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61. 发明授权

US06430999B1 Semiconductor physical quantity sensor including frame-shaped beam surrounded by groove 有权
公开(公告)号：US06430999B1
公开(公告)日：2002-08-13
申请号：US09818624
申请日：2001-03-28
申请人： Minoru Murata , Minekazu Sakai
发明人： Minoru Murata , Minekazu Sakai
IPC分类号： G01P1500
摘要： A semiconductor physical quantity sensor has a beam connecting a movable portion and a support substrate for displacing the movable portion in a displacement direction. The beam has a rectangular frame shape with a hollow portion and is surrounded by a groove. The groove has opposing intervals at both sides of the beam in the displacement direction, and the opposing intervals are equal to an interval of the hollow portion in the displacement direction. Accordingly, etching rates at the groove and the hollow portion become approximately equal to each other, reducing processing variation of the beam.

62. 发明授权

US09513245B2 Capacitive humidity sensor 有权
标题翻译：电容式湿度传感器
公开(公告)号：US09513245B2
公开(公告)日：2016-12-06
申请号：US14116149
申请日：2012-05-22
申请人： Minekazu Sakai , Naohisa Niimi
发明人： Minekazu Sakai , Naohisa Niimi
IPC分类号： G01R27/26 , G01N27/22 , G01N27/04
CPC分类号： G01N27/223 , G01N27/048 , G01N27/225 , H01L2224/48137 , H01L2224/8592
摘要： A humidity sensor includes a detection device with a capacitance changing with humidity at a first ratio and a reference device with a capacitance changing with humidity at a second ratio smaller than the first ratio. The detection device has detection electrodes facing each other with a first gap and a detection humidity-sensitive film covering the detection electrodes. The reference device has reference electrodes facing each other with a second gap and a reference humidity-sensitive film covering the reference electrodes. The detection humidity-sensitive film and the reference humidity-sensitive film are made from the same material and have the same thickness. The detection electrodes and the reference electrodes are made from the same material and have the same width and thickness. The second ratio peaks when the second gap is equal to a predetermined value. The second gap is smaller than the first gap and the predetermined value.
摘要翻译：一种湿度传感器包括具有以第一比例的湿度变化的电容的检测装置和具有以比第一比率小的第二比例的湿度变化的电容的参考装置。检测装置具有检测电极，第一间隙面对彼此，检测用湿敏膜覆盖检测电极。参考装置具有彼此面对的具有第二间隙的参考电极和覆盖参考电极的参考湿度敏感膜。检测用湿度敏感膜和基准湿度敏感膜由相同的材料制成，厚度相同。检测电极和参考电极由相同的材料制成并且具有相同的宽度和厚度。当第二间隙等于预定值时，第二比率达到峰值。第二间隙小于第一间隙和预定值。

63. 发明授权

US09239309B2 Humidity sensor and method of manufacturing the same 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US09239309B2
公开(公告)日：2016-01-19
申请号：US14115901
申请日：2012-05-30
申请人： Naohisa Niimi , Minekazu Sakai
发明人： Naohisa Niimi , Minekazu Sakai
IPC分类号： G01N27/22 , G01N27/12
CPC分类号： G01N27/223 , G01N27/121
摘要： A humidity sensor includes a humidity detention section, a pad section, and a dam section. The humidity detention section includes a pair of detection electrodes facing each other on a predetermined surface of a substrate and a humidity-sensitive film covering the detection electrodes. The pad section is spaced from the humidity detection section on the surface and covered with a protection gel section. The dam section is located between the humidity detection section and the pad section on the surface. The dam section includes a dam wire that is made from the same material as the detection electrodes and a dam humidity-sensitive film that is made from the same material as the humidity-sensitive film and covers at least part of the dam wire.
摘要翻译：湿度传感器包括湿度滞留部分，垫部分和坝部分。湿度滞留部分包括在基板的预定表面上彼此面对的一对检测电极和覆盖检测电极的湿敏膜。垫部分与表面上的湿度检测部分间隔开并用保护凝胶部分覆盖。水坝段位于湿度检测部分和表面上的垫部分之间。坝段包括由与检测电极相同的材料制成的坝线，以及由与湿敏膜相同的材料制成并覆盖至少一部分坝线的水坝湿度敏感膜。

64. 发明授权

US08225660B2 Dynamic quantity sensor and method of manufacturing the same 有权
标题翻译：动态量传感器及其制造方法
公开(公告)号：US08225660B2
公开(公告)日：2012-07-24
申请号：US12792404
申请日：2010-06-02
申请人： Minekazu Sakai , Takashi Katsumata , Yoshiaki Murakami
发明人： Minekazu Sakai , Takashi Katsumata , Yoshiaki Murakami
IPC分类号： G01P9/04 , G01P1/02 , G01C19/56
CPC分类号： G01C19/5747 , B81B2207/012 , B81C99/0045 , G01C25/00 , H01L29/84
摘要： A dynamic quantity sensor includes a sensor chip, a base member, and bumps. The sensor chip includes a semiconductor substrate, a sensor part, and sensor pads electrically coupled with the sensor part. The base member includes a base substrate and base pads disposed on the base substrate. The bumps mechanically and electrically couple the sensor pads and the base pads, respectively, in a state where the sensor chip is curved with respect to the base member. The sensor pads include input pads and output pads. The first surface of the semiconductor substrate includes a first portion and a second portion. The first portion is closer to the base substrate than the second portion is. At least one of the input pads is disposed on the first portion and at least one of the output pads is disposed on the second portion.
摘要翻译：动态量传感器包括传感器芯片，基底构件和凸块。传感器芯片包括半导体衬底，传感器部分和与传感器部件电耦合的传感器衬垫。基座构件包括基底基板和设置在基底基板上的基座垫。在传感器芯片相对于基座构件弯曲的状态下，凸块分别机械地和电耦接传感器焊盘和基座。传感器焊盘包括输入焊盘和输出焊盘。半导体衬底的第一表面包括第一部分和第二部分。第一部分比第二部分更靠近基底基板。至少一个输入焊盘设置在第一部分上，并且至少一个输出焊盘设置在第二部分上。

65. 发明授权

US07770452B2 Semiconductor sensor and manufacturing method therefor 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：US07770452B2
公开(公告)日：2010-08-10
申请号：US12081512
申请日：2008-04-17
申请人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
发明人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
IPC分类号： G01P15/00
CPC分类号： G01P15/0802 , B81B7/007 , G01P15/125 , G01P2015/0814 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/0566 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85201 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/30105 , H01L2924/3025 , Y10T29/49002 , H01L2924/00 , H01L2224/4876 , H01L2224/4866
摘要： A semiconductor sensor is disclosed that includes a semiconductor substrate, a sensing portion provided on the semiconductor substrate, and a pad in electrical communication with the sensing portion and provided on the semiconductor substrate. The semiconductor sensor also includes a bonding wire in electrical communication with the pad. Furthermore, the semiconductor sensor includes a cover member with a covering portion disposed over the semiconductor substrate for covering the sensing portion such that the covering portion is separated at a distance from the sensing portion. The cover member further includes a coupling portion provided on the semiconductor substrate at an area including the pad and for enabling electrical connection of the pad with the bonding wire therethrough.
摘要翻译：公开了一种半导体传感器，其包括半导体衬底，设置在半导体衬底上的感测部分，以及与感测部分电连接并设置在半导体衬底上的焊盘。半导体传感器还包括与焊盘电连通的接合线。此外，半导体传感器包括覆盖部件，覆盖部分设置在半导体衬底上，用于覆盖感测部分，使得覆盖部分与感测部分隔开一段距离。所述盖构件还包括在包括所述焊盘的区域处设置在所述半导体衬底上的耦合部分，并且用于使所述焊盘与所述接合线电连接。

66. 发明申请

US20080196501A1 Semiconductor sensor and manufacturing method therefor 有权
标题翻译：半导体传感器及其制造方法
公开(公告)号：US20080196501A1
公开(公告)日：2008-08-21
申请号：US12081512
申请日：2008-04-17
申请人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
发明人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
IPC分类号： G01P15/125
CPC分类号： G01P15/0802 , B81B7/007 , G01P15/125 , G01P2015/0814 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/0566 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85201 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/30105 , H01L2924/3025 , Y10T29/49002 , H01L2924/00 , H01L2224/4876 , H01L2224/4866
摘要： A semiconductor sensor is disclosed that includes a semiconductor substrate, a sensing portion provided on the semiconductor substrate, and a pad in electrical communication with the sensing portion and provided on the semiconductor substrate. The semiconductor sensor also includes a bonding wire in electrical communication with the pad. Furthermore, the semiconductor sensor includes a cover member with a covering portion disposed over the semiconductor substrate for covering the sensing portion such that the covering portion is separated at a distance from the sensing portion. The cover member further includes a coupling portion provided on the semiconductor substrate at an area including the pad and for enabling electrical connection of the pad with the bonding wire therethrough.
摘要翻译：公开了一种半导体传感器，其包括半导体衬底，设置在半导体衬底上的感测部分，以及与感测部分电连接并设置在半导体衬底上的焊盘。半导体传感器还包括与焊盘电连通的接合线。此外，半导体传感器包括覆盖部件，覆盖部分设置在半导体衬底上，用于覆盖感测部分，使得覆盖部分与感测部分隔开一段距离。盖构件还包括在包括衬垫的区域处设置在半导体衬底上的耦合部分，并且用于使焊盘与通过其的接合线电连接。

67. 发明授权

US07373821B2 Semiconductor sensor and manufacturing method therefor 失效
公开(公告)号：US07373821B2
公开(公告)日：2008-05-20
申请号：US11455919
申请日：2006-06-20
申请人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
发明人： Minekazu Sakai , Ryuichiro Abe , Akitoshi Yamanaka
IPC分类号： G01P15/00
CPC分类号： G01P15/0802 , B81B7/007 , G01P15/125 , G01P2015/0814 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/0566 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/48724 , H01L2224/48747 , H01L2224/85201 , H01L2224/8592 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/01079 , H01L2924/181 , H01L2924/30105 , H01L2924/3025 , Y10T29/49002 , H01L2924/00 , H01L2224/4876 , H01L2224/4866
摘要： A semiconductor sensor is disclosed that includes a semiconductor substrate, a sensing portion provided on the semiconductor substrate, and a pad in electrical communication with the sensing portion and provided on the semiconductor substrate. The semiconductor sensor also includes a bonding wire in electrical communication with the pad. Furthermore, the semiconductor sensor includes a cover member with a covering portion disposed over the semiconductor substrate for covering the sensing portion such that the covering portion is separated at a distance from the sensing portion. The cover member further includes a coupling portion provided on the semiconductor substrate at an area including the pad and for enabling electrical connection of the pad with the bonding wire therethrough.

68. 发明申请

US20080093740A1 Capacitive semiconductor sensor 失效
标题翻译：电容半导体传感器
公开(公告)号：US20080093740A1
公开(公告)日：2008-04-24
申请号：US11882135
申请日：2007-07-31
申请人： Minekazu Sakai , Michihiro Masuda , Kimiharu Kayukawa
发明人： Minekazu Sakai , Michihiro Masuda , Kimiharu Kayukawa
IPC分类号： H01L27/148
CPC分类号： G01P15/125 , B81B2201/0235 , B81C1/0023 , G01P1/023 , G01P15/0802 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16145 , H01L2224/16225 , H01L2924/00014 , H01L2924/16195 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A capacitive semiconductor sensor includes a sensor chip, a circuit chip, a plurality of bumps, and a plurality of dummy bumps. The sensor chip includes a dynamic quantity detector, which has a detection axis in one direction. The circuit chip includes a signal processing circuit. The sensor chip and the circuit chip are coupled by flip-chip bonding through the plurality of bumps. Furthermore, the sensor chip and the circuit chip are mechanically coupled through the plurality of dummy bumps.
摘要翻译：电容半导体传感器包括传感器芯片，电路芯片，多个凸块和多个虚拟凸块。传感器芯片包括具有一个方向的检测轴的动态量检测器。电路芯片包括信号处理电路。传感器芯片和电路芯片通过多个凸块的倒装芯片接合来耦合。此外，传感器芯片和电路芯片通过多个虚拟凸块机械耦合。

69. 发明授权

US07155977B2 Semiconductor dynamic quantity sensor 有权
标题翻译：半导体动量传感器
公开(公告)号：US07155977B2
公开(公告)日：2007-01-02
申请号：US11253579
申请日：2005-10-20
申请人： Minekazu Sakai
发明人： Minekazu Sakai
IPC分类号： G01P15/00 , G01P15/125
CPC分类号： G01P15/125 , G01P2015/0814
摘要： A capacitance type semiconductor dynamic quantity sensor includes a substrate having a support layer and a semiconductor layer mounted on the support layer, a weight portion displaceable in a predetermined direction, movable electrodes joined to the weight portion so as to be displaceable integrally with the weight portion, fixed electrodes disposed so as to confront the movable electrodes and beam-shaped beam portions that are deformable elastically to displace the weight portion. When a dynamic quantity is applied, the distance between each movable electrode and each fixed electrode being varied, and the applied dynamic quantity being detected on the basis of the capacitance variation between both the electrodes which is caused by the variation of this distance. The thickness h2 of the beam portion is set to be larger than the thickness h1 of the movable electrode.
摘要翻译：电容型半导体动态量传感器包括：具有支撑层和安装在支撑层上的半导体层的基板，可沿预定方向移位的重量部分，连接到重物部分的可移动电极，可与重物部分一体地移动设置成面对可弹性变形以移动重物部分的可动电极和梁形梁部分的固定电极。当施加动态量时，每个可移动电极和每个固定电极之间的距离是变化的，并且基于由该距离的变化引起的两个电极之间的电容变化而检测所施加的动态量。梁部的厚度h 2被设定为大于可动电极的厚度h 1。

70. 发明授权

US07059190B2 Semiconductor dynamic sensor having variable capacitor formed on laminated substrate 有权
标题翻译：具有可变电容器的半导体动态传感器形成在层压基板上
公开(公告)号：US07059190B2
公开(公告)日：2006-06-13
申请号：US10926147
申请日：2004-08-26
申请人： Minekazu Sakai , Tameharu Ohta
发明人： Minekazu Sakai , Tameharu Ohta
IPC分类号： G01P15/125
CPC分类号： G01P15/0802 , G01P15/125
摘要： An acceleration sensor is formed on a top surface of a laminated silicon-on-insulator substrate. The acceleration sensor is composed of first and second capacitors each including a movable electrode that moves according to acceleration imposed thereon. The first and the second capacitors are so made that their capacitances change differently when the same acceleration is imposed and that the capacitance difference represents an amount of acceleration imposed thereon. A third capacitor having an output electrode solidly connected to the base substrate via the insulation layer is also formed on the same silicon-on-insulator substrate. An output representing amount of acceleration is taken out from the output electrode of the third capacitor.
摘要翻译：加速度传感器形成在层叠绝缘体上硅衬底的顶表面上。加速度传感器由第一和第二电容器组成，每个电容器包括根据施加的加速度移动的可动电极。第一和第二电容器被制成使得当施加相同的加速度时，其电容变化不同，并且电容差表示施加的加速度量。具有通过绝缘层与基底基板牢固地连接的输出电极的第三电容器也形成在同一绝缘体上的衬底上。从第三电容器的输出电极取出表示加速度的输出。

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