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61. 发明授权

US06569748B1 Substrate and production method thereof 失效
标题翻译：基材及其制备方法
公开(公告)号：US06569748B1
公开(公告)日：2003-05-27
申请号：US09706877
申请日：2000-11-07
申请人： Kiyofumi Sakaguchi , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Nobuhiko Sato
IPC分类号： H01L2122
CPC分类号： H01L21/2007
摘要： There are provided a method of producing an SOI wafer of high quality with excellent controllability, productivity and economy and a wafer produced by such a method. In the method of producing a substrate utilizing wafer bonding, a first substrate member and a second substrate member are mutually bonded, and then the second substrate member is separated from the first substrate member at the interface of a first layer and a second layer formed on the main surface of the first substrate member, whereby the second layer is transferred onto the second substrate member. In the separation, the separation position at the interface of the first and the second layers is ensured by varying the porosity of a porous Si layer, forming an easily separable plane by the coagulation of pores in porous Si, effecting ion implantation to the interface or utilizing a heteroepitaxial interface.
摘要翻译：提供了一种制造具有优异的可控性，生产率和经济性的高质量的SOI晶片的方法和通过这种方法制造的晶片。在利用晶片接合的基板的制造方法中，将第一基板部件和第二基板部件相互结合，然后将第二基板部件与第一基板部件在形成在第一基板部件第一基板部件的主表面，由此将第二层转移到第二基板部件上。在分离中，通过改变多孔Si层的孔隙率来确保第一层和第二层的界面处的分离位置，通过多孔Si中的孔的凝结形成容易分离的平面，进行离子注入界面或利用异质外延界面。

62. 发明授权

US06375738B1 Process of producing semiconductor article 失效
标题翻译：半导体制品生产工艺
公开(公告)号：US06375738B1
公开(公告)日：2002-04-23
申请号：US09534068
申请日：2000-03-24
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： C30B2518
CPC分类号： H01L21/76259 , H01L21/306 , Y10S117/915
摘要： A process of producing a semiconductor article is disclosed which comprises the steps of epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers differing from each other in at least one of the kind and the concentration of an impurity, making porous the plurality of single-crystal semiconductor layers so as to form a high porosity layer and a low porosity layer, forming a non-porous single-crystal layer on a surface of the single-crystal semiconductor layer as made porous, and bonding and single-crystal substrate and a support substrate to each other, wherein the bonded single-crystal substrate and support substrate are separated at at least one of a location in the high porosity layer and an interface of the high porosity layer with a layer adjacent thereto.
摘要翻译：公开了一种制造半导体产品的方法，其包括以下步骤：在单晶衬底的至少一个表面上外延生长至少一种不同类型和浓度的多个单晶半导体层，使多个单晶半导体层多孔化，从而形成高孔隙率层和低孔隙率层，在单晶半导体层的表面上形成多孔的多孔单晶层，以及接合和单晶基板和支撑基板，其中所述结合的单晶基板和支撑基板在高孔隙率层的位置和高孔隙率层的界面中的至少一个与层相邻。

63. 发明授权

US06350703B1 Semiconductor substrate and production method thereof 失效
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06350703B1
公开(公告)日：2002-02-26
申请号：US09347260
申请日：1999-07-06
申请人： Kiyofumi Sakaguchi , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Nobuhiko Sato
IPC分类号： H01L2131
CPC分类号： H01L21/76243 , C30B29/06 , C30B31/22
摘要： A method of producing an SOI substrate is disclosed which comprises a step of preparing an Si substrate prepared by the floating zone process (FZ process), a step of implanting oxygen ions from the principal surface side of the Si substrate thereinto to form an ion-implanted layer in the Si substrate, and a buried Si oxide layer forming step of forming an Si oxide layer buried below the single-crystal Si layer on the principal surface side, by a heat treatment of the Si substrate.
摘要翻译：公开了一种制造SOI衬底的方法，其包括制备通过浮动区工艺（FZ工艺）制备的Si衬底的步骤，从Si衬底的主表面侧注入氧离子以形成离子 - 并且通过Si衬底的热处理，在主表面侧上形成埋在单晶Si层之下的Si氧化物层的掩埋Si氧化物层形成步骤。

64. 发明授权

US06326279B1 Process for producing semiconductor article 失效
标题翻译：半导体制品的制造方法
公开(公告)号：US06326279B1
公开(公告)日：2001-12-04
申请号：US09532079
申请日：2000-03-21
申请人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
发明人： Yasuo Kakizaki , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L2176
CPC分类号： H01L21/76259
摘要： To lessen the number of steps and reduce cost in the manufacture of high-quality SOI substrate, a process for producing a semiconductor article comprises the steps of forming a porous semiconductor layer at at least one surface of a first substrate, forming a non-porous single-crystal semiconductor layer on the porous semiconductor layer, bonding the first substrate to a second substrate with the former's non-porous single-crystal semiconductor layer facing the latter in contact, to form a bonded structure, and dividing the bonded structure at the porous semiconductor layer, wherein the process further comprises the step of previously forming on the one surface of the first substrate an epitaxial silicon layer in a thickness at least n-times (n≧2) the thickness of the porous semiconductor layer.
摘要翻译：为了减少步骤数量并降低制造高质量SOI衬底的成本，制造半导体产品的方法包括以下步骤：在第一衬底的至少一个表面上形成多孔半导体层，形成无孔在多孔半导体层上形成单晶半导体层，将第一衬底与第二衬底接合，使前者的无孔单晶半导体层面向后面的非多孔单晶半导体层接触，形成接合结构，并将接合结构分为多孔半导体层，其中所述工艺还包括以下步骤：在所述第一衬底的所述一个表面上形成厚度至少为所述多孔半导体层的厚度的n倍（n≥2）的厚度的外延硅层。

65. 发明授权

US06313014B1 Semiconductor substrate and manufacturing method of semiconductor substrate 有权
标题翻译：半导体衬底及半导体衬底的制造方法
公开(公告)号：US06313014B1
公开(公告)日：2001-11-06
申请号：US09332102
申请日：1999-06-14
申请人： Kiyofumi Sakaguchi , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Nobuhiko Sato
IPC分类号： H01L2972
CPC分类号： H01L21/76243
摘要： A single-crystal silicon substrate having a surface layer which has been heat-treated in a reducing atmosphere containing hydrogen is prepared. An ion-implantation layer is formed by implanting oxygen ions. Subsequently, a buried oxide film (BOX) layer is formed by a desired heat-treatment utilizing the ion-implantation layer. An SOI substrate having a single-crystal silicon layer (SOI layer) which is formed on the BOX layer and has a remarkably reduced number of defects such as COPs is obtained.
摘要翻译：制备具有在含有还原气氛中进行热处理的表面层的单晶硅基板。通过注入氧离子形成离子注入层。随后，通过利用离子注入层的期望的热处理形成掩埋氧化膜（BOX）层。获得了在BOX层上形成单晶硅层（SOI层）的SOI衬底，并且具有明显减少的诸如COP的缺陷数量。

66. 发明授权

US06171982B2 Method and apparatus for heat-treating an SOI substrate and method of preparing an SOI substrate by using the same 有权
标题翻译：用于对SOI衬底进行热处理的方法和装置及其制备方法
公开(公告)号：US06171982B2
公开(公告)日：2001-01-09
申请号：US09218416
申请日：1998-12-22
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： H01L2126
CPC分类号： H01L21/3247 , H01L21/67115 , H01L21/76254 , H01L21/76256 , H01L21/76259
摘要： An SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is heat-treated in a hydrogen-containing reducing atmosphere in order to smooth the surface and reduce the boron concentration without damaging the film thickness uniformity in a single wafer and among different wafers. The method is characterized in that the single crystal silicon film is arranged opposite to a member of non-oxidized silicon for heat treatment.
摘要翻译：在其表面上形成有绝缘体的单晶硅膜的SOI衬底在含氢还原气氛中进行热处理，以平滑表面并降低硼浓度，而不损害单个晶片中的膜厚度均匀性，在不同的晶片之间。该方法的特征在于，将单晶硅膜与非氧化硅的构件相对地进行热处理。

67. 发明授权

US06103598A Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06103598A
公开(公告)日：2000-08-15
申请号：US678694
申请日：1996-07-11
申请人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/76243
摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.
摘要翻译：提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

68. 发明授权

US5278092A Method of forming crystal semiconductor film 失效
标题翻译：形成晶体半导体膜的方法
公开(公告)号：US5278092A
公开(公告)日：1994-01-11
申请号：US818440
申请日：1991-12-27
申请人： Nobuhiko Sato
发明人： Nobuhiko Sato
IPC分类号： C30B25/18 , H01L21/20 , H01L21/762 , H01L21/205
CPC分类号： C30B25/18 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02645 , H01L21/76248
摘要： A method of forming a crystal semiconductor by depositing on a substrate with a depression a first layer with a higher nucleation density and a smaller mechanical abrasion rate than a second layer deposited on the first layer and forming a nucleation surface by removing a minute portion of the second layer in the area of the depression, thereby uncovering the first layer. The uncovered portion of the first layer is sufficiently minute so as to form only a single nucleus from which a monocrystal is grown by a crystal formation process from the single nucleus. The monocrystal is allowed to grow beyond the area of the depression. An abrasive grain mechanically polishes the grown monocrystal to a level corresponding to the surface of the first layer, thereby flattening the monocrystal.
摘要翻译：一种形成晶体半导体的方法，其通过在具有凹陷的衬底上沉积具有比沉积在第一层上的第二层更高的成核密度和更小的机械磨损率的第一层并通过除去第一层的微小部分来形成成核表面第二层，从而露出第一层。第一层的未覆盖部分足够微小，从而仅形成单晶核，通过晶体形成过程从单核生长单晶。允许单晶生长超过凹陷区域。研磨颗粒将生长的单晶机械抛光到与第一层的表面相对应的水平，从而使单晶体变平。

69. 发明授权

US08629857B2 Organic electro-luminescent display apparatus and imaging apparatus including the same 失效
标题翻译：有机电致发光显示装置及包含该电子显示装置的成像装置
公开(公告)号：US08629857B2
公开(公告)日：2014-01-14
申请号：US13003251
申请日：2009-07-09
申请人： Takashi Moriyama , Toshihiko Mimura , Nobuhiko Sato , Kohei Nagayama , Masami Iseki , Nozomu Izumi , Junya Tamaki
发明人： Takashi Moriyama , Toshihiko Mimura , Nobuhiko Sato , Kohei Nagayama , Masami Iseki , Nozomu Izumi , Junya Tamaki
IPC分类号： G09G3/30
CPC分类号： H01L27/3248 , H01L27/3209
摘要： Light is prevented from being emitted from a region that overlaps a contract hole in a structure in which light emitting devices are stacked. A stacked organic electro-luminescent display apparatus includes a contact hole that electrically connects a first electrode or a second electrode to a driving circuit. The first or second electrode and a second organic compound layer are provided in the contact hole, and the second organic compound layer existing in the contact hole does not emit light.
摘要翻译：防止光从发光装置堆叠的结构中与收缩孔重叠的区域发射。层叠的有机电致发光显示装置包括将第一电极或第二电极电连接到驱动电路的接触孔。第一或第二电极和第二有机化合物层设置在接触孔中，并且存在于接触孔中的第二有机化合物层不发光。

70. 发明授权

US08304278B2 Photoelectric conversion apparatus and image pickup system using photoelectric conversion apparatus 有权
标题翻译：光电转换装置和使用光电转换装置的摄像系统
公开(公告)号：US08304278B2
公开(公告)日：2012-11-06
申请号：US12904269
申请日：2010-10-14
申请人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
发明人： Hiroaki Naruse , Takashi Okagawa , Ryuichi Mishima , Nobuhiko Sato , Hiroshi Yuzurihara
IPC分类号： H01L31/18
CPC分类号： H01L27/14636 , H01L21/76807 , H01L21/7681 , H01L21/76829 , H01L21/76834 , H01L23/53238 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/14687 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.
摘要翻译：光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及电连接到第二插头的布线形成双镶嵌结构的一部分。通过这样的结构，可以提高光到光电转换元件的入射效率。

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