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    • 1. 发明授权
    • Method for growing boron nitride crystals of cubic system
    • 用于生长立方体系的氮化硼晶体的方法
    • US4551195A
    • 1985-11-05
    • US654293
    • 1984-09-25
    • Eiichi IizukaTomoji SandoShinji KashimaMasakazu Maki
    • Eiichi IizukaTomoji SandoShinji KashimaMasakazu Maki
    • C30B9/00C30B29/38
    • C30B9/00C30B29/38
    • Cubic boron nitride crystals are grown by subjecting reaction materials of low pressure phase boron nitride, a solvent material, and cubic boron nitride seeds to pressure and temperature conditions in the cubic boron nitride-stable region. The reaction materials are in the form of a pair of a superimposed solvent material plate and a low pressure phase boron nitride plate or a pile made of a plurality of the pairs of the superimposed solvent material plate and low pressure phase boron nitride plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent material plate and low pressure phase boron nitride plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent material and the low pressure phase boron nitride or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 150 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent grown cubic boron nitride crystal particles is from 20 to 200 .mu.m. The cubic boron nitride crystals are allowed to grow until their sizes reach at least 1.5 times the size of the seeds.
    • 通过将低压相氮化硼,溶剂材料和立方氮化硼种子的反应材料经受立方氮化硼稳定区域的压力和温度条件来生长立方氮化硼晶体。 反应材料是一对叠加的溶剂材料板和低压相氮化硼板或由多对叠加的溶剂材料板和低压相氮化硼板组成的桩的形式,以及 多个种子配置在一对叠加的溶剂材料板和低压相氮化硼板的相对表面的一个或每个上。 或者,反应材料为由溶剂材料和低压相氮化硼的混合物制成的板或由多个混合板制成的桩,并且多个种子设置在表面上 的每个板。 种子具有不大于150μm的粒径,并且以这样的方式规则地设置种子位于基本上相等的距离处,并且每两个相邻生长的立方氮化硼晶体颗粒的周边之间的距离为20 至200亩。 允许立方氮化硼晶体生长直到其尺寸达到种子大小的至少1.5倍。
    • 2. 发明授权
    • Method for growing diamond crystals
    • 生长金刚石晶体的方法
    • US4547257A
    • 1985-10-15
    • US654295
    • 1984-09-25
    • Eiichi IizukaTomoji SandoShinji Kashima
    • Eiichi IizukaTomoji SandoShinji Kashima
    • B01J3/06C30B29/04
    • B01J3/062B01J2203/061B01J2203/062B01J2203/0655B01J2203/068
    • Diamond crystals are grown by subjecting reaction materials of nondiamond carbon, a solvent metal, and diamond seeds to pressure and temperature conditions in the diamond-stable region. The reaction materials are in the form of a pair of a superimposed solvent metal plate and a nondiamond carbon plate or a pile made of a plurality of the pairs of the superimposed solvent metal plate and nondiamond carbon plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent metal plate and nondiamond carbon plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent metal and the nondiamond carbon or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 50 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent growth diamond crystal particles is from 50 to 300 .mu.m. The diamond crystals are allowed to grow until their sizes reach at least five times the size of the seeds.
    • 金刚石晶体通过使非金刚石碳,溶剂金属和金刚石晶种的反应材料经受金刚石稳定区域中的压力和温度条件而生长。 反应材料是一对叠加的溶剂金属板和非金刚石碳板或由多对叠加的溶剂金属板和非金刚石碳板制成的桩的形式,并且设置多个种子 在一对叠加的溶剂金属板和非金刚石碳板的一个或每个相对表面上。 或者,反应材料为由溶剂金属和非金刚石碳的混合物制成的板或由多个混合物板制成的堆的形式,并且多个种子设置在每个板的表面上 。 种子具有不大于50μm的粒度,并且以这样的方式规则地设置种子,其距离基本相等,并且每两相邻的生长金刚石晶体颗粒的周边之间的距离为50至300 亩 允许金刚石晶体生长直到其尺寸达到种子大小的至少五倍。