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    • 62. 发明授权
    • Superconductive oxide single crystal and manufacturing method thereof
    • 超导氧化物单晶及其制造方法
    • US5444040A
    • 1995-08-22
    • US973608
    • 1992-11-06
    • Hironao KojimaIsao Tanaka
    • Hironao KojimaIsao Tanaka
    • C30B13/00C30B13/26
    • C30B29/225C30B13/00
    • A method of manufacturing a single crystal of a superconductive oxide by a travelling solvent floating zone method (TSFZ Method). In this manufacturing method, a sintered feed rod of an oxide belonging to a tetragonal system, exhibiting anisotropic properties and superconductive properties and having a stoichiometric composition of the superconductive oxide is melted into a layer of a solvent mainly consisting of a oxidized copper and arranged in an infrared heating furnace under an oxygen pressure thereby growing a large single crystal of the superconductive oxide which is 5 mm or over in diameter and 40 mm or over in length.The superconductive oxide is one selected from the group consisting of La.sub.2-x A.sub.x CuO.sub.4 (A:Sr,Ba), Nd.sub.2-x Ce.sub.x CuO.sub.4, YBa.sub.2 Cu.sub.3 O.sub.7-x, BiSrCaCu.sub.2 O.sub.x, Tl.sub.2 Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x, and the growth of the single crystal is effected in such a manner that after the feed rod has been melted into the solvent having a composition of 55 to 91 mol % CuO, the single crystal is grown and increased in size under the following growth conditions: oxygen pressure=0.15 MPa or over, growth temperature=1100.degree. to 1300.degree. C. and growth rate=0.5 to 3 mm/h. Further, in the growth of the single crystal, a seed crystal is used and the seed crystal is grown by a necking growth process to effect the crystal growth along its a-axis. Further, the grown single crystal is annealed in the presence of oxygen or nitrogen.
    • 通过行驶溶剂漂浮区域法(TSFZ Method)制造超导氧化物的单晶的方法。 在该制造方法中,将具有各向异性特性和超导性,并具有超导氧化物的化学计量组成的属于四方晶系的氧化物的烧结进料棒熔融成主要由氧化铜组成的溶剂层, 在氧气压力下的红外加热炉,从而生长直径为5mm或以上且长度为40mm或以上的超导氧化物的大单晶。 超导氧化物选自La2-xAxCuO4(A:Sr,Ba),Nd2-xCexCuO4,YBa2Cu3O7-x,BiSrCaCu2Ox,T12Ba2Ca2Cu3Ox中的一种,并且单晶的生长以这样的方式进行: 进料棒已经熔化成组成为55〜91mol%的CuO的溶剂,在以下生长条件下使单晶生长并增大尺寸:氧压力= 0.15MPa以上,生长温度= 1100〜1300℃ C.生长速率= 0.5〜3mm / h。 此外,在单晶的生长中,使用晶种,并且通过颈缩生长工艺生长晶种以沿其a轴实现晶体生长。 此外,生长的单晶在氧或氮的存在下退火。