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61. 发明授权

US06869640B2 Coating film forming method and coating film forming apparatus 失效
公开(公告)号：US06869640B2
公开(公告)日：2005-03-22
申请号：US10162606
申请日：2002-06-06
申请人： Kousuke Yoshihara , Yuichi Terashita
发明人： Kousuke Yoshihara , Yuichi Terashita
IPC分类号： H01L21/203 , B05D1/00 , B05D3/10 , G03F7/16 , H01L21/00 , B05D1/36 , B05D3/12
CPC分类号： H01L21/6715 , B05D1/005 , B05D3/104 , G03F7/162
摘要： A coating film is formed by the steps of supplying a mixture of a solvent for dissolving a coating liquid and a volatilization suppressing substance for suppressing the volatilization of the solvent onto the surface of the target substrate W, expanding the mixture onto the entire surface of the target substrate W, and supplying a coating liquid onto substantially the central portion of the target substrate W that has received the mixture while rotating the target substrate W thereby expanding the coating liquid outward in the radial direction of the target substrate W thereby forming a coating film.

62. 发明授权

US08691336B2 Coating treatment method, non-transitory computer storage medium and coating treatment apparatus 有权
标题翻译：涂层处理方法，非暂时性计算机存储介质和涂层处理装置
公开(公告)号：US08691336B2
公开(公告)日：2014-04-08
申请号：US13069522
申请日：2011-03-23
申请人： Kousuke Yoshihara , Katsunori Ichino
发明人： Kousuke Yoshihara , Katsunori Ichino
IPC分类号： B05D3/12 , G06F19/00
CPC分类号： H01L21/6715 , G03F7/162
摘要： A coating treatment method includes: a first step of discharging a coating solution from a nozzle to a central portion of a substrate while acceleratingly rotating the substrate, to apply the coating solution over the substrate; a second step of then decelerating the rotation of the substrate and continuously rotating the substrate; and a third step of then accelerating the rotation of the substrate to dry the coating solution on the substrate. In the first step, the acceleration of the rotation of the substrate is changed in the order of a first acceleration, a second acceleration higher than the first acceleration, and a third acceleration lower than the second acceleration to acceleratingly rotate the substrate at all times.
摘要翻译：一种涂布处理方法，其特征在于，包括：在将基板加速旋转的同时将涂布液从喷嘴排出到基板的中央部的第一工序，将涂布液涂布在基板上; 第二步骤，然后使基板的旋转减速并连续旋转基板; 以及第三步骤，然后加速基底的旋转以将涂层溶液干燥在基底上。在第一步骤中，基板的旋转的加速度以第一加速度，比第一加速度高的第二加速度和比第二加速度低的第三加速度的顺序改变，以一直加速旋转基板。

63. 发明授权

US08506186B2 Coating and developing apparatus, coating and developing method and non-transitory tangible medium 有权
标题翻译：涂层和显影装置，涂层和显影方法以及非瞬态有形介质
公开(公告)号：US08506186B2
公开(公告)日：2013-08-13
申请号：US13225985
申请日：2011-09-06
申请人： Shinichi Hayashi , Yuichi Douki , Akira Miyata , Yuuichi Yamamoto , Kousuke Yoshihara , Nobuaki Matsuoka , Suguru Enokida
发明人： Shinichi Hayashi , Yuichi Douki , Akira Miyata , Yuuichi Yamamoto , Kousuke Yoshihara , Nobuaki Matsuoka , Suguru Enokida
IPC分类号： G03D5/00
CPC分类号： G03F7/3021 , G03F7/162 , H01L21/67178 , H01L21/67742 , H01L21/67745
摘要： A process block including a group of liquid-process related unit blocks, a first heating-process related block arranged on a carrier block side of the group of unit blocks, and a second heating-process related block arranged on an interface block side of the group of unit blocks. The group of liquid-process unit blocks includes doubled unit blocks for preprocessing for forming an antireflection film and a resist film, doubled unit blocks for post-processing for forming an upper layer film and performing a cleaning operation before exposure, and a unit block for developing. The first heating-process related block heats a substrate coated with a resist liquid and a substrate that has been developed. The second heating-process related block heats a substrate that has been exposed but is not yet developed, a substrate on which an antireflection film has been formed and a substrate on which an upper layer film has been formed.
摘要翻译：一种处理块，包括一组液体处理相关单元块，布置在该组单位块的载体块侧的第一加热处理相关块，以及布置在该单元块的界面块侧的第二加热处理相关块单位块组。液体处理单元块组包括用于形成防反射膜和抗蚀剂膜的预处理的双重单元块，用于形成上层膜的后处理和进行曝光之前的清洁操作的双倍单位块，以及用于发展。第一加热工艺相关块加热涂覆有抗蚀剂液体和已经显影的基底的基底。第二加热处理相关块加热已经暴露但尚未显影的基板，已经形成有抗反射膜的基板和已经形成有上层膜的基板。

64. 发明授权

US08105738B2 Developing method 有权
标题翻译：开发方法
公开(公告)号：US08105738B2
公开(公告)日：2012-01-31
申请号：US13096095
申请日：2011-04-28
申请人： Kousuke Yoshihara
发明人： Kousuke Yoshihara
IPC分类号： G03F7/30 , G03C5/00
CPC分类号： G03F7/0035 , H01L21/6715
摘要： Disclosed is a developing method that performs a developing for forming a second resist pattern after forming and exposing a resist film on a surface of a substrate on which a first resist pattern is formed. The method includes a first process for developing the substrate for a first time period t1 in the state where the substrate stops, and a second process for developing the substrate for a second time period while rotating the substrate. The time ratio of first time period and second time period is adjusted so that a critical dimension of the first resist pattern is equal to a first predetermined value, and a total time of first time period and second time period is adjusted so that a critical dimension of the second resist pattern is equal to a second predetermined value.
摘要翻译：公开了一种显影方法，其在形成第一抗蚀剂图案的基板的表面上形成和曝光抗蚀剂膜之后，进行用于形成第二抗蚀剂图案的显影。该方法包括用于在衬底停止的状态下第一时间段t1显影衬底的第一工艺，以及用于在旋转衬底的同时使衬底显影第二时间段的第二工艺。调整第一时间段和第二时间段的时间比，使得第一抗蚀剂图案的临界尺寸等于第一预定值，并且调整第一时间段和第二时间段的总时间，使得临界尺寸的第二抗蚀剂图案等于第二预定值。

65. 发明申请

US20110008538A1 APPARATUS AND METHOD OF FORMING AN APPLIED FILM 有权
标题翻译：装置和形成应用膜的方法
公开(公告)号：US20110008538A1
公开(公告)日：2011-01-13
申请号：US12859790
申请日：2010-08-20
申请人： Kousuke Yoshihara , Hiroichi Inada
发明人： Kousuke Yoshihara , Hiroichi Inada
IPC分类号： B05D3/12
CPC分类号： H01L21/67051 , G03F7/162 , H01L21/6715
摘要： There is provided an apparatus including: a processing cup having an opening opened upward to allow a substrate to be loaded and unloaded, an exhaust port for exhausting an unnecessary atmosphere produced in forming a film applied on the substrate, and an aspiration port for aspirating external air; and an aspiration device aspirating the unnecessary atmosphere through the exhaust port, wherein when the substrate is accommodated in the opening of the processing cup, the substrate has a perimeter spaced from the opening by a predetermined gap, and below the substrate accommodated in the processing cup there is formed an exhaust flow path extending from the aspiration port to the exhaust port.
摘要翻译：提供了一种装置，包括：处理杯，其具有向上开口以允许衬底被装载和卸载的开口;排出端口，用于排出在形成施加在衬底上的膜时产生的不必要的气氛;以及抽吸端口，用于吸入外部空气; 以及抽吸装置，其通过所述排气口吸入不需要的气氛，其中当所述基板容纳在所述加工杯的开口中时，所述基板具有与所述开口间隔开预定间隙的周边，并且在容纳在所述加工杯中的所述基板的下方形成从抽吸口向排气口延伸的排气流路。

66. 发明授权

US07742146B2 Coating and developing method, coating and developing system and storage medium 有权
标题翻译：涂层和显影方法，涂层和显影系统和储存介质
公开(公告)号：US07742146B2
公开(公告)日：2010-06-22
申请号：US11623481
申请日：2007-01-16
申请人： Hideharu Kyouda , Kousuke Yoshihara , Taro Yamamoto
发明人： Hideharu Kyouda , Kousuke Yoshihara , Taro Yamamoto
IPC分类号： G03B27/52 , G03D5/00 , H01L21/00
CPC分类号： G03F7/2041 , G03F7/11 , G03F7/38
摘要： A resist film formed on a substrate is coated with a water-repellent protective film and the substrate is subjected to a developing process after the substrate has been processed by an immersion exposure process. The protective film is removed from the substrate after the resist film has been processed by the immersion exposure process, the substrate is processed by a heating process, and then the substrate is subjected to a developing process. The surface of the substrate is cleaned with a cleaning liquid before the protective film is removed and after the substrate has been processed by the immersion exposure process or the surface of the substrate is cleaned with a cleaning liquid after removing the protective film and before the substrate is subjected to the heating process.
摘要翻译：在基板上形成的抗蚀剂膜涂覆有防水保护膜，并且在通过浸没曝光工艺处理基板之后对基板进行显影处理。在通过浸渍曝光工艺处理了抗蚀剂膜之后，从基板上除去保护膜，通过加热工艺处理基板，然后对基板进行显影处理。在除去保护膜之前，用浸渍曝光工序处理基板后，用清洗液清洗基板的表面，在除去保护膜之后和基板之前用清洗液清洗基板的表面进行加热处理。

67. 发明授权

US07384595B2 Heat-treating apparatus and heat-treating method 失效
标题翻译：热处理装置和热处理方法
公开(公告)号：US07384595B2
公开(公告)日：2008-06-10
申请号：US10968033
申请日：2004-10-20
申请人： Kazuhiko Ooshima , Yuichi Terashita , Momoko Shizukuishi , Hideo Shite , Kousuke Yoshihara
发明人： Kazuhiko Ooshima , Yuichi Terashita , Momoko Shizukuishi , Hideo Shite , Kousuke Yoshihara
IPC分类号： F27D11/00
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67748 , H01L21/67751
摘要： A heat-treating apparatus comprises a table having a heating element buried therein, a plate-like target object to be processed being disposed on the table so as to be heated to a prescribed temperature, a support member for supporting the target object and movable in the vertical direction relative to the table such that the support member is moved to permit the target object supported by the support member to be disposed on the table or is moved away from the table, a cover surrounding the upper portion of the table, and a casing surrounding the lower portion of the table and combined with the cover so as to form a process chamber. When the process chamber is opened, the support member permits the target object to be housed inside the cover.
摘要翻译：一种热处理装置，具有埋设有加热元件的工作台，将要加工的板状待处理对象物放置在工作台上以被加热到规定温度的状态下，相对于桌子的垂直方向，使得支撑构件被移动以允许由支撑构件支撑的目标对象被布置在桌子上或者被移动离开桌子，围绕桌子的上部的盖子以及壳体围绕桌子的下部并与盖组合以形成处理室。当处理室打开时，支撑构件允许目标物体容纳在盖内。

68. 发明申请

US20070128356A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20070128356A1
公开(公告)日：2007-06-07
申请号：US11673299
申请日：2007-02-09
申请人： Yuji Matsuyama , Takahiro Kitano , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
发明人： Yuji Matsuyama , Takahiro Kitano , Masatoshi Deguchi , Kousuke Yoshihara , Naruaki Iida
IPC分类号： B05D3/12 , B05D1/40
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

69. 发明申请

US20060193986A1 Heat processing apparatus and heat processing method 失效
标题翻译：热处理设备和热处理方法
公开(公告)号：US20060193986A1
公开(公告)日：2006-08-31
申请号：US10550284
申请日：2004-03-26
申请人： Kousuke Yoshihara , Yuichi Terashita , Momoko Shizukuishi , Atsushi Ookouchi , Hideharu Kyouda
发明人： Kousuke Yoshihara , Yuichi Terashita , Momoko Shizukuishi , Atsushi Ookouchi , Hideharu Kyouda
IPC分类号： B05D3/02
CPC分类号： H01L21/67248 , F27D19/00 , G03F7/168 , H01L21/67109
摘要： A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF
摘要翻译：烘焙具有含有挥发性物质的抗蚀剂涂膜的基板的热处理装置包括热板2，热板温度控制单元3，限定加热空间30的液体组件1a，5,32和流体空间31，空气供应单元18,18A和吸入单元10,10A，其在流体空间31中产生沿水平方向流动的气流;以及控制器22,22A，其控制热板温度控制单元3，空气供给单元18,18A，抽吸单元10,10A和气体温度控制单元19，使得TP

70. 发明授权

US06527860B1 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US06527860B1
公开(公告)日：2003-03-04
申请号：US09685075
申请日：2000-10-10
申请人： Kousuke Yoshihara , Akihiro Fujimoto
发明人： Kousuke Yoshihara , Akihiro Fujimoto
IPC分类号： B05C1500
CPC分类号： H01L21/6715
摘要： A spin chuck for holding a wafer to the front face of which a resist solution is supplied, a cup for housing the spin chuck and forcibly exhausting an atmosphere around the wafer by exhaust from the bottom thereof, and an air flow control plate, provided in the cup to surround the outer periphery of the wafer, for controlling an air flow in the vicinity of the wafer are provided. Accordingly, a state of a special air flow at an outer edge portion of a substrate to be processed can be eliminated, thereby preventing an increase in film thickness at the outer edge portion.
摘要翻译：用于将晶片保持在供给抗蚀剂溶液的正面的旋转卡盘，用于容纳旋转卡盘的杯，并且从其底部排出强制地排出晶片周围的气氛;以及气流控制板，其设置在提供围绕晶片的外周的杯，用于控制晶片附近的空气流。因此，能够消除处理基板的外缘部的特殊空气流的状态，防止外缘部的膜厚增加。

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