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61. 发明授权

US06436226B1 Object separating apparatus and method, and method of manufacturing semiconductor substrate 有权
标题翻译：物体分离装置和方法以及制造半导体衬底的方法
公开(公告)号：US06436226B1
公开(公告)日：2002-08-20
申请号：US09211876
申请日：1998-12-15
申请人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： B32B3500
CPC分类号： H01L21/6835 , B26F3/004 , H01L21/67092 , H01L2924/30105 , Y10S156/941 , Y10T29/49821 , Y10T83/364 , Y10T156/11 , Y10T156/1126 , Y10T156/1374 , Y10T156/19
摘要： An apparatus for separating a substrate having a porous layer at the porous layer is provided. A bonded substrate stack (101) having a porous layer (101b) is supported by substrate holding portions (108, 109) while being rotated. High-speed, high-pressure water (jet) is ejected from a nozzle (112) and injected against the bonded substrate stack (101), thereby physically separating the bonded substrate stack (101) into two substrates. The jet pressure is appropriately changed in accordance with progress of separation processing.
摘要翻译：提供了一种用于在多孔层处分离具有多孔层的基板的装置。具有多孔层（101b）的键合衬底叠层（101）在旋转的同时由衬底保持部（108,109）支撑。从喷嘴（112）喷出高速，高压水（射流）并喷射到键合衬底叠层（101）上，从而将键合衬底叠层（101）物理分离成两个衬底。喷射压力根据分离处理的进行适当地改变。

62. 发明授权

US06427747B1 Apparatus and method of separating sample and substrate fabrication method 失效
标题翻译：分离样品和底物制备方法的装置和方法
公开(公告)号：US06427747B1
公开(公告)日：2002-08-06
申请号：US09096285
申请日：1998-06-11
申请人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Kazuaki Omi , Takao Yonehara , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： H01L2100
CPC分类号： H01L21/67092 , Y10S134/902 , Y10T156/1939
摘要： An apparatus for separating a substrate having a porous layer from the porous layer is provided. A bonded substrate stack having a porous layer is supported by substrate holders while being rotated. A jet nozzle ejects a high-speed, high-pressure liquid or water. The jet thrusts into the bonded substrate through a guide unit. The position in the x-axis direction of this guide unit is adjusted by a motor such that the jet is concentrated into the bonding interface of the bonded substrate stack.
摘要翻译：提供了一种用于从多孔层分离具有多孔层的基板的装置。具有多孔层的键合衬底叠层在旋转的同时由衬底保持器支承。喷嘴喷出高速高压液体或水。射流通过引导单元推入粘合基片。该引导单元的x轴方向的位置由马达进行调节，使得射流集中到键合衬底叠层的接合界面。

63. 发明授权

US06391743B1 Method and apparatus for producing photoelectric conversion device 失效
标题翻译：光电转换装置的制造方法及装置
公开(公告)号：US06391743B1
公开(公告)日：2002-05-21
申请号：US09401775
申请日：1999-09-22
申请人： Masaaki Iwane , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida , Kiyofumi Sakaguchi , Kazutaka Yanagita
发明人： Masaaki Iwane , Takao Yonehara , Kazuaki Ohmi , Shoji Nishida , Kiyofumi Sakaguchi , Kazutaka Yanagita
IPC分类号： H01L2130
CPC分类号： H01L31/072 , H01L21/67092 , H01L21/76254 , H01L2221/68363 , Y02E10/50
摘要： There is disclosed a method of producing a photoelectric conversion device comprising the steps of forming a semiconductor substrate comprising a first and a second semiconductor layers with a separation layer therebetween; bonding a support substrate to a surface of the second semiconductor layer opposite to the separation-layer-side surface to form a bonded substrate; separating the first and the second semiconductor layers by the separation layer; and producing a photoelectric conversion device in the second semiconductor layer, wherein when bonding the semiconductor substrate and the support substrate to each other, at least a portion is formed in the bonded substrate in which at least a part of end portions of the semiconductor substrate and the support substrate is not bonded to the other substrate and a fluid is jetted against a side surface of the bonded substrate, thereby separating the first and the second semiconductor layers. The method makes it possible to separate a bonded substrate with a high yield, thereby supplying photoelectric conversion devices with a high quality at a low production cost.
摘要翻译：公开了一种制造光电转换装置的方法，包括以下步骤：形成包括第一和第二半导体层的半导体衬底，其间具有分离层; 将支撑基板接合到与分离层侧表面相对的第二半导体层的表面，以形成键合衬底; 通过分离层分离第一和第二半导体层; 以及在所述第二半导体层中制造光电转换器件，其中当将所述半导体衬底和所述支撑衬底彼此接合时，至少一部分形成在所述键合衬底中，其中所述半导体衬底和所述支撑衬底的至少一部分端部和支撑基板不与另一个基板接合，并且流体相对于键合衬底的侧表面喷射，从而分离第一和第二半导体层。该方法可以以高产率分离粘合的基片，从而以低的生产成本提供高质量的光电转换装置。

64. 发明授权

US06309505B1 Substrate processing apparatus and method 失效
标题翻译：基板加工装置及方法
公开(公告)号：US06309505B1
公开(公告)日：2001-10-30
申请号：US09037479
申请日：1998-03-10
申请人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
发明人： Toru Takisawa , Takao Yonehara , Kenji Yamagata
IPC分类号： B65G4907
CPC分类号： H01L21/68728 , H01L21/67092 , Y10T29/53191 , Y10T156/1744
摘要： One wafer is placed on a wafer support table with its frontside facing upward, and the other wafer is chucked by a wafer chuck portion with its frontside facing upward. The wafer chuck portion is pivoted about a shaft through about 180° to make the two wafers face each other substantially parallel. In response to the cancel of the chucking of the upper wafer by the wafer chuck portion, the central portion of the upper wafer is pressed by a press pin to superimpose the two wafers.
摘要翻译：将一个晶片放置在晶片支撑台上，其前侧面向上，另一个晶片被其前侧朝上的晶片卡盘部分卡住。晶片卡盘部分围绕轴枢转大约180°以使两个晶片彼此面对大致平行。响应于通过晶片卡盘部分取消上晶片的夹持，上晶片的中心部分被压针按压以叠加两个晶片。

65. 发明授权

US06306729B1 Semiconductor article and method of manufacturing the same 有权
标题翻译：半导体制品及其制造方法
公开(公告)号：US06306729B1
公开(公告)日：2001-10-23
申请号：US09219748
申请日：1998-12-23
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L2176
CPC分类号： H01L21/2007 , H01L21/76259
摘要： A method of manufacturing a semiconductor article comprises forming a doped layer containing an element capable of controlling the conductivity type at least on one of the surfaces of a semiconductor substrate, modifying the surface of the doped layer into a porous state to obtain a porous layer thinner than the doped layer, forming a non-porous layer on the porous layer to prepare a first article, bonding the first article and a second article so as to produce a multilayer structure having the porous layer in the inside thereof, and separating the multilayer structure along the porous layer.
摘要翻译：一种制造半导体产品的方法包括：形成含有能够至少在半导体衬底的一个表面上控制导电类型的元件的掺杂层，将掺杂层的表面修改为多孔状态以获得多孔层更薄在所述多孔层上形成无孔层以制备第一制品，将所述第一制品和第二制品接合以产生其内部具有所述多孔层的多层结构，并且分离所述多层结构体沿多孔层。

66. 发明授权

US06294478B1 Fabrication process for a semiconductor substrate 失效
标题翻译：半导体衬底的制造工艺
公开(公告)号：US06294478B1
公开(公告)日：2001-09-25
申请号：US08807604
申请日：1997-02-27
申请人： Kiyofumi Sakaguchi , Takao Yonehara
发明人： Kiyofumi Sakaguchi , Takao Yonehara
IPC分类号： H01L2100
CPC分类号： H01L21/76259
摘要： SOI substrates are fabricated with sufficient quality and with good reproducibility. At the same time, conservation of resources and reduction of cost are realized by reuse of the wafer and the like. Carried out to achieve the above are a step of bonding a principal surface of a first substrate to a principal surface of a second substrate, the first substrate being Si substrate in which at least one layer of non-porous thin film is formed through a porous Si layer, a step of exposing the porous Si layer in a side surface of a bonding substrate comprised of the first substrate and the second substrate, a step of dividing the porous Si layer by oxidizing the bonding substrate, and a step of removing the porous Si and oxidized porous Si layer on the second substrate separated by the division of the porous Si layer.
摘要翻译：以足够的质量和良好的再现性制造SOI衬底。同时，通过重复利用晶片等来实现资源的节约和成本的降低。为了实现上述目的，将第一基板的主面与第二基板的主面接合，所述第一衬底是通过多孔Si层形成至少一层非多孔薄膜的Si衬底，在由所述第一衬底和所述第二衬底构成的接合衬底的侧表面中暴露所述多孔Si层的步骤衬底，通过氧化接合衬底来分离多孔Si层的步骤，以及除去由多孔Si层划分分离的第二衬底上的多孔Si和氧化多孔Si层的步骤。

67. 发明授权

US06254794B1 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
标题翻译：用于蚀刻多孔硅的蚀刻溶液，使用蚀刻溶液的蚀刻方法和使用蚀刻溶液制备半导体部件的方法
公开(公告)号：US06254794B1
公开(公告)日：2001-07-03
申请号：US09298054
申请日：1999-04-22
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21302
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.
摘要翻译：一种制备半导体部件的方法包括：形成具有非多孔硅单晶层和多孔硅层的衬底;将具有由绝缘材料制成的表面的另一衬底结合到所述单晶层的表面; 通过浸渍在蚀刻溶液中来除去多孔硅层。

68. 发明授权

US6121117A Process for producing semiconductor substrate by heat treating 失效
标题翻译：通过热处理制造半导体衬底的方法
公开(公告)号：US6121117A
公开(公告)日：2000-09-19
申请号：US118872
申请日：1998-07-20
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： C30B33/00 , H01L21/20 , H01L21/306 , H01L21/3105 , H01L21/324 , H01L21/762 , H01L31/18 , H01L21/30
CPC分类号： H01L21/3247 , C30B29/06 , C30B33/00 , H01L21/2022 , H01L21/30604 , H01L21/31051 , H01L21/324 , H01L21/76251 , H01L21/76256 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.
摘要翻译：一种制造半导体衬底的方法包括在还原气氛中对其中具有单晶的衬底进行热处理。

69. 发明授权

US06100166A Process for producing semiconductor article 失效
公开(公告)号：US06100166A
公开(公告)日：2000-08-08
申请号：US993034
申请日：1997-12-18
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Shoji Nishida , Kenji Yamagata
IPC分类号： B28D5/00 , G02F1/1362 , H01L21/18 , H01L21/20 , H01L21/304 , H01L21/66 , H01L31/068 , H01L31/18 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76259 , B28D5/00 , H01L21/187 , H01L21/2007 , H01L21/304 , H01L21/76254 , H01L22/00 , H01L31/068 , H01L31/1804 , H01L31/1892 , G02F1/136277 , H01L2221/68363 , H01L2221/68368 , H01L2924/0002 , Y02E10/547 , Y02P70/521
摘要： A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

70. 发明授权

US5854123A Method for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US5854123A
公开(公告)日：1998-12-29
申请号：US729722
申请日：1996-10-07
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L21/322 , H01L21/762 , H01L27/12 , H01L31/18 , H01L21/76
CPC分类号： H01L21/02032 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76251 , H01L21/76254 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.
摘要翻译：提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。此时，在多孔Si层上外延生长无孔单晶Si层。此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。随后，进行选择性蚀刻以去除多孔Si层。

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