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51. 发明授权

US5536965A Porous thermal isolation mesas for hybrid uncooled infrared detectors 失效
标题翻译：用于混合非制冷红外探测器的多孔热隔离台面
公开(公告)号：US5536965A
公开(公告)日：1996-07-16
申请号：US479378
申请日：1995-06-07
申请人： Howard R. Beratan , Chih-Chen Cho , Scott R. Summerfelt
发明人： Howard R. Beratan , Chih-Chen Cho , Scott R. Summerfelt
IPC分类号： H01L27/146 , H01L37/02 , H01L31/00 , H01L31/058
CPC分类号： H01L27/1465 , H01L37/02 , Y10T29/49169
摘要： Thermal isolation mesas 36 comprising a porous material 64 are used to thermally insulate sensing integrated circuitry 44 from pixels 34 of an uncooled IR detector hybrid system 30. The porous material 64 is preferably a silicon-dioxide xerogel. The mesas 36 may also comprise a protective film 66.
摘要翻译：包括多孔材料64的隔热台面36用于将感测集成电路44与未经IR的IR检测器混合系统30的像素34热绝缘。多孔材料64优选为二氧化硅干凝胶。台面36还可以包括保护膜66。

52. 发明授权

US5478242A Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
标题翻译：通过各向异性蚀刻对混合热探测器进行热隔离
公开(公告)号：US5478242A
公开(公告)日：1995-12-26
申请号：US236778
申请日：1994-04-29
申请人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
发明人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
IPC分类号： H01L27/146 , H01L37/02 , H01L31/18
CPC分类号： H01L37/02 , H01L27/1465
摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
摘要翻译：热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26）电路基板（12）。在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成（24），用于改善热隔离。凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。导体（108）沿着通孔（110）的壁和覆盖接触垫（104）沉积在台面型结构（102）的顶部上。使用导体（108）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料（118）以改善热隔离。

53. 发明授权

US5376558A Method of fabricating a semiconductor image pickup device 失效
标题翻译：制造半导体图像拾取装置的方法
公开(公告)号：US5376558A
公开(公告)日：1994-12-27
申请号：US041462
申请日：1993-04-02
申请人： Gen Sudo , Soichiro Hikida
发明人： Gen Sudo , Soichiro Hikida
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14623 , H01L27/1465 , H01L27/1469
摘要： A method for fabricating a semiconductor image pickup device for detecting a light image includes a step of forming an array of detector elements, each of which generates an electronic signal in response to light incident thereto, and a step of forming a light absorbing layer which is situated to optically isolate each of the detector elements. The array of detector elements in the light absorbing layer can be formed on a substrate. In one embodiment, the light absorbing layer is produced by forming a first layer contacting with each of the detector elements which has a first refractive index, forming a second layer contacting with the first layer which has a second refractive index greater than the first refractive index of the first layer, and forming a metal layer contacting with the second layer. By forming the light absorbing layer in this manner, the array of detecting elements can be optically isolated from each other so that problems such as cross-talk, for example, can be reduced.
摘要翻译：一种用于制造用于检测光图像的半导体图像拾取装置的方法包括形成检测器元件阵列的步骤，每个检测器元件响应于入射到其中的光产生电子信号，并且形成光吸收层的步骤是位于以光学方式隔离每个检测器元件。光吸收层中的检测器元件的阵列可以形成在基板上。在一个实施例中，光吸收层通过形成与具有第一折射率的每个检测器元件接触的第一层来形成，形成与第一层接触的第二层，第二层具有大于第一折射率的第二折射率并形成与第二层接触的金属层。通过以这种方式形成光吸收层，检测元件的阵列可以彼此光学隔离，从而可以减少例如串扰等问题。

54. 发明授权

US5371352A Photodetector comprising a test element group of PN junctions and including a mask having at least one window spaced apart from the PN junctions 失效
标题翻译：光检测器包括PN结的测试元件组，并且包括具有至少一个与PN结相隔开的窗口的掩模
公开(公告)号：US5371352A
公开(公告)日：1994-12-06
申请号：US85990
申请日：1993-07-06
申请人： Yasuaki Yoshida
发明人： Yasuaki Yoshida
IPC分类号： G01R31/26 , G01R31/28 , H01L21/66 , H01L23/544 , H01L27/14 , H01L27/146 , H01L31/10 , H01L31/18
CPC分类号： H01L22/14 , G01R31/2635 , G01R31/2831 , H01L22/34 , H01L27/14623 , H01L27/1465
摘要： A photodetector includes a light responsive element including a semiconductor layer having a plurality of first spaced apart p-n junctions for generating electrical signals in response to incident light, a test element group (TEG) for testing an electrical characteristic of the first p-n junctions, the test element group including a plurality of second spaced apart p-n junctions in the semiconductor layer, and a light shielding mask covering the second spaced apart p-n junctions and preventing incident light from reaching the second spaced apart p-n junctions. The light shielding mask includes at least one window transmitting light, and the window is spaced from each of the second spaced apart p-n junctions. During testing of the electrical characteristics of the photodetector using the TEG, light is not incident directly on the second p-n junctions of the TEG but incident on the semiconductor layer through the window spaced from the second p-n junctions, and the maximum diffusion length of the minority charge carriers in the light responsive element is detected from the result of the test using the TEG. Therefore, the spatial resolution of the photodetector included in a wafer is monitored, and the photodetector is distinguished as defective and nondefective according to the monitored spatial resolution.
摘要翻译：光检测器包括光响应元件，其包括具有多个第一间隔开的pn结的半导体层，用于响应于入射光产生电信号;测试元件组（TEG），用于测试第一pn结的电特性，测试在半导体层中包括多个第二间隔开的pn结的元件组，以及覆盖第二间隔开的pn结的防光掩模，并防止入射光到达第二间隔开的pn结。遮光掩模包括至少一个透光的窗口，并且窗口与每个第二间隔开的p-n结线分开。在使用TEG的光电检测器的电特性测试期间，光不直接入射到TEG的第二pn结上，而是通过与第二pn结隔开的窗口入射到半导体层上，并且少数的最大扩散长度从使用TEG的测试结果中检测光响应元件中的电荷载体。因此，监视包括在晶片中的光电检测器的空间分辨率，并且根据监视的空间分辨率将光电检测器区分为有缺陷且无缺陷。

55. 发明授权

US5332899A System for converting an infrared image into a visible or near infrared image 失效
标题翻译：用于将红外图像转换成可见光或近红外图像的系统
公开(公告)号：US5332899A
公开(公告)日：1994-07-26
申请号：US063333
申请日：1993-05-19
申请人： Michel Wolny , Daniel Amingual
发明人： Michel Wolny , Daniel Amingual
IPC分类号： F41G1/32 , G02B23/00 , H01L27/146 , H01L27/15 , H01L31/147 , H01L31/153 , H04N5/33 , H04N7/18 , H01L31/14
CPC分类号： H01L31/147 , H01L27/1465 , H01L27/1467 , H01L27/15 , H01L31/153 , H01L2224/16225 , H01L2924/10158 , H04N5/33
摘要： A system for the conversion of an infrared image into a visible or near infrared image includes optical input and output devices, an infrared detector on which is formed an infrared image of a scene, a circuit for reading the signal supplied by the detector, a circuit for processing the signals from the reading circuit, a visible or near infrared light emitter for supplying the image in the form of visible or near infrared light from signals of the processing circuit, a circuit for addressing the emitter, and a substrate. One face of the substrate forms a focal plane common to the optical input and output devices. The detector, the reading, processing, and addressing circuits, as well as the emitter, are integrated in this focal plane.
摘要翻译：用于将红外图像转换成可见光或近红外图像的系统包括光输入和输出装置，其上形成有场景的红外图像的红外检测器，用于读取由检测器提供的信号的电路，用于处理来自读取电路的信号，可见光或近红外光发射器，用于从处理电路的信号，用于寻址发射极的电路和基板提供可见光或近红外光的形式的图像。基板的一个面形成光输入和输出装置共同的焦平面。检测器，读取，处理和寻址电路以及发射器被集成在该焦平面中。

56. 发明授权

US5227656A Electro-optical detector array 失效
标题翻译：电光检测器阵列
公开(公告)号：US5227656A
公开(公告)日：1993-07-13
申请号：US609678
申请日：1990-11-06
申请人： Harold A. Timlin , Charles J. Martin
发明人： Harold A. Timlin , Charles J. Martin
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0264
CPC分类号： H01L27/1465 , Y10S438/977
摘要： Each diode of an indium antimonide electro-optical detector array on a dielectric backing transparent to optical energy to be detected includes a junction that less than about a half micron from the diode surface on which the energy is initially incident. The optical energy is incident on a P-type doped region prior to being incident on a bulk N-type doped region. Both P- and N-type doped regions of adjacent diodes are spaced from each other. Metal electrically connects the P-type doped regions together without interfering substantially with the incident optical energy. A multiplexer integrated circuit substrate extends parallel to the backing and includes an array of elements for selective readout of the electric property of the diodes. The elements and diodes have approximately the same topographical arrangement so that corresponding ones of the elements and diodes are aligned. An array of indium columns or bumps connects the corresponding aligned elements and diodes.

57. 发明授权

US5168338A Solid-state hybrid infrared imaging device 失效
标题翻译：固态混合红外成像装置
公开(公告)号：US5168338A
公开(公告)日：1992-12-01
申请号：US884762
申请日：1992-05-18
申请人： Norimasa Kumada , Yoshihiro Hisa , Yasuaki Yoshida
发明人： Norimasa Kumada , Yoshihiro Hisa , Yasuaki Yoshida
IPC分类号： H01L27/14 , H01L27/146 , H01L31/10
CPC分类号： H01L27/1465
摘要： A solid-state imaging device includes a photodiode array having a plurality of pixels, each pixel including a second conductivity type region formed in a first conductivity type semiconductor layer, an electrode common to all the pixels and disposed on the first conductivity type semiconductor layer, a signal transfer part for transferring signal charges generated in the pixels and a DC voltage source for applying a DC voltage in a forward direction to the pixels. The reverse bias voltage applied to a photodiode due to the voltage applied by the signal input stage of the signal transfer part is canceled by the forward DC voltage applied to the common electrode. As a result, the operating points of the pixels are uniform when nearly zero bias voltage is applied to the pixels.
摘要翻译：固态成像装置包括具有多个像素的光电二极管阵列，每个像素包括形成在第一导电类型半导体层中的第二导电类型区域，所有像素共同设置并设置在第一导电类型半导体层上的电极，用于传送在像素中生成的信号电荷的信号传送部分和用于向正方向施加直流电压的直流电压源。由于由信号传输部分的信号输入级施加的电压而施加到光电二极管的反向偏置电压被施加到公共电极的正向直流电压抵消。结果，当将近零偏压施加到像素时，像素的工作点是均匀的。

58. 发明授权

US5131584A Method to interconnect electric components by means of solder elements 失效
标题翻译：通过焊接元件互连电气元件的方法
公开(公告)号：US5131584A
公开(公告)日：1992-07-21
申请号：US508807
申请日：1990-04-12
申请人： Michelle Boitel , Francois Marion , Jean-Louis Pornin , Michel Ravetto
发明人： Michelle Boitel , Francois Marion , Jean-Louis Pornin , Michel Ravetto
IPC分类号： H01L21/60 , H01L21/98 , H05K3/34
CPC分类号： H01L24/81 , H01L24/75 , H01L25/50 , H01L27/14634 , H01L27/1465 , H01L27/1469 , H01L27/14696 , H01L2224/16225 , H01L2224/75 , H01L2224/7565 , H01L2224/81815 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01057 , H01L2924/01058 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/14 , H05K3/3436
摘要： Method and machine to interconnect electric components by welding elements.The components (20,24) are provided with electric contact blocks and, given the fact that two components are to be interconnected, the blocks of one of these components are covered with welding elements made of a low melting point metallic material able to be welded to the blocks, the latter being wettable by the material in its molten state, whereas their environment is not so. The components are placed in contact so that these elements cover the corresponding blocks of the other component and the assembly obtained is heated to a temperature enabling the material to be melted.Application for microelectronics.
摘要翻译：通过焊接元件互连电气元件的方法和机器。组件（20,24）设置有电接触块，并且考虑到两个部件要相互连接的事实，这些部件之一的块被由能够被焊接的低熔点金属材料制成的焊接元件覆盖这些块可以被熔融状态的材料润湿，而它们的环境不是这样。这些部件被放置成接触，使得这些元件覆盖另一部件的相应块，并且所获得的组件被加热到能使材料熔化的温度。微电子应用。

59. 发明授权

US4910154A Manufacture of monolithic infrared focal plane arrays 失效
公开(公告)号：US4910154A
公开(公告)日：1990-03-20
申请号：US289959
申请日：1988-12-23
申请人： Ken Zanio , Ross C. Bean
发明人： Ken Zanio , Ross C. Bean
IPC分类号： H01L27/146
CPC分类号： H01L27/1465 , Y10S148/064
摘要： The manufacture of monolithic HgCdTe detectors and Si circuitry in an IR focal plane array is achieved by forming a protective layer of SiO.sub.2 or SiN.sub.x on a silicon wafer containing silicon circuits, etching steep-wall recesses into the wafer, selectively depositing epitaxial single-crystal layers of GaAs, CdTe, and HgCdTe in the recesses fabricating HgCdTe IR arrays, and depositing appropriate insulating and conductive interconnection patterns to interconnect the Si devices with one another and the HgCdTe devices with the Si devices. Little or no GaAs, CdTe, and HgCdTe grows on the SiO.sub.2 or SiN.sub.x outside the recesses. Since material grown outside the recess is polycrystalline, it is easily chemomechanically removed.

60. 发明授权

US12027562B2 Imaging element and semiconductor element 有权
公开(公告)号：US12027562B2
公开(公告)日：2024-07-02
申请号：US17437101
申请日：2020-03-13
申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION
发明人： Shinichi Miyake , Hirofumi Yamashita
IPC分类号： H01L27/146 , H04N25/778 , H04N25/79 , H04N25/75
CPC分类号： H01L27/1465 , H01L27/14605 , H04N25/778 , H04N25/79 , H01L27/14641 , H04N25/75
摘要： An imaging element according to an embodiment of the present disclosure includes a first semiconductor substrate, and a second semiconductor substrate stacked over the first semiconductor substrate with an insulating layer interposed therebetween. The first semiconductor substrate includes a photoelectric conversion section, and a charge-holding section that holds charges transferred from the photoelectric conversion section. The second semiconductor substrate includes an amplification transistor that generates a signal of a voltage corresponding to a level of charges held in the charge-holding section. The amplification transistor includes a channel region, a source region, and a drain region in a plane intersecting a front surface of the second semiconductor substrate, and includes a gate electrode being opposed to the channel region with a gate insulating film interposed therebetween and being electrically coupled to the charge-holding section.

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