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    • 67. 发明申请
    • Semiconductor laser array with a lattice structure
    • 具有晶格结构的半导体激光阵列
    • US20050129084A1
    • 2005-06-16
    • US10734104
    • 2003-12-11
    • Martin KampMartin Muller
    • Martin KampMartin Muller
    • H01S5/12H01S5/22H01S5/40H01S5/00H01S3/08
    • H01S5/12H01S5/1237H01S5/22H01S5/4031
    • The present invention relates to laser diodes with single mode emission at high output powers, as well as to structures and processes facilitating simple manufacture of such a devices. The invention includes a semiconductor laser (10) with a semiconductor substrate (11), a laser layer (13) arranged on the semiconductor substrate, an array of waveguide ridges (18) arranged at a distance from the laser layer, and several strip-shaped lattice structures (23) arranged on the flat surface between the waveguide ridges. The lattice structure (23) is formed on an insulating or barrier layer (26) at a distance from the laser layer above the laser layer (13). Processes for the production of such a semiconductor laser are also disclosed.
    • 本发明涉及在高输出功率下具有单模发射的激光二极管,以及促进简单制造这种器件的结构和工艺。 本发明包括具有半导体衬底(11)的半导体激光器(10),布置在半导体衬底上的激光层(13),与激光层一定距离设置的一组波导脊(18) (23),布置在波导脊之间的平坦表面上。 晶格结构(23)形成在与激光层(13)上方的激光层相距一定距离的绝缘或阻挡层(26)上。 还公开了用于制造这种半导体激光器的工艺。