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61. 发明授权

US07543571B2 Fuel pump mounting structural body 失效
标题翻译：燃油泵安装结构体
公开(公告)号：US07543571B2
公开(公告)日：2009-06-09
申请号：US11588323
申请日：2006-10-27
申请人： Masaki Ueno , Tomoyuki Tagami
发明人： Masaki Ueno , Tomoyuki Tagami
IPC分类号： F02M37/04
CPC分类号： F02M37/103
摘要： To provide a fuel pump mounting structural body that allows a mounting space for a fuel tank and the number of manufacturing processes to be reduced. A fuel pump mounting structural body accommodates a fuel pump unit in an opening portion disposed in a fuel tank. The structural body includes a step portion disposed in the opening portion. The step portion is formed one step lower than a wall surface of the fuel tank. A lid portion of the fuel pump unit is fittingly attached to the step portion and includes a delivery port for fuel. A guide member is disposed on a peripheral edge of the opening portion. The guide member includes a removably mounted holding member. The fuel pump unit is held in position by the fuel pump mounting structural body.
摘要翻译：提供一种燃料泵安装结构体，其允许用于燃料箱的安装空间和减少制造工艺的数量。燃料泵安装结构体在设置在燃料箱中的开口部中容纳燃料泵单元。结构体包括设置在开口部分中的台阶部分。台阶部比燃料箱的壁面低一级。燃料泵单元的盖部分适合地安装在台阶部分上并且包括用于燃料的输送口。引导构件设置在开口部的周缘上。引导构件包括可拆卸地安装的保持构件。燃料泵单元通过燃料泵安装结构体保持就位。

62. 发明申请

US20090126635A1 Metalorganic Chemical Vapor Deposition Reactor 有权
标题翻译：金属有机化学气相沉积反应器
公开(公告)号：US20090126635A1
公开(公告)日：2009-05-21
申请号：US12270867
申请日：2008-11-14
申请人： Masaki Ueno , Eiryo Takasuka
发明人： Masaki Ueno , Eiryo Takasuka
IPC分类号： B05C9/14
CPC分类号： C23C16/45585 , C23C16/303 , C23C16/45504 , C30B25/08
摘要： Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor (1) is furnished with a susceptor (5) and a duct (11). The susceptor (5) has a carrying surface for heating and carrying substrates (20). The duct (11) is for conducting reaction gas (G) to the substrates (20). The susceptor (5) is rotatable with the carrying surface fronting on the duct (11) interior. The duct (11) has channels (11b) and (11c), which merge on the duct end upstream of Point A4. The height of the duct (11) running along the reaction gas (G) flow direction monotonically diminishes heading toward the duct downstream end from Point P1 to Point P2, stays constant from Point P2 to Point P3, and monotonically diminishes heading downstream from Point P3. Point P1 lies upstream of Point A4, while Point P3 lies on the susceptor (5).
摘要翻译：提供MOCVD反应器，尽管沉积膜的厚度均匀化，但是可以提高膜沉积效率。 MOCVD反应器（1）配备有基座（5）和导管（11）。基座（5）具有用于加热和承载基板（20）的承载表面。管道（11）用于将反应气体（G）传导到基板（20）。基座（5）能够随着在导管（11）内部的承载表面旋转。管道（11）具有通道（11b）和（11c），其在点A4上游的管道端部合并。沿着反应气体（G）流动方向运行的管道（11）的高度单调地减小从点P1到点P2的管道下游端的朝向，从点P2到点P3保持恒定，并且单调地减小从点P3的下游。点P1位于点A4的上游，而点P3位于基座（5）上。

63. 发明授权

US07363920B2 Fuel supply control system for internal combustion engine 失效
标题翻译：内燃机燃油供应控制系统
公开(公告)号：US07363920B2
公开(公告)日：2008-04-29
申请号：US11606988
申请日：2006-12-01
申请人： Masaki Ueno
发明人： Masaki Ueno
IPC分类号： F02D41/38 , F02M51/00 , G06F17/00
CPC分类号： F02D41/1402
摘要： A fuel supply control system for an internal combustion engine having at least one fuel injection valve for injecting fuel into an intake pipe or a combustion chamber of the engine. A flow rate of air supplied to the engine and an air-fuel ratio are detected. A demand fuel injection amount is set according to an operating condition of the engine. An injection amount command value of fuel injected by at least one fuel injection valve according to the demand fuel injection amount. An amount of fuel burned in the engine is calculated according to the detected intake air flow rate and air-fuel ratio. At least two correlation parameters, which indicate a relationship between the estimated burned fuel amount and the injection amount command value, are identified. The injection amount command value is then corrected according to the at least two identified correlation parameters.
摘要翻译：一种用于内燃机的燃料供应控制系统，具有至少一个用于将燃料喷射到发动机的进气管或燃烧室中的燃料喷射阀。检测供给到发动机的空气的流量和空燃比。根据发动机的运转状况设定需求燃料喷射量。根据需要燃料喷射量由至少一个燃料喷射阀喷射的燃料的喷射量指令值。根据检测到的进气量和空燃比计算发动机燃烧的燃料量。识别表示估计燃烧燃料量与喷射量指令值之间的关系的至少两个相关参数。然后根据至少两个所识别的相关参数校正喷射量指令值。

64. 发明申请

US20080067760A1 Dual-Membered Suctional Gasket 失效
标题翻译：双组份吸风垫片
公开(公告)号：US20080067760A1
公开(公告)日：2008-03-20
申请号：US11664041
申请日：2005-07-27
申请人： Yutaka Kikuchi , Hirofumi Hino , Masaki Ueno , Masaaki Yamaguchi , Yasuaki Nagai
发明人： Yutaka Kikuchi , Hirofumi Hino , Masaki Ueno , Masaaki Yamaguchi , Yasuaki Nagai
IPC分类号： F16J15/02
CPC分类号： F16J15/025 , F16J15/061 , F16J15/3236 , Y10S277/928
摘要： The invention provides a novel dual-membered suctional gasket which has a reliable function to fit and fix the gasket to an object to be sealed, and also provides an effective suction effect and air venting function. For that purpose, the gasket which has a function to prevent fluid from leaking when compressed, comprises an inner sealing member 1 and outer sealing member 2 arranged on a surface perpendicular to a compressing direction; and a plurality of connecting members 3 for connecting and fixing the inner sealing member 1 and the outer sealing member 2 together. Suction cup structures are formed, when a proper amount of air closed between the inner sealing member and the outer sealing member is vented from the inner sealing member, the outer sealing member or the both sealing members by compressing the dual-membered gasket.
摘要翻译：本发明提供了一种新颖的双元吸入垫片，其具有将垫圈装配并固定到待密封物体的可靠功能，并且还提供有效的吸入效果和排气功能。为此，具有防止流体在压缩时泄漏的功能的垫圈包括内侧密封部件1和配置在与压缩方向正交的面的外部密封部件2; 以及多个用于将内密封件1和外密封件2连接固定在一起的连接件3。当通过压缩双元件垫片从内部密封件，外部密封件或两个密封件排出内部密封件和外部密封件之间的适当数量的空气，从而形成抽吸杯结构。

65. 发明申请

US20070174003A1 Control system for internal combustion engine 失效
标题翻译：内燃机控制系统
公开(公告)号：US20070174003A1
公开(公告)日：2007-07-26
申请号：US11650948
申请日：2007-01-09
申请人： Masaki Ueno , Katsuji Wada
发明人： Masaki Ueno , Katsuji Wada
IPC分类号： G06F19/00 , F02D11/10 , F02B17/00 , F02M51/00 , F02M25/07 , G06G7/70
CPC分类号： F02D41/32 , F02D41/0002 , F02D41/0007 , F02D41/0072 , F02D41/1401 , F02D41/3064 , F02D41/38 , F02D2041/1433 , F02D2200/0402 , F02D2200/0406 , F02D2200/0414 , Y02T10/42
摘要： A control system for an internal combustion engine having at least one fuel injection valve for injecting fuel to an intake pipe or a combustion chamber of the engine. Intake gas state parameters indicative of a state of the intake gases supplied to the engine are detected. Demand values of the intake gas state parameters are calculated according to operating condition parameters indicative of an operating condition of the engine. The intake gas state is controlled so that the intake gas state parameters coincide with the demand values. A control value is then calculated according to the operating condition parameters and deviations of the intake gas state parameters from the demand values. Accordingly, an amount of fuel injected by the at least one fuel injection valve is controlled according to the control value.
摘要翻译：一种用于内燃机的控制系统，具有至少一个用于将燃料喷射到发动机的进气管或燃烧室的燃料喷射阀。检测表示供给发动机的进气的状态的进气气体状态参数。根据指示发动机的运行状态的运行状态参数来计算进气状态参数的需求值。进气状态被控制，使得进气状态参数与需求值一致。然后根据操作条件参数和进气气体状态参数与需求值的偏差来计算控制值。因此，根据控制值控制由至少一个燃料喷射阀喷射的燃料量。

66. 发明申请

US20070033938A1 Engine system with a supercharger 有权
标题翻译：发动机系统带增压器
公开(公告)号：US20070033938A1
公开(公告)日：2007-02-15
申请号：US11496719
申请日：2006-08-01
申请人： Masaki Ueno
发明人： Masaki Ueno
IPC分类号： F02B33/44
CPC分类号： F02B39/10 , F02B37/004 , F02B37/013 , F02B37/04 , F02B37/10 , F02B37/14 , F02B37/18 , F02B37/22 , F02B37/24 , F02D41/0002 , F02D41/0007 , F02D2041/002 , Y02T10/144 , Y02T10/42
摘要： An engine system includes a compressor system which is at least partially driven by an electric motor, and a turbine system. The system includes a detector for detecting an actual supercharging pressure. A target supercharging pressure is determined based on operational conditions of the engine. A first control demand value is calculated to drive the motor controller, such that the actual supercharging pressure approaches the target supercharging pressure. A target value of the first control demand value is determined based on the operational conditions of the engine. A second control demand value, a difference between the target value and the first control command value is applied to the turbine system to adjust the rotation of the turbine such that the first control demand value converges to the target value.
摘要翻译：发动机系统包括至少部分地由电动机驱动的压缩机系统和涡轮机系统。该系统包括用于检测实际增压压力的检测器。目标增压压力是根据发动机的运行条件确定的。计算第一控制要求值以驱动电动机控制器，使得实际增压压力接近目标增压压力。基于发动机的运行状况来确定第一控制要求值的目标值。将第二控制要求值，目标值和第一控制指令值之间的差应用于涡轮机系统，以调整涡轮机的旋转，使得第一控制需求值收敛到目标值。

67. 发明授权

US07046490B1 Spin valve magnetoresistance sensor and thin film magnetic head 有权
标题翻译：自旋阀磁阻传感器和薄膜磁头
公开(公告)号：US07046490B1
公开(公告)日：2006-05-16
申请号：US09479267
申请日：2000-01-06
申请人： Masaki Ueno , Hideyasu Nagai , Koichi Suzuki , Tomoki Fukagawa , Fuminori Hikami
发明人： Masaki Ueno , Hideyasu Nagai , Koichi Suzuki , Tomoki Fukagawa , Fuminori Hikami
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , G11B5/3903 , H01L43/10
摘要： A spin valve magnetoresistance sensor of a thin film magnetic head. In one embodiment, a spin valve magnetoresistance sensor is provided with a spin valve film, in which a base layer including a first base film of Ta or some other nonmagnetic metal and, on top of this, a second base film of an alloy represented by NiFeX (where X is at least one element selected from among Cr, Nb, Rh) is formed on a substrate, and on top of this are formed by layering a free magnetic layer and pinned magnetic layer arranged to enclose a nonmagnetic conductive layer, as well as an antiferromagnetic layer, the second base film has an fcc (face-centered cubic) structure and also has a (111) orientation.
摘要翻译：薄膜磁头的自旋阀磁阻传感器。在一个实施例中，自旋阀磁阻传感器设置有自旋阀膜，其中包括Ta的第一基膜或其他一些非磁性金属的基底层，并且其上形成第二基底膜 NiFeX（其中X是选自Cr，Nb，Rh中的至少一种元素）形成在基板上，并且其上形成有通过分层设置为包围非磁性导电层的自由磁性层和固定磁性层而形成，如作为反铁磁层，第二基膜具有fcc（面心立方体）结构，并且还具有（111）取向。

68. 发明申请

US20060097353A1 Oxygen doping method to gallium nitride single crystal substrate and oxygen-doped n-type gallium nitride freestanding single crystal substrate 有权
标题翻译：氧氮掺杂方法对氮化镓单晶衬底和掺杂氧的n型氮化镓独立单晶衬底
公开(公告)号：US20060097353A1
公开(公告)日：2006-05-11
申请号：US11313828
申请日：2005-12-22
申请人： Kensaku Motoki , Masaki Ueno
发明人： Kensaku Motoki , Masaki Ueno
IPC分类号： H01L29/207 , H01L21/20
CPC分类号： C30B23/00 , C30B23/02 , C30B25/00 , C30B25/02 , C30B29/403 , C30B29/406 , C30B29/60 , C30B33/00 , H01L21/02389 , H01L21/02395 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02609 , H01L21/0262 , H01L29/2003 , H01L29/207
摘要： Oxygen can be doped into a gallium nitride crystal by preparing a non-C-plane gallium nitride seed crystal, supplying material gases including gallium, nitrogen and oxygen to the non-C-plane gallium nitride seed crystal, growing a non-C-plane gallium nitride crystal on the non-C-plane gallium nitride seed crystal and allowing oxygen to infiltrating via a non-C-plane surface to the growing gallium nitride crystal. Otherwise, oxygen can be doped into a gallium nitride crystal by preparing a C-plane gallium nitride seed crystal or a three-rotationally symmetric plane foreign material seed crystal, supplying material gases including gallium, nitrogen and oxygen to the C-plane gallium nitride seed crystal or the three-rotationally symmetric foreign seed crystal, growing a faceted C-plane gallium nitride crystal having facets of non-C-planes on the seed crystal, maintaining the facets on the C-plane gallium nitride crystal and allowing oxygen to infiltrating via the non-C-plane facets to the gallium nitride crystal.
摘要翻译：可以通过制备非C面氮化镓晶体，向非C面氮化镓晶种提供包括镓，氮和氧的材料气体，将氧可以掺杂到氮化镓晶体中，生长非C面在非C面氮化镓晶种上形成氮化镓晶体，并允许氧通过非C面表面渗入生长的氮化镓晶体。否则，可以通过制备C面氮化镓晶种或三旋转对称平面异物籽晶将氧气掺杂到氮化镓晶体中，将包括镓，氮和氧的材料气体供应到C面氮化镓晶种晶体或三旋转对称的外来晶种，在晶种上生长具有非C面的小面的C面氮化镓晶体，保持C面氮化镓晶体上的刻面，并允许氧渗透通过非C面面到氮化镓晶体。

69. 发明授权

US07040294B2 Fuel piping 失效
标题翻译：燃油管道
公开(公告)号：US07040294B2
公开(公告)日：2006-05-09
申请号：US11001006
申请日：2004-12-02
申请人： Katsuichi Yagisawa , Katsunori Komuro , Yasuaki Nagai , Toshikazu Saito , Masaki Ueno , Minoru Ueda
发明人： Katsuichi Yagisawa , Katsunori Komuro , Yasuaki Nagai , Toshikazu Saito , Masaki Ueno , Minoru Ueda
IPC分类号： F02M55/02
CPC分类号： F02D33/006 , B62J37/00 , F02B61/02 , F02M37/007 , F16L3/127 , F16L3/16 , F16L9/147 , F16L11/12 , F16L37/0987 , F16L58/1054 , F16L2011/047
摘要： To manufacture fuel piping for connecting a fuel tank and a drive unit including an engine using a resin material at a low cost and to cause the fuel piping to suitably follow the movement of the fuel tank and the drive unit when the vehicle is being operated. A fuel piping includes connectors at both ends of a pipe member formed of resin material into a thin tubular shape for connecting between a fuel tank and a fuel injection apparatus for supplying fuel to an engine of a two-wheel vehicle or the like via the connectors. One or more bent portions are formed at the midsection of the pipe member of the fuel piping.
摘要翻译：为了制造燃料管道，用于以低成本连接燃料箱和包括使用树脂材料的发动机的驱动单元，并且使得燃料管道在车辆运行时适当地跟随燃料箱和驱动单元的运动。燃料管道包括由树脂材料形成的管状构件的两端的连接器，形成为薄的管状，用于连接燃料箱和燃料喷射装置，用于通过连接器向两轮车辆等的发动机供应燃料。一个或多个弯曲部分形成在燃料管道的管构件的中部。

70. 发明授权

US06998284B2 Semiconductor device having quantum well structure, and method of forming the same 失效
标题翻译：具有量子阱结构的半导体器件及其形成方法
公开(公告)号：US06998284B2
公开(公告)日：2006-02-14
申请号：US11057830
申请日：2005-02-15
申请人： Takashi Kyono , Masaki Ueno , Katsushi Akita
发明人： Takashi Kyono , Masaki Ueno , Katsushi Akita
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/34333
摘要： A method of forming a semiconductor device having a quantum well structure, comprises the steps of: (a) forming a well film at a first temperature, the well film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium; (b) forming a first barrier film on the well film, the first barrier film being made of a III-V nitride semiconductor containing nitrogen, indium and gallium, and an indium composition of the first barrier film being smaller than that of the well film; (c) changing temperature without forming a semiconductor film; and (d) forming a second barrier film at a second temperature higher than the first temperature, the second barrier film being made of a III-V nitride semiconductor on the first barrier film, the first barrier film being formed at a third temperature, the third temperature being equal to or higher than the first temperature, and the third temperature being lower than the second temperature.
摘要翻译：一种形成具有量子阱结构的半导体器件的方法包括以下步骤：（a）在第一温度下形成阱膜，阱膜由含有氮，铟和镓的III-V族氮化物半导体制成; （b）在所述阱膜上形成第一阻挡膜，所述第一阻挡膜由包含氮，铟和镓的III-V族氮化物半导体制成，并且所述第一阻挡膜的铟组合物小于所述阱膜的铟组分 ; （c）不形成半导体膜而改变温度; 和（d）在高于第一温度的第二温度下形成第二阻挡膜，第二阻挡膜由第一阻挡膜上的III-V族氮化物半导体构成，第一阻挡膜形成在第三温度，第三温度等于或高于第一温度，第三温度低于第二温度。

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