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61. 发明申请

US20080225583A1 Spin transfer MRAM device with novel magnetic free layer 有权
标题翻译：具有新颖无磁性层的自旋转移MRAM器件
公开(公告)号：US20080225583A1
公开(公告)日：2008-09-18
申请号：US11717347
申请日：2007-03-13
申请人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
发明人： Yimin Guo , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11C11/15 , H01L21/00
CPC分类号： G11C11/16 , Y10S977/935
摘要： We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.
摘要翻译：我们描述了利用自旋角动量转移作为改变自由层的磁矩方向的机制的CPP MTJ MRAM元件。该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用包含被CoFeB层夹在中间的Ta或Hf薄层的新型自由层。该装置的特征在于DR / R的值在大约95％和105％之间。

62. 发明授权

US07423848B2 Process and structure to fabricate CPP spin valve heads for ultra-high recording density 失效
标题翻译：制造用于超高记录密度的CPP自旋阀头的工艺和结构
公开(公告)号：US07423848B2
公开(公告)日：2008-09-09
申请号：US11881628
申请日：2007-07-27
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3948 , H01F10/3259 , H01F10/3263 , H01F41/306 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering gas during deposition. Oxygen doped CoFe free and pinned layers are made slightly thicker to offset a small decrease in magnetic moment caused by the oxygen dopant. Incorporating oxygen in the MnPt AFM layer enhances the exchange bias strength. An insertion layer such as a nano-oxide layer is included in one or more of the free, pinned, and spacer layers to increase interfacial scattering. The thickness of all layers except the copper spacer may be increased to enhance bulk scattering. A CPP-GMR single or dual spin valve of the present invention has up to a threefold increase in resistance and a 2 to 3% increase in MR ratio.
摘要翻译：公开了具有改进的MR比和增加的电阻的CPP-GMR自旋值传感器结构。除了某些被钉扎层，铜间隔物和Ta覆盖层之外的所有层通过在沉积期间向Ar溅射气体添加部分O 2 O 2压力而进行氧掺杂。氧掺杂的CoFe自由和被钉扎层被制成稍微更厚以抵消由氧掺杂剂引起的小的磁矩的减小。在MnPt AFM层中掺入氧增强了交换偏压强度。诸如纳米氧化物层之类的插入层被包括在一个或多个游离，钉扎和间隔层中以增加界面散射。除了铜间隔物之外的所有层的厚度可以增加以增加体散射。本发明的CPP-GMR单自旋阀或双自旋阀的电阻增加了三倍，MR比增加了2〜3％。

63. 发明授权

US07234228B2 Method of fabricating novel seed layers for fabricating spin valve heads 有权
标题翻译：制造旋转阀头的新种子层的方法
公开(公告)号：US07234228B2
公开(公告)日：2007-06-26
申请号：US10308597
申请日：2002-12-03
申请人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Trong
发明人： Cheng T. Horng , Hui-Chuan Wang , Ru-Ying Tong , Chyu-Jiuh Trong
IPC分类号： G11B5/187 , G11B5/39
CPC分类号： B82Y10/00 , G11B5/3906 , Y10T29/49032 , Y10T29/49034 , Y10T29/49037 , Y10T29/49044 , Y10T428/1121 , Y10T428/115 , Y10T428/12778
摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.
摘要翻译：一种形成具有新型种子层和合成反铁磁固定层的底部自旋阀传感器元件的方法。该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

64. 发明授权

US06993827B2 Method of making a bottom spin valve 失效
标题翻译：制造底部旋转阀的方法
公开(公告)号：US06993827B2
公开(公告)日：2006-02-07
申请号：US10460086
申请日：2003-06-12
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/187
CPC分类号： G11B5/3906 , G11B7/0053 , Y10T29/49021 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49052
摘要： Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin (
摘要翻译：提供底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型的GMR传感器的两个实施例及其制造方法。在一个实施例中，传感器具有超薄（<20埃）单自由层和复合高电导层（HCL），提供高输出，低矫顽力和正磁致伸缩。在第二实施例中，传感器具有复合自由层和单个HCL，其也具有高输出，低矫顽力和正磁致伸缩。这些传感器能够读取超过60Gb / in <2>的密度。

65. 发明申请

US20130175644A1 Spin Torque Transfer Magnetic Tunnel Junction Fabricated with a Composite Tunneling Barrier Layer 有权
标题翻译：旋转扭矩传递磁隧道结与复合隧道屏障层
公开(公告)号：US20130175644A1
公开(公告)日：2013-07-11
申请号：US13344292
申请日：2012-01-05
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： H01L29/82 , H01L21/8246 , B82Y99/00
CPC分类号： H01L43/12 , B82Y40/00 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H01F41/305 , H01L27/228 , H01L43/08
摘要： A STT-RAM MTJ is disclosed with a composite tunnel barrier comprised of a CoMgO layer that contacts a pinned layer and a MgO layer which contacts a free layer. A CoMg layer with a Co content between 20 and 40 atomic % is deposited on the pinned layer and is then oxidized to produce Co nanoconstrictions within a MgO insulator matrix. The nanoconstrictions control electromigration of Co into an adjoining MgO layer. The free layer may comprise a nanocurrent channel (NCC) layer such as FeSiO or a moment dilution layer such as Ta between two ferromagnetic layers. Furthermore, a second CoMgO layer or a CoMgO/MgO composite may serve as a perpendicular Hk enhancing layer formed between the free layer and a cap layer. One or both of the pinned layer and free layer may exhibit in-plane anisotropy or perpendicular magnetic anisotropy.
摘要翻译：公开了具有由接触被钉扎层的CoMgO层和接触自由层的MgO层组成的复合隧道势垒的STT-RAM MTJ。将钴含量为20至40原子％的CoMg层沉积在钉扎层上，然后被氧化以在MgO绝缘体基体内产生Co纳米收缩。纳米监测将Co的电迁移控制到相邻的MgO层中。自由层可以包括纳米电流通道（NCC）层，例如FeSiO或在两个铁磁层之间的诸如Ta之间的力矩稀释层。此外，第二CoMgO层或CoMgO / MgO复合物可以用作在自由层和盖层之间形成的垂直Hk增强层。被钉扎层和自由层中的一个或两个可以表现出面内各向异性或垂直磁各向异性。

66. 发明授权

US08470462B2 Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions 有权
标题翻译：在CoFe（B）/ MgO / CoFe（B）磁隧道结中增强界面垂直各向异性的结构和方法
公开(公告)号：US08470462B2
公开(公告)日：2013-06-25
申请号：US12927939
申请日：2010-11-30
申请人： Cheng T. Horng , Ru-Ying Tong , Guenole Jan
发明人： Cheng T. Horng , Ru-Ying Tong , Guenole Jan
IPC分类号： G11B5/706 , H01L43/08 , G01R33/09 , G11C11/16
CPC分类号： C23C14/3414 , B82Y40/00 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.
摘要翻译：公开了具有通过自然氧化工艺形成的MgO隧道势垒的STT-RAM MTJ。使用NCO是由Fe（20％） - SiO 2制成的纳米电流通道层的Co10Fe70B20 / NCC / Co10Fe70B20，Co10Fe70B20 / NCC / Co10Fe70B20 / NCC或Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20自由层配置，以使Jc0最小化实现满足64Mb设计要求的更高的热稳定性，写电压，读电压，Ho和Hc值。 NCC层的厚度约为10埃，以符合最小Fe（Si）晶粒直径尺寸。 MTJ在约330℃的温度下退火，以保持高的磁阻比，同时使自由层的Hk⊥（界面）最大化，从而降低Heff并降低开关电流。 Co10Fe70B20层用低压工艺溅射沉积，功率约为15瓦，Ar流速为40标准立方厘米每分钟，以降低自由层的Heff。

67. 发明授权

US08372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
标题翻译：用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US08372661B2
公开(公告)日：2013-02-12
申请号：US11981127
申请日：2007-10-31
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L21/00
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

68. 发明授权

US07948044B2 Low switching current MTJ element for ultra-high STT-RAM and a method for making the same 有权
标题翻译：用于超高STT-RAM的低开关电流MTJ元件及其制造方法
公开(公告)号：US07948044B2
公开(公告)日：2011-05-24
申请号：US12082155
申请日：2008-04-09
申请人： Cheng T. Horng , Ru-Ying Tong , Yimin Guo
发明人： Cheng T. Horng , Ru-Ying Tong , Yimin Guo
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/12 , Y10S977/883
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R is disclosed. The MTJ has a MgO tunnel barrier formed by natural oxidation to achieve a low RA, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel layer to minimize Jc0. There is a thin Ru capping layer for a spin scattering effect. The reference layer has a shape anisotropy and Hc substantially greater than that of the free layer to establish a “self-pinned” state. The free layer, capping layer and hard mask are formed in an upper section of a nanopillar that has an area substantially less than a lower pedestal section which includes a bottom electrode, reference layer, seed layer, and tunnel barrier layer. The reference layer is comprised of an enhanced damping constant material that may be an insertion layer, and the free layer has a low damping constant.
摘要翻译：公开了一种在实现高dR / R的同时使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有通过自然氧化形成的MgO隧道势垒以实现低RA，以及具有中间纳米通道层的CoFeB / FeSiO / CoFeB复合自由层以使Jc0最小化。有一个薄的Ru覆盖层用于自旋散射效应。参考层具有形状各向异性，并且Hc基本上大于自由层的Hc以形成“自固定”状态。自由层，覆盖层和硬掩模形成在纳米柱的上部，其具有基本上小于包括底部电极，参考层，种子层和隧道势垒层的下基座部分的面积。参考层由增强的阻尼常数材料组成，其可以是插入层，并且自由层具有低阻尼常数。

69. 发明授权

US07936539B2 Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers 有权
标题翻译：底部自旋阀GMR传感器结合了多个氧表面活性剂层
公开(公告)号：US07936539B2
公开(公告)日：2011-05-03
申请号：US11717973
申请日：2007-03-14
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , Y10T29/49044
摘要： A bottom spin-valve GMR sensor has been fabricated that has ultra-thin layers of high density and smoothness. In addition, these layers are inherently furnished with sub-monolayer thick oxygen surfactant layers. The sensor is fabricated using a method in which the layers are sputtered in a mixture of Ar and O2. A particularly novel feature of the method is the use of a sputtering chamber with an ultra-low base pressure and correspondingly ultra-low pressure mixtures of Ar and O2 sputtering gas (
摘要翻译：已经制造了具有高密度和平滑度的超薄层的底部自旋阀GMR传感器。此外，这些层本质上具有亚单层厚氧表面活性剂层。传感器使用其中层以Ar和O2的混合物溅射的方法制造。该方法的一个特别新颖的特征是使用具有超低基础压力的溅射室和相应的Ar和O 2溅射气体（<0.5毫托）的超低压混合物，其中混合的氧气的分压较小比5×10-9乇。

70. 发明申请

US20110014500A1 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US20110014500A1
公开(公告)日：2011-01-20
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , C23C14/34 , B44C1/22
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

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