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61. 发明授权

US4768113A Tape cassette loading and unloading apparatus having a lock mechanism for locking a tape cassette in a loading position 失效
标题翻译：具有用于将带盒锁定在装载位置的锁定机构的带盒装载和卸载装置
公开(公告)号：US4768113A
公开(公告)日：1988-08-30
申请号：US823381
申请日：1986-01-28
申请人： Manabu Sato
发明人： Manabu Sato
IPC分类号： G11B15/675
CPC分类号： G11B15/67549
摘要： A tape cassette loading and unloading apparatus comprises a holder which is inserted with a tape cassette, a belt-driven transmitting mechanism for moving the holder between a cassette receiving position and a predetermined loading position, and a lock mechanism for locking the transmitting mechanism when the holder reaches the predetermined loading position so that the holder is immovably locked in the predetermined loading position.
摘要翻译：盒式磁带装载和卸载装置包括一个插入带盒的保持架，一个用于在盒接收位置和预定装载位置之间移动保持架的带驱动传动机构，以及一个用于锁定传送机构的锁定机构保持器到达预定的装载位置，使得保持器不可移动地锁定在预定的装载位置。

62. 发明授权

US09349750B2 Semiconductor device and display device 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US09349750B2
公开(公告)日：2016-05-24
申请号：US14077390
申请日：2013-11-12
申请人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
发明人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/78648
摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.
摘要翻译：半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

63. 发明授权

US08813353B2 Method of manufacturing a dielectric structure 有权
标题翻译：电介质结构的制造方法
公开(公告)号：US08813353B2
公开(公告)日：2014-08-26
申请号：US12785037
申请日：2010-05-21
申请人： Yasuhiko Inui , Takamichi Ogawa , Seiji Ichiyanagi , Jun Otsuka , Manabu Sato
发明人： Yasuhiko Inui , Takamichi Ogawa , Seiji Ichiyanagi , Jun Otsuka , Manabu Sato
IPC分类号： H05K3/20 , H01L23/498 , H05K1/16 , H01L23/50 , H01L21/48 , H05K1/09 , H05K3/46
CPC分类号： H05K1/162 , H01L21/4857 , H01L23/49822 , H01L23/50 , H01L2924/0002 , H01L2924/09701 , H05K1/092 , H05K3/4644 , H05K2201/0175 , H05K2201/0352 , H05K2201/0355 , H05K2201/09309 , H05K2201/09509 , H05K2201/09718 , H05K2201/09736 , Y10T29/49124 , Y10T29/49126 , Y10T29/49128 , Y10T29/49155 , Y10T29/49165 , Y10T29/4981 , Y10T407/1946 , Y10T407/1948 , H01L2924/00
摘要： A dielectric structure including a metal foil, a dielectric layer and a conductor layer provided in this order, wherein the metal foil has a thickness of from 10 to 40 μm, the dielectric layer has a thickness of from 0.3 to 5 μm, and the conductor layer has a thickness of from 0.3 to 10 μm. The dielectric structure has plural vias which are separated from each other, and which penetrate through both of the dielectric layer and the conductor layer. The vias of the dielectric layer have different diameters which are in a range of from 100 to 300 μm, a diameter of each of the vias of the conductor layer is larger than a diameter of a corresponding via of the dielectric layer by 5 to 50 μm, and a minimum via pitch is from 100 to 350 μm.
摘要翻译：包括依次设置的金属箔，电介质层和导体层的电介质结构体，其中金属箔的厚度为10〜40μm，电介质层的厚度为0.3〜5μm，导体层的厚度为0.3〜10μm。电介质结构具有彼此分离并且穿透介电层和导体层两者的多个通孔。电介质层的通孔具有不同的直径，范围为100〜300μm，导体层的通孔的直径大于电介质层的通孔的直径为5〜50μm ，最小通孔间距为100〜350μm。

64. 发明授权

US08350306B2 Capacitor to be incorporated in wiring substrate, method for manufacturing the capacitor, and wiring substrate 有权
标题翻译：配线基板中的电容器，电容器的制造方法以及布线基板
公开(公告)号：US08350306B2
公开(公告)日：2013-01-08
申请号：US12951739
申请日：2010-11-22
申请人： Motohiko Sato , Kazuhiro Hayashi , Kenji Murakami , Motonobu Kurahashi , Yusuke Kaieda , Jun Otsuka , Manabu Sato
发明人： Motohiko Sato , Kazuhiro Hayashi , Kenji Murakami , Motonobu Kurahashi , Yusuke Kaieda , Jun Otsuka , Manabu Sato
IPC分类号： H01L21/02
CPC分类号： H05K1/0231 , H01G4/228 , H01G4/30 , H01G4/38 , H01L23/49822 , H01L2924/0002 , H01L2924/3511 , H05K1/185 , H05K3/4602 , H05K2201/10712 , H01L2924/00
摘要： A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face.
摘要翻译：一种电容器，其具有电容器，所述电容器包括：电容器主体，包括多个电介质层和设置在所述不同电介质层之间的内部电极层，其中所述电容器本体在所述电容器主体的至少一个侧面中，从所述电容器主体的第一主面和位于与所述第一主面相反的一侧的第二主面中的至少一个在所述电容器本体的厚度方向上延伸的凹部。

65. 发明授权

US08157968B2 Oven observing equipment and push-out ram having the same 有权
标题翻译：烤箱观察设备和推出拉杆具有相同的功能
公开(公告)号：US08157968B2
公开(公告)日：2012-04-17
申请号：US12224336
申请日：2007-01-12
申请人： Manabu Sato , Hironobu Inamasu , Kiyoshi Nakata , Keiji Yoshimoto
发明人： Manabu Sato , Hironobu Inamasu , Kiyoshi Nakata , Keiji Yoshimoto
IPC分类号： C10B45/00 , F21V29/00
CPC分类号： H04N5/2252 , C10B33/10 , C10B45/00 , F27D21/02 , H04N5/2253 , H04N2005/2255
摘要： An oven observing equipment capable of observing the inside of an oven turned to a high temperature precisely includes: a housing 13 having an intake part for cooling air, and a discharging part for discharging the cooling air after being used for cooling; and an imaging device 20 contained in this housing 13 near the discharge part. This imaging device 20 is composed of integrated combination of an image sensor 16; plate-like thermoelectric cooling elements 18a to 18d arranged in a state that their heat-absorbing faces surround the periphery of a body of the image sensor; thermoconductive blocks 17a to 17d embedded in the gaps between the image sensor body and the thermoelectric cooling elements 18a to 18d; and cooling fins 19a to 19d formed on the heat-radiating faces of the thermoelectric cooling elements 18a to 18d are integrated with each other.
摘要翻译：能够观察高温炉的内部的烤箱观察装置精确地包括：具有用于冷却空气的进气部的壳体13和用于冷却后的冷却空气的排出部的排出部。以及容纳在该壳体13中的放电部附近的摄像装置20。该成像装置20由图像传感器16，板状热电冷却元件18a〜18d，其以吸热面围绕图像传感器的主体的周边的状态配置; 嵌入在图像传感器主体和热电冷却元件18a至18d之间的间隙中的导热块17a至17d; 并且形成在热电冷却元件18a至18d的散热面上的散热片19a至19d彼此一体化。

66. 发明授权

US08128831B2 Plasma etching method and computer-readable storage medium 有权
标题翻译：等离子体蚀刻方法和计算机可读存储介质
公开(公告)号：US08128831B2
公开(公告)日：2012-03-06
申请号：US11617440
申请日：2006-12-28
申请人： Manabu Sato , Yoshiki Igarashi , Yoshimitsu Kon , Masanobu Honda
发明人： Manabu Sato , Yoshiki Igarashi , Yoshimitsu Kon , Masanobu Honda
IPC分类号： H01L21/302
CPC分类号： H01L21/0273 , H01L21/31116 , H01L21/31138 , H01L21/31144
摘要： A plasma processing apparatus includes a first and a second electrode disposed to face each other in a processing chamber, the second electrode supporting a substrate; a first RF power supply for applying a first RF power of a higher frequency to the second electrode; a second RF power supply for applying a second RF power of a lower frequency to the second electrode; and a DC power source for applying a DC voltage to the first electrode. In a plasma etching method for etching a substrate by using the plasma processing apparatus, the first and the second radio frequency power are applied to the second electrode to convert a processing gas containing no CF-based gas into a plasma and a DC voltage is applied to the first electrode, to thereby etch an organic film or an amorphous carbon film on the substrate by using a silicon-containing mask.
摘要翻译：等离子体处理装置包括在处理室中彼此面对的第一和第二电极，第二电极支撑基板; 用于向第二电极施加较高频率的第一RF功率的第一RF电源; 用于将较低频率的第二RF功率施加到所述第二电极的第二RF电源; 以及用于向第一电极施加DC电压的DC电源。在通过使用等离子体处理装置蚀刻基板的等离子体蚀刻方法中，将第一和第二射频功率施加到第二电极，以将不含CF基气体的处理气体转换成等离子体，并施加DC电压从而通过使用含硅掩模在基板上蚀刻有机膜或非晶碳膜。

67. 发明申请

US20110214815A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20110214815A1
公开(公告)日：2011-09-08
申请号：US13113330
申请日：2011-05-23
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

68. 发明授权

US07988816B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07988816B2
公开(公告)日：2011-08-02
申请号：US11157061
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ooya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.
摘要翻译：等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体以在晶片W上进行等离子体蚀刻。该装置还包括设置在晶片周围的冷却环，设置在冷却周围的校正环环和直接连接到校正环的可变直流电源，所述直流电压被预设为向校正环提供相对于地电位的负偏压，用于吸引等离子体中的离子并将校正环的温度增加到补偿由于冷却环导致的目标基板的边缘附近的空间的温度的降低。

69. 发明申请

US20110088850A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体处理装置，等离子体处理方法和储存介质
公开(公告)号：US20110088850A1
公开(公告)日：2011-04-21
申请号：US12973563
申请日：2010-12-20
申请人： Masanobu HONDA , Yutaka Matsui , Manabu Sato
发明人： Masanobu HONDA , Yutaka Matsui , Manabu Sato
IPC分类号： H01L21/3065
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/3255 , H01J37/32706 , H01J37/32862 , H01J37/32926 , H01L21/02532 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out.
摘要翻译：一种使聚合物能够从电绝缘电极移除的等离子体处理装置。等离子体处理装置的基座设置在其中具有处理空间的基板处理室中。射频电源连接到基座。上电极板与基板处理室的壁和基座电绝缘。直流电源连接到上电极板。等离子体处理装置的控制器根据要执行的RIE处理的处理条件确定施加到上电极板的负DC电压的值。

70. 发明申请

US20110083794A1 CAPACITOR TO BE INCORPORATED IN WIRING SUBSTRATE, METHOD FOR MANUFACTURING THE CAPACITOR, AND WIRING SUBSTRATE 有权
标题翻译：在配线基板中并入的电容器，制造电容器的方法和接线基板
公开(公告)号：US20110083794A1
公开(公告)日：2011-04-14
申请号：US12951895
申请日：2010-11-22
申请人： Motohiko Sato , Kazuhiro Hayashi , Kenji Murakami , Motonobu Kurahashi , Yusuke Kaieda , Jun Otsuka , Manabu Sato
发明人： Motohiko Sato , Kazuhiro Hayashi , Kenji Murakami , Motonobu Kurahashi , Yusuke Kaieda , Jun Otsuka , Manabu Sato
IPC分类号： B29C65/02
CPC分类号： H05K1/0231 , H01G4/228 , H01G4/30 , H01G4/38 , H01L23/49822 , H01L2924/0002 , H01L2924/3511 , H05K1/185 , H05K3/4602 , H05K2201/10712 , H01L2924/00
摘要： A wiring substrate in which a capacitor is provided, the capacitor comprising a capacitor body including a plurality of dielectric layers and internal electrode layers provided between the different dielectric layers, wherein said capacitor body has, in at least one side face of said capacitor body, recesses extending in a thickness direction of said capacitor body from at least one of a first principal face of said capacitor body and a second principal face positioned on the side opposite to the first principal face.
摘要翻译：一种电容器，其具有电容器，所述电容器包括：电容器主体，包括多个电介质层和设置在所述不同电介质层之间的内部电极层，其中所述电容器本体在所述电容器主体的至少一个侧面中，从所述电容器主体的第一主面和位于与所述第一主面相反的一侧的第二主面中的至少一个在所述电容器本体的厚度方向上延伸的凹部。

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