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61. 发明授权

US08298628B2 Low temperature deposition of silicon-containing films 有权
标题翻译：含硅薄膜的低温沉积
公开(公告)号：US08298628B2
公开(公告)日：2012-10-30
申请号：US12476734
申请日：2009-06-02
申请人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
发明人： Liu Yang , Xinjian Lei , Bing Han , Manchao Xiao , Eugene Joseph Karwacki, Jr. , Kazuhide Hasebe , Masanobu Matsunaga , Masato Yonezawa , Hansong Cheng
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/31608 , H01L21/31633 , H01L21/3185
摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.
摘要翻译：本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

62. 发明授权

US08722510B2 Trench-filling method and film-forming system 有权
标题翻译：沟槽填充法和成膜系统
公开(公告)号：US08722510B2
公开(公告)日：2014-05-13
申请号：US13194426
申请日：2011-07-29
申请人： Masahisa Watanabe , Kazuhide Hasebe
发明人： Masahisa Watanabe , Kazuhide Hasebe
IPC分类号： H01L21/76
CPC分类号： H01L21/67167 , H01L21/02164 , H01L21/02222 , H01L21/02304 , H01L21/02323 , H01L21/32055 , H01L21/32105 , H01L21/67207 , H01L21/76227
摘要： A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.
摘要翻译：填充沟槽的方法包括加热其中形成有沟槽的半导体衬底和至少形成在沟槽的侧壁上的氧化膜，并将氨基硅烷气体供应到衬底的表面，以在半导体上形成晶种层对其上形成有籽晶层的半导体基板进行加热，并向种子层的表面供给单硅烷气体，以在种子层上形成硅膜，填充形成有硅膜的半导体衬底的沟槽在其上通过燃烧收缩的填充材料，并且在将填充材料变为氧化硅并且改变硅膜的同时，在填充有水和/或羟基的气氛中填充沟槽的填充材料涂覆的半导体衬底燃烧，种子层成为氧化硅。

63. 发明授权

US08431494B2 Film formation method and film formation apparatus 有权
标题翻译：成膜方法和成膜装置
公开(公告)号：US08431494B2
公开(公告)日：2013-04-30
申请号：US13164280
申请日：2011-06-20
申请人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
发明人： Hiroki Murakami , Kazuhide Hasebe , Kazuya Yamamoto , Toshihiko Takahashi , Daisuke Suzuki
IPC分类号： H01L21/469 , H01L21/316
CPC分类号： C23C16/401 , C23C16/45523
摘要： A film formation method of forming a silicon oxide film on a surface of an object to be processed in a process chamber includes absorbing a seed gas comprising a silane-based gas on the surface of the object to be processed by supplying the seed gas into the process chamber, forming a silicon film having an impurity by supplying a silicon-containing gas as a material gas, and an addition gas including the impurity into the process chamber, and oxidizing the silicon film to convert the silicon film into the silicon oxide film. Accordingly, the silicon oxide film having the high density and the high stress is formed on the surface of the object to be processed.
摘要翻译：在处理室中的待处理物体的表面上形成氧化硅膜的成膜方法包括通过将种子气体供给到待处理物体的表面上来吸收包含硅烷类气体的种子气体处理室，通过将作为原料气体的含硅气体和含有该杂质的添加气体供给到处理室中，形成具有杂质的硅膜，氧化硅膜，将硅膜转换成氧化硅膜。因此，在待处理物体的表面上形成具有高密度和高应力的氧化硅膜。

64. 发明申请

US20130005142A1 METHOD AND APPARATUS FOR FORMING SILICON FILM 有权
标题翻译：用于形成硅膜的方法和装置
公开(公告)号：US20130005142A1
公开(公告)日：2013-01-03
申请号：US13537622
申请日：2012-06-29
申请人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
发明人： Akinobu Kakimoto , Satoshi Takagi , Kazuhide Hasebe
IPC分类号： H01L21/283
CPC分类号： C23C16/24 , C23C16/045 , C23C16/45523 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877
摘要： Provided is a method and apparatus for forming a silicon film, which are capable of suppressing generation of a void or seam. The method includes performing a first film-forming process, performing an etching process, performing a doping process, and performing a second film-forming process. In the first film-forming process, a non-doped silicon film that is not doped with an impurity is formed so as to embed a groove of an object. In the etching process, the non-doped silicon film formed via the first film-forming process is etched. In the doping process, the non-doped silicon film etched via the etching process is doped with an impurity. In the second film-forming process, an impurity-doped silicon film is formed so as to embed the silicon film doped via the doping process.
摘要翻译：提供一种能够抑制空隙或接缝的产生的用于形成硅膜的方法和装置。该方法包括进行第一成膜处理，进行蚀刻处理，进行掺杂工序，以及进行第二成膜工序。在第一成膜工艺中，形成未掺杂有杂质的非掺杂硅膜，从而嵌入物体的凹槽。在蚀刻工艺中，蚀刻经由第一成膜工艺形成的非掺杂硅膜。在掺杂工艺中，通过蚀刻工艺蚀刻的非掺杂硅膜掺杂有杂质。在第二成膜工艺中，形成杂质掺杂硅膜，以便嵌入通过掺杂工艺掺杂的硅膜。

65. 发明授权

US07923378B2 Film formation method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的成膜方法和装置
公开(公告)号：US07923378B2
公开(公告)日：2011-04-12
申请号：US12320535
申请日：2009-01-28
申请人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
发明人： Kazuhide Hasebe , Shigeru Nakajima , Jun Ogawa
IPC分类号： H01L21/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/402 , C23C16/45536 , H01L21/02164 , H01L21/02219 , H01L21/0228 , H01L21/31612
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
摘要翻译：在目标基板上通过CVD形成含硅绝缘膜，在选择性地供给包含二异丙基氨基硅烷气体的第一工艺气体和包含氧化性气体或氮化气体的第二工艺气体的工艺领域中。通过交替地执行包括第一和第二步骤的循环的多次来形成膜。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化或氮化目标衬底表面上的吸附层。第二步骤包括通过激励机构激励第二处理气体的第二处理气体供应给处理场的激励周期。

66. 发明申请

US20100319619A1 OXIDATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS 审中-公开
标题翻译：氧化方法和半导体工艺的设备
公开(公告)号：US20100319619A1
公开(公告)日：2010-12-23
申请号：US12852692
申请日：2010-08-09
申请人： Takehiko FUJITA , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
发明人： Takehiko FUJITA , Jun Ogawa , Shigeru Nakajima , Kazuhide Hasebe
IPC分类号： C23C16/52 , C23C16/22
CPC分类号： C30B33/005 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32449 , H01L21/02238 , H01L21/02252 , H01L21/31662
摘要： In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.
摘要翻译：在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。一种或两种氧化气体和脱氧气体被激活。使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

67. 发明授权

US07651733B2 Method for forming a vapor phase growth film 有权
标题翻译：形成气相生长膜的方法
公开(公告)号：US07651733B2
公开(公告)日：2010-01-26
申请号：US11407354
申请日：2006-04-20
申请人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
发明人： Kazuhide Hasebe , Hiroyuki Yamamoto , Takahito Umehara , Masato Kawakami
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译：本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体喷出口，用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。

68. 发明申请

US20090104760A1 VERTICAL CVD APPPARATUS FOR FORMING SILICON-GERMANIUM FILM 失效
标题翻译：用于形成硅 - 锗膜的垂直CVD涂层
公开(公告)号：US20090104760A1
公开(公告)日：2009-04-23
申请号：US12341642
申请日：2008-12-22
申请人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
发明人： Masaki KUROKAWA , Katsuhiko Komori , Norifumi Kimura , Kazuhide Hasebe , Takehiko Fujita , Akitake Tamura , Yoshikazu Furusawa
IPC分类号： H01L21/205
CPC分类号： C23C16/22 , C23C16/45578
摘要： A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.
摘要翻译：布置垂直CVD装置以一起处理多个目标基板以形成硅锗膜。该装置包括反应容器，其具有被配置为容纳目标基板的过程区域，以及配置成将混合气体供应到过程区域中的公共供应系统。混合气体包括硅烷族的第一工艺气体和锗族的第二工艺气体。共同供应系统包括设置在不同高度的多个供应口。

69. 发明申请

US20080264339A1 Film forming method, film forming system and recording medium 有权
标题翻译：成膜方法，成膜系统和记录介质
公开(公告)号：US20080264339A1
公开(公告)日：2008-10-30
申请号：US12213574
申请日：2008-06-20
申请人： Kazuhide Hasebe , Mitsuhiro Okada
发明人： Kazuhide Hasebe , Mitsuhiro Okada
IPC分类号： B05C11/00
CPC分类号： C23C16/52 , C23C16/4408
摘要： After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles.A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.
摘要翻译：氮化硅膜通过成膜工艺在反应容器中形成在氮化硅膜上之后，通过清洗配方规定的清洗方法处理反应容器，与成膜工艺相容，通过除去表面来抑制气体和颗粒的产生沉积在反应容器内表面上的部分薄膜，并导致气体和颗粒的产生。将保持多个晶片W的晶片舟皿25装载到反应容器2中，并且通过由成膜配方1指定的成膜工艺处理晶片W，该成膜方法指定例如Si 2 O 3， Cl 2气体和NH 3气体作为成膜气体。随后，自动选择指定与成膜过程相容的清洗过程的清洗配方1，并通过清洗配方1规定的清洗处理来处理反应容器2。从指定与成膜过程相容的清洗处理的多个清洗配方自动选择清洗配方。清洗时间的不必要的延长被抑制，反应容器2可以通过与成膜过程相容的适当清洗过程进行处理。

70. 发明申请

US20080081104A1 Film formation method and apparatus for forming silicon oxide film 有权
标题翻译：用于形成氧化硅膜的成膜方法和装置
公开(公告)号：US20080081104A1
公开(公告)日：2008-04-03
申请号：US11902782
申请日：2007-09-25
申请人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
发明人： Kazuhide Hasebe , Yoshihiro Ishida , Takehiko Fujita , Jun Ogawa , Shigeru Nakajima
IPC分类号： C23C16/44
CPC分类号： C23C16/509 , C23C16/402 , C23C16/45542 , C23C16/45546 , H01J37/3244 , H01L21/02164 , H01L21/02222 , H01L21/02274 , H01L21/0228
摘要： An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.
摘要翻译：在选择性地供给包括硅源气体的第一工艺气体和包括氧化气体的第二工艺气体的工艺领域中，通过CVD在目标衬底上形成氧化物膜。氧化膜是通过循环执行而形成的，每个循环包括第一和第二步骤。第一步进行第一处理气体的供给，由此在目标基板的表面形成含有硅的吸附层。第二工序气体供给第二工序气体，从而氧化目标衬底表面上的吸附层。硅源气体是一价或二价氨基硅烷气体，并且每个循环被设置为使用低于用于三价氨基硅烷气体的工艺温度的工艺温度。

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