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    • 61. 发明申请
    • SELF-SEALED FLUIDIC CHANNELS FOR NANOPORE ARRAY
    • 用于纳米阵列的自密封流体通道
    • US20120267729A1
    • 2012-10-25
    • US13092424
    • 2011-04-22
    • Bing DangHongbo Peng
    • Bing DangHongbo Peng
    • H01L29/66H01L21/02
    • B82Y15/00G01N33/48721Y10S977/70Y10S977/704Y10S977/712Y10S977/84Y10S977/856
    • A method of forming a nanopore array includes patterning a front layer of a substrate to form front trenches, the substrate including a buried layer disposed between the front layer and a back layer; depositing a membrane layer over the patterned front layer and in the front trenches; patterning the back layer and the buried layer to form back trenches, the back trenches being aligned with the front trenches; forming a plurality of nanopores through the membrane layer; depositing a sacrificial material in the front trenches and the back trenches; depositing front and back insulating layers over the sacrificial material; and heating the sacrificial material to a decomposition temperature of the sacrificial material to remove the sacrificial material and form pairs of front and back channels, wherein the front channel of each channel pair is connected to the back channel of its respective channel pair by an individual nanopore.
    • 形成纳米孔阵列的方法包括使衬底的前层图形化以形成前沟槽,所述衬底包括设置在前层和背层之间的掩埋层; 在图案化的前层和前沟槽上沉积膜层; 图案化背层和掩埋层以形成背沟,后沟与前沟槽对齐; 通过膜层形成多个纳米孔; 在前沟槽和后沟槽中沉积牺牲材料; 在所述牺牲材料上沉积前后绝缘层; 并且将所述牺牲材料加热至所述牺牲材料的分解温度以去除所述牺牲材料并形成一对前和后通道,其中每个通道对的前通道通过单独的纳米孔连接到其相应通道对的后通道 。
    • 66. 发明授权
    • Precisely tuning feature sizes on hard masks via plasma treatment
    • 通过等离子体处理在硬掩模上精确调整特征尺寸
    • US08084319B2
    • 2011-12-27
    • US12704665
    • 2010-02-12
    • Hongbo PengStephen M. RossnagelKatherine L. Saenger
    • Hongbo PengStephen M. RossnagelKatherine L. Saenger
    • H01L21/8238
    • H01L21/0337B81B2201/058B81C1/00071H01L21/0338
    • Methods are provided for fabricating devices. A first layer is formed. A hardmask on the first layer is formed. Features on the hardmask are patterned. The sizes of features on the hardmask are reduced by applying a plasma treatment process to form reduced size features. Also, the size of features on the hardmask can be enlarged to form enlarged size features by applying the plasma treatment process and/or removing the oxidized part of the feature during plasma treatment process. Another method may include a first layer formed on a substrate and a second layer formed on the first layer. First features are patterned on the first layer, and second features are patterned on the second layer. A size of second features on the second layer is closed due to the different oxidation rate of the two layers during the plasma treatment process, to form a self-sealed channel and/or self-buried trench.
    • 提供了制造器件的方法。 形成第一层。 形成第一层上的硬掩模。 硬掩模上的特征被图案化。 通过应用等离子体处理工艺来形成尺寸减小的特征,可减少硬掩模上的特征尺寸。 此外,通过在等离子体处理过程中应用等离子体处理工艺和/或去除特征的氧化部分,可以扩大硬掩模上的特征的尺寸以形成扩大的尺寸特征。 另一种方法可以包括形成在基底上的第一层和形成在第一层上的第二层。 第一特征在第一层上被图案化,并且第二特征被图案化在第二层上。 由于在等离子体处理过程中两层的氧化速率不同,所以第二层上的第二特征的尺寸是封闭的,以形成自密封通道和/或自埋式沟槽。