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61. 发明授权

US07977675B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07977675B2
公开(公告)日：2011-07-12
申请号：US12423053
申请日：2009-04-14
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Hiroyuki Uchiyama
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Hiroyuki Uchiyama
IPC分类号： H01L29/12
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/127 , H01L29/7869
摘要： A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.
摘要翻译：具有高性能和小变化的金属氧化物半导体器件。它是一种使用金属氧化物膜作为沟道的场效应晶体管，其包括沟道区和源极区，并且包括具有比金属氧化物中的沟道区更低的氧含量的漏区，其中沟道区表现出半导体特性和氧含量随着表面深度的减小而减小。

62. 发明授权

US07586554B2 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US07586554B2
公开(公告)日：2009-09-08
申请号：US11583882
申请日：2006-10-20
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

63. 发明授权

US07335915B2 Image displaying device and method for manufacturing same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07335915B2
公开(公告)日：2008-02-26
申请号：US11585967
申请日：2006-10-25
申请人： Yoshiaki Toyota , Mutsuko Hatano
发明人： Yoshiaki Toyota , Mutsuko Hatano
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L27/1248
摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.
摘要翻译：公开了一种提高图像显示装置的制造成品率的技术。图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域，在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源极/漏极之后限定通孔，并且去除岛状半导体层和栅电极的接触部分。

64. 发明申请

US20070155070A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070155070A1
公开(公告)日：2007-07-05
申请号：US11620154
申请日：2007-01-05
申请人： Kiyoshi OUCHI , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
发明人： Kiyoshi OUCHI , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
IPC分类号： H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.
摘要翻译：一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。当制造TFT时，该低电阻半导体层用于形成源极和漏极。由于C，N和O杂质降低了TFT的迁移率，所以使用多晶硅，其中污染物浓度满足以下条件：碳浓度<= 3×10 9 / >，氮浓度<= 5×10 17 cm -3，氧浓度<= 3×10 9 cm -3 -3 / 。

65. 发明申请

US20070096209A1 Image displaying device and method for manufacturing same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20070096209A1
公开(公告)日：2007-05-03
申请号：US11585967
申请日：2006-10-25
申请人： Yoshiaki Toyota , Mutsuko Hatano
发明人： Yoshiaki Toyota , Mutsuko Hatano
IPC分类号： H01L27/12 , H01L27/01 , H01L21/84 , H01L21/00 , H01L31/0392
CPC分类号： H01L27/12 , H01L27/1248
摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.
摘要翻译：公开了一种提高图像显示装置的制造成品率的技术。图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域，在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源/漏电极之后限定出一个或多个通孔，岛状半导体层和栅电极的接触部分。

66. 发明授权

US07193693B2 Apparatus for manufacturing flat panel display devices 有权
标题翻译：用于制造平板显示装置的装置
公开(公告)号：US07193693B2
公开(公告)日：2007-03-20
申请号：US10991482
申请日：2004-11-19
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Takeshi Noda
IPC分类号： G01N21/00 , G01J1/00 , B23K26/06
CPC分类号： B23K26/073 , B23K26/702 , H01L27/14625
摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.
摘要翻译：提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号。入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件，基于信号处理的结果。以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

67. 发明授权

US07183148B2 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US07183148B2
公开(公告)日：2007-02-27
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

68. 发明申请

US20060029426A1 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US20060029426A1
公开(公告)日：2006-02-09
申请号：US11246225
申请日：2005-10-11
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G03G15/00 , G03G15/22
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
摘要翻译：激光束被选择性地引导到显示装置的有源矩阵基板上的像素部分的非晶硅膜，以将非晶硅膜修改为多晶硅膜。像素电路如薄膜晶体管形成在改性多晶硅膜上。因此，可以显着地实现具有高性能薄膜晶体管电路的有源矩阵基板的显示装置。

69. 发明申请

US20050070035A1 Display panel and method for manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20050070035A1
公开(公告)日：2005-03-31
申请号：US10914333
申请日：2004-08-10
申请人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
发明人： Akio Yazaki , Mikio Hongo , Mutsuko Hatano , Hiroshi Saito , Makoto Ohkura
IPC分类号： G02F1/1368 , B23K26/06 , B23K26/073 , G09F9/30 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/064 , B23K26/0648 , B23K26/0652 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1229 , H01L27/1285 , H01L27/1296 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： An amorphous silicon film on an insulating substrate portion to be formed as an individual display panel in a large-sized insulating substrate is irradiated with a continuous-wave (CW) solid-state laser beam condensed linearly, while being scanned therewith at a fixed speed in the width direction of the condensed laser beam. A pixel portion and a peripheral circuit portion in the same insulating substrate portion are irradiated with the laser beam temporally modulated to have a power density high enough to provide predetermined crystallinity. The amorphous silicon film is transformed into a silicon film having crystallinity corresponding to performance required for thin film transistors to be built in each of the pixel portion and the peripheral circuit portion. In such a manner, a thin film transistor circuit having optimum crystallinity required in the pixel or peripheral circuit portion can be obtained while high throughput is kept. Thus, a product having good display features as a display panel can be provided inexpensively.
摘要翻译：在大尺寸绝缘基板上作为单独显示面板形成的绝缘基板部分上的非晶硅膜用线性冷却的连续波（CW）固态激光束照射，同时以固定速度扫描在聚光激光束的宽度方向上。在同一绝缘基板部分中的像素部分和外围电路部分被照射到时间调制的激光束以具有足够高的功率密度以提供预定的结晶度。将非晶硅膜转变成具有对应于要构建在每个像素部分和外围电路部分中的薄膜晶体管所需的性能的结晶度的硅膜。以这种方式，可以获得在像素或外围电路部分所需的最佳结晶度的薄膜晶体管电路，同时保持高通量。因此，可以廉价地提供具有作为显示面板的良好显示特征的产品。

70. 发明授权

US06635932B2 Thin film crystal growth by laser annealing 失效
公开(公告)号：US06635932B2
公开(公告)日：2003-10-21
申请号：US10213698
申请日：2002-08-06
申请人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
发明人： Costas P. Grigoropoulos , Mutsuko Hatano , Ming-Hong Lee , Seung-Jae Moon
IPC分类号： H01L2362
CPC分类号： H01L21/02686 , H01L21/2026
摘要： A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature. However, the central part of the liquid pool subjected to continued heating by the first laser beam cools down slowly. Grains nucleated in the periphery of the fully molten spot can therefore grow into the liquid-Si and extend in length until they collide at the center of the first laser beam spot. The first laser beam prolongs the molten Si phase and induces grain growth in a certain direction. The second laser beam triggers nucleation and controls grain location leading to subsequent lateral grain growth.

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