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    • 61. 发明授权
    • Magnetic field sensors
    • 磁场传感器
    • US06580271B2
    • 2003-06-17
    • US09734813
    • 2000-12-11
    • Yi-Qun LiXiao-Dong Xiang
    • Yi-Qun LiXiao-Dong Xiang
    • G01R3300
    • G01R33/18G01R33/02
    • Methods and systems for estimating a value of a static or time varying magnetic field that is present. In a first embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoresistive (PZR) material are combined and exposed to the unknown magnetic field, and a current source and charge-carrying line are connected between two spaced apart locations in the PZR layer. A meter measures a voltage difference or current between the two locations and estimates the value of the magnetic field. In a second embodiment, a layer of a magnetostrictive (MNS) material and a layer of a piezoelectric (PZT) material are combined and exposed to a combination of the unknown magnetic field and a selected time varying magnetic field. A meter measures a voltage change, current change or other electrical variable between two spaced apart locations at two or more selected times and estimates the value of the unknown magnetic field. The layers of MNS, PZR and/or PZT material may be planar or may be selected annular sectors or cylindrical sectors.
    • 用于估计存在的静态或时变磁场的值的方法和系统。 在第一实施例中,磁致伸缩(MNS)材料层和压阻(PZR)材料层被组合并暴露于未知磁场,并且电流源和充电线连接在两个间隔开的位置 在PZR层。 仪表测量两个位置之间的电压差或电流,并估计磁场的值。 在第二实施例中,将磁致伸缩(MNS)材料层和压电(PZT)材料层组合并暴露于未知磁场和选定的时变磁场的组合。 一个仪表在两个或多个选定的时间测量两个间隔开的位置之间的电压变化,电流变化或其他电气变量,并估计未知磁场的值。 MNS,PZR和/或PZT材料的层可以是平面的或可以是选择的环形扇形或圆柱形扇形。
    • 66. 发明授权
    • Coherent spin valve and related devices
    • 相干自旋阀及相关装置
    • US08049996B2
    • 2011-11-01
    • US12236327
    • 2008-09-23
    • Haitao YangXiao-Dong Xiang
    • Haitao YangXiao-Dong Xiang
    • G11B5/39H01L29/82
    • G06N99/002B82Y10/00B82Y25/00G11B5/3903H01F10/1936H01F10/3268H01F10/329Y10S977/933Y10T428/1107
    • Embodiments of the present invention are directed toward the field of spintronics, and in particular, systems and devices capable of performing spin coherent quantum logic operations. The inventive spin valve comprises two ferromagnetic electrode layers, and a non-magnetic conducting layer positioned therebetween. An external magnetic field B0 is applied in the Z direction, such that the two electrode layers are each magnetized in a direction substantially parallel to the external magnetic field. Rather than attempting to change the magnetization of one of the ferromagnetic layers, as is the case in prior art technologies, it is the direction of the electron spin that is manipulated in the present embodiments while the electron is traveling through the middle, nonmagnetic layer. One of the ferromagnetic electrodes may be the tip of a scanning tunneling microscope (STM). This configuration may further comprise a bias voltage source connected between the STM tip and the other ferromagnetic electrode, such that a spin polarized tunneling current is conducted between the two.
    • 本发明的实施例涉及自旋电子学领域,特别是能够执行自相关量子逻辑运算的系统和装置。 本发明的自旋阀包括两个铁磁电极层和位于它们之间的非磁性导电层。 在Z方向上施加外部磁场B0,使得两个电极层在大致平行于外部磁场的方向上各自被磁化。 与现有技术中的情况一样,不是试图改变铁磁层之一的磁化,而是在电子行进通过中间非磁性层时在本实施例中操纵的电子自旋的方向。 铁磁电极之一可以是扫描隧道显微镜(STM)的尖端。 该配置还可以包括连接在STM尖端和另一个铁磁电极之间的偏置电压源,使得在两者之间进行自旋极化隧穿电流。
    • 68. 发明申请
    • ANALYTICAL SCANNING EVANESCENT MICROWAVE MICROSCOPE AND CONTROL STAGE
    • 分析扫描历史微波微波和控制阶段
    • US20090302866A1
    • 2009-12-10
    • US12465022
    • 2009-05-13
    • Xiao-Dong XiangChen GaoFred DuewerHai Tao YangYalin Lu
    • Xiao-Dong XiangChen GaoFred DuewerHai Tao YangYalin Lu
    • G01R27/04G01R1/06
    • G01Q60/22
    • A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.
    • 公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜(SEMM)。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数,损耗角正切,电导率,电阻抗等电参数的能力。 然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围(从微米到纳米)之间提供距离控制,其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布, 非线性介质和导电材料。 本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。
    • 69. 发明授权
    • Analytical scanning evanescent microwave microscope and control stage
    • 分析扫描渐逝微波显微镜和控制阶段
    • US07550963B1
    • 2009-06-23
    • US09608311
    • 2000-06-30
    • Xiao-Dong XiangChen GaoFred DuewerHai Tao YangYalin Lu
    • Xiao-Dong XiangChen GaoFred DuewerHai Tao YangYalin Lu
    • G01R27/00
    • G01Q60/22
    • A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.
    • 公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜(SEMM)。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数,损耗角正切,电导率,电阻抗等电参数的能力。 然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围(从微米到纳米)之间提供距离控制,其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布, 非线性介质和导电材料。 本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。