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61. 发明授权

US07476604B1 Aggressive cleaning process for semiconductor device contact formation 有权
标题翻译：用于半导体器件接触形成的积极清洁工艺
公开(公告)号：US07476604B1
公开(公告)日：2009-01-13
申请号：US11128391
申请日：2005-05-13
申请人： Ning Cheng , Minh Van Ngo , Jinsong Yin , Paul Raymond Besser , Connie Pin-chin Wang , Russell Rosaire Austin Callahan , Jeffrey Shields , Shankar Sinha , Jeff P. Erhardt , Jeremy Chi-Hung Chou
发明人： Ning Cheng , Minh Van Ngo , Jinsong Yin , Paul Raymond Besser , Connie Pin-chin Wang , Russell Rosaire Austin Callahan , Jeffrey Shields , Shankar Sinha , Jeff P. Erhardt , Jeremy Chi-Hung Chou
IPC分类号： H01L21/44
CPC分类号： H01L21/76831 , H01L21/02063 , H01L21/28518 , H01L21/76814 , H01L21/76843 , H01L21/76855
摘要： A method of forming a contact through a material includes forming a via through a dielectric material and cleaning the via using a dilute hydrofluoric (DHF) acid solution. The method further includes depositing a barrier layer within the via and depositing metal adjacent the barrier layer.
摘要翻译：通过材料形成接触的方法包括通过电介质材料形成通孔，并使用稀氢氟酸（DHF）酸溶液清洗通孔。所述方法还包括在所述通孔内沉积阻挡层并在所述阻挡层附近沉积金属。

62. 发明申请

US20080149989A1 FLASH MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：闪存存储器件及其制造方法
公开(公告)号：US20080149989A1
公开(公告)日：2008-06-26
申请号：US11615489
申请日：2006-12-22
申请人： Ning Cheng , Fred Cheung , Ashot Melik-Martirosian , Kyunghoon Min , Michael Brennan , Hiroyuki Kinoshita
发明人： Ning Cheng , Fred Cheung , Ashot Melik-Martirosian , Kyunghoon Min , Michael Brennan , Hiroyuki Kinoshita
IPC分类号： H01L29/788 , H01L21/04 , H01L29/68 , G11C11/34
CPC分类号： H01L29/0607 , H01L27/115 , H01L27/11521 , H01L27/11568
摘要： Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.
摘要翻译：提供闪存器件及其制造方法。根据本发明的示例性实施例，一种用于制造存储器件的方法包括以下步骤：制造覆盖衬底的第一栅极堆叠和第二栅极堆叠。在第一栅极堆叠和第二栅极堆叠之间蚀刻到衬底中的沟槽，并且在沟槽内的衬底内形成第一杂质掺杂区域。至少部分地用导电材料填充沟槽。

63. 发明授权

US07339226B2 Dual-level stacked flash memory cell with a MOSFET storage transistor 有权
标题翻译：具有MOSFET存储晶体管的双电平堆叠闪存单元
公开(公告)号：US07339226B2
公开(公告)日：2008-03-04
申请号：US11154070
申请日：2005-06-16
申请人： James Pan , Ning Cheng , Christy Mein Chu Woo
发明人： James Pan , Ning Cheng , Christy Mein Chu Woo
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , G11C16/0475 , H01L29/4234 , H01L29/66825 , H01L29/7923
摘要： The present invention is a dual-level flash memory cell design that stores 3 or more bits of information per transistor. The dual-level memory cell stores two lower bits in a first level and stores an upper bit in a second level. The lower bits are programmed, erased and read by alternate modes of operation wherein active regions operate as source and drain, and then drain and source. The upper bit is programmed and erased independent of the lower bits. However, reading of the upper bit depends upon read values of the lower bits. Additional levels are employed to store more than 3 bits of information.
摘要翻译：本发明是一种双电平闪存单元设计，其存储每个晶体管3个或更多位的信息。双级存储器单元存储第一级中的两个较低位，并将高位存储在第二级。低位通过可选的工作模式进行编程，擦除和读取，其中有源区域作为源极和漏极，然后漏极和源极工作。高位被编程和擦除，独立于低位。然而，读取较高位取决于较低位的读取值。采用附加级别来存储超过3位的信息。

64. 发明申请

US20070115855A1 Route servicing device, method and system applying the device 有权
标题翻译：路由维护设备，应用设备的方法和系统
公开(公告)号：US20070115855A1
公开(公告)日：2007-05-24
申请号：US10582980
申请日：2004-06-22
申请人： Xianli Hu , Rujun Li , Ning Cheng , Haipeng Li
发明人： Xianli Hu , Rujun Li , Ning Cheng , Haipeng Li
IPC分类号： H04L12/28 , H04L12/56
CPC分类号： H04L45/04 , H04L45/00 , H04L45/02
摘要： The present invention discloses a route service device and a method and a system for realizing call route by the device, in which, route service device and soft switch control device are networked in a layered way, the soft switch control device is the node of the lowest layer, when the user route changes, the soft switch control device reports route information including user node to the father node; the route service device performs registration, and broadcasts the changed route information to the father node, each related route service device performs registration and broadcast by the same way; when calling across domains, the soft switch control device where the calling locates initiates inquiry toward the father node, and receives the returned inquiring result, therefore routing the call to the soft switch control device where the called locates. The present invention employs route service device to replace soft switch control device for performing call route function, therefore enabling the soft switch control device absorbed in providing services, and also providing a scheme of large scale networking at telecommunication level for soft switch control device.
摘要翻译：本发明公开了一种路由服务设备和方法和系统，用于通过设备实现呼叫路由，其中路由服务设备和软交换控制设备以分层方式联网，软交换控制设备为最低层，当用户路由改变时，软交换控制设备向父节点报告包括用户节点的路由信息; 路由服务设备执行注册，并将更改的路由信息广播到父节点，每个相关路由服务设备以相同的方式进行注册和广播; 当通过域呼叫时，呼叫所在的软交换控制设备向父节点发起询问，并接收返回的查询结果，从而将呼叫路由到被叫所在的软交换控制设备。本发明采用路由业务装置来代替软交换控制装置，用于执行呼叫路由功能，从而使得软交换控制装置能够吸收提供业务，并为软交换控制装置提供电信级大规模组网方案。

65. 发明授权

US07157335B1 Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices 有权
标题翻译：单独使用BPTEOS ILD或BPTEOS ILD的薄的未掺杂TEOS来改善多位存储器件中的电荷损耗和接触电阻
公开(公告)号：US07157335B1
公开(公告)日：2007-01-02
申请号：US10917562
申请日：2004-08-13
申请人： Ning Cheng , Minh Van Ngo , Hirokazu Tokuno , Lu You , Angela T. Hui , Yi He , Brian Mooney , Jean Yei-Mei Yang , Mark T. Ramsbey
发明人： Ning Cheng , Minh Van Ngo , Hirokazu Tokuno , Lu You , Angela T. Hui , Yi He , Brian Mooney , Jean Yei-Mei Yang , Mark T. Ramsbey
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11568
摘要： The present invention facilitates dual bit memory devices and operation of dual bit memory device by providing systems and methods that employ a relatively thin undoped TEOS liner during fabrication, instead of a relatively thick TEOS layer that is conventionally used. Employment of the relatively thin liner facilitates dual bit memory device operation by mitigating charge loss and contact resistance while providing protection against unwanted dopant diffusion. The present invention includes utilizing a relatively thin undoped TEOS liner that is formed on wordlines and portions of a charge trapping dielectric layer. The relatively thin undoped TEOS liner is formed with a thickness of less than about 400 Angstroms so that contact resistance and charge loss are improved and yet providing suitable protection for operation of the device. Additionally, the present invention includes foregoing with an undoped TEOS liner altogether.
摘要翻译：本发明通过提供在制造期间使用相对薄的未掺杂TEOS衬垫的系统和方法而不是通常使用的相对较厚的TEOS层来便于双位存储器件和双位存储器件的操作。使用相对薄的衬垫通过减轻电荷损失和接触电阻而提供双位存储器件操作，同时提供防止不期望的掺杂剂扩散的保护。本发明包括利用形成在字线和电荷捕获电介质层的部分上的相对薄的未掺杂的TEOS衬垫。相对薄的未掺杂的TEOS衬垫形成有小于约400埃的厚度，使得接触电阻和电荷损失得到改善，并且为器件的操作提供适当的保护。此外，本发明包括前述的未掺杂的TEOS衬垫。

66. 发明授权

US07018896B2 UV-blocking layer for reducing UV-induced charging of SONOS dual-bit flash memory devices in BEOL processing 有权
标题翻译：紫外线阻挡层，用于在BEOL处理中减少SONOS双位闪存器件的紫外线充电
公开(公告)号：US07018896B2
公开(公告)日：2006-03-28
申请号：US10818112
申请日：2004-04-05
申请人： Minh V. Ngo , Tazrien Kamal , Mark T. Ramsbey , Arvind Halliyal , Jaeyong Park , Ning Cheng , Jeff P. Erhardt , Clarence B. Ferguson , Jeffrey A. Shields , Angela T. Hui , Robert A. Huertas , Tyagamohan Gottipati
发明人： Minh V. Ngo , Tazrien Kamal , Mark T. Ramsbey , Arvind Halliyal , Jaeyong Park , Ning Cheng , Jeff P. Erhardt , Clarence B. Ferguson , Jeffrey A. Shields , Angela T. Hui , Robert A. Huertas , Tyagamohan Gottipati
IPC分类号： H01L21/00
CPC分类号： H01L29/66833 , H01L21/28282 , H01L23/552 , H01L27/115 , H01L29/792 , H01L29/7923 , H01L2924/0002 , Y10S438/954 , H01L2924/00
摘要： A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. In one embodiment, the device includes a substantially UV-opaque sub-layer of a contact cap layer or a substantially UV-opaque contact cap layer.
摘要翻译：一种保护SONOS闪速存储器单元免受UV感应充电的方法，包括在半导体器件中制造SONOS闪存单元; 并且在所述SONOS闪存单元上沉积至少一个UV保护层，所述UV保护层包括基本上不透紫外线的材料。在一个实施例中，该装置包括接触帽层或基本上不透紫外线的接触覆盖层的基本不透紫外不透明的子层。

67. 发明授权

US08995836B2 Passive optical network with adaptive filters for upstream transmission management 有权
标题翻译：具有自适应滤波器的无源光网络用于上行传输管理
公开(公告)号：US08995836B2
公开(公告)日：2015-03-31
申请号：US13179942
申请日：2011-07-11
申请人： Ning Cheng , Frank J. Effenberger , Guo Wei
发明人： Ning Cheng , Frank J. Effenberger , Guo Wei
IPC分类号： H04J14/00 , H04B10/06 , H04J14/02
CPC分类号： H04J14/0282
摘要： A wavelength division multiplexing passive optical network (WPON) comprising an optical line terminal (OLT) and a plurality of optical network units (ONUs) coupled to the OLT via a power optical splitter. The OLT is configured to monitor wavelengths in use by the ONUs and to divide upstream traffic from the ONUs into multiple channels using tunable filters. Also disclosed is an OLT for a PON, the OLT comprising a plurality of receivers and a plurality of tunable filters corresponding to each of the receivers. The OLT also comprises channel control logic coupled to the tunable filters, wherein the channel control logic is configured to detect a plurality of wavelengths in use for upstream traffic in the PON and to divide the upstream traffic into multiple channels using the tunable filters. Included is a method for managing upstream traffic in a PON, the method comprising monitoring, by a processor, wavelengths in use for upstream traffic in the PON. The method also comprises dividing the upstream traffic into multiple channels using tunable filters.
摘要翻译：一种波分复用无源光网络（WPON），包括通过功率分光器耦合到OLT的光线路终端（OLT）和多个光网络单元（ONU）。 OLT配置为监视ONU使用的波长，并使用可调滤波器将上行业务从ONU划分为多个通道。还公开了一种用于PON的OLT，OLT包括多个接收机和与每个接收机对应的多个可调滤波器。 OLT还包括耦合到可调谐滤波器的信道控制逻辑，其中信道控制逻辑被配置为检测用于PON中的上行业务的多个波长，并且使用可调滤波器将上行业务划分成多个信道。包括用于管理PON中的上行业务的方法，该方法包括由处理器监视用于PON中的上行业务的波长。该方法还包括使用可调滤波器将上游业务划分成多个信道。

68. 发明授权

US08735960B2 High ultraviolet light absorbance silicon oxynitride film for improved flash memory device performance 有权
标题翻译：高紫外光吸收氧氮化硅薄膜，用于改善闪存器件性能
公开(公告)号：US08735960B2
公开(公告)日：2014-05-27
申请号：US12313134
申请日：2008-11-17
申请人： Minh Q. Tran , Minh-Van Ngo , Alexander H. Nickel , Sung Jin Kim , Simon Chan , Ning Cheng
发明人： Minh Q. Tran , Minh-Van Ngo , Alexander H. Nickel , Sung Jin Kim , Simon Chan , Ning Cheng
IPC分类号： H01L29/788
CPC分类号： H01L29/7881 , H01L23/485 , H01L29/66825 , H01L2924/0002 , H01L2924/00
摘要： An ultraviolet light absorbent silicon oxynitride layer overlies a memory cell including a pair of source/drains, a gate insulator, a floating gate, a dielectric layer, and a control gate. A conductor is disposed through the silicon oxynitride layer for electrical connection to the control gate, and another conductor is disposed through the silicon oxynitride layer for electrical connection to a source/drain.
摘要翻译：紫外线吸收剂氮氧化硅层覆盖包括一对源极/漏极，栅极绝缘体，浮动栅极，电介质层和控制栅极的存储单元。导电体通过硅氧氮化物层设置，用于与控制栅极电连接，并且另一个导体通过氧氮化硅层设置，用于电连接到源极/漏极。

69. 发明授权

US08486782B2 Flash memory devices and methods for fabricating the same 有权
标题翻译：闪存器件及其制造方法
公开(公告)号：US08486782B2
公开(公告)日：2013-07-16
申请号：US11615489
申请日：2006-12-22
申请人： Ning Cheng , Fred Cheung , Ashot Melik-Martirosian , Kyunghoon Min , Michael Brennan , Hiroyuki Kinoshita
发明人： Ning Cheng , Fred Cheung , Ashot Melik-Martirosian , Kyunghoon Min , Michael Brennan , Hiroyuki Kinoshita
IPC分类号： H01L21/336
CPC分类号： H01L29/0607 , H01L27/115 , H01L27/11521 , H01L27/11568
摘要： Flash memory devices and methods for fabricating the same are provided. In accordance with an exemplary embodiment of the invention, a method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a substrate. A trench is etched into the substrate between the first gate stack and the second gate stack and a first impurity doped region is formed within the substrate underlying the trench. The trench is filled at least partially with a conductive material.
摘要翻译：提供闪存器件及其制造方法。根据本发明的示例性实施例，一种用于制造存储器件的方法包括以下步骤：制造覆盖衬底的第一栅极堆叠和第二栅极堆叠。在第一栅极堆叠和第二栅极堆叠之间蚀刻到衬底中的沟槽，并且在沟槽内的衬底内形成第一杂质掺杂区域。至少部分地用导电材料填充沟槽。

70. 发明授权

US07899043B2 Route servicing device, method and system applying the device 有权
标题翻译：路由维护设备，应用设备的方法和系统
公开(公告)号：US07899043B2
公开(公告)日：2011-03-01
申请号：US10582980
申请日：2004-06-22
申请人： Xianli Hu , Rujun Li , Ning Cheng , Haipeng Li
发明人： Xianli Hu , Rujun Li , Ning Cheng , Haipeng Li
IPC分类号： H04L12/28
CPC分类号： H04L45/04 , H04L45/00 , H04L45/02
摘要： The present invention discloses a route service device and a method and a system for realizing call route by the device, in which, route service device and soft switch control device are networked in a layered way, the soft switch control device is the node of the lowest layer, when the user route changes, the soft switch control device reports route information including user node to the father node; the route service device performs registration, and broadcasts the changed route information to the father node, each related route service device performs registration and broadcast by the same way; when calling across domains, the soft switch control device where the calling locates initiates inquiry toward the father node, and receives the returned inquiring result, therefore routing the call to the soft switch control device where the called locates. The present invention employs route service device to replace soft switch control device for performing call route function, therefore enabling the soft switch control device absorbed in providing services, and also providing a scheme of large scale networking at telecommunication level for soft switch control device.
摘要翻译：本发明公开了一种路由服务设备和方法和系统，用于通过设备实现呼叫路由，其中路由服务设备和软交换控制设备以分层方式联网，软交换控制设备为最低层，当用户路由改变时，软交换控制设备向父节点报告包括用户节点的路由信息; 路由服务设备执行注册，并将更改的路由信息广播到父节点，每个相关路由服务设备以相同的方式进行注册和广播; 当通过域呼叫时，呼叫所在的软交换控制设备向父节点发起询问，并接收返回的查询结果，从而将呼叫路由到被叫所在的软交换控制设备。本发明采用路由业务装置来代替软交换控制装置，用于执行呼叫路由功能，从而使得软交换控制装置能够吸收提供业务，并为软交换控制装置提供电信级大规模组网方案。

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