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61. 发明申请

US20120091544A1 COMPONENT HAVING A MICROMECHANICAL MICROPHONE STRUCTURE, AND METHOD FOR ITS PRODUCTION 有权
标题翻译：具有微机电麦克风结构的组分及其生产方法
公开(公告)号：US20120091544A1
公开(公告)日：2012-04-19
申请号：US13259570
申请日：2010-04-07
申请人： Frank Reichenbach , Thomas Buck , Jochen Zoellin , Franz Laermer , Ulrike Scholz , Kathrin van Teeffelen , Christina Leinenbach
发明人： Frank Reichenbach , Thomas Buck , Jochen Zoellin , Franz Laermer , Ulrike Scholz , Kathrin van Teeffelen , Christina Leinenbach
IPC分类号： H01L29/84 , H01L21/02
CPC分类号： H04R19/005 , Y10T428/31663
摘要： A component having a robust, but acoustically sensitive microphone structure is provided and a simple and cost-effective method for its production. This microphone structure includes an acoustically active diaphragm, which functions as deflectable electrode of a microphone capacitor, a stationary, acoustically permeable counter element, which functions as counter electrode of the microphone capacitor, and an arrangement for detecting and analyzing the capacitance changes of the microphone capacitor. The diaphragm is realized in a diaphragm layer above the semiconductor substrate of the component and covers a sound opening in the substrate rear. The counter element is developed in a further layer above the diaphragm. This further layer generally extends across the entire component surface and compensates level differences, so that the entire component surface is largely planar according to this additional layer. This allows a foil to be applied on the layer configuration of the microphone structures exposed in the wafer composite, which makes it possible to dice up the components in a standard sawing process.
摘要翻译：提供具有坚固但声学敏感的麦克风结构的部件，并且是用于其生产的简单且成本有效的方法。这种麦克风结构包括一个声学活动的隔膜，它起着麦克风电容器的可偏转电极的作用，一个固定的，声学可渗透的计数元件，起着麦克风电容器的对电极的作用，以及用于检测和分析麦克风的电容变化的装置电容器。膜片在元件的半导体衬底上方的隔膜层中实现，并覆盖衬底后部的声音开口。计数元件在膜片上方的另一层中显影。该另一层通常跨越整个组件表面延伸并补偿水平差，使得根据该附加层，整个组件表面大部分是平面的。这允许将箔施加在暴露在晶片复合材料中的麦克风结构的层结构上，这使得可以在标准锯切工艺中引导部件。

62. 发明申请

US20110281102A1 METHOD FOR MANUFACTURING POROUS MICROSTRUCTURES, POROUS MICROSTRUCTURES MANUFACTURED ACCORDING TO THIS METHOD, AND THE USE THEREOF 失效
标题翻译：用于制造多孔微结构的方法，根据该方法制造的多孔微结构及其使用
公开(公告)号：US20110281102A1
公开(公告)日：2011-11-17
申请号：US12810973
申请日：2008-11-19
申请人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
发明人： Dick Scholten , Tjalf Pirk , Michael Stumber , Franz Laermer , Ralf Reichenbach , Ando Feyh
IPC分类号： B32B3/26 , C23F1/04
CPC分类号： A61K9/0019 , A61B5/02755 , A61K9/0024 , A61K9/2009 , A61K31/337 , A61M37/0015 , A61M2037/0023 , A61M2037/0053 , B81B2201/055 , B81C1/00126 , B81C2201/0115 , Y10T428/249978
摘要： A method for manufacturing porous microstructures in a silicon semiconductor substrate, porous microstructures manufactured according to this method, and the use thereof.
摘要翻译：一种用于制造硅半导体衬底中的多孔微结构的方法，根据该方法制造的多孔微结构及其用途。

63. 发明授权

US07872333B2 Layer system comprising a silicon layer and a passivation layer, method for production a passivation layer on a silicon layer and the use of said system and method 有权
标题翻译：包括硅层和钝化层的层系统，在硅层上制造钝化层的方法以及所述系统和方法的使用
公开(公告)号：US07872333B2
公开(公告)日：2011-01-18
申请号：US10524610
申请日：2003-05-06
申请人： Franz Laermer , Lutz Mueller , Winfried Bernhard
发明人： Franz Laermer , Lutz Mueller , Winfried Bernhard
IPC分类号： H01L23/58 , H01L21/70 , H01L29/06
CPC分类号： H01L21/02252 , B81B2203/033 , B81C1/00571 , B81C2201/016 , H01L21/02123 , H01L21/02238 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3121 , H01L21/31612 , Y10S438/958
摘要： A layer system is described including a silicon layer and a passivation layer which is applied at least regionally to the silicon layer's surface, the passivation layer having a first, at least largely inorganic partial layer and a second partial layer, the second partial layer being made of an organic compound including silicon or containing such a material. In particular, the second partial layer is structured in the form of a “self-assembled monolayer.” Furthermore, a method is described for creating a passivation layer on a silicon layer, a first, inorganic partial layer being created on the silicon layer and a second partial layer, containing an organic compound including silicon or being made thereof, being created at least in certain areas on the first partial layer. Both partial layers form the passivation layer. The described layer system or the described method is particularly suited for creating self-supporting structures in silicon.
摘要翻译：描述了一种层系统，其包括至少区域地施加到硅层表面的硅层和钝化层，钝化层具有第一至少大部分无机部分层和第二部分层，第二部分层被制成包含硅或含有这种材料的有机化合物。特别地，第二部分层以“自组装单层”的形式构成。此外，描述了一种在硅层上形成钝化层的方法，在硅层上形成第一无机部分层，以及至少在第一部分层上的某些区域中产生含有包含硅或由其制成的有机化合物的第二部分层。两个部分层形成钝化层。所描述的层系统或所描述的方法特别适用于在硅中产生自支撑结构。

64. 发明申请

US20100035068A1 Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type 失效
标题翻译：具有改性表面性质的硅衬底的制造方法和所述类型的硅衬底
公开(公告)号：US20100035068A1
公开(公告)日：2010-02-11
申请号：US12308200
申请日：2007-04-27
申请人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
发明人： Gerhard Lammel , Hubert Benzel , Matthias Illing , Franz Laermer , Silvia Kronmueller , Paul Farber , Simon Armbruster , Ralf Reichenbach , Christoph Schelling , Ando Feyh
IPC分类号： C25D5/00 , B32B17/06 , H01L21/30
CPC分类号： H01L21/02008 , H01L21/02381 , H01L21/02529 , H01L21/02573 , H01L21/02601 , H01L21/02612 , H01L21/02656 , H01L21/02658 , H01L21/02667 , H01L33/346
摘要： A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000° C. and ca. 1400° C., in order to close the generated pores again and to enclose the filling material.
摘要翻译：一种制造硅衬底的方法，包括以下步骤：提供具有基本平坦的硅表面的硅衬底，产生具有多个孔的多孔硅表面，特别是具有大孔和/或介孔和/或纳米孔，要插入硅的材料，其直径小于孔的直径，如果需要，将填充材料插入孔中并除去多余的填充材料形成硅表面，并回火硅衬底配备有已经填充到孔中的填充材料，温度约为 1000℃和约 1400℃，以便再次闭合所产生的孔并包围填充材料。

65. 发明申请

US20100009077A1 Method for Treating a Material Having Nanoscale Pores 审中-公开
标题翻译：用于处理具有纳米级孔的材料的方法
公开(公告)号：US20100009077A1
公开(公告)日：2010-01-14
申请号：US12225504
申请日：2007-02-12
申请人： Franz Laermer , Michael Stumber , Ralf Reichenbach , Dick Scholten , Christian Maeurer
发明人： Franz Laermer , Michael Stumber , Ralf Reichenbach , Dick Scholten , Christian Maeurer
IPC分类号： B05D7/22 , B05C9/08
CPC分类号： B08B7/0021
摘要： A method and a device for treating a material having nanoscale pores), especially implant material for the treatment of living cells, as provided. The method distinguished in that the surface tension of a substance (10) provided for filling the volumes of the nanoscale pores (9) is reduced. The present invention also includes a device for carrying out this method.
摘要翻译：一种用于处理具有纳米尺度孔的材料的方法和装置），特别是用于治疗活细胞的植入材料。该方法的特征在于减少了用于填充纳米级孔（9）的体积的物质（10）的表面张力。本发明还包括用于执行该方法的装置。

66. 发明申请

US20090278214A1 Microelectromechanical Systems Encapsulation Process 有权
标题翻译：微机电系统封装工艺
公开(公告)号：US20090278214A1
公开(公告)日：2009-11-12
申请号：US12506219
申请日：2009-07-20
申请人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
发明人： Markus Ulm , Brian Stark , Matthias Metz , Tino Fuchs , Franz Laermer , Silvia Kronmueller
IPC分类号： H01L29/84
CPC分类号： B81C1/0096 , B81B3/0005
摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要翻译：描述了一种封装的MEMS工艺，其包括在高于450℃的温度下在加工步骤下稳定的高温抗静电涂层。涂层在器件释放后，但在封装层封口之前应用。或者，可以在封装之前将抗静电涂层直接施加到释放的装置。

67. 发明申请

US20080167601A1 Microneedles to be placed in the skin for the transdermal application of pharhmaceuticals 有权
标题翻译：将微针放置在皮肤中以透皮施用药物
公开(公告)号：US20080167601A1
公开(公告)日：2008-07-10
申请号：US11897299
申请日：2007-08-29
申请人： Franz Laermer , Michael Stumber , Dick Scholten , Christian Maeurer
发明人： Franz Laermer , Michael Stumber , Dick Scholten , Christian Maeurer
IPC分类号： A61B17/20 , B81C1/00
CPC分类号： A61B17/205 , A61B2090/037 , A61M37/0015 , A61M2037/003 , A61M2037/0046 , A61M2037/0053
摘要： An array for placement on the skin of a human or animal patient for the purpose of the transdermal application of pharmaceuticals, toxins or active agents, having microneedles that are situated on a carrier substrate, the microneedles having a preset breaking point in the area of the transition to the carrier substrate.
摘要翻译：用于放置在人或动物患者的皮肤上的阵列，用于透皮施用具有位于载体基底上的微针的药物，毒素或活性剂的目的，微针在该区域中具有预设的断点过渡到载体基底。

68. 发明授权

US07321156B2 Device for capacitive pressure measurement and method for manufacturing a capacitive pressure measuring device 失效
标题翻译：电容式压力测量装置及制造电容式压力测量装置的方法
公开(公告)号：US07321156B2
公开(公告)日：2008-01-22
申请号：US10897449
申请日：2004-07-22
申请人： Frank Fischer , Hans-Peter Trah , Franz Laermer , Lars Metzger
发明人： Frank Fischer , Hans-Peter Trah , Franz Laermer , Lars Metzger
IPC分类号： H01L29/82
CPC分类号： G01L9/0073
摘要： A device for manufacturing a capacitive pressure measurement includes an insulated base electrode, a mechanically deflectable counterelectrode composed of a layer made of at least one of a monocrystalline and polycrystalline semiconductor material, a contact arrangement for electrically connecting the electrodes, and at least one semiconductor component, all integrated onto a semiconductor substrate. The connection for the base electrode is formed by an electrically insulated conductive polycrystalline semiconductor layer. The method for manufactured the device includes the step of arranging a conductive polycrystalline semiconductor layer between two insulating layers on the semiconductor substrate for forming a base electrode.
摘要翻译：用于制造电容式压力测量的装置包括绝缘基极，由由单晶和多晶半导体材料中的至少一种构成的层，用于电连接电极的接触装置和至少一个半导体元件，全部集成到半导体衬底上。用于基极的连接由电绝缘的导电多晶半导体层形成。制造该器件的方法包括在用于形成基极的半导体衬底上的两个绝缘层之间布置导电多晶半导体层的步骤。

69. 发明授权

US07312553B2 Micromechanical component and method for producing same 有权
标题翻译：微机械部件及其制造方法
公开(公告)号：US07312553B2
公开(公告)日：2007-12-25
申请号：US10492896
申请日：2002-09-05
申请人： Franz Laermer
发明人： Franz Laermer
IPC分类号： H01L41/08
CPC分类号： G01C19/5712 , B81B3/0086 , B81B2201/0242 , B81B2203/0136 , B81B2203/033 , B81C1/00801 , B81C2201/0104 , B81C2201/016
摘要： A micromechanical component and a method for producing the component are provided. The micromechanical component includes a substrate and a micromechanical functional layer of a first material provided over the substrate. The functional layer has a first and second regions, which are connected by a third region of a second material, and at least one of the regions is part of a movable structure, which is suspended over the substrate.
摘要翻译：提供微机械部件及其制造方法。微机械部件包括衬底和设置在衬底上的第一材料的微机械功能层。功能层具有通过第二材料的第三区域连接的第一和第二区域，并且至少一个区域是悬浮在基板上的可移动结构的一部分。

70. 发明授权

US06911348B1 Device and method for determining the lateral undercut of a structured surface layer 失效
标题翻译：用于确定结构化表面层的横向底切的装置和方法
公开(公告)号：US06911348B1
公开(公告)日：2005-06-28
申请号：US09674984
申请日：2000-03-13
申请人： Volker Becker , Franz Laermer , Andrea Schilp
发明人： Volker Becker , Franz Laermer , Andrea Schilp
IPC分类号： B81C99/00 , H01L21/02 , H01L21/66 , H01L21/00
CPC分类号： H01L28/10 , B81C99/004 , H01L22/12
摘要： A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.
摘要翻译：用于确定牺牲层上的结构化表面层的至少局部侧向底切的程度的装置和方法。用于此目的的结构化表面层在本地具有至少一个无源电子部件，利用该被动电子部件可以确定与外侧底切的程度成比例的物理测量量。用于产生该装置的方法首先在第一蚀刻方法中在结构化表面层上提出至少局部地提供具有沟槽的结构的表面层，并且以第二蚀刻方法从沟槽进行至少承受局部地是结构化表面层的横向底切。在本文中，在表面层上的第一蚀刻方法中，局部地附加地描绘了至少一个无源电子部件，其响应于表面层的随后的底切也被切削。物理测量的数量是在不接触的情况下确定的，优选地通过向无源部件发送电磁辐射。

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