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61. 发明申请

US20100102407A1 MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：磁性元件及其制造方法
公开(公告)号：US20100102407A1
公开(公告)日：2010-04-29
申请号：US12556389
申请日：2009-09-09
申请人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
发明人： Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano , Kuniaki Sugiura
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08 , H01L43/12
摘要： A magnetoresistive element includes a stacked structure including a fixed layer having a fixed direction of magnetization, a recording layer having a variable direction of magnetization, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer, a first protective film covering a circumferential surface of the stacked structure, and made of silicon nitride, and a second protective film covering a circumferential surface of the first protective film, and made of silicon nitride. A hydrogen content in the first protective film is not more than 4 at %, and a hydrogen content in the second protective film is not less than 6 at %.
摘要翻译：磁阻元件包括堆叠结构，其包括具有固定磁化方向的固定层，具有可变磁化方向的记录层和夹在固定层和记录层之间的非磁性层，覆盖周向表面的第一保护膜层叠结构，由氮化硅制成，第二保护膜覆盖第一保护膜的周面，由氮化硅构成。第一保护膜中的氢含量不大于4原子％，第二保护膜中的氢含量不低于6原子％。

62. 发明申请

US20100097846A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：磁性元件和磁记忆
公开(公告)号：US20100097846A1
公开(公告)日：2010-04-22
申请号：US12563465
申请日：2009-09-21
申请人： Kuniaki Sugiura , Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano
发明人： Kuniaki Sugiura , Takeshi Kajiyama , Yoshiaki Asao , Shigeki Takahashi , Minoru Amano
IPC分类号： G11C11/02 , H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/12
摘要： A magnetic memory includes an interlayer insulation layer provided on a substrate, a conductive underlying layer provided on the interlayer insulation layer, and a magnetoresistive element provided on the underlying layer and including two magnetic layers and a nonmagnetic layer interposed between the magnetic layers. The underlying layer has an etching rate lower than an etching rate of each of the magnetic layers.
摘要翻译：磁存储器包括设置在基板上的层间绝缘层，设置在层间绝缘层上的导电性底层，以及设置在下层上的磁阻元件，并且包括两个磁性层和介于该磁性层之间的非磁性层。下层具有比每个磁性层的蚀刻速率低的蚀刻速率。

63. 发明授权

US07692902B2 Tunnel magnetoresistance effect device, and a portable personal device 有权
标题翻译：隧道磁阻效应器，以及便携式个人设备
公开(公告)号：US07692902B2
公开(公告)日：2010-04-06
申请号：US12031472
申请日：2008-02-14
申请人： Minoru Amano , Yoshiaki Saito
发明人： Minoru Amano , Yoshiaki Saito
IPC分类号： G11B5/39 , G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/228
摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.
摘要翻译：一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

64. 发明申请

US20090080239A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20090080239A1
公开(公告)日：2009-03-26
申请号：US12233121
申请日：2008-09-18
申请人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Katsuya Nishiyama , Tadashi Kai , Masahiko Nakayama , Makoto Nagamine , Minoru Amano , Masatoshi Yoshikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： G11C11/02 , G11B5/706 , G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , Y10S977/935
摘要： A magnetoresistive element includes a first reference layer having magnetic anisotropy perpendicular to a film surface, and an invariable magnetization, a recording layer having a stacked structure formed by alternately stacking magnetic layers and nonmagnetic layers, magnetic anisotropy perpendicular to a film surface, and a variable magnetization, and an intermediate layer provided between the first reference layer and the recording layer, and containing a nonmagnetic material. The magnetic layers include a first magnetic layer being in contact with the intermediate layer and a second magnetic layer being not in contact with the intermediate layer. The first magnetic layer contains an alloy containing cobalt (Co) and iron (Fe), and has a film thickness larger than that of the second magnetic layer.
摘要翻译：磁阻元件包括具有垂直于膜表面的磁各向异性的第一参考层和不变磁化，具有通过交替堆叠磁性层和非磁性层而形成的堆叠结构的记录层，垂直于膜表面的磁各向异性，以及可变的磁化，以及设置在第一参考层和记录层之间并包含非磁性材料的中间层。磁性层包括与中间层接触的第一磁性层和不与中间层接触的第二磁性层。第一磁性层含有含有钴（Co）和铁（Fe）的合金，其膜厚大于第二磁性层的厚度。

65. 发明授权

US07266011B2 Magneto-resistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07266011B2
公开(公告)日：2007-09-04
申请号：US11368496
申请日：2006-03-07
申请人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
发明人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.
摘要翻译：磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

66. 发明授权

US07054187B2 Magnetic memory 有权
公开(公告)号：US07054187B2
公开(公告)日：2006-05-30
申请号：US10981508
申请日：2004-11-05
申请人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
发明人： Tatsuya Kishi , Minoru Amano , Yoshiaki Saito , Shigeki Takahashi , Katsuya Nishiyama , Yoshiaki Asao , Hiroaki Yoda , Tomomasa Ueda , Yoshihisa Iwata
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first writing wiring extending in a first direction on or below the magnetoresistance effect element, a center of gravity of an axial cross section of the wiring being apart from a center of thickness at the center of gravity, and the center of gravity being eccentric toward the magnetoresistance effect element; and a writing circuit configured to pass a current through the first writing wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

67. 发明授权

US07038939B2 Magneto-resistance effect element and magnetic memory 失效
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07038939B2
公开(公告)日：2006-05-02
申请号：US10696000
申请日：2003-10-30
申请人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
发明人： Minoru Amano , Tatsuya Kishi , Sumio Ikegawa , Yoshiaki Saito , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/15
摘要： The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.
摘要翻译：磁存储器包括多个存储单元，每个存储单元包括：至少一个写入线; 至少一个数据存储部分，设置在所述书写线的外周的至少一部分上，所述至少一个数据存储部分包括铁磁材料，所述铁磁材料的磁化方向可以通过使电流在所述书写线中流动而被反转; 以及设置在所述数据存储部附近的至少一个感应所述数据存储部的磁化方向的磁阻效应元件。

68. 发明授权

US06958932B2 Semiconductor integrated circuit device and method of manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US06958932B2
公开(公告)日：2005-10-25
申请号：US10199176
申请日：2002-07-22
申请人： Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
发明人： Keiji Hosotani , Yoshiaki Asao , Yoshiaki Saito , Minoru Amano , Shigeki Takahashi , Tatsuya Kishi , Yoshihisa Iwata
IPC分类号： H01L27/105 , H01L21/768 , H01L21/8246 , H01L27/22 , H01L43/08 , G11C17/14
CPC分类号： H01L27/228 , B82Y10/00 , H01L21/76895 , H01L43/08
摘要： A semiconductor integrated circuit device includes a cell transistor; a bit line provided above the cell transistor; a magnetoresistive element provided above the bit line, a first end portion of the magnetoresistive element being electrically connected to the bit line; an intracell local interconnection provided above the magnetoresistive element, the intracell local interconnection coupling one of source and drain regions of the cell transistor to a second end portion of the magnetoresistive element; and a write word line provided above the intracell local interconnection, a portion between the write word line and the intracell local interconnection being filled with an insulator alone.
摘要翻译：半导体集成电路器件包括单元晶体管; 设置在单元晶体管上方的位线; 设置在所述位线上方的磁阻元件，所述磁阻元件的第一端部电连接到所述位线; 设置在磁阻元件上方的电池内局部互连，将电池晶体管的源极和漏极区域中的一个耦合到磁阻元件的第二端部的电池内局部互连; 以及设置在电池内局部互连之上的写入字线，写入字线和单元间局部互连之间的一部分仅用绝缘体填充。

69. 发明授权

US06900490B2 Magnetic random access memory 失效
标题翻译：磁性随机存取存储器
公开(公告)号：US06900490B2
公开(公告)日：2005-05-31
申请号：US10649986
申请日：2003-08-28
申请人： Yoshiaki Asao , Hiroaki Yoda , Minoru Amano , Tomomasa Ueda
发明人： Yoshiaki Asao , Hiroaki Yoda , Minoru Amano , Tomomasa Ueda
IPC分类号： G11C11/15 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/22 , H01L29/76 , H01L43/08
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/228
摘要： In a magnetic random access memory for generating an inductive magnetic flux by passing current into write wirings disposed closely to MTJ elements, whose resistance values varying depending on the magnetization array state of two magnetic layers of MTJ elements including two magnetic layers that hold a non-magnetic layer correspond to the stored information of “0”/“1”, and writing information by varying the magnetization direction of a free layer of the MTJ elements, the shape of the MTJ elements is warped so as to coincide substantially with the magnetic field curve generated from the write wirings.
摘要翻译：在磁性随机存取存储器中，用于通过将电流传递到靠近MTJ元件布置的写布线中来产生感应磁通量，其电阻值根据包括两个磁性层的MTJ元件的两个磁性层的磁化阵列状态而变化，磁性层对应于“0”/“1”的存储信息，并且通过改变MTJ元件的自由层的磁化方向来写入信息，MTJ元件的形状被扭曲以与磁场大体一致从写布线产生的曲线。

70. 发明申请

US20050088788A1 Magnetoresistive effect element and magnetic memory having the same 有权
公开(公告)号：US20050088788A1
公开(公告)日：2005-04-28
申请号：US10976840
申请日：2004-11-01
申请人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
发明人： Katsuya Nishiyama , Yoshiaki Saito , Minoru Amano
IPC分类号： G11C11/15 , G11C11/16 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/33 , G11B5/127
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/224 , H01L27/228 , Y10T428/1114
摘要： There are provided a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magnetoresistive effect element includes: a storage layer formed by stacking a plurality of ferromagnetic layers via non-magnetic layers; a magnetic film having at least one ferromagnetic layer; and a tunnel barrier layer provided between the storage layer and the magnetic film. Each of the ferromagnetic layers of the storage layer is formed of an Ni—Fe—Co ternary alloy which has a composition selected from one of a composition region surrounded by a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %), a straight line of Fe80(at %)Ni20(at %)—Fe30(at %)Ni70(at %) and a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), and a composition region surrounded by a straight line of Fe80(at %)Ni20(at %)—Co65(at %)Ni35(at %), a straight line of Co90(at %)Fe10(at %)—Fe70(at %)Ni30(at %) and a straight line of Co90(at %)Fe10(at %)—Fe30(at %)Ni70(at %). A maximum surface roughness on each of an interface between the storage layer and the tunnel barrier layer and an interface between the magnetic film and the tunnel barrier layer is 0.4 nm or less.

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