliary substrate (9) on the carrier substrate (7). The auxiliary substrate (9) is removed and a second electrode (3) situated opposite the first electrode (2) is provided.
摘要翻译：一种制造具有谐振器的压电滤波器的方法，该谐振器包括在任一侧上设置有电极（2,3）的压电材料（1）的层，该谐振器位于形成在载体基板（7）的表面（6）。在该方法中，压电材料层（1）设置在辅助基板（9）的表面（8）上，之后在压电材料层（1）上形成第一电极（2）。声反射器层（4）设置在第一电极（2）上并且紧邻第一电极（2），并且如此形成的结构被固定在载体基板（7）上的背离辅助基板（9）的一侧。移除辅助基板（9），并且设置与第一电极（2）相对的第二电极（3）。

66. 发明授权

US06593628B2 Semiconductor device and method of manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06593628B2
公开(公告)日：2003-07-15
申请号：US09819280
申请日：2001-03-28
申请人： Ronald Dekker , Henricus Godefridus Rafael Maas , Jan Willem Slotboom , Freerk Van Rijs
发明人： Ronald Dekker , Henricus Godefridus Rafael Maas , Jan Willem Slotboom , Freerk Van Rijs
IPC分类号： H01L2701
CPC分类号： H01L27/0825 , H01L21/8222 , H01L21/84 , H01L27/088 , H01L27/1203
摘要： The invention relates to an essentially discrete semiconductor device comprising a semiconductor body (10) having a first, preferably bipolar, transistor (T1) with a first region (1) forming a collector (1) of T1, and a second, preferably also bipolar, transistor (T2) with a second region (2) forming a collector (2) of T2, which transistors (T1, T2) are in a cascode configuration wherein the collector (1) of T1is connected to the emitter (4) of T2. Such a device cannot suitably be used in a base station for mobile communication. According to the invention, the first region (1) and the second region (2) are positioned next to each other within a semiconductor region (5), a part of which situated below the first region (1) is provided with a higher doping concentration at the location of T1. In this way, T1 has a low collector-emitter breakdown voltage and a high cutoff frequency, whereas for T2 said voltage and frequency are, respectively, high(er) and low(er). The resultant device is very suitable, on the one hand, for a high voltage application, for example 28 V, and a high power application, for example 100 W and, on the other hand, the device can still operate at a very high speed and hence is very suitable for the above application. Moreover, the device can be manufactured very easily using a method according to the invention. Preferably, the device is rendered suitable for surface mounting, and the semiconductor body is attached to an isolating substrate (20), while the parts thereof that are situated outside T1 and T2 are removed.
摘要翻译：本发明涉及一种基本上分立的半导体器件，其包括具有第一优选为双极晶体管（T1）的半导体本体（10），其中第一区域（1）形成为T1的集电极（1），第二区域（1）优选为双极晶体管，具有形成T2的集电极（2）的第二区域（2）的晶体管（T2），所述晶体管（T1，T2）处于共源共栅结构，其中T1的集电极（1）连接到T2的发射极（4）。这样的设备不能适用于用于移动通信的基站。根据本发明，第一区域（1）和第二区域（2）在半导体区域（5）内彼此相邻定位，其一部分位于第一区域（1）的下方，具有较高的掺杂集中在T1的位置。以这种方式，T1具有低集电极 - 发射极击穿电压和高截止频率，而对于T2，所述电压和频率分别为高（呃）和低（呃）。一方面，所得到的装置非常适合于高压应用，例如28V，以及高功率应用，例如100W，另一方面，该装置仍然可以以非常高的速度运行因此非常适合于上述应用。此外，可以使用根据本发明的方法非常容易地制造该装置。优选地，该装置适于表面安装，并且半导体主体附接到隔离衬底（20），而位于T1和T2外部的部分被去除。

67. 发明授权

US06580583B1 Magnetic head with integrated circuit on a rigid body 失效
标题翻译：磁头与集成电路在刚体上
公开(公告)号：US06580583B1
公开(公告)日：2003-06-17
申请号：US08966229
申请日：1997-11-07
申请人： Derk J. Adelerhof , Ronald Dekker , Henricus G. R. Maas
发明人： Derk J. Adelerhof , Ronald Dekker , Henricus G. R. Maas
IPC分类号： G11B5147
CPC分类号： G11B5/127 , G11B5/31
摘要： A thin-film magnetic head has a semiconductor substrate in which there is an integrated circuit, and on which a magnetic layer structure is arranged. During manufacturing the integrated circuit is formed on one side of the semiconductor substrate, and that side of the semiconductor substrate is then secured to a carrier body by a securing layer. The substrate may then be ground or etched to a thickness less than 35&mgr;m before forming the magnetic layer structure on the opposite side. Securing to the carrier body prevents deformation of the layer structure during manufacturing, so that the resulting head has reproducible properties. Preferably a support body is secured over the layer structure. The head face is then formed such that the layer structure and the support and carrier bodies terminate in it.
摘要翻译：薄膜磁头具有半导体衬底，其中存在集成电路，并且在其上布置有磁性层结构。在制造期间，集成电路形成在半导体衬底的一侧上，然后通过固定层将半导体衬底的该侧固定到载体上。然后可以在形成相对侧的磁性层结构之前将衬底研磨或蚀刻至小于35μm的厚度。固定到承载体防止制造过程中的层结构的变形，从而得到的头具有可重现的性质。优选地，支撑体固定在层结构上。然后形成头部表面，使得层结构和支撑体和载体主体终止于其中。

68. 发明授权

US06551890B2 Method of manufacturing a semiconductor device comprising a bipolar transistor and a capacitor 有权
公开(公告)号：US06551890B2
公开(公告)日：2003-04-22
申请号：US09520061
申请日：2000-03-07
申请人： Ronald Dekker , Petrus H. C. Magnee
发明人： Ronald Dekker , Petrus H. C. Magnee
IPC分类号： H01L218222
CPC分类号： H01L28/40 , H01L27/0658 , H01L29/66272
摘要： A method of manufacturing a semiconductor device comprising a poly-emitter transistor (1) and a capacitor (2). A base electrode (14), a first electrode (16, 37) and an emitter window (18) are formed at the same time in a first polysilicon layer (13) covered with an insulating layer (25). Subsequently, the side walls of the electrodes (20, 39) and the wall (23) of the emitter window are covered at the same time with insulating spacers (22, 44) by depositing a layer of an insulating material, followed by an anisotropic etching process. The base (8) of the transistor is formed by ion implantation. The emitter (9) is formed by diffusion, from an emitter electrode (30) formed in a second polysilicon layer. Preferably, the first electrode of the capacitor consists of mutually connected strips (37).

69. 发明授权

US06323533B1 Semiconductor device with an operating frequency larger than 50 MHz comprising a body composed of a soft ferrite material 失效
标题翻译：工作频率大于50MHz的半导体器件包括由软铁氧体材料构成的主体
公开(公告)号：US06323533B1
公开(公告)日：2001-11-27
申请号：US09556547
申请日：2000-04-24
申请人： Pieter Jan Van Der Zaag , Ronald Dekker , Wilhelmus Mathias Clemens Dolmans
发明人： Pieter Jan Van Der Zaag , Ronald Dekker , Wilhelmus Mathias Clemens Dolmans
IPC分类号： H01L2900
CPC分类号： H01F17/0006 , H01L27/08
摘要： A semiconductor device (1) with an operating frequency above 50 MHz comprises a body (2) composed of a soft ferrite material, which body (2) has a surface (3) to which a semiconductor element (4), a pattern of conductors (5,6) and a passive element in the form of a planar inductor (7) are fastened by means of a layer (8) of adhesive. In order to reduce the manufacturing costs of the semiconductor device without adversely affecting the performance of the semiconductor device performance, a soft ferrite material is applied having a ferromagnetic resonance frequency smaller than the operating frequency of the semiconductor device.
摘要翻译：工作频率高于50MHz的半导体器件（1）包括由软铁氧体材料构成的主体（2），所述主体（2）具有与半导体元件（4）一起的表面（3），导体图案（5,6）和平面电感器（7）形式的无源元件通过粘合剂层（8）固定。为了降低半导体器件的制造成本而不会不利地影响半导体器件性能的性能，施加具有小于半导体器件的工作频率的铁磁共振频率的软铁氧体材料。

70. 发明授权

US6104081A Semiconductor device with semiconductor elements formed in a layer of semiconductor material glued on a support wafer 失效
标题翻译：具有半导体元件的半导体器件形成在粘合在支撑晶片上的半导体材料层中
公开(公告)号：US6104081A
公开(公告)日：2000-08-15
申请号：US80784
申请日：1998-05-18
申请人： Ronald Dekker , Henricus G. R. Maas , Steffen Wilhelm Hahn
发明人： Ronald Dekker , Henricus G. R. Maas , Steffen Wilhelm Hahn
IPC分类号： H01L21/02 , H01L21/20 , H01L21/336 , H01L21/58 , H01L21/60 , H01L21/68 , H01L23/498 , H01L27/12 , H01L29/786 , H01L29/06 , H01L23/58
CPC分类号： H01L21/6835 , H01L23/49811 , H01L24/29 , H01L24/81 , H01L24/83 , H01L27/1203 , H01L2221/68359 , H01L2221/68363 , H01L2224/2919 , H01L2224/81801 , H01L2224/8319 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01015 , H01L2924/01033 , H01L2924/0665 , H01L2924/07802 , H01L2924/1305 , H01L2924/1306 , H01L2924/30105 , Y10S438/928 , Y10S438/958
摘要： A method of manufacturing a semiconductor device which starts with a semiconductor wafer (1) which is provided with a layer of semiconductor material (4) lying on an insulating layer (3) at a first side (2). Semiconductor elements (5) and conductor tracks (14) are formed on this first side (2) of the semiconductor wafer (1). Then the semiconductor wafer (1) is fastened with this first side (2) to a support wafer (15), and material (18) is removed from the semiconductor wafer (1) from its other, second side (17) until the insulating layer (3) has been exposed. The method starts with a semiconductor wafer (1) whose insulating layer (3) is an insulating as well as a passivating layer. The semiconductor device must be provided with a usual passivating layer after its manufacture in order to protect it against moisture and other influences. In the method described here, such a passivating layer is present already before the manufacture of the semiconductor device starts.
摘要翻译：一种制造半导体器件的方法，该半导体器件从在第一侧（2）上设置有位于绝缘层（3）上的半导体材料层（4）的半导体晶片（1）开始。在半导体晶片（1）的第一侧（2）上形成有半导体元件（5）和导体轨迹（14）。然后将半导体晶片（1）与该第一侧（2）紧固到支撑晶片（15），并且从其另一侧（17）将材料（18）从半导体晶片（1）移除，直到绝缘层（3）暴露。该方法从其绝缘层（3）和绝缘层的半导体晶片（1）开始。半导体器件在其制造之后必须设置有通常的钝化层，以便防止其受潮和其它影响。在这里描述的方法中，这种钝化层在半导体器件的制造开始之前已经存在。

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