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51. 发明授权

US5057492A Method for preparing a single crystal of lanthanum cuprate 失效
标题翻译：制备单晶硅酸钙的方法
公开(公告)号：US5057492A
公开(公告)日：1991-10-15
申请号：US521624
申请日：1990-05-10
申请人： Kunihiko Oka , Hiromi Unoki
发明人： Kunihiko Oka , Hiromi Unoki
IPC分类号： C30B9/00 , C30B13/00 , C30B13/24 , C30B15/00 , H01L39/12
CPC分类号： C30B29/225 , C30B13/24 , C30B15/00 , C30B9/00 , H01L39/126 , Y10S505/729
摘要： Lanthanum cuprate, La.sub.2 CuO.sub.4, is a superconductive oxide. In order to prepare a single crystal of lanthanum cuprate, the phase diagram of La.sub.2 O.sub.3 -CuO system is determined utilizing their differential thermal analysis and X-ray diffractometry. Cu oxide and at least one of lanthanum oxide and lanthanum carbonate are mixed in the molar ratio of 71.1-92.9:28.9-7.1. The resulting mixture is heated to be molten. While slowly cooling the melt, nuclei of La.sub.2 CuO.sub.4 precipitate from the melt, growing to single crystals in the melt. As a result, large scale single crystals are prepared.

52. 发明授权

US5043219A Composite material 失效
标题翻译：复合材料
公开(公告)号：US5043219A
公开(公告)日：1991-08-27
申请号：US467542
申请日：1990-01-19
申请人： Katsuhito Yoshida , Kazuwo Tsuji
发明人： Katsuhito Yoshida , Kazuwo Tsuji
IPC分类号： B01J3/06 , C01B21/064 , C01B31/06 , C30B9/00 , C30B29/04 , C30B29/38 , H01L21/20 , H01L29/20 , H01L29/207 , H01L29/267 , H01S5/00 , H01S5/02 , H01S5/32
CPC分类号： H01L33/32 , B01J3/062 , C30B29/04 , C30B29/38 , C30B9/00 , H01L21/02376 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02658 , H01L29/20 , H01L29/207 , H01L29/267 , H01L33/007 , B01J2203/062 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/068 , Y10S148/113 , Y10T428/30
摘要： A composite material useful as a diode capable of operating at a high temperature, i.e., 500.degree. to 600.degree. C. or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises an electrically insulating single crystal diamond substrate and single crystal cubic boron nitride directly formed on one surface of the single crystal diamond in such a manner that the single crystal cubic boron nitride has the same plane index as the substrate.

53. 发明授权

US4996186A Flux method for producing crystals of superconducting YBa.sub.2 Cu.sub.3 O.sub.7 失效
标题翻译：用于生产超导YBa2Cu3O7晶体的通量法
公开(公告)号：US4996186A
公开(公告)日：1991-02-26
申请号：US228979
申请日：1988-08-05
申请人： Zhao Z. Wang , Nai-Phuan Ong
发明人： Zhao Z. Wang , Nai-Phuan Ong
IPC分类号： C30B9/00
CPC分类号： C30B29/225 , C30B9/00 , Y10S420/901 , Y10S505/729
摘要： Method for producing single crystals of YBa.sub.2 Cu.sub.3 O.sub.7 which undergo a transition to the superconducting state above 90K, comprising:(a) preparing a flux composition by mixing BaO.sub.2 and CuO powders in the molecular weight ratio of approximately 1:1, layering on top of the mixture powdered YBa.sub.2 Cu.sub.3 O.sub.7 in an amount up to approximately 20% of the total weight of the BaO.sub.2 --CuO mixture, firing the mixture in air at approximately 930.degree. C.-950.degree. C. for approximately 24 hours, and thereafter raising the temperature from 930.degree. C.-950.degree. C. to approximately 1025.degree.-1030.degree. C. within 1/2 hour and maintaining the temperature at approximately 1025.degree. C.-1030.degree. C. for approximately one hour to one and one-half hours;(b) cooling thereafter the flux to approximately 1020.degree. C.-980.degree.;(c) providing an oxygen gas flow to the flux when the temperature is approximately 1020.degree. C.-980.degree. C.;(d) maintaining the flux in an oxygen gas flow at approximately 980.degree. C. for approximately 30 minutes or longer;(e) cooling thereafter the flux in oxygen gas flow from approximately 980.degree. C. to 960.degree. C. at a rate of no more than 2.degree. to 20.degree. C./hour; and(f) cooling thereafter the flux slowly to room temperature in an oxygen gas flow.
摘要翻译：生产YBa2Cu3O7单晶的方法，该YBa2Cu3O7过渡到超过90K的超导状态，包括：（a）通过将BaO 2和CuO粉末以大约1:1的分子量比混合来制备助熔剂组合物，分层在混合物的顶部粉末YBa2Cu3O7的量高达BaO 2-CuO混合物总重量的约20％，在空气中将混合物在约930℃-95℃下焙烧约24小时，然后升温至930℃ 在1/2小时内，在-95℃至约1025℃-1030℃，并将温度保持在约1025℃-1030℃约1小时至1.5小时; （b）然后将助熔剂冷却至约1020℃-980℃; （c）当温度约为1020℃-980℃时，向焊剂提供氧气流。（d）将氧气流中的助熔剂维持在约980℃约30分钟或更长时间; （e）此后，其中氧气中的助熔剂以不超过2℃至20℃/小时的速率从约980℃流动至960℃; 和（f）之后将助熔剂在氧气流中缓慢地冷却至室温。

54. 发明授权

US4985222A Process for preparation of aluminum borate whisker 失效
标题翻译：硼酸铝晶须的制备方法
公开(公告)号：US4985222A
公开(公告)日：1991-01-15
申请号：US437630
申请日：1989-11-17
申请人： Hajime Hata , Hajime Kanbara
发明人： Hajime Hata , Hajime Kanbara
IPC分类号： C30B29/62 , C30B9/00
CPC分类号： C30B9/00 , C30B29/10 , C30B29/62
摘要： Disclosed is a process for the preparation of an aluminum borate whisker, which comprises mixing a trialkali aluminum trisulfate represented by the following general formula:M.sub.3 Al(SO.sub.4).sub.3wherein M represents an alkali metal, with at least one boric anhydride source component selected from the group consisting of boron oxides, boron oxyacids and alkali metal salts thereof, and carrying out reaction and growth at a temperature of from 700.degree. to 1200.degree. C.

55. 发明授权

US4925641A Process for preparing aluminum borate whiskers 失效
标题翻译：硼酸铝晶须的制备方法
公开(公告)号：US4925641A
公开(公告)日：1990-05-15
申请号：US207538
申请日：1988-06-16
申请人： Takao Kitamura , Kohji Sakane , Hideo Wada , Hajime Hata , Hajime Kanbara
发明人： Takao Kitamura , Kohji Sakane , Hideo Wada , Hajime Hata , Hajime Kanbara
IPC分类号： C30B9/00
CPC分类号： C30B29/22 , C30B29/62 , C30B9/00
摘要： An aluminum borate whisker having a composition of 9Al.sub.2 O.sub.3 .multidot.2B.sub.2 O.sub.3 or 2Al.sub.2 O.sub.3 .multidot.B.sub.2 O.sub.3 is formed by reacting under heating at least one aluminum-supplying component selected from the group consisting of hydroxides and inorganic salts of aluminum and at least one boric acid-supplying component selected from the group consisting of oxides, oxyacids and their alkali metal salts of boron in the presence of at least one flux selected from the group consisting of alkali metal chlorides, alkali metal sulfates and alkali carbonates.

56. 发明授权

US4883559A Process for making transition metal nitride whiskers 失效
标题翻译：制备过渡金属氮化物晶须的方法
公开(公告)号：US4883559A
公开(公告)日：1989-11-28
申请号：US180753
申请日：1988-04-12
申请人： Carlos E. Bamberger
发明人： Carlos E. Bamberger
IPC分类号： C01B21/06 , C30B1/10 , C30B9/00 , C30B29/38
CPC分类号： C30B9/00 , C30B1/10 , C30B29/38 , C30B29/62
摘要： A process for making metal nitrides, particularly titanium nitride whiskers, using a cyanide salt as a reducing agent for a metal compound in the presence of an alkali metal oxide. Sodium cyanide, various titanates and titanium oxide mixed with sodium oxide react to provide titanium nitride whiskers that can be used as reinforcement to ceramic composites.
摘要翻译：在碱金属氧化物的存在下，使用氰化物盐作为金属化合物的还原剂来制造金属氮化物，特别是氮化钛晶须的方法。氰化钠，各种钛酸钠和与氧化钠混合的二氧化钛反应，提供氮化钛晶须，可用作陶瓷复合材料的增强材料。

57. 发明授权

US4838988A Process for obtaining crystals of intermetallic compounds, in particular isolated monocrystals, by cooling alloys in the molten state 失效
标题翻译：通过在熔融状态下冷却合金来获得金属间化合物的晶体，特别是分离的单晶的方法
公开(公告)号：US4838988A
公开(公告)日：1989-06-13
申请号：US111193
申请日：1987-10-22
申请人： Jean-Marc Lang , Bruno Dubost
发明人： Jean-Marc Lang , Bruno Dubost
IPC分类号： C30B11/00 , C22C1/00 , C30B9/00 , C30B29/52
CPC分类号： C30B9/00 , C30B29/52
摘要： The invention relates to a process for obtaining crystals of intermetallic compounds, in particular isolated monocrystals, by cooling alloys in the molten state.The process involves using an alloy in the molten state which has a composition such that the first phase to crystallize during its solidification corresponds to the compound to be isolated, cooling it slowly by subjecting it to cyclic stirring and thermal cycling without attaining the temperature at which another solid phase appears then abruptly expelling the residual liquid.The process is used for obtaining large monophase primary crystals of compounds which melt congruently or incongruently, in particular compounds having symmetry of order 5 known as "quasi-crystals".
摘要翻译：本发明涉及通过在熔融状态下冷却合金来获得金属间化合物的晶体，特别是分离的单晶的方法。该方法包括使用熔融状态的合金，其具有使其在固化期间结晶的第一相对应于要分离的化合物的组成，通过使其循环搅拌和热循环进行循环搅拌和热循环来缓慢冷却，而不达到温度然后出现另一个固相，突然排出残留液体。该方法用于获得一致或不一致熔化的化合物的大单相主晶体，特别是具有称为“准晶体”的5号对称性的化合物。

58. 发明授权

US4623424A Process for producing tin oxide fibers 失效
标题翻译：氧化锡纤维的制造方法
公开(公告)号：US4623424A
公开(公告)日：1986-11-18
申请号：US647656
申请日：1984-09-06
申请人： Kenji Uchida , Eisuke Bannai
发明人： Kenji Uchida , Eisuke Bannai
IPC分类号： C30B9/00 , C30B23/00
CPC分类号： C30B9/00 , C30B29/16 , C30B29/62
摘要： A process for producing tin oxide fibers, which comprises forming a melt comprising a solute composed essentially of tin oxide and a solvent selected from the group consisting of copper, a copper alloy, tin or a tin alloy, evaporating the solute from the melt, and leading the evaporated solute to a low temperature zone, whereby tin oxide fibers are permitted to precipitate and grow in the low temperature zone.
摘要翻译：一种生产氧化锡纤维的方法，其包括形成熔体，其包含基本上由氧化锡组成的溶质和选自铜，铜合金，锡或锡合金的溶剂，从熔体中蒸发溶质，以及将蒸发的溶质引导到低温区域，由此允许氧化锡纤维在低温区域沉淀和生长。

59. 发明授权

US4551195A Method for growing boron nitride crystals of cubic system 失效
标题翻译：用于生长立方体系的氮化硼晶体的方法
公开(公告)号：US4551195A
公开(公告)日：1985-11-05
申请号：US654293
申请日：1984-09-25
申请人： Eiichi Iizuka , Tomoji Sando , Shinji Kashima , Masakazu Maki
发明人： Eiichi Iizuka , Tomoji Sando , Shinji Kashima , Masakazu Maki
IPC分类号： C30B9/00 , C30B29/38
CPC分类号： C30B9/00 , C30B29/38
摘要： Cubic boron nitride crystals are grown by subjecting reaction materials of low pressure phase boron nitride, a solvent material, and cubic boron nitride seeds to pressure and temperature conditions in the cubic boron nitride-stable region. The reaction materials are in the form of a pair of a superimposed solvent material plate and a low pressure phase boron nitride plate or a pile made of a plurality of the pairs of the superimposed solvent material plate and low pressure phase boron nitride plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent material plate and low pressure phase boron nitride plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent material and the low pressure phase boron nitride or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 150 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent grown cubic boron nitride crystal particles is from 20 to 200 .mu.m. The cubic boron nitride crystals are allowed to grow until their sizes reach at least 1.5 times the size of the seeds.
摘要翻译：通过将低压相氮化硼，溶剂材料和立方氮化硼种子的反应材料经受立方氮化硼稳定区域的压力和温度条件来生长立方氮化硼晶体。反应材料是一对叠加的溶剂材料板和低压相氮化硼板或由多对叠加的溶剂材料板和低压相氮化硼板组成的桩的形式，以及多个种子配置在一对叠加的溶剂材料板和低压相氮化硼板的相对表面的一个或每个上。或者，反应材料为由溶剂材料和低压相氮化硼的混合物制成的板或由多个混合板制成的桩，并且多个种子设置在表面上的每个板。种子具有不大于150μm的粒径，并且以这样的方式规则地设置种子位于基本上相等的距离处，并且每两个相邻生长的立方氮化硼晶体颗粒的周边之间的距离为20 至200亩。允许立方氮化硼晶体生长直到其尺寸达到种子大小的至少1.5倍。

60. 发明授权

US4544540A Diamond single crystals, a process of manufacturing and tools for using same 失效
标题翻译：钻石单晶，制造工艺及其使用工具
公开(公告)号：US4544540A
公开(公告)日：1985-10-01
申请号：US506935
申请日：1983-06-22
申请人： Kazuo Tsuji
发明人： Kazuo Tsuji
IPC分类号： B01J3/06 , C30B9/00 , C30B13/02 , C01B31/06
CPC分类号： C30B13/02 , B01J3/062 , C30B29/04 , C30B9/00 , B01J2203/061 , B01J2203/062 , B01J2203/0625 , B01J2203/0655 , B01J2203/068
摘要： An artificial diamond single crystal, a process for producing it, and tools for utilizing it are disclosed. The artificial diamond crystal has at least one surface which has a rough surface formed by suppressed crystal growth at that surface. The single crystal is produced by providing a diamond synthesis reaction system comprised of a reaction chamber, a carbon source and a solvent metal arranged in contact with the carbon source. A seed crystal is provided in the reaction chamber under elevated pressures and temperatures which permit diamond to be maintained thermodynamically stable. The reaction system is heated to provide a temperature gradient in such a way that a portion of the solvent metal in contact with the carbon source is higher in temperature than a portion of the solvent metal in contact with the seed crystal. This temperature gradient causes a migration of the carbon from the higher temperature portion to the lower temperature portion using the solvent metal as a medium. This allows the carbon to precipitate and grow as diamond on the seed crystal due to the difference in solubility caused by the temperature gradient. The conditions in the reaction chamber housing are maintained so as to suppress crystal growth in at least one direction perpendicular to the direction of the temperature gradient, at the end of the solvent metal. The suppressed crystal growth provides the rough surface of the single crystal which can be connected to a tool and thus provides good adherence between the crystal and the tool.
摘要翻译：公开了一种人造金刚石单晶，其制造方法及其利用工具。人造金刚石晶体具有至少一个表面，其具有通过在该表面处抑制晶体生长而形成的粗糙表面。通过提供由反应室，碳源和布置成与碳源接触的溶剂金属组成的金刚石合成反应系统来生产单晶。在升高的压力和温度下在反应室中提供晶种，这允许金刚石在热力学上保持稳定。将反应体系加热以提供温度梯度，使得与碳源接触的溶剂金属的一部分温度高于与晶种接触的溶剂金属的一部分。该温度梯度使用溶剂金属作为介质使碳从较高温度部分迁移到较低温度部分。这允许碳由于温度梯度引起的溶解度的差异而在晶种上沉淀和生长为金刚石。保持反应室壳体中的条件，以便在溶剂金属末端的至少一个垂直于温度梯度方向的方向上抑制晶体生长。抑制的晶体生长提供可以连接到工具的单晶的粗糙表面，从而在晶体和工具之间提供良好的粘附。

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