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61. 发明授权

US07332366B2 Light-emitting semiconductor device using group III nitrogen compound 失效
公开(公告)号：US07332366B2
公开(公告)日：2008-02-19
申请号：US11328079
申请日：2006-01-10
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L29/40
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

62. 发明申请

US20070278532A1 Field-Effect Transistor, Semiconductor Device, a Method for Manufacturing Them, and a Method of Semiconductor Crystal Growth 有权
标题翻译：场效应晶体管，半导体器件，其制造方法以及半导体晶体生长的方法
公开(公告)号：US20070278532A1
公开(公告)日：2007-12-06
申请号：US11578965
申请日：2005-06-09
申请人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
发明人： Masayoshi Kosaki , Koji Hirata , Masanobu Senda , Naoki Shibata
IPC分类号： H01L29/778 , H01L21/335 , H01L21/338 , H01L29/812 , H01L21/36
CPC分类号： H01L29/66462 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003
摘要： A field-effect transistor which comprises a buffer layer and a barrier layer each of which is made of a Group III nitride compound semiconductor and has a channel at the interface inside of the buffer layer to the barrier layer, wherein the barrier layer has multiple-layer structure comprising an abruct interface providing layer which composes the lowest semiconductor layer in said barrier layer and whose composition varies rapidly at the interface of said buffer layer, and an electrode connection plane providing layer which constructs the uppermost semiconductor layer and whose upper surface is formed flat.
摘要翻译：一种场效应晶体管，其包括缓冲层和阻挡层，每个所述阻挡层由III族氮化物化合物半导体制成，并且在所述缓冲层的内部与所述阻挡层的界面处具有通道，其中所述阻挡层具有多层结构，层结构包括构成所述阻挡层中的最低半导体层并且其组成在所述缓冲层的界面处快速变化的抗蚀剂界面提供层和构成最上半导体层并且其上表面形成的电极连接平面提供层平面。

63. 发明授权

US07190076B2 Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same 有权
标题翻译： p型III族氮化物半导体层用电极及其制造方法
公开(公告)号：US07190076B2
公开(公告)日：2007-03-13
申请号：US10695453
申请日：2003-10-29
申请人： Ippei Fujimoto , Tsutomu Sekine , Miki Moriyama , Masanori Murakami , Naoki Shibata
发明人： Ippei Fujimoto , Tsutomu Sekine , Miki Moriyama , Masanori Murakami , Naoki Shibata
IPC分类号： H01L23/48 , H01L29/40 , H01L29/20 , H01L33/00 , H01L29/02
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L33/32 , H01L33/40
摘要： A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN substrate is heated to a temperature of 300° C. or by (2) vapor deposition while the GaN substrate is left at room temperature. (3) The electrode obtained in (2) is heated to 300° C. in a nitrogen atmosphere. The contact resistance of the electrode obtained in (1) is lower by two or three digits than that of the electrode obtained in (2) or (3). That is, the electric characteristic of the electrode obtained in (1) is improved greatly.
摘要翻译：通过AlN缓冲层在蓝宝石衬底上形成GaN层，并掺杂Mg以制备层压体（称为“GaN衬底”）。通过（1）在GaN衬底被加热到300℃之后或通过（2）气相沉积在GaN衬底留下时，通过（1）气相沉积在GaN衬底上形成50nm厚的金属（Pt和Ni）电极在室温下。（3）将（2）得到的电极在氮气氛中加热至300℃。（1）中获得的电极的接触电阻比在（2）或（3）中获得的电极的接触电阻低两位或三位数。也就是说，（1）中得到的电极的电特性大大提高。

64. 发明授权

US07138286B2 Light-emitting semiconductor device using group III nitrogen compound 有权
公开(公告)号：US07138286B2
公开(公告)日：2006-11-21
申请号：US11143664
申请日：2005-06-03
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

65. 发明申请

US20060118821A1 Light-emitting semiconductor device using group III nitrogen compound 失效
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US20060118821A1
公开(公告)日：2006-06-08
申请号：US11328079
申请日：2006-01-10
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L31/109
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译：发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3）（n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中，具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga）在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +层（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。镍电极（7,8）分别连接到p层（6）和n + +层（4）。一个凹槽（9）使电极（7,8）电绝缘。选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

66. 发明授权

US07029939B2 P-type semiconductor manufacturing method and semiconductor device 失效
标题翻译： P型半导体制造方法和半导体装置
公开(公告)号：US07029939B2
公开(公告)日：2006-04-18
申请号：US10481057
申请日：2002-06-17
申请人： Toshiaki Chiyo , Naoki Shibata
发明人： Toshiaki Chiyo , Naoki Shibata
IPC分类号： H01L21/22 , H01L21/324
CPC分类号： H01L33/0095 , H01L21/28575 , H01L29/2003 , H01L33/14 , H01L33/32 , H01L33/42
摘要： A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is formed thereon. Then in a planar electron beam irradiation apparatus using plasma, electron beams are irradiated to the p-GaN layer 5 through the first metal layer 6. Accordingly, the first metal layer 6 prevents the surface of the p-GaN layer 5 from being damaged and resistivity of the p-GaN layer 5 can be lowered. Next, a second metal (Ni) layer 10 is formed on the first metal layer 6. And the first metal layer 6 is etched through the second metal layer 10 by using fluoric nitric acid. As a result, the first metal layer is almost completely removed. Then a light-transmitting p-electrode 7 made of Co/Au is formed thereon. As a result, a p-type semiconductor having decreased contact resistance and lower driving voltage can be obtained and optical transmittance factor of the p-type semiconductor improves.
摘要翻译：通过MOVPE处理在蓝宝石衬底1上形成包含III族氮化物化合物半导体的材料的p-GaN层5，在其上形成由Co / Au构成的第一金属层6。然后在使用等离子体的平面电子束照射装置中，电子束通过第一金属层6照射到p-GaN层5。因此，第一金属层6防止p-GaN层5的表面被损坏，并且可以降低p-GaN层5的电阻率。接着，在第一金属层6上形成第二金属（Ni）层10。并且通过使用氟酸硝酸将第一金属层6蚀刻通过第二金属层10。结果，第一金属层几乎被完全去除。然后在其上形成由Co / Au制成的透光p电极7。结果，可以获得具有降低的接触电阻和较低驱动电压的p型半导体，并且p型半导体的光透射率提高。

67. 发明申请

US20060065898A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060065898A1
公开(公告)日：2006-03-30
申请号：US11233113
申请日：2005-09-23
申请人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
发明人： Masanori Murakami , Teppei Watanabe , Susumu Tsukimoto , Kazuhiro Ito , Jun Ito , Miki Moriyama , Naoki Shibata
IPC分类号： H01L29/15
CPC分类号： H01L21/28575 , H01L21/0237 , H01L21/0242 , H01L21/02488 , H01L21/02491 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： In a semiconductor device in which a group III nitride compound semiconductor layer is formed without a low temperature grown buffer layer provided on an undercoat layer formed by a metal nitride layer, the metal nitride layer is formed of reddish brown titanium nitride. The reddish brown titanium nitride can be obtained by causing nitrogen to be rich in the titanium nitride.
摘要翻译：在其中形成III族氮化物化合物半导体层的半导体器件中，没有设置在由金属氮化物层形成的底涂层上的低温生长缓冲层，金属氮化物层由红棕色氮化钛形成。可以通过使氮富含氮化钛来获得微红棕色的氮化钛。

68. 发明申请

US20050224834A1 LIght-emitting semiconductor device using group III nitrogen compound 有权
标题翻译：使用III族氮化合物的发光半导体器件
公开(公告)号：US20050224834A1
公开(公告)日：2005-10-13
申请号：US11143664
申请日：2005-06-03
申请人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
发明人： Katsuhide Manabe , Hisaki Kato , Michinari Sassa , Shiro Yamazaki , Makoto Asai , Naoki Shibata , Masayoshi Koike
IPC分类号： H01L33/00 , H01L33/32 , H01L33/38 , H01L33/40
CPC分类号： H01L33/32 , H01L33/0025 , H01L33/007 , H01L33/325 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/40
摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.
摘要翻译：发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3）（n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中，具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga）在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。镍电极（7,8）分别连接到p层（6）和n + +层（4）。一个凹槽（9）使电极（7,8）电绝缘。选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

69. 发明授权

US06943376B2 Electrode for p-type SiC 失效
标题翻译： p型SiC电极
公开(公告)号：US06943376B2
公开(公告)日：2005-09-13
申请号：US10415914
申请日：2002-09-02
申请人： Osamu Nakatsuka , Ryohei Konishi , Ryuichi Yasukochi , Yasuo Koide , Masanori Murakami , Naoki Shibata
发明人： Osamu Nakatsuka , Ryohei Konishi , Ryuichi Yasukochi , Yasuo Koide , Masanori Murakami , Naoki Shibata
IPC分类号： C23C14/14 , H01L21/04 , H01L21/28 , H01L29/24 , H01L29/45 , H01L29/861 , H01L29/868 , H01L33/00 , C04B41/90
CPC分类号： H01L29/45 , H01L29/1608 , H01L33/34 , H01L33/40
摘要： An object of this invention is to provide an electrode for p-type SiC which can provide improved surface morphology and less thermal damage for a semiconductor crystal layer due to formation of an electrode. In this invention, a p-type electrode is manufactured to contain at least one selected from the group consisting of nickel (Ni), cobalt (Co), palladium (Pd) and platinum (Pt).
摘要翻译：本发明的目的是提供一种用于p型SiC的电极，其可以由于电极的形成而为半导体晶体层提供改善的表面形态和较少的热损伤。在本发明中，制造p型电极以含有选自镍（Ni），钴（Co），钯（Pd）和铂（Pt）中的至少一种。

70. 发明授权

US06925100B2 Communication device 有权
标题翻译：通讯设备
公开(公告)号：US06925100B2
公开(公告)日：2005-08-02
申请号：US10620572
申请日：2003-07-17
申请人： Masanobu Senda , Naoki Shibata
发明人： Masanobu Senda , Naoki Shibata
IPC分类号： G02B6/42 , H01L21/60 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/38 , H01L33/62 , H01L33/64 , H01S3/04 , H01S5/00
CPC分类号： H01L33/38 , G02B6/4204 , H01L33/387 , H01L2224/05001 , H01L2224/05023 , H01L2224/051 , H01L2224/05568 , H01L2224/056 , H01L2224/16225 , H01L2924/00014
摘要： In an LED, the area of contact between an ohmic electrode formed on a contact layer and the contact layer serves as an effective light-emitting area of a light-emitting layer. Therefore, while the area of contact between the ohmic electrode and the contact layer is kept small, a seat electrode is interposed so that the seat electrode is connected to a circuit wiring on a wiring board by a ball electrode being contact with the seat electrode at an area larger than the area. As a result, the size necessary for forming the ball electrode can be secured easily and the light-emitting area of the light-emitting layer in the LED can be reduced sufficiently. Accordingly, a capacitance component formed by clamping the light-emitting portion of the light-emitting layer can be reduced, so that a time constant at a leading edge of luminance and a time constant at a trailing edge of luminance can be reduced sufficiently to obtain a high speed.
摘要翻译：在LED中，形成在接触层上的欧姆电极与接触层之间的接触面积成为发光层的有效发光面积。因此，尽管欧姆电极和接触层之间的接触面积保持较小，但是插入座电极，使得座电极通过与座电极接触的球电极连接到布线板上的电路布线面积大于面积。结果，可以容易地确保形成球电极所需的尺寸，并且可以充分降低LED中的发光层的发光面积。因此，可以减少通过夹持发光层的发光部分而形成的电容分量，从而可以充分降低辉度前沿的时间常数和亮度后沿的时间常数，以获得高速。

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