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    • 61. 发明授权
    • Laser surveying system and distance measuring method
    • 激光测量系统和测距方法
    • US07884923B2
    • 2011-02-08
    • US12315357
    • 2008-12-02
    • Kaoru KumagaiKenichiro YoshinoYasushi TanakaIkuo Ishinabe
    • Kaoru KumagaiKenichiro YoshinoYasushi TanakaIkuo Ishinabe
    • G01C3/08
    • G01C3/08G01S7/4814G01S17/10G01S17/42
    • A laser surveying system, comprising a light source for emitting a laser beam, a projection optical system for turning the laser beam from the light source to a parallel luminous flux, a scanning unit for projecting the luminous flux of the projected laser beam for scanning, a scanning direction detecting unit for detecting a scanning direction, a photodetection optical system for receiving a reflected light of the projected laser beam from an object to be measured, a photodetection element for performing photo-electric conversion of the reflected light received via the photodetection optical system, and a distance measuring unit for measuring a distance based on a signal from the photodetection element, wherein the projection optical system has a luminous flux diameter changing means, and a luminous flux diameter of the projected laser beam is enabled to be changed.
    • 一种激光测量系统,包括用于发射激光束的光源,用于将来自光源的激光束转动为平行光束的投影光学系统,用于投影用于扫描的投影激光束的光束的扫描单元, 用于检测扫描方向的扫描方向检测单元,用于接收来自待测物体的投影激光束的反射光的光检测光学系统,用于对通过光检测光接收的反射光进行光电转换的光电检测元件 系统和距离测量单元,用于基于来自光电检测元件的信号测量距离,其中投影光学系统具有光束直径改变装置,并且能够改变投影的激光束的光束直径。
    • 63. 发明申请
    • Method and apparatus for reducing OPC model errors
    • 减少OPC模型误差的方法和装置
    • US20070079278A1
    • 2007-04-05
    • US11243933
    • 2005-10-05
    • Yasushi TanakaMasahiro InoharaMatthew Angyal
    • Yasushi TanakaMasahiro InoharaMatthew Angyal
    • G06F17/50
    • G03F1/36G03F1/68
    • A method is provided of accessing model error in an optical proximity correction (OPC) model. The method begins by obtaining a preliminary mask using an OPC model, creating an etched wafer from the preliminary mask using lithography, and measuring a specified critical dimension (CD) on the wafer and a second CD on the wafer. An edge placement error (EPE) is determined that corresponds to a difference between a measured value of the second CD on the wafer and a desired value of the second CD on the wafer. The aforementioned steps are repeated for a plurality of different values of the specified CD to obtain an EPE for each of the different values of the specified CD. For each of the plurality of values of the specified CD, a measured value of a second CD on the wafer is correlated with a corresponding value of the second CD on the mask. For each of the plurality of values of the specified CD, the measured value of the second CD on the wafer is correlated with its corresponding value of the second CD on the mask as predicted by the OPC model. For each of the immediately preceding correlations that are obtained, and at a selected measured value of the second CD on the wafer, a difference Δ is obtained between the difference of the mask CDs calculated by interpolation of wafer CD measurements and by OPC model predictions. Each value of Δ is transformed into an OPC model error that each correspond to a particular value of the specified CD.
    • 提供了一种访问光学邻近校正(OPC)模型中的模型误差的方法。 该方法开始于使用OPC模型获得初步掩模,使用光刻从初步掩模创建蚀刻晶片,并测量晶片上的指定临界尺寸(CD)和晶片上的第二CD。 确定对应于晶片上的第二CD的测量值与晶片上的第二CD的期望值之间的差异的边缘放置误差(EPE)。 针对指定CD的多个不同值重复上述步骤,以获得指定CD的每个不同值的EPE。 对于指定CD的多个值中的每一个,晶片上的第二CD的测量值与掩模上的第二CD的相应值相关。 对于指定CD的多个值中的每一个,晶片上的第二CD的测量值与由OPC模型预测的掩模上的第二CD的对应值相关。 对于所获得的每个先前相关性,并且在晶片上的第二CD的选定测量值处,通过硅片CD测量的插值和通过OPC模型预测计算出的掩模CD的差异获得差值Delta。 Delta的每个值被转换成OPC模型错误,每个对应于指定CD的特定值。
    • 68. 发明授权
    • Upper and lower adjacent picture signal traps
    • 上下相邻图像信号陷阱
    • US5523801A
    • 1996-06-04
    • US229773
    • 1994-04-19
    • Yasushi TanakaGeorge Fang
    • Yasushi TanakaGeorge Fang
    • H04B1/26H04N5/14H04N5/21H04N5/44H04N5/62
    • H04N5/4446H04N5/62H04N5/21
    • To provide a picture intermediate frequency circuit capable of preventing the occurrence of intermodulation beats in a strong electrical field, without affecting in any way the original picture signal. A picture intermediate frequency signal output from the tuner 2 is supplied to a pre-amplifier 5 via an adjacent sound trap circuit 4, and picture trap circuits 11 and 12, both of which are connected in series. Trap circuits 11 and 12 have an attenuation point in the upper and lower frequency components, respectively, equivalent to the frequency difference of the adjacent picture signal frequency with respect to the picture intermediate frequency signal, and trap the .+-.6 MHz frequency components of the picture intermediate frequency signal. This allows the trap circuits 11 and 12 to remove unnecessary adjacent picture signals before they reach the pre-amplifier 5. As a result, the high frequency component generated in the non-linear region of the pre-amplifier 5 in a strong electrical field is prevented from interfering with the high frequency component of the unnecessary adjacent picture signals that produce cross-modulation signals, thus eliminating the occurrence of cross-modulation beats.
    • 提供能够防止在强电场中发生互调节拍的图像中频电路,而不以任何方式影响原始图像信号。 从调谐器2输出的图像中频信号经由相邻的声音陷波电路4和两个串联的图像陷波电路11和12提供给前置放大器5。 陷波电路11和12分别具有与相邻图像信号频率相对于图像中频信号的频率差相当的上部和下部频率分量中的衰减点,并且捕获+/- 6MHz频率分量 图片中频信号。 这样就可以使陷波电路11和12在到达前置放大器5之前除去不必要的相邻图像信号。结果,在强电场中在前置放大器5的非线性区域中产生的高频分量是 防止产生交叉调制信号的不必要的相邻图像信号的高频分量干扰,从而消除交叉调制节拍的发生。
    • 70. 发明授权
    • Method of manufacturing silicon steel sheet having grains precisely
arranged in goss orientation
    • 制造具有精确布置在高斯方向上的晶粒的硅钢板的方法
    • US5489342A
    • 1996-02-06
    • US259389
    • 1994-06-14
    • Kenichi AraiKazushi IshiyamaYasushi TanakaAkira HiuraMisao Namikawa
    • Kenichi AraiKazushi IshiyamaYasushi TanakaAkira HiuraMisao Namikawa
    • C21D1/76C21D8/12C22C38/02H01F1/04
    • C21D8/1233C22C38/02C21D1/76C21D8/1222C21D8/1266C21D8/1272
    • The present invention provides a method of manufacturing a silicon steel sheet having grains precisely arranged in the Goss orientation, comprising the steps of preparing a steel material containing 0.01 wt % or less of C, 2.5 to 7.0 wt % of Si, 0.01 wt % or less of S, 0.01 wt % or less of Al, 0.01 wt % or less of N, subjecting the steel material to hot rolling maintained 1000.degree. C. or higher such that the temperature of the rolled material at an end of the hot rolling step falls within the range of 700.degree. to 950.degree. C., subjecting the steel material to a primary cold rolling process at a rolling reduction of 30 to 85%, annealing the steel material at a temperature of 600.degree. to 900.degree. C., subjecting the steel material to a secondary cold rolling process at a rolling reduction of 40 to 80%, annealing the steel material again at a temperature of 600.degree. to 900.degree. C., subjecting the steel material to a tertiary cold rolling process at a rolling reduction of 50 to 75%, and annealing the steel material in a reducing atmosphere, or in a non-oxidizing atmosphere having an oxygen partial pressure of 0.5 Pa or less, or in a vacuum having an oxygen partial pressure of 0.5 Pa or less, at a temperature in the range of 1000.degree. to 1300.degree. C.
    • 本发明提供一种制造具有精确排列在高斯取向上的晶粒的硅钢板的方法,包括以下步骤:制备含有0.01重量%以下的C,2.5〜7.0重量%的Si,0.01重量% 少量的S,0.01重量%以下的Al,0.01重量%以下的N,对钢材进行热轧保持1000℃以上,使得轧制材料在热轧工序结束时的温度 在700〜950℃的范围内,对钢材进行一次冷轧,轧制压下率为30〜85%,在600〜900℃的温度下退火钢材, 将钢材进行二次冷轧,轧制压下率为40〜80%,在600〜900℃的温度下再次退火钢材,对钢材进行三次冷轧轧制 50〜75%,退火t 在退火气氛中,或在氧分压为0.5Pa以下的非氧化性气氛中,或在氧分压为0.5Pa以下的真空中,在1000℃以上的温度下, 至1300℃