会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 68. 发明授权
    • Process for growing a multi-component crystal
    • 生长多组分晶体的方法
    • US4853078A
    • 1989-08-01
    • US268650
    • 1988-11-09
    • Kenji Miyazaki
    • Kenji Miyazaki
    • C30B11/00C30B11/06C30B11/12C30B29/40C30B29/48
    • C30B11/12C30B11/00C30B11/003C30B11/06C30B29/48Y10S117/906
    • A process for growing in a sealed reaction container a multi-component type crystal from the melt of a starting material consisting of more than three elements of the multi-component crystal. The sealed reaction container is divided into a reaction zone and a vapor pressure control zone which are in communication with each other through at least one opening. The starting material for the multi-component crystal is charged in the reaction zone while a vapor pressure control material consisting of more than two components of the multi-component crystal is charged in the vapor pressure control zone. The temperature in the reaction control zone is adjusted and maintained at a predetermined value to grow the crystal from the melt under a controlled vapor pressure.
    • 在密封反应容器中从由多组分晶体的三个以上元素组成的起始材料的熔体中生长多组分型晶体的方法。 将密封的反应容器分成通过至少一个开口彼此连通的反应区和蒸气压控制区。 将多组分晶体的起始材料装入反应区,同时将由多组分晶体的多于两种组分组成的蒸气压控制材料装入蒸气压控制区。 将反应控制区中的温度调节并保持在预定值,以在受控蒸气压下从熔体中生长晶体。