专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US4554565A Method of producing reversible thermochromic display 失效
标题翻译：生产可逆热变色显示的方法
公开(公告)号：US4554565A
公开(公告)日：1985-11-19
申请号：US597292
申请日：1984-04-06
申请人： Tutomu Kito , Norikazu Nakasuji , Takashi Kataoka , Hiroshi Inagaki , Yutaka Shibahashi
发明人： Tutomu Kito , Norikazu Nakasuji , Takashi Kataoka , Hiroshi Inagaki , Yutaka Shibahashi
IPC分类号： B41M5/28 , G01K11/12 , B41M5/18
CPC分类号： B41M5/284 , G01K11/12 , B41M5/305 , Y10S428/913 , Y10T428/24835
摘要： A method for producing a reversible thermochromic display composed of multiple, overlapping color images. In accordance with the invention, a plurality of overlapping colored image layers are formed on a support, at least one of which layers provides a reversible thermochromic image. Each of the images on the various layers has a different visual density, and at least one reversible thermochromic image changes color at a temperature below or above a predetermined temperature and provides a color which is more intense and more easily discernible than the colors of the other ones of the images.
摘要翻译：一种用于制造由多个重叠的彩色图像组成的可逆热致变色显示器的方法。根据本发明，在支撑体上形成多个重叠的彩色图像层，其中至少一个层提供可逆的热变色图像。各层中的每个图像具有不同的视觉密度，并且至少一个可逆热变色图像在低于或高于预定温度的温度下改变颜色，并提供比其他颜色更加强烈和更容易辨别的颜色一些图像。

62. 发明授权

US4421560A Thermochromatic materials 失效
标题翻译：热色材料
公开(公告)号：US4421560A
公开(公告)日：1983-12-20
申请号：US366514
申请日：1982-04-08
申请人： Tutomu Kito , Norikazu Nakasuji , Takashi Kataoka , Hiroshi Inagaki , Yutaka Shibahashi
发明人： Tutomu Kito , Norikazu Nakasuji , Takashi Kataoka , Hiroshi Inagaki , Yutaka Shibahashi
IPC分类号： C09K9/02 , B41M5/30 , B41M5/337 , C09D5/26 , C09D11/00 , G01D7/00 , G01K11/12 , C09D11/02
CPC分类号： G01D7/005 , B41M5/305 , C09D11/50 , C09D5/26
摘要： A reversible thermochromic material is disclosed in the application. The material is comprised of (A) an electron-donating chromatic organic compound and (B) an acidic phosphoric acid ester compound or metal salt thereof, wherein Components (A) and (B) are contained in a weight ratio of 1:1/10 to 50 by weight. The material may also contain a third Component (C) for controlling the temperature of coloration/decoloration of the thermochromatic material. The thermochromatic material undergoes reversible metachromatism at a temperature within the range of -50.degree. C. to 120.degree. C. Furthermore, the reversible thermochromic material may be contained within microcapsules.
摘要翻译：在本申请中公开了可逆热变色材料。该材料由（A）给电子的有机有机化合物和（B）酸性磷酸酯化合物或其金属盐组成，其中组分（A）和（B）的重量比为1:1， 10〜50重量份。该材料还可以包含用于控制热色材料的着色/脱色温度的第三组分（C）。该热色材料在-50℃至120℃的温度下经历可逆的变质反应。此外，可逆的热变色材料可以包含在微胶囊内。

63. 发明授权

US08700201B2 Vibration suppressing device 有权
标题翻译：振动抑制装置
公开(公告)号：US08700201B2
公开(公告)日：2014-04-15
申请号：US13226143
申请日：2011-09-06
申请人： Kiyoshi Yoshino , Hiroshi Inagaki , Tomoharu Ando , Hiroshi Ueno , Akihide Hamaguchi , Hajimu Ishii
发明人： Kiyoshi Yoshino , Hiroshi Inagaki , Tomoharu Ando , Hiroshi Ueno , Akihide Hamaguchi , Hajimu Ishii
IPC分类号： G06F19/00 , G01F17/00 , G01L7/00 , G01F23/00 , G01N11/00
CPC分类号： G05B19/404 , B23Q17/0976 , B24B55/00 , G05B2219/37434 , G05B2219/37513 , G05B2219/41256
摘要： A vibration suppressing device includes a memory unit storing a stable rotation speed calculated by an arithmetical unit in association with a rotation speed range that includes the stable rotation speed, in which, when a command rotation speed that is a rotation speed of a rotary shaft is inputted in starting machining operation by rotation of the rotary shaft and, the arithmetical unit determines whether the command rotation speed is included in the rotation speed range or not, reads out the stable rotation speed when the command rotation speed is included in the rotation speed range and outputs the stable rotation speed to an NC device instead of the command rotation speed, and starts the machining operation at the stable rotation speed.
摘要翻译：振动抑制装置包括存储单元，该存储单元与包括稳定转速的转速范围相关联地存储由算术单元计算的稳定转速，其中，当作为旋转轴的转速的指令旋转速度为通过旋转轴的旋转输入开始加工操作，算术单元确定指令旋转速度是否包括在转速范围内，当指令旋转速度包括在转速范围内时读出稳定的转速并将稳定的转速输出到NC装置而不是指令转速，并以稳定的转速开始加工。

64. 发明申请

US20110135415A1 VIBRATION SUPPRESSING DEVICE 审中-公开
标题翻译：振动抑制装置
公开(公告)号：US20110135415A1
公开(公告)日：2011-06-09
申请号：US12873856
申请日：2010-09-01
申请人： Akihide Hamaguchi , Hiroshi Inagaki , Kiyoshi Yoshino , Tomoharu Ando , Hiroshi Ueno
发明人： Akihide Hamaguchi , Hiroshi Inagaki , Kiyoshi Yoshino , Tomoharu Ando , Hiroshi Ueno
IPC分类号： B23Q15/12
CPC分类号： B23Q11/0032 , B23Q11/0039 , Y10T409/30084
摘要： In a vibration suppressing device provided in a machine tool having a rotary shaft for use in rotating a tool or a workpiece, for suppressing chatter vibrations generated during rotation of the rotary shaft, an arithmetical unit performs an analysis on a vibration of the rotary shaft detected by a detector (vibrations sensors) whenever the vibration is detected and a computation based on a result of the analysis. An operator, while checking results of the analysis and/or the computation displayed in real time in a display unit, manipulates a manipulation element to enter a command to change a rotation speed of the rotary shaft into a rotation speed control unit (NC unit) which controls the rotation speed according to the command entered by the operator through the manipulation element.
摘要翻译：在设置在具有用于旋转工具或工件的旋转轴的机床中的振动抑制装置中，为了抑制在旋转轴旋转期间产生的颤动振动，算术单元对所检测到的旋转轴的振动进行分析每当检测到振动时，通过检测器（振动传感器）和基于分析结果的计算。操作员在检查显示单元中实时显示的分析结果和/或计算结果的同时，操作操作元件以输入将旋转轴的转速改变为转速控制单元（NC单元）的命令，其根据操作者通过操作元件输入的命令控制转速。

65. 发明授权

US07713391B2 Method and apparatus for diagnosing an abnormality of a gas-concentration measuring apparatus 有权
标题翻译：用于诊断气体浓度测量装置的异常的方法和装置
公开(公告)号：US07713391B2
公开(公告)日：2010-05-11
申请号：US11316809
申请日：2005-12-27
申请人： Yoshinori Inoue , Hiroshi Inagaki , Norikazu Ieda
发明人： Yoshinori Inoue , Hiroshi Inagaki , Norikazu Ieda
IPC分类号： G01N27/41
CPC分类号： G01N27/4175 , F02D41/1456 , F02D41/1494 , F02D41/1495 , F02D2041/1409
摘要： In an activation state of a sensor device, when voltage on the connection points between the sensor device and the sensor control circuit becomes a preset abnormal value, electric cut off is made between the sensor control circuit and the connection point. Then, the delivery of power to the heater is ceased to lower the temperature of the cells to a below of an activation temperature, thereby increasing the internal resistance of the cell. Thereafter, the sensor control circuit supplies to the sensor device a current in a degree not to damage the sensor device, to detect voltages on the connection points at that time. By comparing between the voltages on the respective connection points detected, a content and location of abnormality occurred is identified for the sensor device.
摘要翻译：在传感器装置的激活状态下，当传感器装置和传感器控制电路之间的连接点上的电压变为预设的异常值时，在传感器控制电路和连接点之间进行电切断。然后停止向加热器的供电，将电池的温度降低到活化温度以下，从而提高电池的内阻。此后，传感器控制电路以不损坏传感器装置的程度向传感器装置供给电流，以检测此时的连接点的电压。通过比较检测到的各连接点上的电压，识别发生异常的内容和位置。

66. 发明申请

US20090095052A1 SENSOR CONTROL DEVICE AND AIR FUEL RATIO DETECTING APPARATUS 有权
标题翻译：传感器控制装置和空气燃料比检测装置
公开(公告)号：US20090095052A1
公开(公告)日：2009-04-16
申请号：US11870867
申请日：2007-10-11
申请人： Yoshinori INOUE , Hiroshi Inagaki , Norikazu Ieda , Keigo Banno
发明人： Yoshinori INOUE , Hiroshi Inagaki , Norikazu Ieda , Keigo Banno
IPC分类号： G01M15/10
CPC分类号： F02D41/1454 , F02D41/1456 , F02D41/28
摘要： A gas sensor apparatus 3 in an air-fuel ratio detection system 1 includes a gas sensor element 4 which outputs a detection signal corresponding to air-fuel ratio, and a gas sensor control circuit 2 which includes a detection section 20 for outputting a first output signal VIP1, a second output signal VIP2, and a third output signal VIP3 in accordance with the detection signal. This detection section 20 outputs the first output signal VIP1 which changes in accordance with the air-fuel ratio at least within a wide first air-fuel ratio zone, the second output signal VIP2 which changes in accordance with the air-fuel ratio within a narrow zone in the vicinity of the stoichiometric ratio, and the third output signal VIP3 which changes in accordance with the air-fuel ratio within a narrow zone in the lean region.
摘要翻译：空燃比检测系统1中的气体传感器装置3包括输出对应于空燃比的检测信号的气体传感器元件4和气体传感器控制电路2，该气体传感器控制电路2包括：检测部20，其输出第一输出信号VIP1，第二输出信号VIP2，以及根据检测信号的第三输出信号VIP3。该检测部20至少在宽的第一空燃比区域内输出根据空燃比而变化的第一输出信号VIP1，第二输出信号VIP2根据空燃比而变化，在第三输出信号VIP3中，第三输出信号VIP3根据稀薄区域内的窄带内的空燃比而变化。

67. 发明申请

US20080311021A1 Apparatus for pulling single crystal by CZ method 审中-公开
公开(公告)号：US20080311021A1
公开(公告)日：2008-12-18
申请号：US11981477
申请日：2007-10-31
申请人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
发明人： Hiroshi Inagaki , Shigeki Kawashima , Makoto Kamogawa , Toshirou Kotooka , Toshiaki Saishoji , Daisuke Ebi , Kentaro Nakamura , Kengo Hayashi , Yoshinobu Hiraishi , Shigeo Morimoto , Hiroshi Monden , Tadayuki Hanamoto , Tadashi Hata
IPC分类号： C30B15/20 , C01B33/02
CPC分类号： C30B15/206 , C30B15/14 , C30B15/30 , C30B29/06 , Y10S117/911 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

68. 发明申请

US20080196489A1 DIAGNOSTIC METHOD AND CONTROL APPARATUS FOR GAS SENSOR 有权
标题翻译：气体传感器诊断方法及控制装置
公开(公告)号：US20080196489A1
公开(公告)日：2008-08-21
申请号：US12033614
申请日：2008-02-19
申请人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
发明人： Reina Fukagai , Norikazu Ieda , Masahiro Tanaka , Hiroshi Inagaki , Masaki Hirata , Takahiro Suzuki
IPC分类号： G01M15/04
CPC分类号： F02D41/1454 , F02D41/123 , F02D41/1495 , G01N27/4175
摘要： A gas sensor diagnostic method (or apparatus) is arranged to periodically obtain sensor output values of a gas sensor such as an oxygen sensor for an internal combustion engine, and to determine local extreme values from the sensor output values obtained during a period of interruption of fuel supply to the engine. Moreover, the local extreme values are compared with a first predetermined threshold level. When the number of the local extreme values reaches a predetermined first number, a diagnosis is performed to determine whether the gas sensor is in an improper condition or not, in accordance with results of the comparison of the local extreme values with the first threshold level.
摘要翻译：气体传感器诊断方法（或装置）被布置成周期性地获得诸如用于内燃机的氧传感器的气体传感器的传感器输出值，并且从在中断期间获得的传感器输出值确定局部极值向发动机供油。此外，将局部极值与第一预定阈值水平进行比较。当本地极值的数量达到预定的第一数量时，根据局部极值与第一阈值水平的比较结果，执行诊断以确定气体传感器是否处于不正确的状态。

69. 发明授权

US07329317B2 Method for producing silicon wafer 有权
标题翻译：硅晶片的制造方法
公开(公告)号：US07329317B2
公开(公告)日：2008-02-12
申请号：US10533147
申请日：2003-10-31
申请人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
发明人： Susumu Maeda , Hiroshi Inagaki , Shigeki Kawashima , Shoei Kurosaka , Kozo Nakamura
IPC分类号： C30B15/00 , C30B21/06 , C30B23/00 , C30B30/04 , C30B27/02
CPC分类号： C30B29/06 , C30B15/203
摘要： The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1×1018 atoms/cm3 and the growth condition V/G falls within the epitaxial defect-free region α2 whose lower limit line LN1 is the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region β1, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.
摘要翻译：本发明是为了制造硅晶体，其中硅晶体中的硼浓度和生长条件V / G被控制，使得硅晶体中的硼浓度不低于1×10 18原子/ cm 3，并且生长条件V / G落在外延缺陷区域α2N中，其下限线LN 1是表示生长速率V逐渐下降的线随着硼浓度的增加。还生产硅晶片，其中硅晶体中的硼浓度和生长条件V / G被控制为至少包括外延缺陷区β1，并且热处理条件和控制硅晶体的氧浓度使得OSF核不生长到OSF。

70. 发明申请

US20070046419A1 Temperature sensor control apparatus 有权
标题翻译：温度传感器控制装置
公开(公告)号：US20070046419A1
公开(公告)日：2007-03-01
申请号：US11509566
申请日：2006-08-25
申请人： Hiroshi Inagaki , Yuji Oi
发明人： Hiroshi Inagaki , Yuji Oi
IPC分类号： H01C7/00 , H05B3/02
CPC分类号： G01K7/24 , G01K2205/04
摘要： A temperature sensor control apparatus includes a reference potential section, a driving potential section set to a driving electric potential, a temperature sensor configured to vary a resistance in accordance with a temperature, and disposed between the reference potential section and the driving potential section, a conduction path, two reference resistance elements each connected in series with the temperature sensor, a potential controlled point disposed in the conduction path between the reference resistance elements, a potential setting section configured to set an electric potential of the potential controlled point to the driving electric potential; and a resistance switching control section configured to control the potential setting section to switch the electric potential of the potential controlled point, and to switch each of the reference resistance elements to one of an energized state and a deenergized state.
摘要翻译：温度传感器控制装置包括参考电位部分，设置为驱动电位的驱动电位部分，配置为根据温度改变电阻并设置在参考电位部分和驱动电位部分之间的温度传感器，导通路径，与温度传感器串联连接的两个参考电阻元件，设置在参考电阻元件之间的导通路径中的电位受控点，被配置为将电势受控点的电势设定为驱动电潜在; 以及电阻切换控制部，被配置为控制所述电位设定部切换所述电位受控点的电位，并将所述基准电阻元件切换为通电状态和断电状态。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式