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    • 61. 发明授权
    • On-chip power supply noise detector
    • 片上电源噪声检测器
    • US07355429B2
    • 2008-04-08
    • US11089215
    • 2005-03-24
    • Keith A. JenkinsAnuja SehgalPeilin Song
    • Keith A. JenkinsAnuja SehgalPeilin Song
    • G01R31/02
    • G01R31/3004G01R19/16552
    • Techniques for on-chip detection of integrated circuit power supply noise are disclosed. By way of example, a technique for monitoring a power supply line in an integrated circuit includes the following steps/operations. A first signal and a second signal are preconditioned. The first signal is representative of a voltage of the power supply line being monitored. The second signal is representative of a voltage of a reference power supply line. Preconditioning includes shifting respective levels of the voltages such that the voltages are within an output voltage range of comparator circuitry. Then, the preconditioned first signal and the preconditioned second signal are compared in accordance with the comparator circuitry. Comparison includes detecting when a difference exists between the voltage level of the preconditioned first signal and the voltage level of the preconditioned second signal.
    • 公开了片上检测集成电路电源噪声的技术。 作为示例,用于监视集成电路中的电源线的技术包括以下步骤/操作。 第一信号和第二信号被预处理。 第一信号代表被监测的电源线的电压。 第二信号代表参考电源线的电压。 预处理包括移动电压的各个电平,使得电压在比较器电路的输出电压范围内。 然后,根据比较器电路对预处理的第一信号和预处理的第二信号进行比较。 比较包括检测预处理的第一信号的电压电平与预处理的第二信号的电压电平之间的差异。
    • 62. 发明申请
    • ON-CHIP POWER SUPPLY NOISE DETECTOR
    • 片上电源噪声检测器
    • US20080036477A1
    • 2008-02-14
    • US11874528
    • 2007-10-18
    • Keith JenkinsAnuja SehgalPeilin Song
    • Keith JenkinsAnuja SehgalPeilin Song
    • G01R27/08
    • G01R31/3004G01R19/16552
    • Techniques for on-chip detection of integrated circuit power supply noise are disclosed. By way of example, a technique for monitoring a power supply line in an integrated circuit includes the following steps/operations. A first signal and a second signal are preconditioned. The first signal is representative of a voltage of the power supply line being monitored. The second signal is representative of a voltage of a reference power supply line. Preconditioning includes shifting respective levels of the voltages such that the voltages are within an input voltage range of comparator circuitry. Then, the preconditioned first signal and the preconditioned second signal are compared in accordance with the comparator circuitry. Comparison includes detecting when a difference exists between the voltage level of the preconditioned first signal and the voltage level of the preconditioned second signal.
    • 公开了片上检测集成电路电源噪声的技术。 作为示例,用于监视集成电路中的电源线的技术包括以下步骤/操作。 第一信号和第二信号被预处理。 第一信号代表被监测的电源线的电压。 第二信号代表参考电源线的电压。 预处理包括移动电压的各个电平,使得电压在比较器电路的输入电压范围内。 然后,根据比较器电路对预处理的第一信号和预处理的第二信号进行比较。 比较包括检测预处理的第一信号的电压电平与预处理的第二信号的电压电平之间的差异。
    • 64. 发明授权
    • VLSI chip test power reduction
    • VLSI芯片测试功耗降低
    • US06816990B2
    • 2004-11-09
    • US10058485
    • 2002-01-28
    • Peilin SongTimothy J. KoprowskiUlrich BaurFranco Motika
    • Peilin SongTimothy J. KoprowskiUlrich BaurFranco Motika
    • G01R3128
    • G01R31/31721G01R31/31707G01R31/318307G01R31/318502G01R31/318522G01R31/3187
    • LBIST and weighted LBIST tests are performed simultaneously on different portions of the tested object. This new test methodology and design change achieves the same test coverage and test time as the traditional test strategy with dramatic power reduction during test. It can be applied at wafer, chip, MCM, and system levels of test. Most importantly, it does not need new tools for support. Current test software will work as it does with the traditional test strategy. Scheduling the LBIST and weighted LBIST tests in the same test session reduces the overall power consumption because weighted LBIST testing consumes much less power than flat LBIST testing. In the same test session, if some parts of the logic is tested using weighted LBIST while the others were tested using LBIST, the power consumed by the circuit element at any given time is reduced.
    • LBIST和加权LBIST测试在测试对象的不同部分上同时进行。 这种新的测试方法和设计变化与传统的测试策略相比,测试覆盖率和测试时间都大大降低。 它可以应用于晶圆,芯片,MCM和系统测试级别。 最重要的是,它不需要新的支持工具。 当前的测试软件将与传统的测试策略一样工作。 在相同测试会话中调度LBIST和加权LBIST测试降低了整体功耗,因为加权LBIST测试比平面LBIST测试消耗的功率少得多。 在相同的测试会话中,如果使用加权LBIST测试逻辑的某些部分,而使用LBIST测试其他部分,则电路元件在任何给定时间消耗的功率降低。
    • 65. 发明授权
    • Angular spectrum tailoring in solid immersion microscopy for circuit analysis
    • 用于电路分析的固体浸液显微镜中的角度光谱裁剪
    • US07961307B2
    • 2011-06-14
    • US12911781
    • 2010-10-26
    • Stephen Bradley IppolitoDarrell L. MilesPeilin SongJohn D. Sylvestri
    • Stephen Bradley IppolitoDarrell L. MilesPeilin SongJohn D. Sylvestri
    • G01N21/00
    • G01R31/311
    • A structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection image for monochromatic light in an optical path from an optical microscope through a SIL/NAIL and into the chip. The index of refraction of the substrate exceeds that of the dielectric interconnect and is equal to that of the SIL/NAIL. A second electrical response image of the chip is overlayed on a second reflection image for the monochromatic light in an optical path in which an optical stop prevents all subcritical angular components of the monochromatic light from being incident on the SIL/NAIL. If the second electrical response image includes or does not include the spot, then the fault is in the substrate or the dielectric interconnect, respectively.
    • 用于定位半导体芯片中的故障的结构。 芯片包括电介质互连上的衬底。 包括代表故障的点的芯片的第一电响应图像重叠在从光学显微镜通过SIL / NAIL并进入芯片的光路中的单色光的第一反射图像上。 衬底的折射率超过电介质互连的折射率,等于SIL / NAIL的折射率。 芯片的第二电响应图像覆盖在光路中的单色光的第二反射图像上,其中光学停止器防止单色光的所有亚临界角分量入射到SIL / NAIL上。 如果第二电响应图像包括或不包括点,则故障分别在基板或电介质互连中。
    • 66. 发明申请
    • ANGULAR SPECTRUM TAILORING IN SOLID IMMERSION MICROSCOPY FOR CIRCUIT ANALYSIS
    • 用于电路分析的固体显微镜中的角度光谱定标
    • US20090189630A1
    • 2009-07-30
    • US12020157
    • 2008-01-25
    • Stephen Bradley IppolitoDarrell L. MilesPeilin SongJohn D. Sylvestri
    • Stephen Bradley IppolitoDarrell L. MilesPeilin SongJohn D. Sylvestri
    • G01R31/26
    • G01R31/311
    • A method and structure for locating a fault in a semiconductor chip. The chip includes a substrate on a dielectric interconnect. A first electrical response image of the chip, which includes a spot representing the fault, is overlayed on a first reflection image for monochromatic light in an optical path from an optical microscope through a SIL/NAIL and into the chip. The index of refraction of the substrate exceeds that of the dielectric interconnect and is equal to that of the SIL/NAIL. A second electrical response image of the chip is overlayed on a second reflection image for the monochromatic light in an optical path in which an optical stop prevents all subcritical angular components of the monochromatic light from being incident on the SIL/NAIL. If the second electrical response image includes or does not include the spot, then the fault is in the substrate or the dielectric interconnect, respectively.
    • 一种用于定位半导体芯片中的故障的方法和结构。 芯片包括电介质互连上的衬底。 包括代表故障的点的芯片的第一电响应图像重叠在从光学显微镜通过SIL / NAIL并进入芯片的光路中的单色光的第一反射图像上。 衬底的折射率超过电介质互连的折射率,等于SIL / NAIL的折射率。 芯片的第二电响应图像覆盖在光路中的单色光的第二反射图像上,其中光学停止器防止单色光的所有亚临界角分量入射到SIL / NAIL上。 如果第二电响应图像包括或不包括点,则故障分别在基板或电介质互连中。