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    • 62. 发明授权
    • Magnetoresistive-effect device with a magnetic coupling junction
    • 具有磁耦合结的磁阻效应器件
    • US06587315B1
    • 2003-07-01
    • US09487691
    • 2000-01-19
    • Daigo AokiNaoya HasegawaKenji HondaKiyoshi SatoYoshihiko Kakihara
    • Daigo AokiNaoya HasegawaKenji HondaKiyoshi SatoYoshihiko Kakihara
    • G11B539
    • H01L43/08B82Y10/00B82Y25/00G11B5/3903G11B2005/3996H01L43/12Y10T29/49044
    • A magnetoresistive-effect device includes a multilayer film, hard bias layers arranged on both sides of the multilayer film, and electrode layers respectively deposited on the hard bias layers. The electrode layers are formed, extending over the multilayer film. Under the influence of the hard bias layers arranged on both sides of the multilayer, the multilayer film, forming the magnetoresistive-effect device, has, on the end portions thereof, insensitive regions which exhibit no substantial magnetoresistive effect. The insensitive region merely increases a direct current resistance. By extending the electrode layers over the insensitive regions of the multilayer film, a sense current is effectively flown from the electrode layer into the multilayer film. With a junction area between the electrode layer and the multilayer film increased, the direct current resistance is reduced, while the reproduction characteristics of the device are thus improved.
    • 磁阻效应器件包括多层膜,布置在多层膜两侧的硬偏置层以及分别沉积在硬偏压层上的电极层。 在多层膜上形成电极层。 在布置在多层的两侧的硬偏置层的影响下,形成磁阻效应器件的多层膜在其端部上具有不显着的磁阻效应的不敏感区域。 不敏感区域仅增加直流电阻。 通过将电极层延伸到多层膜的不敏感区域上,感测电流有效地从电极层流入多层膜。 在电极层和多层膜之间的接合区域增加的同时,直流电阻降低,同时改善了器件的再现特性。
    • 63. 发明授权
    • Thin-film magnetic head for track width not more than 1 &mgr;m on recording medium and method for making the same
    • 在记录介质上的轨道宽度不超过1um的薄膜磁头及其制造方法
    • US06477006B1
    • 2002-11-05
    • US09573833
    • 2000-05-18
    • Kiyoshi Sato
    • Kiyoshi Sato
    • G11B531
    • G11B5/3163G11B5/3109G11B5/3116G11B5/313Y10S977/934
    • The upper face of a lower core layer is planarized by polishing, and a lower magnetic pole layer, a gap layer, and an upper magnetic pole layer are deposited in that order on the lower core layer so that the lower core layer connects to the lower magnetic pole layer. The lower magnetic pole layer, the gap layer, and the upper magnetic pole layer are partly removed using a mask layer, and an insulating layer is deposited on the removed portion to form a main portion and an adjoining portion of a groove. A gap depth Gd is formed in the upper magnetic pole layer, and an back insulating layer is formed on the gap layer in a back region. An upper core layer is formed so as to connect to the upper magnetic pole layer and to partly cover a coil in the magnetic pole end region.
    • 通过研磨将下芯层的上表面平坦化,并且在下芯层上依次沉积下磁极层,间隙层和上磁极层,使得下芯层连接到下磁芯层 磁极层。 使用掩模层部分去除下磁极层,间隙层和上磁极层,并且在去除部分上沉积绝缘层以形成凹槽的主要部分和邻接部分。 在上磁极层中形成间隙深度Gd,并且在背部区域的间隙层上形成背面绝缘层。 形成上芯层以连接到上磁极层并部分地覆盖磁极端区域中的线圈。
    • 65. 发明授权
    • Magnetoresistive sensor and its manufacturing method
    • 磁阻传感器及其制造方法
    • US06201465B1
    • 2001-03-13
    • US09432456
    • 1999-11-02
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • H01L4300
    • B82Y25/00B82Y10/00G01R33/093G11B5/3116G11B5/3903G11B5/3932G11B2005/3996Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49052
    • A magnetoresistive sensor is fabricated as follows. First of all, first antiferromagnetic layers are created on the upper surfaces on both sides of a lower-gap layer, sandwiching a track width on the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another in the order the layers are enumerated. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
    • 如下制造磁阻传感器。 首先,在下间隙层的两侧的上表面上形成第一反铁磁性层,在下间隙层的上表面夹着轨道宽度。 然后,依次层叠第一反铁磁层上的自由磁性层,非磁性导电层,钉扎磁性层和第二反铁磁性层,并且沿轨道宽度的一部分依次层叠。 由于在第一反铁磁层之后产生自由磁性层,所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时,磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态,所以可降低Barkhausen噪声的量。
    • 67. 发明授权
    • Magnetoresistive sensor manufacturing method
    • 磁阻传感器制造方法
    • US5972420A
    • 1999-10-26
    • US918643
    • 1997-08-22
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • Masamichi SaitoToshinori WatanabeKiyoshi SatoToshihiro Kuriyama
    • G11B5/31G01R33/09G11B5/39H01L43/08B05D5/12
    • B82Y25/00B82Y10/00G01R33/093G11B5/3903G11B5/3932G11B2005/3996G11B5/3116Y10T29/49043Y10T29/49044Y10T29/49046Y10T29/49052
    • A magnetoresistive sensor fabricated by creating first antiferromagnetic layers on the upper surfaces of a lower-gap layer, the antiferromagnetic layer having first and second exposed portions separated by a track width formed by the upper surface of the lower-gap layer. Then, a free magnetic layer, a nonmagnetic electrically conductive layer, a pinned magnetic layer and a second antiferromagnetic layer are stacked on the first antiferromagnetic layers and a portion on the track width one after another. Since the free magnetic layer is created after the first antiferromagnetic layer, the free magnetic layer and the first antiferromagnetic layer are adhered to each other with a high degree of reliability. When the direction of magnetization in the free magnetic layer is changed by an external magnetic field, the electrical resistance of the magnetoresistive sensor also changes. The change in electrical resistance is, in turn, used for detecting the external magnetic field. Since the first antiferromagnetic layers put the free magnetic layer in a single-domain state in the X direction, the amount of Barkhausen noise can be reduced.
    • 通过在下间隙层的上表面上产生第一反铁磁层制造的磁阻传感器,所述反铁磁层具有由下间隙层的上表面形成的轨道宽度分开的第一和第二暴露部分。 然后,将自由磁性层,非磁性导电层,钉扎磁性层和第二反铁磁层层叠在第一反铁磁性层上,并在轨道宽度上一个接一个地堆叠。 由于在第一反铁磁层之后产生自由磁性层,所以自由磁性层和第一反铁磁性层以高可靠性彼此粘合。 当通过外部磁场改变自由磁性层中的磁化方向时,磁阻传感器的电阻也改变。 电阻的变化又用于检测外部磁场。 由于第一反铁磁性层将自由磁性层置于X方向的单畴状态,所以可降低Barkhausen噪声的量。