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    • 2. 发明申请
    • METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTING DEVICE
    • 制造光电转换器件的方法
    • US20090305450A1
    • 2009-12-10
    • US12161890
    • 2007-02-28
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • H01L21/50
    • H01J40/02
    • The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.
    • 本发明涉及一种获得光电转换装置的制造方法,该光电转换装置能够充分保持用于光电阴极的容纳空间的气密性,而不会降低光电阴极的特性。 根据制造方法,在下框架的侧壁端面和形成光电转换装置的外壳的上框架的接合部分形成铬和镍的多层金属膜。 在减压至预定真空度并且具有不高于铟的熔点的温度的真空空间中,引入其中的这些上下框架以预定压力彼此紧密接触,同时夹入铟线构件,并且 因此,获得具有充分保持气密性的收纳空间的信封。
    • 4. 发明授权
    • Method for manufacturing photoelectric converting device
    • 光电转换装置的制造方法
    • US07867807B2
    • 2011-01-11
    • US12161890
    • 2007-02-28
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • Hitoshi KishitaHiroyuki SugiyamaHiroyuki KyushimaHideki ShimoiKeisuke Inoue
    • H01L21/00
    • H01J40/02
    • The present invention relates to a manufacturing method of obtaining a photoelectric converting device which can sufficiently maintain airtightness of a housing space for photocathode without degradation of the characteristics of the photocathode. In accordance with the manufacturing method, on the side wall end face of a lower frame and a bonding portion of an upper frame forming an envelope of the photoelectric converting device, a multilayered metal film of chromium and nickel is formed. In a vacuum space decompressed to a predetermined degree of vacuum and having a temperature not more than the melting point of indium, these upper and lower frames introduced therein are brought into close contact with each other with a predetermined pressure while sandwiching indium wire members, and accordingly, an envelope having a housing space whose airtightness is sufficiently maintained is obtained.
    • 本发明涉及一种获得光电转换装置的制造方法,该光电转换装置能够充分保持用于光电阴极的容纳空间的气密性,而不会降低光电阴极的特性。 根据制造方法,在下框架的侧壁端面和形成光电转换装置的外壳的上框架的接合部分形成铬和镍的多层金属膜。 在减压至预定真空度并且具有不高于铟的熔点的温度的真空空间中,引入其中的这些上下框架以预定压力彼此紧密接触,同时夹入铟线构件,并且 因此,获得具有充分保持气密性的收纳空间的信封。
    • 5. 发明授权
    • Photomultiplier
    • 光电倍增管
    • US07928657B2
    • 2011-04-19
    • US11921934
    • 2006-06-01
    • Hiroyuki KyushimaHideki ShimoiHiroyuki SugiyamaHitoshi KishitaSuenori KimuraYuji MasudaTakayuki Ohmura
    • Hiroyuki KyushimaHideki ShimoiHiroyuki SugiyamaHitoshi KishitaSuenori KimuraYuji MasudaTakayuki Ohmura
    • H01J40/00H01J40/16
    • H01J43/06
    • The present invention relates to a photomultiplier having a fine configuration capable of realizing stable detection accuracy. The photomultiplier has a housing whose inside is maintained vacuum, and a photocathode, an electron-multiplier section, and an anode are disposed in the housing. In particular, one or more control electrodes disposed in an internal space of the housing which surrounds the electron-multiplier section and the anode are electrically connected via one or more connection parts extending from an electron emission terminal of the electron-multiplier section. In this configuration, due to a voltage, instead of the applying between an electron entrance terminal and the electron emission terminal of the electron-multiplier section, being applied between the electron entrance terminal and the control electrodes, an electric potential gradient which is increased gradually from the photocathode side toward the anode side is formed in the electron-multiplier section, and a sufficient electric potential difference is provided between the electron emission terminal of the electron-multiplier section and the anode, which makes it possible to obtain stable detection accuracy.
    • 本发明涉及具有能够实现稳定的检测精度的精细结构的光电倍增管。 光电倍增管具有内部保持真空的壳体,并且光电阴极,电子倍增器部分和阳极设置在壳体中。 特别地,设置在外壳的内部空间中的一个或多个控制电极,其围绕电子倍增器部分和阳极通过从电子倍增器部分的电子发射端延伸的一个或多个连接部分电连接。 在该结构中,由于电压而不是在电子入射端子和电子倍增器部分的电子发射端子之间施加,而被施加在电子入射端子和控制电极之间,逐渐增加的电位梯度 在电子倍增部形成从光电阴极侧朝向阳极侧,在电子倍增部的电子发射端与阳极之间设置充分的电位差,能够得到稳定的检测精度。