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    • 64. 发明授权
    • Method for manufacturing photoelectric converting device
    • 光电转换装置的制造方法
    • US07867807B2
    • 2011-01-11
    • US12161890
    • 2007-02-28
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • H01L21/00
    • H01J40/02
    • The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.
    • 本发明涉及一种获得光电转换装置的制造方法,该光电转换装置能够充分保持用于光电阴极的容纳空间的气密性,而不会降低光电阴极的特性。 根据制造方法,在下框架的侧壁端面和形成光电转换装置的外壳的上框架的接合部分形成铬和镍的多层金属膜。 在减压至预定真空度并且具有不高于铟的熔点的温度的真空空间中,引入其中的这些上下框架以预定压力彼此紧密接触,同时夹入铟线构件,并且 因此,获得具有充分保持气密性的收纳空间的信封。
    • 66. 发明申请
    • PHOTOMULTIPLIER
    • 照相机
    • US20090212699A1
    • 2009-08-27
    • US12388961
    • 2009-02-19
    • Takayuki OhmuraHiroyuki KyushimaHideki ShimoiTsuyoshi Kodama
    • Takayuki OhmuraHiroyuki KyushimaHideki ShimoiTsuyoshi Kodama
    • H01J43/18
    • H01J43/26H01J43/28
    • The present invention relates to a photomultiplier that realizes a significant improvement of response time characteristics by a structure enabling mass production. The photomultiplier comprises a sealed container, and, in the sealed container, a photocathode, an electron multiplier section, and an anode are respectively disposed. The electron multiplier section includes multiple stages of dynode units, and each of the multiple stages of dynode units is fixed with one end of the associated dynode pin while being electrically connected thereto. In particular, the dynode pin, whose one ends are fixed to the multiple stages of dynode units, are held within an effective region of the electron multiplier section contributing to secondary electron multiplication, when the electron multiplier section is viewed from the photocathode side. By this configuration, a focusing distance from the photocathode to a first stage dynode unit can be shortened effectively and the effective region of the electron multiplier section can be enlarged to effectively reduce variations in transit time of photoelectrons propagating from the photocathode to the first stage dynode unit.
    • 本发明涉及光电倍增器,其通过能够批量生产的结构实现响应时间特性的显着改善。 光电倍增管包括密封容器,并且在密封容器中分别设置光电阴极,电子倍增器部分和阳极。 电子倍增器部分包括多级倍增电极单元,并且多级倍增电极单元中的每一级在相关联的倍增极引脚的一端被电连接的同时被固定。 特别地,当从光电阴极侧观察电子倍增器部分时,其一端固定到倍增电极单元的多级的倍增极引脚被保持在有助于二次电子倍增的电子倍增器部分的有效区域内。 通过这种结构,可以有效地缩短从光电阴极到第一级倍增电极单元的聚焦距离,并且可以扩大电子倍增器部分的有效区域,从而有效地减少从光电阴极传播到第一级倍增电极的光电子的通过时间的变化 单元。
    • 70. 发明授权
    • Laser processing method
    • 激光加工方法
    • US08945416B2
    • 2015-02-03
    • US13389048
    • 2011-07-19
    • Hideki ShimoiKeisuke Araki
    • Hideki ShimoiKeisuke Araki
    • H01L21/02B23K26/38B23K26/40H01L21/306H01L21/48B23K26/00
    • H05K3/002B23K26/382B23K26/384B23K26/40B23K26/55B23K2101/35B23K2103/50H01L21/30604H01L21/30625H01L21/486H05K2203/107
    • A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
    • 一种激光加工方法,其将激光会聚到由硅制成的待加工物体中以形成改质区域,并沿着改质区域蚀刻物体以形成具有通孔的物体,其包括:抗蚀剂膜制造步骤 产生耐蚀刻物体的外表面上的蚀刻抗蚀剂膜; 在该抗蚀剂膜制造工序之后,将激光会聚在被处理物体上的激光聚光步骤,沿着与物体的贯通孔对应的部分形成改质区域,并将激光会聚在抗蚀剂膜上,以便 沿着与蚀刻抗蚀剂膜中的通孔对应的部分形成缺陷区域; 以及在激光聚光步骤之后蚀刻所述物体以便沿着所述改质区域选择性地进行蚀刻并形成所述通孔的蚀刻步骤。