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    • 51. 发明授权
    • Silicon nitride sintered body and process for preparation thereof
    • 氮化硅烧结体及其制备方法
    • US4892848A
    • 1990-01-09
    • US891854
    • 1986-07-29
    • Makoto YoshidaKiyoshi Yokoyama
    • Makoto YoshidaKiyoshi Yokoyama
    • C04B35/584C04B35/593
    • C04B35/5935
    • Disclosed is a process for the preparation of a silicon nitride sintered body, which comprises steps of (i) molding a composition comprising (a) 87 to 98% by weight of silicon nitride and (b) 2 to 13% by weight of a sintering aid comprising an oxide or nitride of aluminum or an element of the group IIIa of the Periodic Table and an inorganic oxide capable of forming a liquid phase component having a melting point lower than that of silicon nitride, the inorganic oxide being present in an amount of 1 to 7% by weight based on the composition, (ii) sintering the molded body in a nitrogen atmosphere at a temperature forming a liquid phase containing said liquid phase component having a low melting point, and (iii) heat-treating the resulting sintered body in a nitrogen atmosphere at a temperature higher than the sintering temperature to volatilize the liquid phase component having a low melting point from the liquid phase.In the obtained sintered body, the oxygen content in the surface layer is controlled below 3% by weight, and the flexural strength at 1300.degree. C. of the surface layer is higher than that of the inner portion.
    • 公开了一种制备氮化硅烧结体的方法,其包括以下步骤:(i)模制组合物,所述组合物包含(a)87至98重量%的氮化硅和(b)2至13重量%的烧结 辅助剂包括铝的氧化物或氮化物或元素周期表IIIa族的元素和能够形成熔点低于氮化硅的液相成分的无机氧化物,无机氧化物以 1〜7重量%,(ii)在形成含有低熔点液相成分的液相的温度下,在氮气气氛中烧结成型体,(iii)对得到的烧结体进行热处理 在氮气气氛中,在高于烧结温度的温度下,从液相挥发具有低熔点的液相成分。 在得到的烧结体中,将表面层的氧含量控制在3重量%以下,表面层的1300℃的弯曲强度高于内部部分的弯曲强度。
    • 55. 发明授权
    • Superplastic forging nitride ceramics
    • 超塑性锻造氮化陶瓷
    • US4732719A
    • 1988-03-22
    • US816040
    • 1986-01-03
    • Prakash C. PandaEdgar R. SeydelRishi Raj
    • Prakash C. PandaEdgar R. SeydelRishi Raj
    • C04B35/58C04B35/581C04B35/593C04B33/32
    • C04B35/645C04B35/593
    • The invention relates to producing relatively flaw free silicon nitride ceramic shapes requiring little or no machining by superplastic forgingThis invention herein was made in part under Department of Energy Grant DE-AC01-84ER80167, creating certain rights in the United States Government. The invention was also made in part under New York State Science and Technology Grant SB1R 1985-10.
    • 本发明涉及生产相对无缺陷的氮化硅陶瓷形状,其需要很少或不需要通过烧结或部分烧结的预制件的超塑性锻造加工。 通过湿式或干式混合制备起始粉末来制备预成型体,该组合物包含重量约70%至约99%的氮化硅,约1%至约30%的液相形成添加剂和0至约7% 冷却至围绕约1至约2.5兆克/立方米的绿色密度的预成型坯,并在大气压下在氮气中在约1400℃至约2200℃的温度下进行至少部分烧结。 超塑性锻造通过使用温度和应变速率将预型件等温地压制成基本上最终形状来进行,使得不发生表面裂纹,例如 利用1650℃的温度,基于2×10 -4秒-1的初始应变速率基本上恒定的位移速率和在石墨模具中的开模处理。 本发明还涉及其他氮化物及其与颗粒碳化钛的复合材料的超塑性锻造。
    • 57. 发明授权
    • Silicon nitride sintered body and method for preparing the same
    • 氮化硅烧结体及其制备方法
    • US4609633A
    • 1986-09-02
    • US602555
    • 1984-04-20
    • Mikio FukuharaYoshitaka Maekawa
    • Mikio FukuharaYoshitaka Maekawa
    • C04B35/584C04B35/593C04B35/58
    • C04B35/593C04B35/584
    • There is disclosed a silicon nitride body consisting essentially of(A) 0.5 to 25% by weight of at least one of oxides, nitrides and oxynitrides of rare earth elements consisting of Sc, Y and lanthanide elements;(B) 0.5 to 25% by weight of at least one of the nitrides and oxynitrides of elements consisting of Be, Mg, Ca, Sr, Ba and Ra in group IIa and/or of nitrides and oxynitrides of elements consisting of B, Al, Ga, In and Tl in group IIIb of the periodic table; and(C) a remainder including Si.sub.3 N.sub.4 and inevitable impurities.The silicon nitride sintered body of this invention has excellent wear resistance and toughness, and is suitable for an industrial production of materials for heat resistant structures.
    • 公开了一种氮化硅体,其主要由(A)0.5〜25重量%的由Sc,Y和镧系元素组成的稀土元素的氧化物,氮化物和氮氧化物中的至少一种组成; (B)IIa中由Be,Mg,Ca,Sr,Ba和Ra组成的元素的氮化物和氮氧化物中的至少一种为0.5〜25重量%,和/或由B,Al组成的元素的氮化物和氮氧化物中的至少一种 ,元素周期表IIIb族中的Ga,In和Tl; 和(C)余量包括Si 3 N 4和不可避免的杂质。 本发明的氮化硅烧结体具有优异的耐磨性和韧性,适用于耐热结构材料的工业化生产。
    • 59. 发明授权
    • Electrolytic Al production with reaction sintered multiphase ceramic
    • 电解铝生产与反应烧结多相陶瓷
    • US4534835A
    • 1985-08-13
    • US454674
    • 1982-12-30
    • Thomas P. DeAngelis
    • Thomas P. DeAngelis
    • C04B35/58C04B35/581C04B35/593C04B35/65C25C3/08C25C3/06
    • C04B35/58092C04B35/58014C04B35/58071C04B35/581C04B35/593C04B35/645C04B35/65C25C3/08
    • Component of electrowinning or electrorefining cell, which component in use is normally in contact with molten aluminum or in electrical contact with another component which is in contact with molten aluminum. Surface and/or inner portion of component is made of ceramic body formed by reaction sintering at pressures ranging from subatmospheric to superatmospheric of reactants, which can be elements, compounds, intermetallic compounds and/or alloys, in stoichiometric proportions to substantially from 5-95 mole percent of first phase or phases being boride, carbide, silicide, and/or sulfide of one or more of the elements of Groups 4b, 5b and 6b, which phases have a maximum grain size substantially not greater than 10 .mu.m. and which body contains 0 to 4 weight percent oxygen. Also production cell, and method of producing aluminum in such cell, with the reaction sintered ceramic component.
    • 电解冶金或电解精炼电池的组分,其中使用的组分通常与熔融铝接触或与与熔融铝接触的另一组分电接触。 部件的表面和/或内部由陶瓷体制成,陶瓷体通过在低于大气压至超大气压的反应烧结下形成,所述反应物可以是化学计量比例的元素,化合物,金属间化合物和/或合金,基本上为5-95 第一相或相的摩尔百分数是组4b,5b和6b中的一种或多种元素的硼化物,碳化物,硅化物和/或硫化物,这些相具有基本上不大于10μm的最大晶粒尺寸。 并且该主体含有0至4重量%的氧气。 还有生产电池,以及在这种电池中生产铝的方法,与反应烧结陶瓷组分。