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1. 发明授权

US06103598A Process for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US06103598A
公开(公告)日：2000-08-15
申请号：US678694
申请日：1996-07-11
申请人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
发明人： Kenji Yamagata , Takao Yonehara , Nobuhiko Sato , Kiyofumi Sakaguchi
IPC分类号： H01L21/306 , H01L21/762
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/76243
摘要： A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.
摘要翻译：提供一种制造半导体衬底的方法，其包括：通过使衬底硅多孔化和多孔硅层上外延生长的无孔单晶硅层，提供由其上形成有多孔硅层的硅制成的第一衬底，将第一衬底层压到第二基板，其中第一和第二基板的至少一个层叠面具有氧化硅层，并且无孔单晶硅层插入在层压基板之间，并且通过蚀刻去除多孔硅层，其中多孔通过蚀刻除去硅层，蚀刻剂以不大于10埃每分钟的蚀刻速率蚀刻无孔单晶硅层和氧化硅层。

2. 发明授权

US06246068B1 Semiconductor article with porous structure 有权
标题翻译：具有多孔结构的半导体制品
公开(公告)号：US06246068B1
公开(公告)日：2001-06-12
申请号：US09212432
申请日：1998-12-16
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： H01L4700
CPC分类号： H01L21/02032 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76251 , H01L21/76254 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.
摘要翻译：提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。此时，在多孔Si层上外延生长无孔单晶Si层。此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。随后，进行选择性蚀刻以去除多孔Si层。

3. 发明授权

US06238586B1 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
公开(公告)号：US06238586B1
公开(公告)日：2001-05-29
申请号：US09298056
申请日：1999-04-22
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21302
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

4. 发明授权

US06254794B1 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
标题翻译：用于蚀刻多孔硅的蚀刻溶液，使用蚀刻溶液的蚀刻方法和使用蚀刻溶液制备半导体部件的方法
公开(公告)号：US06254794B1
公开(公告)日：2001-07-03
申请号：US09298054
申请日：1999-04-22
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21302
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.
摘要翻译：一种制备半导体部件的方法包括：形成具有非多孔硅单晶层和多孔硅层的衬底;将具有由绝缘材料制成的表面的另一衬底结合到所述单晶层的表面; 通过浸渍在蚀刻溶液中来除去多孔硅层。

5. 发明授权

US6121117A Process for producing semiconductor substrate by heat treating 失效
标题翻译：通过热处理制造半导体衬底的方法
公开(公告)号：US6121117A
公开(公告)日：2000-09-19
申请号：US118872
申请日：1998-07-20
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： C30B33/00 , H01L21/20 , H01L21/306 , H01L21/3105 , H01L21/324 , H01L21/762 , H01L31/18 , H01L21/30
CPC分类号： H01L21/3247 , C30B29/06 , C30B33/00 , H01L21/2022 , H01L21/30604 , H01L21/31051 , H01L21/324 , H01L21/76251 , H01L21/76256 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.
摘要翻译：一种制造半导体衬底的方法包括在还原气氛中对其中具有单晶的衬底进行热处理。

6. 发明授权

US5854123A Method for producing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US5854123A
公开(公告)日：1998-12-29
申请号：US729722
申请日：1996-10-07
申请人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
发明人： Nobuhiko Sato , Takao Yonehara , Kiyofumi Sakaguchi
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L21/322 , H01L21/762 , H01L27/12 , H01L31/18 , H01L21/76
CPC分类号： H01L21/02032 , H01L21/3221 , H01L21/3223 , H01L21/3226 , H01L21/76251 , H01L21/76254 , H01L21/76259 , H01L31/1892 , Y02E10/50
摘要： A method is provided for producing, with high reproducibility, an SOI substrate which is flat and high in quality, and simultaneously for achieving resources saving and reduction in cost through recycling of a substrate member. For accomplishing this, a porous-forming step is performed forming a porous Si layer on at least a surface of an Si substrate and a large porosity layer forming step is performed for forming a large porosity layer in the porous Si layer. This large porosity layer forming step is performed by implanting ions into the porous Si layer with a given projection range or by changing current density of anodization in said porous-forming step. At this time, a non-porous single-crystal Si layer is epitaxial-grown on the porous Si layer. Thereafter, the surface of the porous Si layer and a support substrate are bonded together, and then separation is performed at the porous Si layer with the large porosity. Subsequently, selective etching is performed to remove the porous Si layer.
摘要翻译：提供了一种以高再现性制造平坦且质量高的SOI衬底的方法，同时用于通过再循环衬底构件实现资源节省和降低成本。为了实现这一点，在Si衬底的至少一个表面上进行形成多孔Si层的多孔形成步骤，并且进行大孔隙层形成步骤以在多孔Si层中形成大孔隙率层。通过将离子注入到具有给定投影范围的多孔Si层中或通过改变所述多孔形成步骤中的阳极氧化的电流密度来进行该大孔隙率层形成步骤。此时，在多孔Si层上外延生长无孔单晶Si层。此后，将多孔Si层和支撑基板的表面接合在一起，然后在具有大孔隙率的多孔Si层上进行分离。随后，进行选择性蚀刻以去除多孔Si层。

7. 发明授权

US5767020A Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
标题翻译：用于蚀刻多孔硅的蚀刻溶液，使用蚀刻溶液的蚀刻方法和使用蚀刻溶液制备半导体部件的方法
公开(公告)号：US5767020A
公开(公告)日：1998-06-16
申请号：US835381
申请日：1992-02-14
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21/20 , H01L21/306 , H01L21/762
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/30604 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.
摘要翻译：一种制备半导体部件的方法包括：形成具有无孔硅单晶层和多孔硅层的衬底; 将具有由绝缘材料制成的表面的另一衬底结合到单晶层的表面; 并通过浸入蚀刻溶液中蚀刻去除多孔硅层。

8. 发明授权

US06605518B1 Method of separating composite member and process for producing thin film 失效
标题翻译：分离复合材料的方法和制备薄膜的方法
公开(公告)号：US06605518B1
公开(公告)日：2003-08-12
申请号：US09558657
申请日：2000-04-26
申请人： Kazuaki Ohmi , Katsumi Nakagawa , Nobuhiko Sato , Kiyofumi Sakaguchi , Kazutaka Yanagita , Takao Yonehara
发明人： Kazuaki Ohmi , Katsumi Nakagawa , Nobuhiko Sato , Kiyofumi Sakaguchi , Kazutaka Yanagita , Takao Yonehara
IPC分类号： H01L2146
CPC分类号： H01L21/76259 , Y10S438/96
摘要： To cause a crack at a fixed position in a separation layer, a method of separating a composite member includes the steps of forming a separation layer inside a composite member, forming inside the separation layer a stress riser layer in which an in-plane stress has concentratedly been produced to an extent that does not cause separation by the in-plane stress, and enlarging the in-plane stress to cause a crack in the stress riser layer, thereby separating the composite member.
摘要翻译：为了在分离层中的固定位置产生裂纹，分离复合构件的方法包括在复合构件内部形成分离层的步骤，在分离层的内部形成面内应力的应力提升层集中制造到不会由于面内应力而产生分离，扩大面内应力，引起应力提升层的裂纹，从而分离复合部件。

9. 发明授权

US06613678B1 Process for manufacturing a semiconductor substrate as well as a semiconductor thin film, and multilayer structure 有权
标题翻译：用于制造半导体衬底以及半导体薄膜的方法和多层结构
公开(公告)号：US06613678B1
公开(公告)日：2003-09-02
申请号：US09312843
申请日：1999-05-17
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21311
CPC分类号： H01L21/76254 , H01L21/2007
摘要： A process for manufacturing a semiconductor substrate, comprising the step of preparing a first substrate which has a surface layer portion subjected to hydrogen annealing, the separation-layer formation step of implanting ions of hydrogen or the like into the first substrate from the side of the surface layer portion, thereby to form a separation layer, the adhesion step of bonding the first substrate and a second substrate to each other so that the surface layer portion may lie inside, thereby to form a multilayer structure, and the transfer step of separating the multilayer structure by utilizing the separation layer, thereby to transfer the less-defective layer of the surface layer portion onto the second substrate. The less-defective layer is a single-crystal silicon layer in which defects inherent in a bulk wafer, such as COPs and FPDs, are decreased.
摘要翻译：一种制造半导体衬底的方法，包括制备具有经过氢退火的表面层部分的第一衬底的步骤，从所述第一衬底的侧面注入氢等离子到第一衬底的分离层形成步骤从而形成分离层，将第一基板和第二基板彼此接合以使表面层部分可以位于内部的粘合步骤，从而形成多层结构，并且转移步骤将分离层通过利用分离层的多层结构，从而将表层部分的缺陷层转移到第二基板上。较少缺陷层是单晶硅层，其中诸如COP和FPD的体晶片中固有的缺陷降低。

10. 发明授权

US06171512B2 Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution 失效
公开(公告)号：US06171512B2
公开(公告)日：2001-01-09
申请号：US08472270
申请日：1995-06-07
申请人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
发明人： Kiyofumi Sakaguchi , Takao Yonehara , Nobuhiko Sato
IPC分类号： B31D300
CPC分类号： H01L21/76256 , H01L21/0203 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/76251
摘要： A method for preparing a semiconductor member comprises: forming a substrate having a non-porous silicon monocrystalline layer and a porous silicon layer; bonding another substrate having a surface made of an insulating material to the surface of the monocrystalline layer; and etching to remove the porous silicon layer by immersing in an etching solution.

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