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    • 61. 发明申请
    • Two-part curing high-durable polyurethane elastomer composition
    • 两部分固化高耐久性聚氨酯弹性体组合物
    • US20070083027A1
    • 2007-04-12
    • US10582356
    • 2004-12-10
    • Keisuke FukudaSeiji NagahisaHiroshi Yamaguchi
    • Keisuke FukudaSeiji NagahisaHiroshi Yamaguchi
    • C08G18/00
    • C08G18/66
    • A two-part curing high-durable polyurethane elastomer composition having excellent heat resistance and wet heat resistance, and excellent workability such that a viscosity after two-part mixing is suitable for casting workability which comprises (i) a polyisocyanate component, and (ii) an active hydrogen-containing compound comprising (A) a polyol having a hydroxyl value of from 25 to 55 obtained by reacting a castor oil fatty acid, 12-hydroxystearic acid, or a condensate of their fatty acids, with a polyol (X) having a molecular weight of from 400 to 1,500, and (B) a polyol having a hydroxyl value of from 100 to 500 obtained by ring opening an epoxidized fatty acid ester with a polyhydric alcohol.
    • 具有优异的耐热性和耐湿热性的双组分固化性高耐久性聚氨酯弹性体组合物和优异的加工性,使得两部分混合后的粘度适合于浇铸加工性,其包括(i)多异氰酸酯组分,和(ii) 包含(A)通过使蓖麻油脂肪酸,12-羟基硬脂酸或其脂肪酸的缩合物反应得到的羟值为25〜55的多元醇与多元醇(X)的活性氢化合物,所述多元醇 分子量为400〜1500,以及(B)通过用多元醇开环氧化脂肪酸酯而得到的羟值为100〜500的多元醇。
    • 64. 发明申请
    • Power semiconductor device
    • 功率半导体器件
    • US20060151805A1
    • 2006-07-13
    • US11194593
    • 2005-08-02
    • Kenji OotaYoshihiro YamaguchiHiroshi Yamaguchi
    • Kenji OotaYoshihiro YamaguchiHiroshi Yamaguchi
    • H01L29/45H01L29/76
    • H01L29/0661H01L29/0619H01L29/0834H01L29/74
    • A power semiconductor device comprises a semiconductor substrate, a gate electrode region (control electrode region), a cathode electrode region (first main electrode region), an anode electrode region (second main electrode region) and a guard ring. The semiconductor substrate has a side surface portion having a vertical portion formed substantially vertical to a main surface and a mesa portion connected to the vertical portion in a cross section. The gate electrode region is formed in a first main surface of the semiconductor substrate. The cathode electrode region is formed in part of a surface of the gate electrode region. The anode electrode region is formed in a second main surface of the semiconductor substrate. The guard ring is formed in the second main surface of the semiconductor substrate and annularly surrounds the anode electrode region. With this constitution provided is a power semiconductor device which makes the impurity diffusion length of the anode electrode region shallower in order to ensure reduction in recovery loss.
    • 功率半导体器件包括半导体衬底,栅电极区域(控制电极区域),阴极电极区域(第一主电极区域),阳极电极区域(第二主电极区域)和保护环。 半导体衬底具有侧表面部分,该侧表面部分具有基本上垂直于主表面的垂直部分和在横截面中连接到垂直部分的台面部分。 栅电极区域形成在半导体衬底的第一主表面中。 阴极电极区域形成在栅电极区域的一部分表面。 阳极电极区域形成在半导体衬底的第二主表面中。 保护环形成在半导体衬底的第二主表面中并且环形地围绕阳极电极区域。 通过这样构成,为了确保降低回收损失,能够使阳极电极区域的杂质扩散长度变浅的功率半导体装置。
    • 66. 发明授权
    • Image reading apparatus
    • 图像读取装置
    • US07035437B2
    • 2006-04-25
    • US10156769
    • 2002-05-29
    • Hiroshi Yamaguchi
    • Hiroshi Yamaguchi
    • G06K9/00
    • G06K9/00H04N1/00092H04N1/00795H04N1/00803H04N1/4097
    • The image reading apparatus for photoelectrically reading an original image includes an image reading device and a detection device. The image reading device has first reading unit for reading a visible image carried by the original image and a second reading unit for reading a reference image in a wavelength different from that used to read the visible image. The detection device acquires correlative pixel distribution information between a visible image signal and a reference image signal using the visible image and the reference image having been read by the image reading device and detects an image defect caused by a foreign particle deposited on the original image and a flaw of an original using the information. The apparatus can detect the image defect of the film with pinpoint accuracy without erroneous detection without depending upon a type of the film and a state of the image, and output in excellent productivity an image of high quality whose image defect has been preferably corrected.
    • 用于光电读取原始图像的图像读取装置包括图像读取装置和检测装置。 图像读取装置具有用于读取由原始图像承载的可见图像的第一读取单元和用于读取与用于读取可见图像的波长不同的波长的参考图像的第二读取单元。 检测装置利用图像读取装置读取的可见图像和参考图像,获取可见图像信号和参考图像信号之间的相关像素分布信息,并检测由沉积在原始图像上的异物引起的图像缺陷, 使用信息的原件的缺陷。 该装置可以精确地检测胶片的图像缺陷,而不会因为胶片的类型和图像的状态而错误地检测胶片的图像缺陷,并且以优异的生产率输出优化了图像缺陷的高品质的图像。
    • 67. 发明授权
    • Method for detecting similarity between standard information and input information and method for judging the input information by use of detected result of the similarity
    • 用于检测标准信息和输入信息之间的相似性的方法以及通过使用相似性的检测结果来判断输入信息的方法
    • US07006970B2
    • 2006-02-28
    • US09951211
    • 2001-09-11
    • Michihiro JinnaiHiroshi Yamaguchi
    • Michihiro JinnaiHiroshi Yamaguchi
    • G10L15/08
    • G10L15/10G06K9/6215
    • Disclosed is a method for obtaining a precise detected value of a similarity between voices or the like. Standard and input pattern matrices, each having a voice feature amount as a component, are prepared (S1 and S2). A reference shape having a variance different for each specified component of the pattern matrices is prepared, and positive and negative reference pattern vectors, each having a value of the reference shape as a component, are prepared. Then, while the specified component (a center of the reference shape) being made to move to each component position j1=1 to m1, j2=1 to m2 of the standard pattern matrix, a shape change between the standard and input pattern matrices is substituted for shape changes of the positive and negative reference pattern vectors. And, an amount of change in kurtosis of each reference pattern vector is numerically evaluated to obtain a shape change amount Dj1j2 (S3). Then, a value of a geometric distance between the pattern matrices is calculated from Dj1j2 (S4).
    • 公开了一种用于获得语音等之间的相似度的精确检测值的方法。 准备了具有语音特征量作为分量的标准和输入图形矩阵(S 1和S 2)。 准备具有对于图形矩阵的每个指定分量的方差不同的参考形状,并且准备每个具有参考形状的值作为分量的正和负参考图案向量。 然后,当指定的分量(参考形状的中心)被移动到每个分量位置j 1 1 1 -1 m 1时,j 2 < / SUB> = 1到m 2,标准图案矩阵和输入图案矩阵之间的形状变化代替正和负参考图案向量的形状变化。 并且,对每个参考图案向量的峰度的变化量进行数值估计,以获得形状变化量Dj&lt; 1&lt; 2&gt;(S 3)。 然后,从Dj&gt; 2&lt; 2&gt;(S 4)计算图案矩阵之间的几何距离的值。