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61. 发明申请

US20080023972A1 Attachment structure of energy absorbing structure 失效
标题翻译：能量吸收结构的附件结构
公开(公告)号：US20080023972A1
公开(公告)日：2008-01-31
申请号：US11878081
申请日：2007-07-20
申请人： Yoshikazu Ohno , Haruhiko Yamamoto , Takao Ito
发明人： Yoshikazu Ohno , Haruhiko Yamamoto , Takao Ito
IPC分类号： B60R19/24
CPC分类号： B60R19/18 , B60R2019/188
摘要： An attachment structure of an energy absorbing structure includes: a bumper reinforcement that includes an attachment surface, with insertion holes being formed in the attachment surface; an energy absorbing structure disposed in contact with the attachment surface; locking claws that are disposed on the energy absorbing structure and engage with the bumper reinforcement to lock the energy absorbing structure to the bumper reinforcement; and load receiving projections that are disposed on the energy absorbing structure and are inserted into the insertion holes, so that when a load in a direction along the attachment surface acts on the energy absorbing structure, the load receiving projections interfere with inner peripheral portions of the insertion holes and receive the load.
摘要翻译：能量吸收结构的安装结构包括：保险杠加强件，其包括附接表面，在所述附接表面中形成有插入孔; 设置成与所述附接表面接触的能量吸收结构; 锁定爪，其设置在能量吸收结构上并与保险杠加强件接合以将能量吸收结构锁定到保险杠加强件; 以及负载接收突起，其设置在能量吸收结构上并被插入到插入孔中，使得当沿着附着表面的方向上的负载作用在能量吸收结构上时，负载接收突起与内部的插入孔并接收负载。

62. 发明授权

US07080943B2 Slide guide device for press 有权
公开(公告)号：US07080943B2
公开(公告)日：2006-07-25
申请号：US10341534
申请日：2003-01-13
申请人： Kanamaru Hisanobu , Takao Ito
发明人： Kanamaru Hisanobu , Takao Ito
IPC分类号： F16C29/12
CPC分类号： F16C29/001 , B30B15/041 , F16C29/02 , F16C29/126
摘要： The present invention provides a slide guide for a press which comprises a gib structure with a spherical surface. The gibs are formed on a frame of the press. The spherical surface is provided with a holder or a cap to cover the spherical surface. The surface contacts are formed between the spherical surface bodies and the gibs or between the caps and the gibs. Forming spherical contact surfaces prevents damage to the sliding surface. This slide guide provides uniform, secure contact at a sliding surface of a press and prevents uneven contact. The spherical surface body can be easily installed and can adapt to deformation of the slide and prevent damage to the sliding surface.

63. 发明申请

US20050250174A1 Method for evaluating antifungal agent 有权
标题翻译：抗真菌剂评估方法
公开(公告)号：US20050250174A1
公开(公告)日：2005-11-10
申请号：US11153181
申请日：2005-06-15
申请人： Takuji Nakashima , Akira Nozawa , Takao Ito
发明人： Takuji Nakashima , Akira Nozawa , Takao Ito
IPC分类号： C12Q1/06 , C12Q1/18 , G01N33/50
CPC分类号： C12Q1/18 , C12Q1/06 , G01N33/5088
摘要： A correct viable cell number of a microorganism in a biological tissue is measured by cultivating a fragment of the biological tissue such as skin infected with the microorganism and administered with an antimicrobial agent, in a medium containing a phospholipid, a nonionic surfactant, or both of the phospholipid and the nonionic surfactant.
摘要翻译：通过在含有磷脂，非离子表面活性剂或两者的培养基中培养生物组织的片段，例如感染微生物的皮肤并施用抗微生物剂来测量生物组织中微生物的正确的活细胞数磷脂和非离子表面活性剂。

64. 发明授权

US06707104B2 Lateral high-breakdown-voltage transistor 有权
标题翻译：横向高击穿电压晶体管
公开(公告)号：US06707104B2
公开(公告)日：2004-03-16
申请号：US10277744
申请日：2002-10-23
申请人： Kiminori Watanabe , Keisuke Matsuoka , Takao Ito
发明人： Kiminori Watanabe , Keisuke Matsuoka , Takao Ito
IPC分类号： H01L2978
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1083 , H01L29/1095 , H01L29/7393 , H01L29/7801 , H01L29/7835
摘要： A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.
摘要翻译：横向高击穿电压晶体管包括彼此分离的在p型硅衬底中形成的n +漏极区域和n +源极区域，形成在与衬底绝缘的沟道上的栅极电极，形成在漏极区域中的n +漏极接触区域，经由漏极接触区域与漏极区域电连接的漏极布线，与源极区域形成的ap +衬底接触区域，以及与源极区域电连接的源极布线并且还经由衬底接触区域连接到半导体层。晶体管的特征在于，衬底接触区域具有与源极布线接触的相应部分，并且因此从源极布线的接触表面的内侧横向延伸到接触表面的外部。

65. 发明授权

US06527569B2 Card connector with low profile ejector mechanism 失效
公开(公告)号：US06527569B2
公开(公告)日：2003-03-04
申请号：US09911665
申请日：2001-07-24
申请人： Takao Kodama , Takao Ito , Shinichi Maezono , Masahiro Mogi
发明人： Takao Kodama , Takao Ito , Shinichi Maezono , Masahiro Mogi
IPC分类号： H01R1362
CPC分类号： G06K13/0806 , G06K13/08
摘要： Disclosed is a low-profile card connector comprising a U-shaped housing; terminals mounted in the housing; and a card ejector comprising a rotary lever and an ejection rod for turning the rotary lever. The rotary lever comprises front and rear sections. The front section is contiguous with the rear section, and is in a plane lower and parallel to the rear section. The front section is rotatably fixed to the main body, and is covered by a cover member, which is assembled to the main body and the overlying front section of the rotary lever to be coplanar with the rear section of the rotary lever.

66. 发明授权

US5759887A Semiconductor device and a method of manufacturing a semiconductor device 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5759887A
公开(公告)日：1998-06-02
申请号：US867897
申请日：1997-06-03
申请人： Takao Ito , Masayuki Ayabe
发明人： Takao Ito , Masayuki Ayabe
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/06
CPC分类号： H01L21/8234 , H01L27/0629
摘要： A method of manufacturing a semiconductor integrated circuit (IC) includes the steps of forming a polycrystalline silicon layer containing impurities on a semiconductor substrate; forming an oxidation-resistant insulating layer on the polycrystalline silicon layer; simultaneously forming resist patterns for forming a capacitor element and a resistor element on the oxidation-resistant insulating layer; and patterning the oxidation-resistant insulating layer and the polycrystalline silicon layer in sequence using resist patterns.
摘要翻译：一种制造半导体集成电路（IC）的方法包括以下步骤：在半导体衬底上形成含有杂质的多晶硅层; 在所述多晶硅层上形成抗氧化绝缘层; 同时在抗氧化绝缘层上形成用于形成电容器元件和电阻元件的抗蚀剂图案; 并使用抗蚀剂图案依次图案化耐氧化绝缘层和多晶硅层。

67. 发明授权

US5128667A Wireless remote controller for outputting in seriatim an operation mode signal for each of a plurality of receiving devices 失效
标题翻译：无线远程控制器，用于连续输入各种接收设备的操作模式信号
公开(公告)号：US5128667A
公开(公告)日：1992-07-07
申请号：US701237
申请日：1991-05-16
申请人： Masahiro Enomoto , Takao Ito , Takeshi Nakanishi
发明人： Masahiro Enomoto , Takao Ito , Takeshi Nakanishi
IPC分类号： H04Q9/00 , G08C17/00 , G08C19/28 , H03J9/06 , H04Q9/14
CPC分类号： G08C19/28 , G08C17/00 , H03J9/06 , G08C2201/92
摘要： An improved wireless remote controller for controlling each of several devices under control in each mode of operation without requiring any switching among devices under control and thus having no device switching key mounted thereon. The wireless remote controller has a plurality of operation selection keys and is designed to operate in such manner that when the controller is directed toward one of the devices under control and any one of the operation mode selection keys is depressed, a corresponding operation mode signal is generated and transmitted to a device under control. The operation mode signal includes a series of consecutive signal components for operating all the devices under control. The device under control responds only to the associated one of the signal components of the operation mode signal.

68. 发明授权

US4810668A Semiconductor device element-isolation by oxidation of polysilicon in trench 失效
标题翻译：通过在沟槽中氧化多晶硅的半导体器件元件隔离
公开(公告)号：US4810668A
公开(公告)日：1989-03-07
申请号：US72446
申请日：1987-07-13
申请人： Takao Ito
发明人： Takao Ito
IPC分类号： H01L21/76 , H01L21/31 , H01L21/316 , H01L21/762 , H01L21/473
CPC分类号： H01L21/76227
摘要： A method of manufacturing a semiconductor apparatus is disclosed, in which in the method of isolating elements, is improved. A groove is cut in a semiconductor substrate. Elements are isolated from each other by embedding an insulating material in the groove, in two divided portions. The time required for depositing an insulating material is reduced, thereby forming a uniform insulation layer on the semiconductor substrate. Since the insulating material can be etched in a shorter period of time than was previously required, the etching process can be more finely controlled. Since a field oxide layer is formed by oxidizing an insulation layer formed for the first time, the field oxide layer can be provided without oxidizing those portions of the semiconductor substrate which lie near the groove. Consequently, the seminconductor substrate can be free from crystalline defects.
摘要翻译：公开了一种制造半导体装置的方法，其中在隔离元件的方法中得到改善。在半导体衬底中切割凹槽。通过将绝缘材料嵌入凹槽中，以两个分开的方式将元件彼此隔离。沉积绝缘材料所需的时间减少，从而在半导体衬底上形成均匀的绝缘层。由于可以在比以前更短的时间段内蚀刻绝缘材料，所以可以更精细地控制蚀刻工艺。由于通过氧化第一次形成的绝缘层来形成场氧化物层，所以可以提供场氧化物层而不氧化位于槽附近的半导体衬底的那些部分。因此，半导体基底可以没有结晶缺陷。

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