专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20110279433A1 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：有机发光二极管显示装置及其驱动方法
公开(公告)号：US20110279433A1
公开(公告)日：2011-11-17
申请号：US13105823
申请日：2011-05-11
申请人： Do-Hyung Ryu
发明人： Do-Hyung Ryu
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0852 , G09G2320/0233 , G09G2320/043 , G09G2330/028
摘要： An organic light emitting diode display device includes a display unit including a plurality of pixels; a data driver applying data voltage to the pixels; and a power supplier including a first power source providing high-level voltage to the anode electrode of organic light emitting diodes and a second power source providing low-level voltage to the cathode electrode of the organic light emitting diodes included in the pixels, in which the power supplier provides the second power source in a sink method at positive voltage, when the threshold voltage of a driving transistor for driving the organic light emitting diodes shifts to a negative. When gate-source voltage of a driving transistor shifts to negative threshold voltage, it is possible to apply the data voltage at positive voltage and to simplify a driving IC, thereby ensuring wide use, by applying voltage of a second power source ELVSS at positive voltage.
摘要翻译：一种有机发光二极管显示装置，包括：包括多个像素的显示单元; 将数据电压施加到像素的数据驱动器; 以及电源，其包括向有机发光二极管的阳极提供高电平电压的第一电源和向像素中包括的有机发光二极管的阴极提供低电平电压的第二电源，其中当用于驱动有机发光二极管的驱动晶体管的阈值电压转移到负极时，电源在正电压下以宿方式提供第二电源。当驱动晶体管的栅源电压转移到负阈值电压时，可以以正电压施加数据电压并简化驱动IC，从而通过以正电压施加第二电源ELVSS的电压来确保广泛使用。

62. 发明授权

US08054247B2 Driving method of a display 有权
标题翻译：显示器的驱动方法
公开(公告)号：US08054247B2
公开(公告)日：2011-11-08
申请号：US11892478
申请日：2007-08-23
申请人： Do Hyung Ryu , Do Ik Kim
发明人： Do Hyung Ryu , Do Ik Kim
IPC分类号： G09G3/28
CPC分类号： G09G3/2022 , G09G3/3258 , G09G3/3266 , G09G2310/0213 , G09G2310/0218 , G09G2310/0278 , G09G2320/0266
摘要： In a method for driving a display, one frame may be divided into more sub frames than a number of bits of data. A time period of the one frame may be divided into a number of periods corresponding to a number of scan lines multiplied by the number of sub frames. A start position of the sub frames may be set based on a bit weight of the data so that gradations are linearly expressed. Remainders of the sub frames may be obtained by dividing the start position of the sub frames by the number of sub frames. A line number of a scan line to which a scan signal is supplied may be obtained based on the time period of the one frame, the start position of the sub frames, and the number of the sub frames.
摘要翻译：在用于驱动显示器的方法中，一帧可以被划分成比数据位数更多的子帧。一帧的时间段可以被划分为与扫描线的数量相乘的多个周期乘以子帧的数量。可以基于数据的位权重来设置子帧的开始位置，使得等级线性地表示。可以通过将子帧的开始位置除以子帧的数量来获得子帧的剩余。可以基于一帧的时间段，子帧的开始位置和子帧的数量来获得提供扫描信号的扫描线的行号。

63. 外观设计

USD647902S1 Network storage 有权
标题翻译：网络存储
公开(公告)号：USD647902S1
公开(公告)日：2011-11-01
申请号：US29376827
申请日：2010-10-13
申请人： He Won Kihl , Dai Hyung Ryu
设计人： He Won Kihl , Dai Hyung Ryu

64. 发明申请

US20110171661A1 METHOD FOR DIAGNOSIS OF POST-OPERATIVE RECURRENCE IN PATIENTS WITH HEPATOCELLULAR CARCINOMA 审中-公开
标题翻译：诊断患有肝细胞癌的患者术后复发的方法
公开(公告)号：US20110171661A1
公开(公告)日：2011-07-14
申请号：US13057029
申请日：2008-08-26
申请人： Young Hwa Chung , Eun Sil Yu , Soo Hyung Ryu , Kyu Won Kim , Jeong A Kim
发明人： Young Hwa Chung , Eun Sil Yu , Soo Hyung Ryu , Kyu Won Kim , Jeong A Kim
IPC分类号： G01N33/53
CPC分类号： G01N33/57438 , G01N2800/54
摘要： Provided are a method of diagnosing the recurrence or possibility of recurrence of hepatocellular carcinoma after hepatocellular carcinoma surgery and a method of screening a drug for preventing the recurrence of hepatocellular carcinoma after hepatocellular carcinoma surgery and treating hepatocellular carcinoma. Specifically, the recurrence or possibility of recurrence of hepatocellular carcinoma after hepatocellular carcinoma surgery is diagnosed and a drug for preventing the recurrence of hepatocellular carcinoma after surgery and treating hepatocellular carcinoma is screened, by measuring expression levels of a metastatic tumor antigen 1 or metastasis associated 1 (MTA1) protein in a biological sample taken from a patient in which hepatocellular carcinoma recurs or is likely to recur after hepatocellular carcinoma surgery and comparing the measured expression levels of the MTA1 protein with those of a normal control group.
摘要翻译：提供一种诊断肝细胞癌手术后肝细胞癌复发或复发可能性的方法，以及筛选肝细胞癌手术治疗肝细胞癌后肝细胞癌复发的药物方法。具体来说，通过测定转移性肿瘤抗原1或转移相关的表达水平，筛选肝细胞癌手术后肝细胞癌复发或复发的可能性，并筛选用于预防手术后肝细胞癌复发和治疗肝细胞癌的药物（MTA1）蛋白质，其中肝细胞癌复发或可能在肝细胞癌手术后复发的患者中获取，并比较测量的MTA1蛋白表达水平与正常对照组的表达水平。

65. 发明申请

US20110121318A1 Silicon Carbide Switching Devices Including P-Type Channels 有权
标题翻译：包括P型通道的碳化硅切换装置
公开(公告)号：US20110121318A1
公开(公告)日：2011-05-26
申请号：US13019723
申请日：2011-02-02
申请人： Mrinal Kanti Das , Qingchun Zhang , Sei-Hyung Ryu
发明人： Mrinal Kanti Das , Qingchun Zhang , Sei-Hyung Ryu
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L21/324 , H01L21/046 , H01L21/049 , H01L29/045 , H01L29/1608 , H01L29/66068 , H01L29/7395 , H01L29/7838 , Y10S438/931
摘要： Methods of forming a p-channel MOS device in silicon carbide include forming an n-type well in a silicon carbide layer, and implanting p-type dopant ions to form a p-type region in the n-type well at a surface of the silicon carbide layer and at least partially defining a channel region in the n-type well adjacent the p-type region. A threshold adjustment region is formed in the channel region. The implanted ions are annealed in an inert atmosphere at a temperature greater than 1650° C. A gate oxide layer is formed on the channel region, and a gate is formed on the gate oxide layer. A silicon carbide-based transistor includes a silicon carbide layer, an n-type well in the silicon carbide layer, and a p-type region in the n-type well at a surface of the silicon carbide layer and at least partially defining a channel region in the n-type well adjacent the p-type region. A threshold adjustment region is in the channel region and includes p-type dopants at a dopant concentration of about 1×1016 cm−3 to about 5×1018 cm−3. The transistor further includes a gate oxide layer on the channel region, and a gate on the gate oxide layer. The transistor may exhibit a hole mobility in the channel region in excess of 5 cm2/V-s at a gate voltage of −25V.
摘要翻译：在碳化硅中形成p沟道MOS器件的方法包括在碳化硅层中形成n型阱，以及注入p型掺杂离子以在n型阱的表面形成p型区域并且在邻近p型区域的n型阱中至少部分地限定沟道区。在通道区域中形成阈值调整区域。注入的离子在惰性气氛中在大于1650℃的温度下进行退火。在沟道区上形成栅极氧化层，栅极氧化层上形成栅极。基于碳化硅的晶体管包括碳化硅层，碳化硅层中的n型阱以及在碳化硅层的表面处的n型阱中的p型区域，并且至少部分地限定沟道邻近p型区域的n型阱区域。阈值调整区域在通道区域中，并且包括掺杂剂浓度为约1×10 16 cm -3至约5×10 18 cm -3的p型掺杂剂。晶体管还包括在沟道区上的栅极氧化层和栅极氧化物层上的栅极。晶体管可以在-25V的栅极电压下在沟道区中表现出超过5cm 2 / V-s的空穴迁移率。

66. 发明申请

US20110012819A1 CURRENT GENERATOR AND ORGANIC LIGHT EMITTING DISPLAY USING THE SAME 有权
标题翻译：电流发生器和有机发光显示器使用它
公开(公告)号：US20110012819A1
公开(公告)日：2011-01-20
申请号：US12723372
申请日：2010-03-12
申请人： Do-Hyung Ryu , Do-Ik Kim
发明人： Do-Hyung Ryu , Do-Ik Kim
IPC分类号： G09G3/32
CPC分类号： G09G3/3291 , G09G3/3233 , G09G2300/0861 , G09G2320/0295
摘要： A current generator for supplying or sinking current to/from pixels. The current generator includes a variable power source, a first amplifier having a first input terminal coupled to the variable power source, a sensing resistor coupled between an output terminal of the first amplifier and an external terminal of the current generator, and a second amplifier having a first input terminal and a second input terminal coupled to respective ends of the sensing resistor and an output terminal coupled to a second input terminal of the first amplifier.
摘要翻译：用于向/从像素供电或吸收电流的电流发生器。电流发生器包括可变电源，具有耦合到可变电源的第一输入端的第一放大器，耦合在第一放大器的输出端和电流发生器的外部端之间的感测电阻器，以及第二放大器，耦合到感测电阻器的相应端的第一输入端和第二输入端以及耦合到第一放大器的第二输入端的输出端。

67. 外观设计

USD629373S1 Television 有权
公开(公告)号：USD629373S1
公开(公告)日：2010-12-21
申请号：US29363932
申请日：2010-06-16
申请人： Yeon Jin Kim , Dai Hyung Ryu , Sa Yoon Hong , Tae Ho Kim , Kyong Tae Han , Hee Su Yaung , He Won Kihl , Kwang Ho Choi , Youn Soo Kim
设计人： Yeon Jin Kim , Dai Hyung Ryu , Sa Yoon Hong , Tae Ho Kim , Kyong Tae Han , Hee Su Yaung , He Won Kihl , Kwang Ho Choi , Youn Soo Kim

68. 发明申请

US20100090271A1 Power Switching Semiconductor Devices Including Rectifying Junction-Shunts 有权
标题翻译：功率开关半导体器件包括整流结分路
公开(公告)号：US20100090271A1
公开(公告)日：2010-04-15
申请号：US12560729
申请日：2009-09-16
申请人： Allen Hefner , Sei-Hyung Ryu , Anant Agarwal
发明人： Allen Hefner , Sei-Hyung Ryu , Anant Agarwal
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7803 , H01L21/0465 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/6606 , H01L29/66068 , H01L29/7802 , H01L29/7828 , H01L29/861
摘要： A semiconductor device includes a drift layer having a first conductivity type and a body region adjacent the drift layer. The body region has a second conductivity type opposite the first conductivity type and forms a p-n junction with the drift layer. The device further includes a contactor region in the body region and having the first conductivity type, and a shunt channel region extending through the body region from the contactor region to the drift layer. The shunt channel region has the first conductivity type. The device further includes a first terminal in electrical contact with the body region and the contactor region, and a second terminal in electrical contact with the drift layer. The shunt channel region has a length, thickness and doping concentration selected such that: 1) the shunt channel region is fully depleted when zero voltage is applied across the first and second terminals, 2) the shunt channel becomes conductive at a voltages less than the built-in potential of the drift layer to body region p-n junction, and/or 3) the shunt channel is not conductive for voltages that reverse biase the p-n junction between the drift region and the body region.
摘要翻译：半导体器件包括具有第一导电类型的漂移层和与漂移层相邻的体区。身体区域具有与第一导电类型相反的第二导电类型，并与漂移层形成p-n结。该器件还包括在体区中具有第一导电类型的接触器区域和从接触器区域延伸穿过体区的分流通道区域到漂移层。分流通道区域具有第一导电类型。该装置还包括与主体区域和接触器区域电接触的第一端子和与漂移层电接触的第二端子。分流沟道区域具有选择的长度，厚度和掺杂浓度，使得：1）当跨越第一和第二端子施加零电压时，并联沟道区域完全耗尽，2）并联沟道在小于内置电位漂移层到体区pn结，和/或3）并联通道对于反向偏置漂移区和体区之间的pn结的电压不导通。

69. 发明申请

US20090035926A1 Methods of Fabricating Silicon Carbide Devices Incorporating Multiple Floating Guard Ring Edge Terminations 有权
标题翻译：制造包含多个浮动保护环边缘终端的碳化硅器件的方法
公开(公告)号：US20090035926A1
公开(公告)日：2009-02-05
申请号：US12195700
申请日：2008-08-21
申请人： Sei-Hyung Ryu , Anant K. Agarwal
发明人： Sei-Hyung Ryu , Anant K. Agarwal
IPC分类号： H01L21/28
CPC分类号： H01L29/1608 , H01L29/0619
摘要： Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based semiconductor junction. An insulating layer, such as an oxide, is provided on the floating guard rings and a silicon carbide surface charge compensation region is provided between the floating guard rings and is adjacent the insulating layer. Methods of fabricating such edge termination are also provided.
摘要翻译：用于碳化硅器件的边缘终端在碳化硅层中具有与碳化硅基半导体结相邻并间隔开的多个同心浮动保护环。在浮动保护环上设置绝缘层，例如氧化物，并且在浮动保护环之间提供碳化硅表面电荷补偿区，并且与绝缘层相邻。还提供了制造这种边缘终止的方法。

70. 发明授权

US07414268B2 High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities 有权
标题翻译：具有双向阻塞能力的高压碳化硅MOS双极器件
公开(公告)号：US07414268B2
公开(公告)日：2008-08-19
申请号：US11132355
申请日：2005-05-18
申请人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Hudson McDonald Hobgood , Anant K. Agarwal , John W. Palmour
发明人： Sei-Hyung Ryu , Jason R. Jenny , Mrinal K. Das , Hudson McDonald Hobgood , Anant K. Agarwal , John W. Palmour
IPC分类号： H01L31/0312 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7395 , H01L29/1608 , H01L29/66068 , H01L29/66333
摘要： Silicon carbide high voltage semiconductor devices and methods of fabricating such devices are provided. The devices include a voltage blocking substrate. Insulated gate bipolar transistors are provided that have a voltage blocking substrate. Planar and beveled edge termination may be provided.
摘要翻译：提供了碳化硅高压半导体器件及其制造方法。这些器件包括电压阻挡衬底。提供具有电压阻挡衬底的绝缘栅双极晶体管。可以提供平面和斜边缘终止。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式