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    • 62. 发明授权
    • Internal structure of nuclear reactor with coolant flow stabilizing facility
    • 具有冷却剂流动稳定设施的核反应堆内部结构
    • US06445758B1
    • 2002-09-03
    • US09416933
    • 1999-10-13
    • Hajime IzumiMakoto NakajimaChikara KurimuraTakehiko TsutsuiNoboru KuboMikio KuriharaToshio Ichikawa
    • Hajime IzumiMakoto NakajimaChikara KurimuraTakehiko TsutsuiNoboru KuboMikio KuriharaToshio Ichikawa
    • G21C1502
    • G21C15/14G21Y2002/204G21Y2004/302Y02E30/32
    • Within an upper plenum of a nuclear reactor, a portion of a heated coolant flows radially outward from a central portion of a core barrel (30) towards outlet nozzles (12) in a region of an upper core plate (21) extending outside of an outer periphery of the core along an inner wall of a core barrel (30). Portions of the coolant flows beneath the outlet nozzles (12). Thus, streams of heated coolant flowing in opposite directions may collide with each other. After collision, the flow directions of the heated coolant are changed to flow upward. Due to the collision, the coolant flow behavior becomes complicated and unstable, making it difficult to measure the temperature of the heated coolant with an outlet pipe (42) connected to the outlet nozzle (12). Within an upper plenum (40) defined above a fuel region through which a coolant flows and which is hydraulically communicated with a plurality of outlet nozzles (12) mounted on a side wall of a nuclear reactor vessel (10), short flow stabilizing members (1) each being lower than the outlet nozzle (12) are disposed in the vicinity of a core barrel (30) in an region outside of the fuel region.
    • 在核反应堆的上部增压室内,加热的冷却剂的一部分从芯筒(30)的中心部分向着出口喷嘴(12)径向向外流动,在上芯板(21) 芯沿着芯筒(30)的内​​壁的外周。 冷却剂的一部分流过出口喷嘴(12)。 因此,沿相反方向流动的加热的冷却剂流可能彼此碰撞。 在碰撞之后,加热的冷却剂的流动方向被改变以向上流动。 由于碰撞,冷却剂流动行为变得复杂和不稳定,使得难以用连接到出口喷嘴(12)的出口管(42)来测量加热的冷却剂的温度。 在位于冷却剂流过的燃料区域上方并且与安装在核反应堆容器(10)的侧壁上的多个出口喷嘴(12)液压连通的燃料区域上方的上部空气室(40)内,短流动稳定构件 每个低于出口喷嘴(12)的喷嘴(1)设置在燃料区域外侧的区域中的芯筒(30)附近。
    • 63. 发明授权
    • Process for forming contact through holes
    • 用于形成接触孔的方法
    • US4354897A
    • 1982-10-19
    • US234194
    • 1981-02-13
    • Makoto Nakajima
    • Makoto Nakajima
    • H01L21/3205G03F7/40H01L21/28H01L21/311H01L21/768B44C1/22H01L21/306
    • H01L21/31144G03F7/40H01L21/31116H01L21/76804
    • A process for forming a contact through-hole in an insulating layer lying between multilayer conductors comprises the steps of: forming a photoresist layer on the insulating layer with an aperture therein exposing, and defining, the position of a through-hole to be found in the insulating layer; wet-etching the insulating layer in the portion exposed by the aperture to form a preceding hole; heating the photoresist layer to bend the end portion of the photoresist layer into the preceding hole but to a limited extent such that the end portion does not come into contact with sloped side wall of the preceding hole; and dry-etching the insulating layer to complete the etching of the contact through-hole while maintaining the desired, sloped sidewall thereof, thereby preventing cracks from occurring in the upper one of the multilayer conductors in the portions thereof which extend through the through-hole.
    • 在位于多层导体之间的绝缘层中形成接触通孔的方法包括以下步骤:在绝缘层上形成光致抗蚀剂层,其中孔内露出并限定待发现的通孔的位置 绝缘层; 在由孔径暴露的部分中湿式蚀刻绝缘层以形成前一孔; 加热光致抗蚀剂层以将光致抗蚀剂层的端部弯曲成前一孔,但是在有限的程度上使得端部不与前一孔的倾斜侧壁接触; 并且干法蚀刻绝缘层,以完成对接触通孔的蚀刻,同时保持其期望的倾斜侧壁,从而防止在其中的上部多层导体中的其中延伸穿过通孔的部分产生裂纹 。
    • 69. 发明申请
    • SILICON-CONTAINING COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM, WHICH CONTAINS ORGANIC GROUP CONTAINING PROTECTED ALIPHATIC ALCOHOL
    • 用于形成耐下层膜的含硅组合物,其中含有保护的脂肪醇的有机基团
    • US20130183830A1
    • 2013-07-18
    • US13825158
    • 2011-09-14
    • Satoshi TakedaMakoto NakajimaYuta Kanno
    • Satoshi TakedaMakoto NakajimaYuta Kanno
    • H01L21/033
    • H01L21/0332C08G77/14C08G77/16C09D183/04G03F7/0752G03F7/091G03F7/094
    • Described herein are compositions for forming an underlayer film for a solvent-developable resist. These compositions can include a hydrolyzable organosilane having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof and a solvent. The composition can form a resist underlayer film including, a hydrolyzable organosilane, a hydrolysate of the hydrolyzable organosilane, a hydrolysis-condensation product of the hydrolyzable organosilane, or a combination thereof, the silicon atom in the silane compound having a silicon atom bonded to an organic group containing a protected aliphatic alcohol group in a ratio of 0.1 to 40% by mol based on the total amount of silicon atoms. Also described is a method for applying the composition onto a semiconductor substrate and baking the composition to form a resist underlayer film.
    • 本文描述了用于形成用于溶剂可显影抗蚀剂的下层膜的组合物。 这些组合物可以包括具有与含有保护的脂族醇基的有机基团键合的硅原子的水解性有机硅烷,可水解的有机硅烷的水解产物,可水解的有机硅烷的水解缩合产物,或其组合和溶剂。 该组合物可以形成抗蚀剂下层膜,该抗蚀剂下层膜包括可水解的有机硅烷,可水解的有机硅烷的水解产物,可水解的有机硅烷的水解缩合产物或其组合,硅烷化合物中硅原子与硅原子键合的硅原子 相对于硅原子总量,含有保护的脂族醇基的有机基团的比例为0.1〜40摩尔%。 还描述了将组合物施加到半导体衬底上并烘烤该组合物以形成抗蚀剂下层膜的方法。