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61. 发明授权

US08575722B2 Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer 有权
标题翻译：具有多层膜的半导体衬底和通过使多孔层分层来再利用衬底的方法
公开(公告)号：US08575722B2
公开(公告)日：2013-11-05
申请号：US13142544
申请日：2009-12-08
申请人： Kiyoshi Mitani , Tsuyoshi Ohtsuki , Toru Takahashi , Wei Feig Qu
发明人： Kiyoshi Mitani , Tsuyoshi Ohtsuki , Toru Takahashi , Wei Feig Qu
IPC分类号： H01L29/06 , H01L21/46 , H01L21/00
CPC分类号： H01L21/76259 , H01L21/0203 , H01L21/02032 , H01L27/1214 , H01L27/1266
摘要： A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard.
摘要翻译：一种制造具有多层膜的半导体晶片的制造方法，其特征在于，在半导体装置的制造中，通过将表面部分变为多孔层，在半导体晶片的表面形成多孔层，在表面形成半导体膜的多孔层，以制造具有多层膜的半导体晶片，在半导体膜上制造器件，并且通过沿着多孔层分层半导体膜来制造半导体器件，该半导体膜具有形成在其上的器件，包括使半导体所述方法还包括：通过重新使用所述半导体晶片以满足预定标准来调整具有要制造的多层膜的半导体晶片的整体厚度的厚度调整步骤。

62. 发明申请

US20080286937A1 Manufacturing Method for Bonded Wafer 有权
标题翻译：粘结晶片的制造方法
公开(公告)号：US20080286937A1
公开(公告)日：2008-11-20
申请号：US11629074
申请日：2005-06-06
申请人： Kiyoshi Mitani
发明人： Kiyoshi Mitani
IPC分类号： H01L21/265
CPC分类号： H01L21/26506 , H01L21/76254
摘要： In a first ion implantation step (a1), a delamination-intended ion implantation layer 3 is formed by implanting ions at a dosage less than a critical dosage from the insulating film 2 side of a bond wafer 1. In an additional function layer deposition step (b2), an additional function layer 4 is deposited on the insulating film 2 of the bond wafer 1. In a second ion implantation step (c1), by implanting ions at a dosage, the delamination-intended ion implantation layer 3 is matured into a delamination ion implantation layer 3′. Thereby, the delamination ion implantation layer is formed by two steps of ion implantation having the additional function layer deposition step therebetween, and therefore non-uniformity of the additional function layer does not influence uniformity of a film thickness of a bonded semiconductor thin layer.
摘要翻译：在第一离子注入步骤（a1）中，通过从接合晶片1的绝缘膜2侧以小于临界剂量的剂量注入离子而形成分层预期的离子注入层3。在另外的功能层沉积步骤（b2）中，附着功能层4沉积在接合晶片1的绝缘膜2上。在第二离子注入步骤（c1）中，通过以剂量注入离子，分层预期的离子注入层3成熟为分层离子注入层3'。因此，分离离子注入层通过离子注入两步形成，其间具有附加功能层沉积步骤，因此附加功能层的不均匀性不影响键合的半导体薄层的膜厚度的均匀性。

63. 发明申请

US20080003785A1 Method for Producing Semiconductor Wafer 有权
标题翻译：生产半导体晶圆的方法
公开(公告)号：US20080003785A1
公开(公告)日：2008-01-03
申请号：US11662594
申请日：2005-09-16
申请人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
发明人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
IPC分类号： H01L21/20
CPC分类号： C30B33/06 , C30B29/30 , C30B29/32 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02694
摘要： The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a Si1-XGeX layer (0
摘要翻译：本发明是一种半导体晶片的制造方法，其特征在于至少包括以下步骤：将Si 1-X 1 Ge x X 1层（0 1-X＆lt; Ge＆lt; X＆gt;层变成富集的SiGe层，其中至少在氧化气氛下从950℃或更低的温度开始氧化热处理，进行氧化，使得形成的Si 1-Y Y Y Y Y层在升温至950℃期间保留。因此，可以提供一种半导体制造方法可以通过短时间的热处理充分地进行SGOI晶片中的SiGe层的晶格弛豫的晶片，并且可以降低其制造成本。

64. 发明授权

US07315064B2 Bonded wafer and method of producing bonded wafer 有权
标题翻译：粘合晶片及其制造方法
公开(公告)号：US07315064B2
公开(公告)日：2008-01-01
申请号：US11300503
申请日：2005-12-15
申请人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
发明人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/2007 , H01L21/76254 , H01L29/045
摘要： The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.
摘要翻译：本发明提供一种接合晶片，其中至少在单晶硅晶片上形成硅单晶层，所述硅单晶层的晶面取向为{110}，所述硅单晶晶片具有晶面方向{100}。本发明还提供一种制造接合晶片的方法，其中在至少具有{110}的晶面取向的第一硅单晶晶片和具有{100}晶面取向的第二硅单晶晶片之后，通过绝缘膜直接或结合，将第一硅单晶晶片制成薄膜。由此，通过利用具有{110}面的硅单晶晶片，可以提供可以获得具有良好特性的MIS器件的晶片。

65. 发明授权

US07091107B2 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US07091107B2
公开(公告)日：2006-08-15
申请号：US10782838
申请日：2004-02-23
申请人： Isao Yokokawa , Kiyoshi Mitani
发明人： Isao Yokokawa , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46 , H01L21/00 , H01L21/76
CPC分类号： H01L21/76254
摘要： There is disclosed a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by, at least implanting at least one kind of ion of hydrogen ion and a rare gas ion into the surface portion of a bond wafer to form an ion-implanted layer, bonding the bond wafer and a base wafer to each other through an oxide film, and delaminating the resultant bonded wafer at the ion-implanted layer, wherein assuming that X [nm] represents the thickness of the buried oxide film and Y [nm] represents the thickness of the SOI layer in the SOI wafer immediately after delaminating at the ion-implanted layer, when the thickness X of the buried oxide film is X≦100, in forming the ion-implanted layer, the ion implantation is carried out with the ion implantation conditions being set such that the sum X+Y of the thickness of the buried oxide film and the thickness of the SOI layer satisfies X+Y>1500−14X, after which the bonding process and the delaminating process are carried out and, thereafter, a thinning treatment of the SOI layer is carried out to make the SOI layer into a thin film having a predetermined thickness. Thereby, there can be provided a method of producing an SOI wafer capable of producing a high-quality SOI wafer at a high yield without generating any blister and any void.
摘要翻译：公开了一种制造SOI晶片的方法，其中在掩埋氧化膜上形成SOI层，至少将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面部分到形成离子注入层，通过氧化膜将接合晶片和基底晶片彼此接合，并且在离子注入层分层所得的键合晶片，其中假设X [nm]表示掩埋氧化物的厚度膜，Y [nm]表示在离子注入层分层后立即SOI晶片中的SOI层的厚度，当形成离子注入层时，当掩埋氧化膜的厚度X为X <= 100时，进行离子注入，其中离子注入条件被设置为使掩埋氧化物膜的厚度和SOI层的厚度的和X + Y满足X + Y> 1500-14X，之后，接合工艺和分层过程进行a 然后，进行SOI层的薄化处理，以使SOI层成为具有预定厚度的薄膜。因此，可以提供一种制造能够以高产率制造高品质SOI晶片的SOI晶片的方法，而不产生任何起泡和任何空隙。

66. 发明授权

US07084046B2 Method of fabricating SOI wafer 失效
标题翻译：制造SOI晶圆的方法
公开(公告)号：US07084046B2
公开(公告)日：2006-08-01
申请号：US10495988
申请日：2002-10-31
申请人： Kiyoshi Mitani , Isao Yokokawa
发明人： Kiyoshi Mitani , Isao Yokokawa
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： After completion of annealing for bonding of the base wafer 1 and bond wafer 2, the bond wafer 2 is thinned to a first thickness suitable for ion implantation, and boron is ion-implanted to thereby form a high-boron-concentration layer 10. A second thinning step based on selective etching is then carried out while using the high-boron-concentration layer 10 as an etch stop layer. This is successful in providing a method of fabricating an SOI wafer which is suppressed both in intra-wafer uniformity of the firm thickness and in inter-wafer uniformity of the film thickness even when a required level for the thickness of the SOI layer is extremely small.
摘要翻译：在完成基底晶片1和接合晶片2的接合退火完成之后，将接合晶片2减薄至适于离子注入的第一厚度，并且离子注入硼，从而形成高硼浓度层10。然后在使用高硼浓度层10作为蚀刻停止层的同时进行基于选择性蚀刻的第二稀化步骤。这成功地提供了制造SOI晶片的方法，其即使当SOI层的厚度的所需水平非常小时也抑制了厚度的晶片内均匀性和膜厚度的晶片间均匀性。

67. 发明授权

US07052974B2 Bonded wafer and method of producing bonded wafer 有权
标题翻译：粘合晶片及其制造方法
公开(公告)号：US07052974B2
公开(公告)日：2006-05-30
申请号：US10496379
申请日：2002-11-25
申请人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
发明人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/2007 , H01L21/76254 , H01L29/045
摘要： The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.
摘要翻译：本发明提供一种接合晶片，其中至少在单晶硅晶片上形成硅单晶层，所述硅单晶层的晶面取向为{110}，所述硅单晶晶片具有晶面方向{100}。本发明还提供一种制造接合晶片的方法，其中在至少具有{110}的晶面取向的第一硅单晶晶片和具有{100}晶面取向的第二硅单晶晶片之后，通过绝缘膜直接或结合，将第一硅单晶晶片制成薄膜。由此，通过利用具有{110}面的硅单晶晶片，可以提供可以获得具有良好特性的MIS器件的晶片。

68. 发明授权

US06959854B2 Production method for bonded substrates 有权
标题翻译：粘结基材的生产方法
公开(公告)号：US06959854B2
公开(公告)日：2005-11-01
申请号：US10311438
申请日：2002-04-09
申请人： Isao Yokokawa , Masatake Nakano , Kiyoshi Mitani
发明人： Isao Yokokawa , Masatake Nakano , Kiyoshi Mitani
IPC分类号： B08B3/04 , H01L21/02 , H01L21/304 , H01L21/762 , H01L27/12 , B23K28/00 , B23K1/20 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76251 , H01L21/76254
摘要： There is provided a method for producing a bonded substrate comprising, at least, a process of joining two substrates and a process of subjecting the joined substrates to heat treatment to bond them firmly, wherein, at least, a process of cleaning for removing contaminants on the surface of the substrates is performed before joining the substrates, and then a process of drying the cleaned surface of the substrates is performed without using the water displacing method for the drying process, so that moisture is left on the substrates before joining to increase a joining strength after joining the substrates. Thereby, there can be provided a method for producing a bonded substrate wherein a joining strength of the joining interface of the substrates to be joined is improved, and thus the bonded substrate wherein there is no void failure and blister failure in the bonding interface of a bonded substrate after bonding heat treatment can be produced at high productivity and high yield.
摘要翻译：提供了一种用于制造接合基材的方法，至少包括两个接合基板的接合方法以及对连接的基板进行热处理以使其牢固结合的方法，其中至少包括清除污染物的方法在接合基板之前进行基板的表面，然后在不使用干燥工艺的排水方法的情况下进行基板的清洁表面的干燥处理，从而在接合之前在基板上留下水分以增加接合基板后的接合强度。因此，可以提供一种接合基板的制造方法，其中提高了待接合基板的接合界面的接合强度，因此提供了接合基板，其中在接合界面处没有空隙故障和起泡失效可以以高生产率和高产率生产粘合热处理后的粘合基材。

69. 发明授权

US06312797B1 Method for manufacturing bonded wafer and bonded wafer 有权
标题翻译：制造接合晶片和接合晶片的方法
公开(公告)号：US06312797B1
公开(公告)日：2001-11-06
申请号：US09350143
申请日：1999-07-09
申请人： Isao Yokokawa , Kiyoshi Mitani
发明人： Isao Yokokawa , Kiyoshi Mitani
IPC分类号： H01L2134
CPC分类号： H01L21/02052 , H01L21/2007 , H01L21/76254 , Y10S438/974 , Y10T428/265
摘要： The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3-1014 atoms/cm2 or less.
摘要翻译：本发明的目的是提供一种接合晶片，其中通过氢离子分层方法获得的接合晶片的接合状态较差，在优异的生产特性下在连接界面处没有发现分离或没有空隙，低成本。在通过氢离子分层方法制造接合晶片的方法中，两个晶片彼此紧密接触的紧密接触表面的碳浓度为3-1014原子/ cm 2以下。

70. 外观设计

USD414867S Dental camera 失效
公开(公告)号：USD414867S
公开(公告)日：1999-10-05
申请号：US91348
申请日：1998-07-28
申请人： Masahiko Moriwaki , Kiyoshi Mitani
设计人： Masahiko Moriwaki , Kiyoshi Mitani

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