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    • 61. 发明申请
    • Shift control apparatus for automatic transmission
    • 用于自动变速器的换档控制装置
    • US20070099751A1
    • 2007-05-03
    • US11584551
    • 2006-10-23
    • Hiroshi TerayamaKoichi HasegawaYoshiyuki Kokubo
    • Hiroshi TerayamaKoichi HasegawaYoshiyuki Kokubo
    • B60W10/04
    • F16H59/08F16H61/16F16H2059/0243Y10T74/1926Y10T477/60Y10T477/65
    • A shift control apparatus for an automatic transmission having an automatic shift mode for performing a shift operation by determining a gear ratio to be set according to a vehicle running condition and a manual shift mode for performing a shift operation instructed by a manual operation by an operator. The shift control apparatus includes a vehicle speed comparing unit for comparing a vehicle speed at the time of inputting a first manual shift command for downshift to a predetermined gear ratio in the manual shift mode and a vehicle speed at the time of inputting a second manual shift command for downshift during a first shift control period from the time of inputting the first manual shift command to the time of completing first shift control according to the first manual shift command, and a successive shift allowing unit for allowing the downshift by the second manual shift command when the vehicle speed comparing unit has determined that the vehicle speed at the time of inputting the second manual shift command is lower than the vehicle speed at the time of inputting the first manual shift command.
    • 一种用于自动变速器的变速控制装置,具有通过根据车辆行驶状态确定要设定的变速比进行换档操作的自动变速模式和用于执行由操作者进行的手动操作指示的换档操作的手动变速模式 。 变速控制装置包括车速比较单元,用于将输入用于降档的第一手动换档指令时的车速与手动换档模式中的预定齿轮比进行比较,以及输入第二手动换档时的车速 在从第一手动变速指令输入时开始的第一变速控制期间按照第一手动变速指令进行第一变速控制的时刻的降档指令,以及连续变速允许单元,通过第二手动变速 当车速比较单元已经确定输入第二手动换档指令时的车速低于输入第一手动换档指令时的车速时,指令。
    • 62. 发明申请
    • Fluid filled vibration damping device
    • 流体填充减震装置
    • US20060066016A1
    • 2006-03-30
    • US11236762
    • 2005-09-28
    • Koichi HasegawaNoriaki Yoshii
    • Koichi HasegawaNoriaki Yoshii
    • F16F13/00
    • F16F13/106
    • A fluid filled vibration damping device wherein a first and second mounting member are connected by a main rubber elastic body, a pressure receiving chamber partially formed by the rubber elastic body and an equilibrium chamber partially formed by a flexible film are formed on either side of a partition member supported by the second mounting member, an orifice passage is formed for permitting a fluid communication between the pressure receiving chamber and equilibrium chamber communicate both having a non-compressible fluid; and a movable rubber plate is housed in a housing space so that minute pressure fluctuations in the pressure receiving chamber can be absorbed by the equilibrium chamber by means of the movable rubber plate. The movable rubber plate includes at least partially a corrugated part expanding generally a form of a corrugated panel by means of continuous depressions and protrusions.
    • 一种流体填充减振装置,其中第一和第二安装构件通过主橡胶弹性体连接,由橡胶弹性体部分地形成的受压室和由柔性膜部分形成的平衡室形成在 分隔构件由第二安装构件支撑,形成孔口通道,用于允许压力接收室和平衡室之间的流体连通两者具有不可压缩流体; 并且可动橡胶板容纳在容纳空间中,使得受压室中的微小压力波动可以通过可移动橡胶板被平衡室吸收。 可移动橡胶板至少部分地包括通过连续的凹陷和突起而大体上形成波纹板的波形部分。
    • 65. 发明授权
    • Epitaxial wafer for GaP pure green light-emitting diode and GaP pure
green light-emitting diode
    • GaP纯绿色发光二极管和GaP纯绿色发光二极管的外延晶片
    • US5886369A
    • 1999-03-23
    • US965192
    • 1997-11-06
    • Koichi HasegawaKoichiro Takahashi
    • Koichi HasegawaKoichiro Takahashi
    • H01L21/208H01L33/30H01L33/40H01L27/15
    • H01L33/30H01L33/0062H01L33/025
    • An epitaxial wafer for a GaP pure green light emitting diode includes an n-type single crystal GaP substrate formed in order thereon with a first n-type GaP epitaxial layer, a second n-type GaP epitaxial layer and a p-type GaP epitaxial layer. The p-type GaP epitaxial layer has a sulfur concentration of not greater than 1.times.10.sup.17 cm.sup.31 3, the second n-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the p-type GaP epitaxial layer of 0.5-5.times.10.sup.17 cm.sup.-3, and the p-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the second n-type GaP epitaxial layer that is 1-10.times.10.sup.17 cm.sup.-3 and is not less than twice the carrier concentration of the second n-type GaP epitaxial layer on the side thereof interfacing with the p-type GaP epitaxial layer. A GaP pure green light-emitting diode exhibiting high brightness includes the epitaxial wafer, an n-type electrode provided on a back surface of the single crystal substrate and a p-type electrode provided on the upper surface of the p-type GaP epitaxial layer.
    • 用于GaP纯绿色发光二极管的外延晶片包括依次形成有第一n型GaP外延层,第二n型GaP外延层和p型GaP外延层的n型单晶GaP衬底 。 p型GaP外延层的硫浓度不大于1×10 17 cm -3 3 3,第二n型GaP外延层在其与p型GaP外延层接合的一侧上具有0.5-5×10 17 cm -1的GaP外延层, 3,并且p型GaP外延层在其与第二n型GaP外延层接合的一侧上的载流子浓度为1-10×10 17 cm -3,并且不小于第二n-型GaP外延层的载流子浓度的两倍, GaP外延层与p型GaP外延层接合。 显示高亮度的GaP纯绿色发光二极管包括外延晶片,设置在单晶衬底的背面上的n型电极和设置在p型GaP外延层的上表面上的p型电极 。
    • 66. 发明授权
    • Semiconductor integrated delay circuit
    • 半导体集成延迟电路
    • US5448195A
    • 1995-09-05
    • US79758
    • 1993-06-22
    • Tetsuya IgaKoichi Hasegawa
    • Tetsuya IgaKoichi Hasegawa
    • H03K5/13
    • H03K5/133
    • A semiconductor integrated circuit having a plurality of power source voltages in one chip and which comprises delaying means which accurately implements a predetermined delay time into a signal. An inverter circuit block receives at its input part an output from a NAND gate. An output from the inverter circuit block is coupled to a node of a phase comparing part through a switch. The output from the inverter circuit block is also coupled through another switch to an input part of another inverter circuit block whose output is coupled to the node of the phase comparing part through still another switch. A control signal is set at a L level if the phase comparing part is to operate at a first power source voltage and set at a H level if the phase comparing part is to operate at a second power source voltage which is larger than the first power source voltage.
    • 一种半导体集成电路,其具有一个芯片中的多个电源电压,并且包括将信号精确地实现预定的延迟时间的延迟装置。 逆变器电路块在其输入部分接收来自“与非”门的输出。 来自逆变器电路块的输出通过开关耦合到相位比较部分的节点。 来自逆变器电路块的输出还通过另一个开关耦合到另一个反相器电路块的输入部分,其输出通过另一个开关耦合到相位比较部分的节点。 如果相位比较部分工作在第一电源电压并且如果相位比较部分要在大于第一电源的第二电源电压下工作,则将控制信号设置为L电平 源电压。
    • 67. 发明授权
    • Semiconductor integrated circuit device
    • 半导体集成电路器件
    • US5313085A
    • 1994-05-17
    • US894299
    • 1992-06-04
    • Koichi Hasegawa
    • Koichi Hasegawa
    • H01L21/66H01L21/822H01L21/8249H01L27/04H01L27/06H03K17/00H03K17/567H03K17/693H01L27/02H03K3/01
    • H03K17/567H03K17/693H01L2224/05554H01L2224/49113H01L2924/1305H03K2217/0036
    • A voltage reduction circuit is electrically inserted between between a first power supply pad and a power source voltage supplying portion of a bipolar circuit part. Receiving a control signal from a CMOS circuit part, the voltage reduction circuit reduces a power source voltage given thereto via the power supply pad, thereby producing a reduced power source voltage and outputting the reduced power source voltage to the power source voltage supplying portion of the bipolar circuit part. Hence, even though the same power source voltage is commonly supplied to the power supply pads of the bipolar circuit part and the CMOS circuit part via the same external power source pin, one of the bipolar circuit part and the CMOS circuit part receives the reduced power source voltage from the voltage reduction circuit. Thus, it is possible that a power source voltage to the CMOS circuit part and a power source voltage to the bipolar circuit part are different without increasing the number of external power source pins.
    • 电压降低电路被电插入在第一电源焊盘和双极电路部分的电源电压供应部分之间。 接收来自CMOS电路部分的控制信号,电压降低电路通过电源焊盘减少给予的电源电压,从而产生降低的电源电压,并将降低的电源电压输出到电源电压供应部分 双极电路部分。 因此,即使通过相同的外部电源引脚将相同的电源电压通常提供给双极电路部分的电源焊盘和CMOS电路部分,双极电路部分和CMOS电路部分之一接收降低的功率 来自电压降低电路的源极电压。 因此,不增加外部电源引脚的数量,可能到CMOS电路部分的电源电压和双极电路部分的电源电压是不同的。