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51. 发明授权

US07961769B2 Wavelength tunable semiconductor laser device, controller for the same, and control method for the same 有权
标题翻译：波长可调半导体激光器件，控制器相同，控制方法相同
公开(公告)号：US07961769B2
公开(公告)日：2011-06-14
申请号：US12529337
申请日：2008-03-07
申请人： Naoki Fujiwara , Hiroyuki Ishii , Hiromi Oohashi , Hiroshi Okamoto
发明人： Naoki Fujiwara , Hiroyuki Ishii , Hiromi Oohashi , Hiroshi Okamoto
IPC分类号： H01S5/00
CPC分类号： H01S5/06256 , B82Y20/00 , H01S5/0014 , H01S5/024 , H01S5/02407 , H01S5/02461 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/0617 , H01S5/06808 , H01S5/22 , H01S5/2214 , H01S5/34306 , H01S5/4087 , H01S2301/173
摘要： An object is to provide a wavelength tunable semiconductor laser device, a controller for the same and a control method for the same, which prevent wavelength drifts. The wavelength tunable semiconductor laser device includes an active region for oscillating a laser beam, and a wavelength tuning region for shifting a wavelength of the laser beam. In this device, a thermal compensation region for converting most of the inputted electric power to heat is provided adjacent to the wavelength tuning region, and the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.
摘要翻译：本发明的目的是提供一种波长可调谐半导体激光器件，用于其的控制器及其控制方法，其防止波长漂移。波长可调谐半导体激光器件包括用于振荡激光束的有源区域和用于移动激光束波长的波长调谐区域。在该装置中，与波长调谐区域相邻地设置用于将大部分输入的电力转换为热量的热补偿区域，输入到波长调谐区域的电力和输入到热补偿区域的电力的和始终保持不变。

52. 发明申请

US20110128981A1 P-TYPE GROUP III NITRIDE SEMICONDUCTOR AND GROUP III NITRIDE SEMICONDUCTOR ELEMENT 有权
标题翻译： P型III族氮化物半导体和III族氮化物半导体元件
公开(公告)号：US20110128981A1
公开(公告)日：2011-06-02
申请号：US12532564
申请日：2008-03-21
申请人： Toru Kinoshita , Hiroyuki Yanagi , Kazuya Takada
发明人： Toru Kinoshita , Hiroyuki Yanagi , Kazuya Takada
IPC分类号： H01S5/323 , H01L33/00
CPC分类号： H01L33/025 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01S5/3063 , H01S5/3211 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlxGayInzN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X≧0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm−3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.
摘要翻译：本发明提供具有良好p型性质的p型III族氮化物半导体，具有由Al x Ga y In z N表示的组成，其中X，Y和Z各自表示满足X + Y + Z = 1.0的关系的有理数，即使Al含量高达1.0>X≥0.5。实现在本发明的p型III族氮化物半导体中，在30℃至受主杂质原子浓度的空穴浓度的比例为0.001以上，通过掺杂受体杂质原子如Mg的浓度为5 ×1018〜1×1020cm-3的方法，例如MOCVD，注意不要掺杂除受体杂质原子以外的杂质原子，或者在制造由上述表示的III族氮化物半导体时，在晶体中形成位错组成。

53. 发明申请

US20110116525A1 SIDE LIGHT EMITTING TYPE SEMICONDUCTOR LASER DIODE HAVING DIELECTRIC LAYER FORMED ON ACTIVE LAYER 审中-公开
标题翻译：具有活性层形成介电层的侧光发射型半导体激光二极管
公开(公告)号：US20110116525A1
公开(公告)日：2011-05-19
申请号：US13011674
申请日：2011-01-21
申请人： Han-youl Ryu , Kyoung-ho Ha
发明人： Han-youl Ryu , Kyoung-ho Ha
IPC分类号： H01S5/42
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/0655 , H01S5/2063 , H01S5/2222 , H01S5/24 , H01S5/34333 , H01S2301/173
摘要： Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
摘要翻译：提供一种在有源层上形成电介质层的侧面发光型半导体激光二极管。侧面发光型半导体激光二极管包括依次形成在基板上的n包覆层，n导光层，有源层和p导光层，以及在p上形成有脊结构的电介质层指导层。

54. 发明申请

US20110084307A1 METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译：用于生产III族氮化物半导体发光器件的方法，III族氮化物半导体发光器件和灯
公开(公告)号：US20110084307A1
公开(公告)日：2011-04-14
申请号：US12996329
申请日：2009-06-03
申请人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
发明人： Hisayuki Miki , Yasunori Yokoyama , Takehiko Okabe , Kenzo Hanawa
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L21/02458 , C23C14/022 , C23C14/0617 , C30B25/183 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02658 , H01L33/007 , H01L33/12 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/181 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
摘要： One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer (12) made of a group III nitride is laminated on a substrate (11), an n-type semiconductor layer (14) comprising a base layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) are laminated on the buffer layer (12) in this order, comprising: a pretreatment step in which the substrate (11) is treated with plasma; a buffer layer formation step in which the buffer layer (12) having a composition represented by AlxGa1-xN (0≦x
摘要翻译：本发明的一个目的是提供一种具有优异的生产率并生产III族氮化物半导体发光器件和灯的III族氮化物半导体发光器件的制造方法，用于制造III族氮化物半导体的方法在基板（11）上层叠由III族氮化物构成的缓冲层（12）的n型半导体层（14）的发光装置，其特征在于，包括：基底层（14a），发光层（15）和p型半导体层（16）依次层压在缓冲层（12）上，包括：预处理步骤，其中基板（11）用等离子体处理; 缓冲层形成步骤，其中具有由Al x Ga 1-x N（0＆nlE; x <1）表示的组成的缓冲层（12）通过用等离子体激活形成在预处理衬底（11）上并使至少一种金属镓原料和含有V族元素的气体; 以及基底层形成步骤，其中在缓冲层（12）上形成基底层（14a）。

55. 发明授权

US07915620B2 Light-emitting device, electronic apparatus, and light-emitting device manufacturing method 有权
标题翻译：发光装置，电子装置和发光装置的制造方法
公开(公告)号：US07915620B2
公开(公告)日：2011-03-29
申请号：US12369463
申请日：2009-02-11
申请人： Yuichi Ishida , Kazuaki Yazawa , Norikazu Nakayama
发明人： Yuichi Ishida , Kazuaki Yazawa , Norikazu Nakayama
IPC分类号： H01L27/15
CPC分类号： H01L33/645 , H01L33/0079 , H01S5/0224 , H01S5/02415 , H01S5/0261 , H01S5/32341 , H01S2301/173
摘要： Disclosed is a light-emitting device. The light-emitting device includes an EL layer and a heat dissipation layer. The EL layer includes a first semiconductor layer, a second semiconductor layer, and an active layer, the first semiconductor layer having a first conductivity type that is one of n type and p type, the second semiconductor layer having a second conductivity type that is opposite to the first conductivity type, the active layer being provided between the first semiconductor layer and the second semiconductor layer. The heat dissipation layer has the first conductivity type and is bonded to a side of the EL layer closer to the second semiconductor layer than the first semiconductor layer.
摘要翻译：公开了一种发光装置。发光器件包括EL层和散热层。 EL层包括第一半导体层，第二半导体层和有源层，第一半导体层具有作为n型和p型之一的第一导电类型，第二半导体层具有相反的第二导电类型对于第一导电类型，有源层设置在第一半导体层和第二半导体层之间。散热层具有第一导电类型，并且被结合到比第一半导体层更靠近第二半导体层的EL层的一侧。

56. 发明授权

US07899103B2 Side light emitting type semiconductor laser diode having dielectric layer formed on active layer 失效
标题翻译：具有形成在有源层上的电介质层的侧面发光型半导体激光二极管
公开(公告)号：US07899103B2
公开(公告)日：2011-03-01
申请号：US11545546
申请日：2006-10-11
申请人： Han-youl Ryu , Kyoung-ho Ha
发明人： Han-youl Ryu , Kyoung-ho Ha
IPC分类号： H01L21/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0422 , H01S5/0425 , H01S5/0655 , H01S5/2063 , H01S5/2222 , H01S5/24 , H01S5/34333 , H01S2301/173
摘要： Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
摘要翻译：提供一种在有源层上形成电介质层的侧面发光型半导体激光二极管。侧面发光型半导体激光二极管包括依次形成在基板上的n包覆层，n导光层，有源层和p导光层，以及在p上形成有脊结构的电介质层指导层。

57. 发明申请

US20110007767A1 Semiconductor Component and Method for Producing a Semiconductor Component 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US20110007767A1
公开(公告)日：2011-01-13
申请号：US12863673
申请日：2009-03-09
申请人： Christoph Eichler , Uwe Strauss
发明人： Christoph Eichler , Uwe Strauss
IPC分类号： H01S5/323 , H01L21/66
CPC分类号： H01L22/10 , H01L22/12 , H01S5/22 , H01S2301/173
摘要： A semiconductor component includes a semiconductor body with a semiconductor layer sequence having an active region, provided for generating coherent radiation, and an indicator layer. With respect to an interface which delimits the semiconductor body in regions in a vertical direction, on that side of said interface which is remote from the active region, the semiconductor body has a web-like region extending in a vertical direction between the interface and a surface of the semiconductor body. The indicator layer has a material composition that differs from that of the material of the web-like region which adjoins the indicator layer. A distance between the indicator layer and the surface is at most of the same magnitude as a distance between the interface and the surface.
摘要翻译：半导体部件包括具有半导体层序列的半导体本体，其具有用于产生相干辐射的有源区域和指示层。关于在垂直方向的区域中限定半导体本体的界面，在远离有源区的所述界面的该侧，半导体本体具有在界面和a之间沿垂直方向延伸的网状区域半导体体的表面。指示剂层具有与邻接指示剂层的网状区域的材料组成不同的材料组成。指示剂层和表面之间的距离与界面和表面之间的距离最大相同的大小。

58. 发明申请

US20100317136A1 METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING DEVICE, METHOD FOR GROWING NITRIDE TYPE III-V GROUP COMPOUND SEMICONDUCTOR LAYER, METHOD FOR GROWING SEMICONDUCTOR LAYER, AND METHOD FOR GROWING LAYER 审中-公开
标题翻译：用于制造半导体发光装置的方法，用于生产半导体器件的方法，用于制造器件的方法，用于生长氮化物III-V族化合物半导体层的方法，用于生长半导体层的方法和用于生长层的方法
公开(公告)号：US20100317136A1
公开(公告)日：2010-12-16
申请号：US12824593
申请日：2010-06-28
申请人： Katsunori Yanashima , Kensaku Motoki
发明人： Katsunori Yanashima , Kensaku Motoki
IPC分类号： H01L33/30
CPC分类号： C30B29/403 , B82Y20/00 , C30B25/02 , H01L21/02389 , H01L21/0243 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01S5/0202 , H01S5/2004 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/3215 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A method for producing a semiconductor light emitting device is disclosed. The method comprises the step of growing a nitride type III-V group compound semiconductor layer that forms a light emitting device structure on a principal plane of a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce a semiconductor light emitting device, the second average dislocation density being greater than the first average dislocation density. The nitride type III-V group compound semiconductor layer does not directly contact the second regions on the principal plane of the nitride type III-V group compound semiconductor substrate.
摘要翻译：公开了一种制造半导体发光器件的方法。该方法包括在氮化物III-V族化合物半导体衬底的主平面上生长形成发光器件结构的氮化物III-V族化合物半导体层的步骤，其中多个第二区域由晶体具有第二平均位错密度的第二平均位错密度规则地布置在由具有第一平均位错密度的晶体制成的第一区域中以产生半导体发光器件，第二平均位错密度大于第一平均位错密度。氮化物III-V族化合物半导体层不直接接触氮化物III-V族化合物半导体衬底的主面上的第二区域。

59. 发明申请

US20100297784A1 NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20100297784A1
公开(公告)日：2010-11-25
申请号：US12852060
申请日：2010-08-06
申请人： Masaki UENO , Yohei ENYA , Takashi KYONO , Katsushi AKITA , Yusuke YOSHIZUMI , Takamichi SUMITOMO , Takao NAKAMURA
发明人： Masaki UENO , Yohei ENYA , Takashi KYONO , Katsushi AKITA , Yusuke YOSHIZUMI , Takamichi SUMITOMO , Takao NAKAMURA
IPC分类号： H01L21/66
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L33/18 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/2009 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/3407 , H01S2301/173 , H01S2304/04
摘要： In the nitride based semiconductor optical device LE1, the strained well layers 21 extend along a reference plane SR1 tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. The tilt angle α is in the range of greater than 59 degrees to less than 80 degrees or greater than 150 degrees to less than 180 degrees. A gallium nitride based semiconductor layer P is adjacent to a light-emitting layer SP− with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer W3 is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer P is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer SP− and the gallium nitride based semiconductor layer P.

60. 发明授权

US07838893B2 Semiconductor optical device 有权
标题翻译：半导体光学器件
公开(公告)号：US07838893B2
公开(公告)日：2010-11-23
申请号：US11232242
申请日：2005-09-22
申请人： Tsukuru Katsuyama , Jun-ichi Hashimoto
发明人： Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01L29/00
CPC分类号： H01S5/18308 , H01L33/02 , H01L33/105 , H01S5/18341 , H01S5/18358 , H01S5/3211 , H01S5/3235 , H01S2301/173
摘要： A semiconductor optical device comprises a first conductive type semiconductor region, an active layer provided on the second semiconductor portion of the first conductive type semiconductor region, a second conductive type semiconductor region on the side and top of the active layer, the side of the second semiconductor portion, and the second region of the first semiconductor portion of the first conductive type semiconductor region, a potential adjusting semiconductor layer provided between the second semiconductor portion of the first conductive type semiconductor region and the active layer, and first and second distributed Bragg reflector portions between which the first conductive type semiconductor region, the active layer and the second conductive type semiconductor region is provided. Bandgap energies of the first conductive type semiconductor region and second conductive type semiconductor region are greater than that of the active layer. The second region of the first semiconductor portion of the first conductive type semiconductor region and the second conductive type semiconductor region constitute a pn junction. A bandgap energy of the potential adjusting semiconductor layer is different from bandgap energies of the first conductive type semiconductor region and the second conductive type semiconductor region.
摘要翻译：半导体光学器件包括第一导电类型半导体区域，设置在第一导电类型半导体区域的第二半导体部分上的有源层，在有源层的侧面和顶部上的第二导电类型半导体区域，第二导电类型半导体区域半导体部分和第一导电类型半导体区域的第一半导体部分的第二区域，设置在第一导电类型半导体区域的第二半导体部分和有源层之间的电位调节半导体层，以及第一和第二分布布拉格反射器设置有第一导电型半导体区域，有源层和第二导电型半导体区域的部分。第一导电型半导体区域和第二导电型半导体区域的带隙能量大于有源层的带隙能量。第一导电型半导体区域和第二导电型半导体区域的第一半导体部分的第二区域构成pn结。电位调整用半导体层的带隙能不同于第一导电型半导体区域和第二导电型半导体区域的带隙能量。

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