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61. 发明授权

US10263157B2 Light-emitting diode with transparent conductive electrodes for improvement in light extraction efficiency 有权
公开(公告)号：US10263157B2
公开(公告)日：2019-04-16
申请号：US15629106
申请日：2017-06-21
申请人： Tae Yeon Seong , Dae-Hyun Kim , Byoungjun Choi
发明人： Tae Yeon Seong , Dae-Hyun Kim , Byoungjun Choi
IPC分类号： H01L33/42 , H01L33/06 , H01L33/40 , H01L33/22 , H01L33/30 , H01L33/14 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/44
摘要： A light-emitting diode device may include a conductive substrate, a metal reflection layer provided on the conductive substrate, a transparent insulating layer provided on the metal reflection layer, an n ohmic contact plug provided in a lower portion of each of through holes formed in the transparent insulating layer, an n-type gallium arsenide (GaAs) plug provided in an upper portion of the through hole, an n cladding layer provided on the transparent insulating layer, an active layer provided on the n cladding layer, a p cladding layer provided on the active layer, a p-type GaP window layer provided on the p cladding layer, a p ohmic contact pattern provided on the p-type GaP window layer, a transparent conductive metal oxide pattern provided on the p ohmic contact layer, and a p electrode pad provided on the transparent conductive metal oxide.

62. 发明授权

US08202751B2 Flip-chip light emitting diodes and method of manufacturing thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US08202751B2
公开(公告)日：2012-06-19
申请号：US12926638
申请日：2010-12-01
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L21/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在包装发光器件时的产量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

63. 发明授权

US07964889B2 Nitride-based light-emitting device and method of manufacturing the same 有权
标题翻译：氮化物系发光元件及其制造方法
公开(公告)号：US07964889B2
公开(公告)日：2011-06-21
申请号：US12335845
申请日：2008-12-16
申请人： June-o Song , Tae-yeon Seong
发明人： June-o Song , Tae-yeon Seong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.
摘要翻译：提供了一种氮化物系发光器件及其制造方法，该氮化物系发光器件包括由比氧化铟锡更高的功函数的透明导电氧化物制成的透明电极。氮化物系发光器件具有基板，n型覆盖层，有源层，p型覆盖层和欧姆接触层的顺序层叠结构。欧姆接触层形成为具有比铟锡氧化物更高的功函数的透明导电氧化物或由掺杂有金属掺杂剂的透明导电氧化物制成的膜制成的膜。因此，与p型覆盖层的欧姆接触特性提高，从而确保优异的电流 - 电压特性。此外，透明电极的高透光率可以提高器件的发光效率。

64. 发明授权

US07960746B2 Low resistance electrode and compound semiconductor light emitting device including the same 失效
标题翻译：低电阻电极和包括其的化合物半导体发光器件
公开(公告)号：US07960746B2
公开(公告)日：2011-06-14
申请号：US10979240
申请日：2004-11-03
申请人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
发明人： Joon-seop Kwak , Tae-yeon Seong , Jae-hee Cho , June-o Song , Dong-seok Leem , Hyun-soo Kim
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L23/40 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/44
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/0095 , H01L33/32
摘要： A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
摘要翻译：提供一种低电阻电极和包括该低电阻电极的化合物半导体发光器件。沉积在包括n型半导体层，有源层和p型半导体层的化合物半导体发光器件的p型半导体层上的低电阻电极包括：设置在p型半导体层上的反射电极反射从有源层发射的光; 以及设置在反射电极层上的防结块电极，以防止在退火过程中反射电极层的聚集。

65. 发明申请

US20110114984A1 SUPPORTING SUBSTRATE FOR MANUFACTURING VERTICALLY-STRUCTURED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE SUPPORTING SUBSTRATE 有权
标题翻译：用于制造垂直结构的半导体发光器件的支撑衬底和使用支撑衬底的半导体发光器件
公开(公告)号：US20110114984A1
公开(公告)日：2011-05-19
申请号：US13054472
申请日：2009-07-15
申请人： Tae Yeon Seong
发明人： Tae Yeon Seong
IPC分类号： H01L33/10 , H01L29/30 , H01L33/62
CPC分类号： H01L33/0079 , H01L21/76254 , H01L33/007 , H01L33/40 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention is related to a supporting substrate for manufacturing vertically-structured semiconductor light emitting device and a vertically-structured semiconductor light emitting device using the same, which minimize damage and breaking of a multi-layered light-emitting structure thin film separated from a sapphire substrate during the manufacturing process, thereby improving the whole performance of the semiconductor light emitting device.The supporting substrate for manufacturing the vertically-structured semiconductor light emitting device of the present invention comprises: a selected supporting substrate formed of a material having a difference of thermal expansion coefficient of 5 ppm or less from a sapphire substrate on which a multi-layered light-emitting structure thin film comprising a Group III-V nitride-based semiconductor is laminated; a sacrificial layer formed on the selected supporting substrate; a thick metal film formed on an upper part of the sacrificial layer; and a bonding layer formed on an upper part of the thick metal layer and formed of a soldering or brazing alloy material.
摘要翻译：本发明涉及用于制造垂直构造的半导体发光器件的支撑衬底和使用该支撑衬底的垂直构造的半导体发光器件，其使从与之相隔离的多层发光结构薄膜的损伤和断裂最小化蓝宝石衬底，从而提高半导体发光器件的整体性能。用于制造本发明的垂直构造的半导体发光器件的支撑衬底包括：由蓝宝石衬底的热膨胀系数为5ppm以下的材料形成的选择的支撑衬底，其中多层光层叠由III-V族氮化物类半导体构成的发光结构薄膜; 形成在所选择的支撑衬底上的牺牲层; 形成在牺牲层的上部的厚金属膜; 以及形成在厚金属层的上部并由焊接或钎焊合金材料形成的接合层。

66. 发明授权

US07880176B2 Top-emitting light emitting diodes and methods of manufacturing thereof 有权
标题翻译：顶部发光二极管及其制造方法
公开(公告)号：US07880176B2
公开(公告)日：2011-02-01
申请号：US11632183
申请日：2005-07-22
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： Provided are a top-emitting nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：本发明提供一种具有依次层叠的n型覆盖层，有源层和p型覆盖层的顶部发射氮化物系发光器件，其包含在p型覆盖层上形成的界面改性层和透明导电薄膜层，由形成在界面改性层上的透明导电材料构成; 及其制备方法。根据本发明的顶部发光氮化物系发光器件及其制备方法，提供了与p型覆盖层的欧姆接触改善的优点，从而提高引线键合效率和产率在包装发光器件时，能够通过低比接触电阻和优异的电流 - 电压特性提高器件的发光效率和使用寿命。

67. 发明授权

US07872271B2 Flip-chip light emitting diodes and method of manufacturing thereof 有权
标题翻译：倒装芯片发光二极管及其制造方法
公开(公告)号：US07872271B2
公开(公告)日：2011-01-18
申请号：US11632279
申请日：2005-07-12
申请人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
发明人： Tae-Yeon Seong , June-O Song , Kyoung-Kook Kim , Woong-Ki Hong
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a flip-chip nitride-based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising a reflective layer formed on the p-type clad layer and at least one transparent conductive thin film layer made up of transparent conductive materials capable of inhibiting diffusion of materials constituting the reflective layer, interposed between the p-type clad layer and reflective layer; and a process for preparing the same. In accordance with the flip-chip nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact properties with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties.
摘要翻译：提供了一种倒装芯片氮化物基发光器件，其具有依次层叠在其上的n型覆盖层，有源层和p型覆盖层，包括形成在p型覆盖层上的反射层和至少一个透明导电薄膜层，其由能够抑制构成反射层的材料的扩散的透明导电材料构成，插入在p型覆盖层和反射层之间; 及其制备方法。根据本发明的倒装氮化物基发光器件及其制备方法，提供了与p型覆盖层的欧姆接触特性提高的优点，从而提高引线接合效率，在包装发光器件时的产量，由于低比接触电阻和优异的电流 - 电压特性，能够提高器件的发光效率和寿命。

68. 发明授权

US07736924B2 Multiple reflection layer electrode, compound semiconductor light emitting device having the same and methods of fabricating the same 有权
公开(公告)号：US07736924B2
公开(公告)日：2010-06-15
申请号：US12458136
申请日：2009-07-01
申请人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
发明人： June-o Song , Tae-yeon Seong , Kyoung-kook Kim , Hyun-gi Hong , Kwang-ki Choi , Hyun-soo Kim
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

69. 发明申请

US20080258174A1 Optical Device and Method of Fabricating the Same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US20080258174A1
公开(公告)日：2008-10-23
申请号：US12097359
申请日：2006-12-15
申请人： Tae-Yeon Seong
发明人： Tae-Yeon Seong
IPC分类号： H01L29/40 , H01L21/283
CPC分类号： H01L33/42 , H01B1/08 , H01L31/022466 , H01L33/32
摘要： Disclosed is an optical device including an optical member and a contact layer stacked on at least one of top and bottom surfaces of the optical member. The contact layer has at least one transparent conducting oxynitride (TCON) layer. The TCON consists of at least one of indium (In), tin (Sn), zinc (Zn), cadmium (Cd), gallium (Ga), aluminum (Al), magnesium (Mg), titanium (Ti), molybdenum (Mo), nickel (Ni), copper (Cu), silver (Ag), gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), and palladium (Pd).
摘要翻译：公开了一种光学装置，其包括光学构件和层叠在光学构件的顶表面和底表面中的至少一个上的接触层。接触层具有至少一个透明导电氮氧化物（TCON）层。 TCON由铟（In），锡（Sn），锌（Zn），镉（Cd），镓（Ga），铝（Al），镁（Mg），钛（Ti） Mo），镍（Ni），铜（Cu），银（Ag），金（Au），铂（Pt），铑（Rh），铱（Ir），钌（Ru）和钯（Pd）。

70. 发明申请

US20070254391A1 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20070254391A1
公开(公告)日：2007-11-01
申请号：US11714843
申请日：2007-03-07
申请人： June-o Song , Dong-seok Leem , Tae-yeon Seong
发明人： June-o Song , Dong-seok Leem , Tae-yeon Seong
IPC分类号： H01L21/02
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42 , H01L2933/0016
摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.
摘要翻译：提供一种发光器件及其制造方法。发光器件具有依次层叠基板，n型覆盖层，发光层，p型覆盖层，欧姆接触层和反射层的结构。通过向氧化铟中加入附加元素来形成欧姆接触层。根据发光器件及其制造方法，提高了与p型覆盖层的欧姆接触的特性，从而提高了包装FCLEDS期间引线接合的效率和产率。此外，由于低的非接触电阻和优异的电流和电压特性，可以提高发光器件的发光效率和寿命。

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