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61. 发明申请

US20090205810A1 LIQUID COOLING DEVICE 审中-公开
标题翻译：液体冷却装置
公开(公告)号：US20090205810A1
公开(公告)日：2009-08-20
申请号：US12033249
申请日：2008-02-19
申请人： Cheng-Feng WAN , Hao-Hui LIN , Su-Chen HU
发明人： Cheng-Feng WAN , Hao-Hui LIN , Su-Chen HU
IPC分类号： F28F7/02
CPC分类号： H01L23/473 , G06F1/20 , G06F2200/201 , H01L2924/0002 , H01L2924/00
摘要： A liquid cooling device includes a liquid block, a heat-dissipating plate, a thermal-conductive pipe, a pump and a heat sink. The liquid block, the pump, and the heat sink are connected by ducts. The pump drives a coolant to circulate among them. The thermal-conductive pipe is mounted on the heat-dissipating plate. Both ends of the thermal-conductive pipe are connected to the liquid block for the coolant to flow through. The liquid block and the heat sink are respectively mounted on the corresponding electronic devices to absorb heat using the circulating coolant. The heat sink is used to dissipate heat from another heat-generating electronic device. Therefore, one less liquid block is required, and the production cost becomes lower.
摘要翻译：液体冷却装置包括液体块，散热板，导热管，泵和散热器。液体块，泵和散热器通过管道连接。泵驱动冷却液在它们之间循环。导热管安装在散热板上。导热管的两端连接到液体块以使冷却剂流过。液体块和散热器分别安装在相应的电子设备上以使用循环冷却剂吸收热量。散热器用于从另一个发热电子设备散发热量。因此，需要少量的液体块，并且生产成本降低。

62. 发明申请

US20090204396A1 METHOD AND APPARATUS FOR IMPLEMENTING SPEECH DECODING IN SPEECH DECODER FIELD OF THE INVENTION 有权
标题翻译：用于在语音解码器中实现语音解码的方法和装置技术领域
公开(公告)号：US20090204396A1
公开(公告)日：2009-08-13
申请号：US12426379
申请日：2009-04-20
申请人： Jianfeng Xu , Lijing Xu , Qing Zhang , Wei Li , Shenghu Sang , Zhengzhong Du , Chen Hu
发明人： Jianfeng Xu , Lijing Xu , Qing Zhang , Wei Li , Shenghu Sang , Zhengzhong Du , Chen Hu
IPC分类号： G10L11/04
CPC分类号： G10L19/005 , G10L19/09 , G10L19/107
摘要： The present disclosure relates to a decoding method and apparatus. The method includes: receiving data frames from the coder; if any erroneous frame appears, calculating a pitch lag parameter of the erroneous frame; decoding the data frames according to the calculated pitch lag parameter of the erroneous frame, and obtaining decoded data. The process of determining the pitch lag parameter includes: determining the number of continuous erroneous frames and the pitch lag parameter of the previous frame; adjusting the pitch lag parameter of the previous frame according to the number of the continuous erroneous frames and a preset adjustment policy, and calculating and determining the pitch lag parameter of a current erroneous frame, wherein the preset adjustment policy is adjusting the determined pitch lag parameter of the current erroneous frame within a preset value range according to the number of the continuous erroneous frames.
摘要翻译：本公开涉及一种解码方法和装置。该方法包括：从编码器接收数据帧; 如果出现任何错误帧，则计算错误帧的音调滞后参数; 根据所计算的错误帧的音调滞后参数对数据帧进行解码，并获得解码数据。确定音调滞后参数的过程包括：确定连续错误帧的数量和前一帧的音调滞后参数; 根据连续错误帧的数量和预设的调整策略来调整前一帧的音调滞后参数，以及计算和确定当前错误帧的音调滞后参数，其中预设调整策略正在调整所确定的音调滞后参数根据连续错误帧的数量在预设值范围内的当前错误帧。

63. 发明授权

US07552048B2 Method and device for performing frame erasure concealment on higher-band signal 有权
标题翻译：在较高频带信号上执行帧擦除隐藏的方法和装置
公开(公告)号：US07552048B2
公开(公告)日：2009-06-23
申请号：US12273391
申请日：2008-11-18
申请人： Jianfeng Xu , Lei Miao , Chen Hu , Qing Zhang , Lijing Xu , Wei Li , Zhengzhong Du , Yi Yang , Fengyan Qi , Wuzhou Zhan , Dongqi Wang
发明人： Jianfeng Xu , Lei Miao , Chen Hu , Qing Zhang , Lijing Xu , Wei Li , Zhengzhong Du , Yi Yang , Fengyan Qi , Wuzhou Zhan , Dongqi Wang
IPC分类号： G10L11/04 , G10L19/00
CPC分类号： G10L19/005 , G10L19/0204
摘要： A method for performing a frame erasure concealment for a higher-band signal involves calculating a periodic intensity of the higher-band signal with respect to pitch period information of a lower-band signal; comparing the periodic intensity to a preconfigured threshold and, if the periodic intensity is greater or equal to the preconfigured threshold, performing the frame erasure concealment with a pitch period repetition based method. If the periodic intensity is less than the preconfigured threshold, performing the frame erasure concealment with a previous frame data repetition based method. A device for performing a frame erasure concealment includes a periodic intensity calculation module, a pitch period repetition module, and a previous frame data repetition module. The pitch period repetition module performs the frame erasure concealment with a pitch period repetition based method; and the previous frame data repetition module performs the frame erasure concealment with a previous frame data repetition based method.
摘要翻译：用于执行较高频带信号的帧擦除隐藏的方法包括：计算相对于较低频带信号的音调周期信息的较高频带信号的周期性强度; 将周期性强度与预配置的阈值进行比较，并且如果周期性强度大于或等于预配置阈值，则以基于音调周期重复的方法执行帧擦除隐藏。如果周期性强度小于预配置阈值，则使用先前基于帧数据重复的方法来执行帧擦除隐藏。用于执行帧擦除隐藏的装置包括周期性强度计算模块，音调周期重复模块和先前的帧数据重复模块。音调周期重复模块以音调周期重复方式执行帧擦除隐藏; 前一帧数据重复模块利用先前基于帧数据重复的方法执行帧擦除隐藏。

64. 发明授权

US07014739B2 Convex profile anode for electroplating system 失效
公开(公告)号：US07014739B2
公开(公告)日：2006-03-21
申请号：US10159374
申请日：2002-05-30
申请人： Tro-Hsu Lin , Tien-Chen Hu , Hong-Jin Pu , Zhi-Zan Zhuang
发明人： Tro-Hsu Lin , Tien-Chen Hu , Hong-Jin Pu , Zhi-Zan Zhuang
IPC分类号： C25D17/00
CPC分类号： C25D17/10
摘要： An electroplating anode including a substantially convex oxidizing surface for oxidation of metal atoms in a semiconductor wafer electroplating process. The electroplating anode of the present invention substantially prolongs the lifetime of the anode and contributes to the prevention of wafer contamination due to generation of potential wafer-contaminating precipitate particles during a wafer electroplating process.

65. 发明申请

US20060008958A1 Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layer 有权
标题翻译：使用应变硅锗层的选择性外延的互补金属氧化物半导体晶体管技术
公开(公告)号：US20060008958A1
公开(公告)日：2006-01-12
申请号：US11227264
申请日：2005-09-15
申请人： Yee-Chia Yeo , Chun-Chieh Lin , Fu-Liang Yang , Chen Hu
发明人： Yee-Chia Yeo , Chun-Chieh Lin , Fu-Liang Yang , Chen Hu
IPC分类号： H01L21/337 , H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L21/28167 , H01L21/26513 , H01L21/28035 , H01L21/28114 , H01L21/823807 , H01L21/823878 , H01L29/1054 , H01L29/155 , H01L29/7846
摘要： A CMOS integrated circuit includes a substrate having an NMOS region with a P-well and a PMOS region with an N-well. A shallow trench isolation (STI) region is formed between the NMOS and PMOS regions and a composite silicon layer comprising a strained SiGe layer is formed over said P well region and over said N well region. The composite silicon layer is disconnected at the STI region. Gate electrodes are then formed on the composite layer in the NMOS and PMOS regions.
摘要翻译： CMOS集成电路包括具有带有P阱的NMOS区域和具有N阱的PMOS区域的衬底。在NMOS和PMOS区之间形成浅沟槽隔离（STI）区，并且在所述P阱区和所述N阱区之上形成包含应变SiGe层的复合硅层。复合硅层在STI区域断开。然后在NMOS和PMOS区域中的复合层上形成栅电极。

66. 发明授权

US06914337B2 Calibration wafer and kit 失效
标题翻译：校准晶圆和套件
公开(公告)号：US06914337B2
公开(公告)日：2005-07-05
申请号：US10701805
申请日：2003-11-04
申请人： Chih-Nan Chuang , Tien-Chen Hu , Tro-Hsu Lin , Cheng-Fang Chang
发明人： Chih-Nan Chuang , Tien-Chen Hu , Tro-Hsu Lin , Cheng-Fang Chang
IPC分类号： B24B37/04 , B24B47/22 , G01D21/00 , H01L21/302 , H01L21/66 , H01L21/68 , H01L23/544
CPC分类号： B24B37/345 , B24B47/22 , H01L21/68 , Y10S414/136
摘要： A calibration wafer which is suitable for calibrating alignment of a transfer robot blade with respect to wafers in a loadlock chamber or input shuttle. The calibration wafer includes a circular wafer body on which is provided a pair of spaced-apart blade alignment lines which are used to properly align the transfer robot blade. The invention further includes a calibration kit for calibrating alignment of a polishing head with a pedestal, including a base plate for placement on the pedestal; a calibration plate for placement on the base plate; and a calibration circle provided on the calibration plate for aligning the polishing head with the pedestal.
摘要翻译：一种校准晶片，其适于校准传送机器人刀片相对于负载锁定室或输入梭中的晶片的对准。校准晶片包括圆形晶片体，其上设置有一对间隔开的刀片对准线，其用于适当地对准传送机器人刀片。本发明还包括用于校准抛光头与基座的对准的校准套件，包括用于放置在基座上的基板; 用于放置在基板上的校准板; 以及设置在校准板上用于将抛光头与基座对准的校准圆。

67. 发明申请

US20050091863A1 CALIBRATION WAFER AND KIT 失效
标题翻译：校准水壶和工具包
公开(公告)号：US20050091863A1
公开(公告)日：2005-05-05
申请号：US10701805
申请日：2003-11-04
申请人： Chih-Nan Chuang , Tien-Chen Hu , Tro-Hsu Lin , Cheng-Fang Chang
发明人： Chih-Nan Chuang , Tien-Chen Hu , Tro-Hsu Lin , Cheng-Fang Chang
IPC分类号： B24B37/04 , B24B47/22 , G01D21/00 , H01L21/302 , H01L21/66 , H01L21/68 , H01L23/544
CPC分类号： B24B37/345 , B24B47/22 , H01L21/68 , Y10S414/136
摘要： A calibration wafer which is suitable for calibrating alignment of a transfer robot blade with respect to wafers in a loadlock chamber or input shuttle. The calibration wafer includes a circular wafer body on which is provided a pair of spaced-apart blade alignment lines which are used to properly align the transfer robot blade. The invention further includes a calibration kit for calibrating alignment of a polishing head with a pedestal, including a base plate for placement on the pedestal; a calibration plate for placement on the base plate; and a calibration circle provided on the calibration plate for aligning the polishing head with the pedestal.
摘要翻译：一种校准晶片，其适于校准传送机器人刀片相对于负载锁定室或输入梭中的晶片的对准。校准晶片包括圆形晶片体，其上设置有一对间隔开的刀片对准线，其用于适当地对准传送机器人刀片。本发明还包括用于校准抛光头与基座的对准的校准套件，包括用于放置在基座上的基板; 用于放置在基板上的校准板; 以及设置在校准板上用于将抛光头与基座对准的校准圆。

68. 发明授权

US06524959B1 Chemical mechanical polish (CMP) planarizing method employing derivative signal end-point monitoring and control 有权
标题翻译：采用衍生信号端点监测和控制的化学机械抛光（CMP）平面化方法
公开(公告)号：US06524959B1
公开(公告)日：2003-02-25
申请号：US09686766
申请日：2000-10-10
申请人： Chen-Fa Lu , Chen-Peng Fan , Jui-Ping Chuang , Tien-Chen Hu
发明人： Chen-Fa Lu , Chen-Peng Fan , Jui-Ping Chuang , Tien-Chen Hu
IPC分类号： H01L21302
CPC分类号： B24B37/013 , B24B49/12
摘要： Within a method for fabricating a microelectronic fabrication there is first provided a substrate having formed thereover a minimum of one microelectronic layer, where the minimum of one microelectronic layer is at least partially transparent to an incident radiation beam. There is then chemical mechanical polish (CMP) planarized the minimum of one microelectronic layer, while employing a chemical mechanical polish (CMP) planarizing method, to form from the minimum of one microelectronic layer a minimum of one chemical mechanical polish (CMP) planarized microelectronic layer. Within the method, a chemical mechanical polish (CMP) planarizing endpoint within the chemical mechanical polish (CMP) planarizing method with respect to the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer is determined while employing the incident radiation beam incident upon the minimum of one microelectronic layer, in conjunction with a derivative of a property of a minimum of one reflected portion of the incident radiation beam reflected from the minimum of one microelectronic layer as the minimum of one microelectronic layer is chemical mechanical polish (CMP) planarized to form the minimum of one chemical mechanical polish (CMP) planarized microelectronic layer.
摘要翻译：在用于制造微电子制造的方法中，首先提供了在至少一个微电子层之上形成的衬底，其中一个微电子层的最小值对入射的辐射束至少部分透明。然后化学机械抛光（CMP）将最小的一个微电子层平坦化，同时采用化学机械抛光（CMP）平面化方法，从最小的一个微电子层形成最少一个化学机械抛光（CMP）平面化微电子层。在该方法中，在使用入射到所述化学机械抛光（CMP）平坦化微电子层的入射辐射束的同时，在化学机械抛光（CMP）平面化方法中，化学机械抛光（CMP）平面化方法中的化学机械抛光（CMP）一个微电子层的最小值与从一个微电子层的最小值反射的入射辐射束的最小一个反射部分的性质的导数结合，作为一个微电子层的最小值是化学机械抛光（CMP）平坦化为形成一个化学机械抛光（CMP）平面化微电子层的最小值。

69. 发明授权

US06517413B1 Method for a copper CMP endpoint detection system 有权
标题翻译：铜CMP端点检测系统的方法
公开(公告)号：US06517413B1
公开(公告)日：2003-02-11
申请号：US09695651
申请日：2000-10-25
申请人： Tien-Chen Hu , Jin-Churng Twu , Chen-Fa Lu
发明人： Tien-Chen Hu , Jin-Churng Twu , Chen-Fa Lu
IPC分类号： B24B4912
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12
摘要： A new method is provided for endpoint detection of the polishing of a copper surface. The amount of copper dioxide that is removed from the surface that is being polished is monitored by means of a laser beam that is reflected off the polishing pad that is used for the polishing operation. The reflected light beam is analyzed for color content, based on this analysis it can be determined at what time no more copper dioxide is present on the surface of the polishing pad, which is the time that the process of removing copper from the surface that is being polished is complete. The polishing process is stopped at that time.
摘要翻译：提供了一种用于铜表面抛光的端点检测的新方法。通过从用于抛光操作的抛光垫反射的激光束来监测从抛光表面去除的二氧化铜的量。分析反射光束的颜色含量，基于该分析，可以确定在什么时候在抛光垫的表面上不再存在二氧化铜，这是从表面去除铜的过程的时间被抛光完成。当时抛光过程停止。

70. 发明授权

US5929324A Apparatus for detecting leakage in a gas reactor 失效
标题翻译：用于检测气体反应器中泄漏的装置
公开(公告)号：US5929324A
公开(公告)日：1999-07-27
申请号：US958055
申请日：1997-10-27
申请人： Tien Chen Hu , Philip Jan Lin
发明人： Tien Chen Hu , Philip Jan Lin
IPC分类号： C01B13/10 , C01B13/11 , G01M3/28 , G01M3/26 , B01D24/00 , B01J14/08
CPC分类号： C01B13/10 , C01B13/11 , G01M3/2807 , C01B2201/90
摘要： The present invention discloses a gas generating device that is equipped with a gas leakage detection and control system which includes a multiple number of gas generating units each equipped with flow sensors for detecting flow rates in and out of the unit and a unit controller. The gas generating device is controlled by a main controller so that when leakage in a generating unit is detected, the unit is shut off and bypassed while the outputs of the other generating units can be increased to make up the shortage such that such that the total output from the gas generating device is not affected. The present invention novel apparatus further provides the capability that any leakage in the piping system which connects the multiple number of generating units can be detected by using flow sensors installed in a main gas inlet and a main gas outlet such that the total gas flow rates coming in and going out can be continuously monitored.
摘要翻译：本发明公开了一种配备有气体泄漏检测和控制系统的气体发生装置，其包括多个气体发生单元，每个气体发生单元配备有用于检测流入和流出该单元的流量的流量传感器和单元控制器。气体发生装置由主控制器控制，使得当检测到发生单元中的泄漏时，单元被切断和旁路，同时可以增加其他发电机组的输出以弥补短缺，使得总计来自气体发生装置的输出不受影响。本发明的新颖设备还提供了通过使用安装在主气体入口和主气体出口中的流量传感器来检测连接多个发电机组的管道系统中的任何泄漏的能力，使得总气体流量来可以持续监控进出。

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