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61. 发明授权

US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
标题翻译：通过控制相对电极之间的RF相位，晶片上的等离子体工艺均匀性
公开(公告)号：US08076247B2
公开(公告)日：2011-12-13
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

62. 发明授权

US08058156B2 Plasma immersion ion implantation reactor having multiple ion shower grids 有权
标题翻译：具有多个离子淋浴网格的等离子体浸没离子注入反应器
公开(公告)号：US08058156B2
公开(公告)日：2011-11-15
申请号：US10895784
申请日：2004-07-20
申请人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
发明人： Hiroji Hanawa , Tsutomu Tanaka , Kenneth S. Collins , Amir Al-Bayati , Kartik Ramaswamy , Andrew Nguyen
IPC分类号： H01L21/425
CPC分类号： H01J37/32357 , C23C14/046 , C23C14/48 , C23C16/045 , H01J37/32412
摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, the plural orifices oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the closest one of the plural ion shower grids, and furnishing the selected species into the ion generation region. The process further includes evacuating the process region, and applying plasma source power to generate a plasma of the selected species in the ion generation region. The process also includes applying successive grid potentials to successive ones of the grids and applying a bias potential to the workpiece. The combination of the grid and bias potentials corresponds to the desired ion implantation depth profile in the workpiece.
摘要翻译：在具有一组多个并联离子淋浴网格的反应室中进行用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入方法，该多个平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴栅格具有从栅格到栅格相互配准的多个孔，多个孔相对于各个离子喷淋栅格的表面平行于非平行方向。该工艺包括将工件放置在工艺区域中，工件具有大致面对多个离子淋浴栅格中最接近的一个的表面的工件表面，并将所选择的物质提供到离子产生区域中。该方法还包括抽空处理区域，以及施加等离子体源功率以在离子产生区域中产生所选物种的等离子体。该过程还包括将连续的栅格电势施加到连续的栅格并向工件施加偏置电位。栅格和偏置电位的组合对应于工件中期望的离子注入深度分布。

63. 发明申请

US20110256691A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 审中-公开
标题翻译：从基板上去除表面掺杂物
公开(公告)号：US20110256691A1
公开(公告)日：2011-10-20
申请号：US13168738
申请日：2011-06-24
申请人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
发明人： Kartik Ramaswamy , Kenneth S. Collins , Biagio Gallo , Hiroji Hanawa , Majeed A. Foad , Martin A. Hilkene , Kartik Santhanam , Matthew D. Scotney-Castle
IPC分类号： H01L21/322
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

64. 发明授权

US08034734B2 Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus 有权
标题翻译：由氧化钇和氧化锆形成的半导体处理装置，以制造固溶陶瓷装置
公开(公告)号：US08034734B2
公开(公告)日：2011-10-11
申请号：US12660068
申请日：2010-02-19
申请人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Jie Yuan , Li Xu , Kenneth S. Collins
IPC分类号： C04B35/505 , C04B35/486
CPC分类号： C04B35/505 , B32B18/00 , C04B35/486 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3229 , C04B2235/3244 , C04B2235/6582 , C04B2235/668 , C04B2235/762 , C04B2235/80 , C04B2235/9669 , H01J37/32467 , H01J37/32504 , Y10T428/31678
摘要： A solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. In a first embodiment, the ceramic article includes ceramic which is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
摘要翻译：用于半导体加工的固体溶液陶瓷制品，其耐受含卤素等离子体侵蚀。含固溶体的陶瓷制品由氧化钇和氧化锆的组合形成。在第一个实施方案中，陶瓷制品包括由摩尔浓度为约90摩尔％至约70摩尔％的氧化钇形成的陶瓷，摩尔浓度为约10摩尔％至约30摩尔％的氧化锆，。在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇。

65. 发明授权

US08002945B2 Method of plasma load impedance tuning for engineered transients by synchronized modulation of an unmatched low power RF generator 有权
标题翻译：通过不匹配的低功率RF发生器的同步调制，设计瞬变的等离子体负载阻抗调谐方法
公开(公告)号：US08002945B2
公开(公告)日：2011-08-23
申请号：US12129024
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： C23F1/00
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/321 , H01J37/32183 , H01J37/32935
摘要： A method is provided in plasma processing of a workpiece for stabilizing the plasma against engineered transients in applied RF power, by modulating an unmatched low power RF generator in synchronism with the transient.
摘要翻译：提供了一种用于通过与瞬态同步调制不匹配的低功率RF发生器的工件的等离子体处理中的方法来稳定等离子体以应用RF功率中的设计瞬变的方法。

66. 发明申请

US20100248488A1 PULSED PLASMA HIGH ASPECT RATIO DIELECTRIC PROCESS 有权
标题翻译：脉冲等离子高比例电介质工艺
公开(公告)号：US20100248488A1
公开(公告)日：2010-09-30
申请号：US12711061
申请日：2010-02-23
申请人： Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
发明人： Ankur Agarwal , Kenneth S. Collins , Shahid Rauf , Kartik Ramaswamy , Thorsten B. Lill
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.
摘要翻译：通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。

67. 发明申请

US20100119844A1 Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas 有权
标题翻译：用于粘接暴露于等离子体的陶瓷部件的耐腐蚀粘合剂
公开(公告)号：US20100119844A1
公开(公告)日：2010-05-13
申请号：US12291747
申请日：2008-11-12
申请人： Jennifer Y. Sun , Ren-Guan Duan , Kenneth S. Collins
发明人： Jennifer Y. Sun , Ren-Guan Duan , Kenneth S. Collins
IPC分类号： B32B18/00 , C09D1/00 , B32B37/00
CPC分类号： C03C10/16 , C03C3/247 , C03C3/325 , C03C8/24 , C03C2204/00 , C04B35/119 , C04B37/005 , C04B2235/3201 , C04B2235/3206 , C04B2235/3225 , C04B2235/445 , C04B2235/5445 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/80 , C04B2237/06 , C04B2237/064 , C04B2237/08 , C04B2237/10 , C04B2237/34 , C04B2237/343 , C04B2237/60 , C04B2237/708 , C04B2237/72 , H01L21/6719
摘要： Embodiments of the invention relate to component structures which are useful as apparatus in plasma processing chambers. Portions of the component structures are bonded together using oxyfluoride-comprising glazes, glass ceramics, and combinations thereof. The bonding material is resistant to halogen-containing plasmas and exhibits desirable mechanical properties.
摘要翻译：本发明的实施例涉及可用作等离子体处理室中的装置的部件结构。使用含氟氟化物的釉料，玻璃陶瓷及其组合将部件结构的部分粘结在一起。粘合材料对含卤素等离子体具有耐受性，并且具有所需的机械性能。

68. 发明申请

US20100018648A1 WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING 审中-公开
标题翻译：用于等离子体反应器的工作支持，具有控制的RF功率分配到工艺套件环
公开(公告)号：US20100018648A1
公开(公告)日：2010-01-28
申请号：US12178032
申请日：2008-07-23
申请人： KENNETH S. COLLINS , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Hiroji Hanawa , Jennifer Y. Sun , Andrew Nguyen , Thorsten B. Lill , Meihua Shen
发明人： KENNETH S. COLLINS , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Hiroji Hanawa , Jennifer Y. Sun , Andrew Nguyen , Thorsten B. Lill , Meihua Shen
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32174 , H01J37/32623 , H01J2237/2001 , H01L21/6833
摘要： In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.
摘要翻译：在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度改变等离子体条件。

69. 发明申请

US20090294275A1 METHOD OF PLASMA LOAD IMPEDANCE TUNING BY MODULATION OF A SOURCE POWER OR BIAS POWER RF GENERATOR 审中-公开
标题翻译：通过调制源功率或偏置功率射频发生器的等离子体负载阻抗调谐方法
公开(公告)号：US20090294275A1
公开(公告)日：2009-12-03
申请号：US12129318
申请日：2008-05-29
申请人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
发明人： Steven C. Shannon , Kartik Ramaswamy , Daniel J. Hoffman , Matthew L. Miller , Kenneth S. Collins
IPC分类号： B01J19/08
CPC分类号： H01L21/67069 , H01L21/67253
摘要： A method of processing a workpiece in a plasma reactor chamber in which plasma RF source and bias power is delivered into the chamber, by sensing fluctuations in a plasma parameter such as load impedance or reflected power at one of the generators, and modulating the output of the other generator to minimize the fluctuation.
摘要翻译：一种在等离子体反应室中处理工件的方法，其中等离子体RF源和偏置功率通过感测诸如负载阻抗或其中一个发生器处的反射功率的等离子体参数的波动而输送到室中，并且调制另一台发电机使波动最小化。

70. 发明申请

US20090257927A1 FOLDED COAXIAL RESONATORS 审中-公开
标题翻译：折叠同轴共振器
公开(公告)号：US20090257927A1
公开(公告)日：2009-10-15
申请号：US12371864
申请日：2009-02-16
申请人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , ANDREW NGUYEN , STEVEN LANE
发明人： KARTIK RAMASWAMY , HIROJI HANAWA , KENNETH S. COLLINS , LAWRENCE WONG , ANDREW NGUYEN , STEVEN LANE
IPC分类号： H01P1/20 , H01P7/04 , H05H1/24
CPC分类号： H01P7/04
摘要： A method for constructing a distributed element coaxial resonator includes folding a coaxial resonator to provide a structure having a decreased physical length compared to its electrical length. In various embodiments, the resonator is tuned to affect a standing wave when excited by a signal of a specific wavelength. The coaxial resonator includes inner, middle and outer conductor sections, wherein the characteristic impedance is maintained throughout the resonator.
摘要翻译：一种用于构造分布式元件同轴谐振器的方法包括折叠同轴谐振器以提供与其电长度相比具有减小的物理长度的结构。在各种实施例中，当由特定波长的信号激发时，谐振器被调谐以影响驻波。同轴谐振器包括内部，中部和外部导体部分，其中在整个谐振器中保持特征阻抗。

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