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1. 发明授权

US08722510B2 Trench-filling method and film-forming system 有权
标题翻译：沟槽填充法和成膜系统
公开(公告)号：US08722510B2
公开(公告)日：2014-05-13
申请号：US13194426
申请日：2011-07-29
申请人： Masahisa Watanabe , Kazuhide Hasebe
发明人： Masahisa Watanabe , Kazuhide Hasebe
IPC分类号： H01L21/76
CPC分类号： H01L21/67167 , H01L21/02164 , H01L21/02222 , H01L21/02304 , H01L21/02323 , H01L21/32055 , H01L21/32105 , H01L21/67207 , H01L21/76227
摘要： A method of filling a trench comprises heating a semiconductor substrate having a trench formed therein and an oxide film formed at least on the sidewall of the trench and supplying an aminosilane gas to the surface of the substrate so as to form a seed layer on the semiconductor substrate, heating the semiconductor substrate having the seed layer formed thereon and supplying a monosilane gas to the surface of the seed layer so as to form a silicon film on the seed layer, filling the trench of the semiconductor substrate, which has the silicon film formed thereon, with a filling material that shrinks by burning, and burning the semiconductor substrate coated by the filling material filling the trench in an atmosphere containing water and/or a hydroxy group while changing the filling material into a silicon oxide and changing the silicon film and the seed layer into a silicon oxide.
摘要翻译：填充沟槽的方法包括加热其中形成有沟槽的半导体衬底和至少形成在沟槽的侧壁上的氧化膜，并将氨基硅烷气体供应到衬底的表面，以在半导体上形成晶种层对其上形成有籽晶层的半导体基板进行加热，并向种子层的表面供给单硅烷气体，以在种子层上形成硅膜，填充形成有硅膜的半导体衬底的沟槽在其上通过燃烧收缩的填充材料，并且在将填充材料变为氧化硅并且改变硅膜的同时，在填充有水和/或羟基的气氛中填充沟槽的填充材料涂覆的半导体衬底燃烧，种子层成为氧化硅。

2. 发明申请

US20120206535A1 METHOD FOR MANUFACTURING LIQUID DISCHARGE HEAD 有权
标题翻译：制造液体放电头的方法
公开(公告)号：US20120206535A1
公开(公告)日：2012-08-16
申请号：US13456977
申请日：2012-04-26
申请人： Jun Yamamuro , Masaki Ohsumi , Masahisa Watanabe , Keiji Edamatsu
发明人： Jun Yamamuro , Masaki Ohsumi , Masahisa Watanabe , Keiji Edamatsu
IPC分类号： B41J2/015
CPC分类号： B41J2/1603 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1645
摘要： A method for manufacturing a liquid discharge head provided with a substrate which has a layer made of silicon nitride and with a discharge port forming member which is disposed above the layer made of silicon nitride and has a discharge port for discharging liquid. The method includes providing a photosensitive layer that is to be the discharge port forming member above the layer made of silicon nitride, and forming the discharge port by exposing the photosensitive layer to i-line. The layer made of silicon nitride has a refractive index of 2.05 or more to light of a wavelength of 633 nm and irradiation with the i-line is performed in the exposure.
摘要翻译：一种液体排出头的制造方法，该喷液头具有由氮化硅构成的层和配置在由氮化硅构成的层的上方的具有喷出口形成部件的基板的液体排出头，具有排出液体的排出口。该方法包括将作为排出口形成部件的感光层设置在由氮化硅制成的层上方，并通过将感光层曝光于i线而形成排出口。由氮化硅制成的层对于波长为633nm的光具有2.05以上的折射率，并且在曝光中进行i线的照射。

3. 发明授权

US07879397B2 Method for processing polysilazane film 有权
标题翻译：聚硅氮烷薄膜的加工方法
公开(公告)号：US07879397B2
公开(公告)日：2011-02-01
申请号：US11987134
申请日：2007-11-27
申请人： Masahisa Watanabe , Tetsuya Shibata
发明人： Masahisa Watanabe , Tetsuya Shibata
IPC分类号： C23C16/00 , B05D3/00 , B05D3/02 , B05D3/04
CPC分类号： H01L21/316 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/76826 , H01L21/76828
摘要： A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.
摘要翻译：一种加工聚硅氮烷薄膜的方法包括：将设置在其上的聚硅氮烷涂膜的目标基板的反应容器的处理区域从预热温度改变到预定温度，同时设定处理场成为含有氧并且具有6.7至26.7kPa的第一压力的第一气氛。然后，该方法包括通过在不低于预定温度的第一工艺温度下烘烤涂膜来进行第一热处理，以获得含有硅和氧的绝缘膜，同时将工艺场设定为含有氧化气体的第二气氛并且具有高于第一压力的第二压力。

4. 发明申请

US20090263292A1 METHOD AND APPARATUS FOR PROCESSING POLYSILAZANE FILM 有权
标题翻译：用于处理多晶硅膜的方法和装置
公开(公告)号：US20090263292A1
公开(公告)日：2009-10-22
申请号：US12496349
申请日：2009-07-01
申请人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
发明人： Shingo Hishiya , Kimiya Aoki , Masahisa Watanabe
IPC分类号： B01J19/00
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02318 , H01L21/02337 , H01L21/76837 , H01L29/78
摘要： A method of processing a polysilazane film includes a first heat process and a subsequent second heat process performed on a target substrate with a polysilazane coating film formed thereon. The first heat process is performed by supplying water vapor into a process area within a reaction container, which accommodates the target substrate, while setting the process area at a first temperature of from 390° C. to 410° C. The second heat process is performed by supplying water vapor into the process area, while setting the process area at a second temperature of from 600° C. to 800° C.
摘要翻译：一种加工聚硅氮烷膜的方法包括在其上形成有聚硅氮烷涂层的目标基板上进行的第一热处理和随后的第二热处理。第一加热过程是通过将反应容器内的处理区域中的水蒸气供给到容纳目标基板的处理区域中，同时将处理区域设定在390℃至410℃的第一温度。第二加热过程是通过将水蒸气供给到处理区域中，同时将处理区域设定在600℃至800℃的第二温度。

5. 发明申请

US20080139001A1 Method for processing polysilazane film 有权
标题翻译：聚硅氮烷薄膜的加工方法
公开(公告)号：US20080139001A1
公开(公告)日：2008-06-12
申请号：US11987134
申请日：2007-11-27
申请人： Masahisa Watanabe , Tetsuya Shibata
发明人： Masahisa Watanabe , Tetsuya Shibata
IPC分类号： H01L21/31
CPC分类号： H01L21/316 , H01L21/02164 , H01L21/0217 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/76826 , H01L21/76828
摘要： A method for processing a polysilazane film includes performing temperature increase of changing a process field of a reaction container, which accommodates a target substrate with a polysilazane coating film formed thereon, from a pre-heating temperature to a predetermined temperature, while setting the process field to be a first atmosphere containing oxygen and having a first pressure of 6.7 to 26.7 kPa. Then, the method includes performing a first heat process for obtaining an insulating film containing silicon and oxygen by baking the coating film at a first process temperature not lower than the predetermined temperature, while setting the process field to be a second atmosphere containing an oxidizing gas and having a second pressure higher than the first pressure.
摘要翻译：一种加工聚硅氮烷薄膜的方法包括：将设置在其上的聚硅氮烷涂膜的目标基板的反应容器的处理区域从预热温度改变到预定温度，同时设定处理场成为含有氧并且具有6.7至26.7kPa的第一压力的第一气氛。然后，该方法包括通过在不低于预定温度的第一工艺温度下烘烤涂膜来进行第一热处理，以获得含有硅和氧的绝缘膜，同时将工艺场设定为含有氧化气体的第二气氛并且具有高于第一压力的第二压力。

6. 发明授权

US08685832B2 Trench filling method and method of manufacturing semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的沟槽填充方法和方法
公开(公告)号：US08685832B2
公开(公告)日：2014-04-01
申请号：US13594217
申请日：2012-08-24
申请人： Masahisa Watanabe
发明人： Masahisa Watanabe
IPC分类号： H01L21/76
CPC分类号： H01L21/76229
摘要： Provided is a trench filling method, which includes: forming a silicon oxide liner on a semiconductor substrate with trenches formed therein, the trenches including narrow-width portions having a first minimum isolation width and wide-width portions having a second minimum isolation width being wider than the first minimum isolation width; forming an oxidation-barrier film on the silicon oxide liner; forming a silicon liner on the oxidation-barrier film; filling the narrow-width portions with a first filling material; filling the wide-width portions with a second filling material; and oxidizing the silicon liner.
摘要翻译：提供了一种沟槽填充方法，其包括：在其上形成有沟槽的半导体衬底上形成氧化硅衬垫，所述沟槽包括具有第一最小隔离宽度的窄宽度部分和具有第二最小隔离宽度的宽度部分比第一个最小隔离宽度; 在氧化硅衬垫上形成氧化阻挡膜; 在氧化阻挡膜上形成硅衬垫; 用第一填充材料填充窄宽度部分; 用第二填充材料填充宽幅部分; 并氧化硅衬套。

7. 发明授权

US08430476B2 Method for manufacturing liquid discharge head 有权
标题翻译：液体排放头的制造方法
公开(公告)号：US08430476B2
公开(公告)日：2013-04-30
申请号：US13456977
申请日：2012-04-26
申请人： Jun Yamamuro , Masaki Ohsumi , Masahisa Watanabe , Keiji Edamatsu
发明人： Jun Yamamuro , Masaki Ohsumi , Masahisa Watanabe , Keiji Edamatsu
IPC分类号： B41J2/015 , B41J2/135 , B41J2/16
CPC分类号： B41J2/1603 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1639 , B41J2/1642 , B41J2/1645
摘要： A method for manufacturing a liquid discharge head provided with a substrate which has a layer made of silicon nitride and with a discharge port forming member which is disposed above the layer made of silicon nitride and has a discharge port for discharging liquid. The method includes providing a photosensitive layer that is to be the discharge port forming member above the layer made of silicon nitride, and forming the discharge port by exposing the photosensitive layer to i-line. The layer made of silicon nitride has a refractive index of 2.05 or more to light of a wavelength of 633 nm and irradiation with the i-line is performed in the exposure.
摘要翻译：一种液体排出头的制造方法，该喷液头具有由氮化硅构成的层和配置在由氮化硅构成的层的上方的具有喷出口形成部件的基板的液体排出头，具有排出液体的排出口。该方法包括将作为排出口形成部件的感光层设置在由氮化硅制成的层上方，并通过将感光层曝光于i线而形成排出口。由氮化硅制成的层对于波长为633nm的光具有2.05以上的折射率，并且在曝光中进行i线的照射。

8. 发明授权

US08286350B2 Method of manufacturing a liquid discharge head 有权
标题翻译：液体排出头的制造方法
公开(公告)号：US08286350B2
公开(公告)日：2012-10-16
申请号：US12699995
申请日：2010-02-04
申请人： Tsuyoshi Takahashi , Shuji Koyama , Masaki Ohsumi , Masahisa Watanabe
发明人： Tsuyoshi Takahashi , Shuji Koyama , Masaki Ohsumi , Masahisa Watanabe
IPC分类号： B21D53/76
CPC分类号： B41J2/1635 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1642 , B41J2/1645 , Y10T29/49083 , Y10T29/49128 , Y10T29/4913 , Y10T29/49165 , Y10T29/49401
摘要： An object of the invention is to provide a method of manufacturing a liquid discharge head in which a distance between a discharge opening and an energy generating element is uniform, simply and with good precision.
摘要翻译：本发明的目的是提供一种制造排液头的方法，其中排放口和能量产生元件之间的距离是简单且精确的。

9. 发明申请

US20100102473A1 METHOD OF MANUFACTURING LIQUID DISCHARGE HEAD 有权
标题翻译：制造液体放电头的方法
公开(公告)号：US20100102473A1
公开(公告)日：2010-04-29
申请号：US12574352
申请日：2009-10-06
申请人： Masahisa Watanabe , Shuji Koyama , Kenji Ono , Kenji Fujii , Shuhei Oya , Seiko Minami
发明人： Masahisa Watanabe , Shuji Koyama , Kenji Ono , Kenji Fujii , Shuhei Oya , Seiko Minami
IPC分类号： B29C41/50 , B29C41/38
CPC分类号： B29C41/36 , B29C41/38 , B29C41/50 , B29L2031/756 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1639 , B41J2/1645
摘要： A method of manufacturing a liquid discharge head including a flow path member for forming a flow path communicating with a discharge port discharging a liquid forms a mold of the flow path made of a positive photosensitive resin on a substrate; applies a coated layer on the mold for forming the flow path member, which coated layer includes a solvent, an epoxy resin, and a curing agent of the epoxy resin; removes the solvent from the coated layer at a normal temperature under substantially 1 atm. so that the weight of the coated layer may become 93% or less of that of the coated layer at a time of the applying of the coated layer, and then further removes the solvent from the coated layer under a depressurized condition; cures the coated layer; and removes the mold to form the flow path.
摘要翻译：一种液体排出头的制造方法，其特征在于，具有形成与排出液体的排出口连通的流路的流路部件，在基板上形成由正性感光性树脂构成的流路的模具，在模具上涂覆涂层以形成流路构件，该涂层包括溶剂，环氧树脂和环氧树脂的固化剂; 在常温下在大约1atm下从涂层中除去溶剂。使得在涂布涂层时涂层的重量可以变得比涂层的重量的93％以下，然后在减压条件下进一步从涂层中除去溶剂; 固化涂层; 并移除模具以形成流路。

10. 发明授权

US07300596B2 Method of manufacturing liquid discharge head 有权
标题翻译：液体排放头的制造方法
公开(公告)号：US07300596B2
公开(公告)日：2007-11-27
申请号：US11481796
申请日：2006-07-07
申请人： Hiroyuki Murayama , Shuji Koyama , Yoshinori Tagawa , Kenji Fujii , Masaki Ohsumi , Yoshinobu Urayama , Jun Yamamuro , Tsuyoshi Takahashi , Masahisa Watanabe
发明人： Hiroyuki Murayama , Shuji Koyama , Yoshinori Tagawa , Kenji Fujii , Masaki Ohsumi , Yoshinobu Urayama , Jun Yamamuro , Tsuyoshi Takahashi , Masahisa Watanabe
IPC分类号： B41J2/05 , H01L21/00
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1635 , B41J2/1639 , B41J2/164 , B41J2/1645
摘要： The method of manufacturing a recording head has a flow path wall forming step of forming flow path walls on a substrate having energy generating elements formed thereon, an imbedded material depositing step of depositing an imbedded material between the flow path walls and on a top of each flow path wall, a flattening step of polishing a top of the deposited imbedded material, until the top of the flow path wall is exposed, and a step of forming an orifice plate on the tops of the polished imbedded material and the exposed flow path wall. In the step of forming the flow path walls, patterning of a close contact property improvement layer is simultaneously performed to improve a close contact property between the flow path wall and the substrate.
摘要翻译：制造记录头的方法具有流路壁形成步骤，在其上形成有能量产生元件的基板上形成流路壁，嵌入材料沉积步骤，在流路壁之间和每个顶部上沉积嵌入材料流动路径壁，抛光沉积的嵌入材料的顶部的平坦化步骤，直到流动路径壁的顶部被暴露，以及在抛光的嵌入材料的顶部上形成孔板的步骤和暴露的流动路径壁。在形成流路壁的步骤中，同时进行紧密接触性改善层的图案化，以改善流路壁和基板之间的紧密接触性。

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