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61. 发明授权

US07705413B2 Micromechanical component and method for producing a micromechanical component 有权
标题翻译：微机械部件及其制造方法
公开(公告)号：US07705413B2
公开(公告)日：2010-04-27
申请号：US12221368
申请日：2008-08-01
申请人： Heribert Weber , Ralf Hausner
发明人： Heribert Weber , Ralf Hausner
IPC分类号： H01L29/84
CPC分类号： B81B7/0051 , B81C2203/0118 , B81C2203/019
摘要： A micromechanical component, in particular a micromechanical sensor, having a first wafer and a second wafer is provided, the first wafer having at least one structural element, and the second wafer having at least one mating structural element, and, in addition, the structural element and the mating structural element are designed in such a way that a relative displacement of the first wafer relative to the second wafer parallel to a main extension plane of the first wafer essentially leads to compressive loading or tensile loading between the structural element and the mating structural element.
摘要翻译：提供具有第一晶片和第二晶片的微机械部件，特别是微机械传感器，第一晶片具有至少一个结构元件，第二晶片具有至少一个配合结构元件，另外，结构元件和配合结构元件被设计成使得第一晶片相对于第二晶片的平行于第一晶片的主延伸平面的相对位移基本上导致结构元件与配合之间的压缩载荷或拉伸载荷结构元素。

62. 发明申请

US20090079037A1 Micromechanical component and method for producing a micromechanical component 有权
标题翻译：微机械部件及其制造方法
公开(公告)号：US20090079037A1
公开(公告)日：2009-03-26
申请号：US12221368
申请日：2008-08-01
申请人： Heribert Weber , Ralf Hausner
发明人： Heribert Weber , Ralf Hausner
IPC分类号： H01L29/06 , H01L21/302
CPC分类号： B81B7/0051 , B81C2203/0118 , B81C2203/019
摘要： A micromechanical component, in particular a micromechanical sensor, having a first wafer and a second wafer is provided, the first wafer having at least one structural element, and the second wafer having at least one mating structural element, and, in addition, the structural element and the mating structural element are designed in such a way that a relative displacement of the first wafer relative to the second wafer parallel to a main extension plane of the first wafer essentially leads to compressive loading or tensile loading between the structural element and the mating structural element.
摘要翻译：提供具有第一晶片和第二晶片的微机械部件，特别是微机械传感器，第一晶片具有至少一个结构元件，第二晶片具有至少一个配合结构元件，另外，结构元件和配合结构元件被设计成使得第一晶片相对于第二晶片的平行于第一晶片的主延伸平面的相对位移基本上导致结构元件与配合之间的压缩载荷或拉伸载荷结构元素。

63. 发明授权

US07045382B2 Method for producing micromechanic sensors and sensors produced by said method 有权
标题翻译：通过所述方法生产微机械传感器和传感器的方法
公开(公告)号：US07045382B2
公开(公告)日：2006-05-16
申请号：US10472650
申请日：2002-03-13
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
IPC分类号： H01L21/00
CPC分类号： G01L9/0055 , B81B2203/033 , B81C1/00047 , B81C1/00246 , B81C2201/0116 , B81C2203/0742 , G01L9/0042 , G01L9/0045
摘要： Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings are introduced into a semiconductor substrate. After the openings are introduced into the semiconductor substrate, a subsequent temperature treatment is carried out, in which the openings are converted into voids in the depth of the substrate.
摘要翻译：提出了一种通过这种方法制造微机械传感器和传感器的方法，其中开口被引入到半导体衬底中。在将开口引入半导体衬底之后，进行随后的温度处理，其中开口被转换成衬底深度的空隙。

64. 发明申请

US20060014392A1 Method for producing a semiconductor component and a semiconductor component produced according to the method 有权
公开(公告)号：US20060014392A1
公开(公告)日：2006-01-19
申请号：US11221228
申请日：2005-09-06
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
IPC分类号： H01L21/311
CPC分类号： G01L9/0042 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00047 , B81C1/00595 , B81C2201/0115 , G01L9/0045 , H01L21/3063
摘要： A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

65. 发明申请

US20050020007A1 Semiconductor element and method for its production 审中-公开
标题翻译：半导体元件及其制造方法
公开(公告)号：US20050020007A1
公开(公告)日：2005-01-27
申请号：US10868602
申请日：2004-06-14
申请人： Heribert Weber , Christoph Schelling
发明人： Heribert Weber , Christoph Schelling
IPC分类号： H01L21/3205 , H01L21/768 , H01L23/34 , H01L23/522 , H01L21/8234
CPC分类号： H01L23/345 , H01L21/76838 , H01L23/5228 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A method of producing conducting tracks and resistors in a semiconductor element that includes at least one conductive layer. The conductive layer is regionally through-oxidized so that at least one region of the conductive layer is electrically insulated by the oxidized regions with respect to the remaining regions of the conductive layer.
摘要翻译：一种在包括至少一个导电层的半导体元件中制造导电轨道和电阻器的方法。导电层被区域通过氧化，使得导电层的至少一个区域相对于导电层的其余区域被氧化区域电绝缘。

66. 发明授权

US06840111B2 Micromechanical component and pressure sensor having a component of this type 失效
标题翻译：具有这种组件的微机械部件和压力传感器
公开(公告)号：US06840111B2
公开(公告)日：2005-01-11
申请号：US10433541
申请日：2002-09-29
申请人： Hubert Benzel , Heribert Weber , Frank Schaefer
发明人： Hubert Benzel , Heribert Weber , Frank Schaefer
IPC分类号： G01L9/00 , H01L29/84 , G01L7/06
CPC分类号： G01L9/0052
摘要： A micromechanical component in which lateral deformations, i.e., deformations of the component parallel to its two main surfaces, are concentrated in a defined area of the component structure, making it possible to decouple lateral and vertical stresses in the component. The component structure includes at least one bellows-like structure in which lateral deformations of the component are concentrated. A pressure sensor having a micromechanical component of this type may be used, for example, for measured-value detection.
摘要翻译：其中侧向变形（即，与其两个主表面平行的部件的变形）集中在部件结构的限定区域中的微机械部件，使得可以使部件中的横向和垂直应力解耦。部件结构包括至少一个波纹管状结构，其中部件的侧向变形被集中。可以使用具有这种类型的微机械部件的压力传感器，例如用于测量值检测。

67. 发明授权

US06803637B2 Micromechanical component with different doping types so that one type is anodized into porous silicon 失效
标题翻译：具有不同掺杂类型的微机械部件，使得一种类型被阳极氧化成多孔硅
公开(公告)号：US06803637B2
公开(公告)日：2004-10-12
申请号：US10169464
申请日：2002-10-28
申请人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
发明人： Hubert Benzel , Heribert Weber , Hans Artmann , Frank Schaefer
IPC分类号： B81B300
CPC分类号： B81C1/00595 , B81B2201/0235 , B81B2201/036 , B81C2201/0114 , B81C2201/0115 , B81C2201/0136 , B81C2203/0136
摘要： A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.
摘要翻译：一种具有由具有第一掺杂类型的衬底材料制成的衬底的微机械部件，设置在衬底中的微机械功能结构以及至少部分地覆盖微机械功能结构的覆盖层。微机械功能结构具有由具有第二掺杂类型的基底材料制成的区域，所述区域至少部分地被空腔包围，并且覆盖层具有由基底材料制成的多孔层。

68. 发明授权

US06365055B1 Process for producing a sensor membrane substrate 失效
标题翻译：传感器膜基板的制造方法
公开(公告)号：US06365055B1
公开(公告)日：2002-04-02
申请号：US09320402
申请日：1999-05-26
申请人： Heribert Weber , Steffen Schmidt
发明人： Heribert Weber , Steffen Schmidt
IPC分类号： H01L2984
CPC分类号： G01L9/0048 , G01F1/6845 , G01F1/86
摘要： A process for producing a sensor membrane substrate, in particular, for a mass flow sensor or a pressure sensor, the substrate having on its front a membrane, which is fixed at the edge of an opening that is etched free from the back. The process includes the following steps: providing a substrate; local thickening the substrate in an area on the front opposite the edge, the thickened portion having a continuous transition to the substrate; depositing a membrane layer on the front having the locally oxidized area; and etching free the opening from the back to clear the membrane in such a way that the edge is located underneath the thickened area.
摘要翻译：一种用于制造传感器膜基材的方法，特别是用于质量流量传感器或压力传感器的基片，该基底在其前面具有膜，该膜固定在从背面被免去蚀刻的开口的边缘处。该方法包括以下步骤：提供衬底; 在与边缘相对的前面的区域中局部加厚基底，加厚部分与基底有连续的过渡; 在前面沉积具有局部氧化区域的膜层; 并且从背面去除开口以使膜以使得边缘位于加厚区域下方的方式清除膜。

69. 发明授权

US06240777B1 Sensor having a membrane 失效
标题翻译：传感器有膜
公开(公告)号：US06240777B1
公开(公告)日：2001-06-05
申请号：US09168394
申请日：1998-10-06
申请人： Christoph Treutler , Herbert Goebel , Heribert Weber , Wolfgang Mueller , Steffen Schmidt , Klaus Heyers , Hans-Friedemann Kober , Werner Steiner
发明人： Christoph Treutler , Herbert Goebel , Heribert Weber , Wolfgang Mueller , Steffen Schmidt , Klaus Heyers , Hans-Friedemann Kober , Werner Steiner
IPC分类号： G01F168
CPC分类号： G01F1/6845 , G01F1/692
摘要： A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.
摘要翻译：传感器具有膜，至少一个电阻元件位于该膜上。膜具有由多个部分层构成的膜层。此外，提供由多个部分层组成的覆盖层。膜和覆盖层的部分层被选择为使得膜和覆盖层中的两者都具有轻的拉伸应力，拉伸应力优选地大致相同。

70. 发明授权

US09048247B2 Method for producing a metal structure in a semiconductor substrate 有权
标题翻译：在半导体基板中制造金属结构体的方法
公开(公告)号：US09048247B2
公开(公告)日：2015-06-02
申请号：US14306164
申请日：2014-06-16
申请人： Heribert Weber
发明人： Heribert Weber
IPC分类号： H01L21/20 , H01L21/44 , H01L49/02
CPC分类号： H01L28/60 , B81B7/0006 , H01L21/7682 , H01L21/76898 , H01L23/481 , H01L23/66 , H01L28/10 , H01L28/40 , H01L2924/0002 , H01L2924/00
摘要： A method for producing a metal structure in a semiconductor substrate includes: producing an opening in the rear side of the semiconductor substrate in the area of the metal structure to be produced, which extends to the front side layer structure; filling the opening at least partially with a metal so that a metal structure is created which extends from the rear side of the semiconductor substrate to the front side layer structure; masking the rear side of the semiconductor substrate for a trench process for exposing the metal structure in such a way that the trench mask includes a lattice structure in an area adjacent to the metal structure; producing an isolation trench adjacent to the metal structure, the metal structure acting as a lateral etch stop and the lattice structure being laterally undercut in the trench mask; and applying a sealing layer to the mask.
摘要翻译：在半导体衬底中制造金属结构体的方法包括：在要制造的金属结构的区域中，在半导体衬底的后侧产生延伸到前侧层结构的开口; 至少部分地用金属填充开口，从而形成从半导体衬底的后侧延伸到前侧层结构的金属结构; 掩蔽用于沟槽工艺的半导体衬底的背面，用于暴露金属结构，使得沟槽掩模在与金属结构相邻的区域中包括晶格结构; 产生与金属结构相邻的隔离沟槽，金属结构用作横向蚀刻停止层，并且栅格结构在沟槽掩模中横向底切; 以及向所述掩模施加密封层。

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