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    • 64. 发明申请
    • VERTICAL HEAT TREATMENT BOAT AND HEAT TREATMENT METHOD FOR SEMICONDUCTOR WAFER
    • 用于半导体波形的垂直热处理船和热处理方法
    • US20100015817A1
    • 2010-01-21
    • US12449629
    • 2008-02-28
    • Takeshi Kobayashi
    • Takeshi Kobayashi
    • H01L21/477F27D5/00
    • H01L21/67309
    • The present invention provides a vertical heat treatment boat that has at least four or more support portions per processing target substrate to be supported, the support portions horizontally supporting the processing target substrate, support auxiliary members on which the processing target substrate is mounted being detachably attached to the four or more support portions, respectively, wherein flatness obtained from all surfaces of the respective support auxiliary members on which the processing target substrate is mounted is adjusted by adjusting thicknesses of the support auxiliary members or interposing spacers between the support portions and the support auxiliary members in accordance with respective shapes of the four or more support portions. As a result, it is provided the vertical heat treatment boat and a heat treatment method for a semiconductor wafer that can readily improve flatness in support of the processing target substrate and effectively prevent occurrence of slip dislocation when performing a heat treatment to the processing target substrate such as a semiconductor wafer by using a vertical heat treatment furnace.
    • 本发明提供一种垂直热处理舟,每个加工对象基板的支撑部至少具有四个以上的支撑部,支撑部水平地支撑处理对象基板,支撑辅助部件,其上安装有处理对象基板,可拆卸地安装 分别与四个或更多个支撑部分相对应,其中通过调节在支撑部分和支撑件之间的支撑辅助构件或插入间隔件的厚度来调节从其上安装有处理目标基板的各个支撑辅助构件的所有表面获得的平坦度 辅助构件根据四个或更多个支撑部分的相应形状。 结果,提供了一种用于半导体晶片的垂直热处理舟和热处理方法,其能够容易地提高对处理对象基板的支撑的平坦性,并且能够有效地防止在对处理对象基板进行热处理时发生滑移位错 例如通过使用立式热处理炉的半导体晶片。
    • 65. 发明申请
    • Hydraulic Control Apparatus
    • 液压控制装置
    • US20090242050A1
    • 2009-10-01
    • US12086042
    • 2007-03-26
    • Takeharu MatsuzakiShigeto NakajimaTakeshi Kobayashi
    • Takeharu MatsuzakiShigeto NakajimaTakeshi Kobayashi
    • F15B13/04
    • F15B11/0413B66F9/22E02F9/2203E02F9/2225E02F9/2267F15B11/044F15B11/05F15B13/0402F15B2211/30545F15B2211/353F15B2211/40561F15B2211/47F15B2211/473F15B2211/7052Y10T137/87169
    • A hydraulic control apparatus 1 includes a switch valve 11, a valve support chamber 35, a flow control valve 12 movable within the valve support chamber 35, an on-off valve 13 movable within the communication path chamber 12a, and a valve control device 14. The flow control valve 12 has a communication path chamber 12a and a back pressure chamber 12d. The on-off valve 13 is capable of opening and shutting off a communication path X between a cylinder line 32 and a switch valve line 33. A restrictor is formed between the flow control valve 12 and a wall defining the valve support chamber 35. The restrictor connects the cylinder line 32 and the communication path chamber 12a to each other. The opening degree of the restrictor is changed in correspondence with movement of the flow control valve 12. When the switch valve 11 is located at the neutral position or the supply position, the valve control device 14 applies a fluid pressure in the cylinder line 32 to the back pressure chamber 12d for urging the on-off valve 13 in a direction for shutting off the communication path 12a. When the switch valve 11 is located at the drainage position, the valve control device 14 applies a pilot pressure lower than the fluid pressure in the cylinder line 32 to the back pressure chamber 12d, thereby moving the on-off valve 13 in a direction for opening the communication path X.
    • 液压控制装置1包括开关阀11,阀支撑室35,可在阀支撑室35内移动的流量控制阀12,可在连通路径室12a内移动的开关阀13以及阀控制装置14 流量控制阀12具有连通路径室12a和背压室12d。 开关阀13能够打开和关闭气缸管线32和切换阀线路33之间的连通路径X.在流量控制阀12和限定阀支撑室35的壁之间形成限流器。 限流器将气缸管线32和连通路径室12a彼此连接。 限制器的开度根据流量控制阀12的移动而改变。当开关阀11位于中立位置或供给位置时,阀控制装置14将气缸管线32中的流体压力施加到 用于在断开连通路径12a的方向上推压开关阀13的背压室12d。 当切换阀11位于排水位置时,阀控制装置14将低于气缸管线32中的流体压力的先导压力施加到背压室12d,从而沿开关阀13向 打开通信路径X.
    • 69. 发明申请
    • Information recording apparatus
    • 信息记录装置
    • US20070248312A1
    • 2007-10-25
    • US11730638
    • 2007-04-03
    • Takeshi Kobayashi
    • Takeshi Kobayashi
    • H04N5/93
    • H04N5/765G11B27/032G11B27/36G11B2220/90H04N5/77H04N5/772H04N5/781H04N5/85H04N9/8042
    • An information recording apparatus has several function units that perform: storing a time when dubbing is started, halting the dubbing temporarily when that the connecting cable is disconnected, and storing a dubbing time and the picture and audio data for a predetermined time period when the dubbing process is halted temporarily as temporary halt picture and audio information; and when the cable is reconnected, calculating a disconnection time of the cable, rewinding magnetic tape to a predetermined time period ahead of a presumed temporary halt position based on the disconnection time, reproducing the magnetic tape, determining whether a data pattern of the reproduced picture and audio data matches a data pattern of the temporary halt picture and audio information; and if they match, restarting the dubbing process from a position on the magnetic tape corresponding to final recording of the temporary halt picture and audio information.
    • 信息记录装置具有多个功能单元,其执行:存储复制开始的时间,当连接电缆断开时临时停止复制,并且在配音时存储转录时间和图像和音频数据达预定时间段 暂时停止进程临时停止图片和音频信息; 并且当电缆被重新连接时,计算电缆的断开时间,基于断开时间将磁带重绕到基于断开时间的推测临时停止位置之前的预定时间段,再现磁带,确定再现图像的数据模式 并且音频数据与临时停止画面和音频信息的数据模式相匹配; 并且如果它们相匹配,则对应于临时停止图像和音频信息的最终记录的磁带上的位置重新启动复制处理。
    • 70. 发明授权
    • Method for manufacturing SOI wafer
    • 制造SOI晶圆的方法
    • US07276427B2
    • 2007-10-02
    • US10537092
    • 2003-12-01
    • Masashi IchikawaTakeshi KobayashiMiho Iwabuchi
    • Masashi IchikawaTakeshi KobayashiMiho Iwabuchi
    • H01L21/30
    • H01L21/76254H01L21/02043
    • The present invention provides a manufacturing method for an SOI wafer with a high productivity in which generation of a void is suppressed in manufacturing the SOI wafer. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an insulating layer is formed on at least one of the two starting wafers and the one wafer is adhered to the other wafer without using an adhesive agent, the starting wafers each with no line defect on a surface thereof are used. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an insulating layer is formed on at least one of the two starting wafers and the one wafer is adhered to the other wafer without using an adhesive agent, the starting wafers are subjected to a high temperature heat treatment in advance.
    • 本发明提供一种SOI晶片的制造方法,该SOI晶片在制造SOI晶片时能够抑制空穴的产生。 在本发明的SOI晶片的制造方法中,准备两个起始晶片,在两个起始晶片中的至少一个上形成绝缘层,并且一个晶片不使用粘合剂粘附到另一个晶片上, 使用其表面上没有线缺陷的起始晶片。 在本发明的SOI晶片的制造方法中,准备两个起始晶片,在两个起始晶片中的至少一个上形成绝缘层,并且一个晶片不使用粘合剂粘附到另一个晶片上, 预先对起始晶片进行高温热处理。