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51. 发明授权

US5763296A Method for fabricating an electronic device structure with studs locating lead frame on backing plate 失效
标题翻译：用于制造具有在背板上定位引线框架的螺柱的电子装置结构的方法
公开(公告)号：US5763296A
公开(公告)日：1998-06-09
申请号：US289773
申请日：1994-08-12
申请人： Paolo Casati , Marziano Corno , Giuseppe Marchisi
发明人： Paolo Casati , Marziano Corno , Giuseppe Marchisi
IPC分类号： H01L21/60 , H01L23/28 , H01L23/29 , H01L23/433 , H01L23/495 , H01L23/50 , H01L21/56 , H01L21/58
CPC分类号： H01L24/49 , H01L23/4334 , H01L23/49541 , H01L23/49579 , H01L2224/05553 , H01L2224/05554 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2224/49175 , H01L2224/85207 , H01L24/45 , H01L24/48 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1301 , H01L2924/14 , H01L2924/181
摘要： A process for making an electronic device structure which comprises a metal plate, a semiconductor material chip attached to the plate, terminal leads, interconnection wires between the leads and metallized regions of the chip, and a plastic body which encapsulates the whole with the exception of a surface of the plate and part of the leads. This structure has means of electrical connection between at least one metallized region and the metal plate which comprise at least one metal beam resting onto the plate and being attached thereto by studs integral with the plate, and at least one wire welded between a metallized region of the chip and the metal beam between the studs. At least a portion of the beam and its connection wire are encapsulated within the plastics body.
摘要翻译：一种用于制造电子器件结构的方法，包括金属板，附着在板上的半导体材料芯片，端子引线，芯片的引线和金属化区域之间的互连线，以及封装整体的塑料体，除了板的表面和引线的一部分。该结构具有在至少一个金属化区域和金属板之间的电连接的装置，该金属板包括至少一个搁置在板上的金属梁，并通过与板成一体的螺柱与其连接，以及至少一根焊接在金属化区域芯片和金属梁之间的螺柱。梁和其连接线的至少一部分被封装在塑料体内。

52. 发明授权

US5728599A Printable superconductive leadframes for semiconductor device assembly 失效
标题翻译：用于半导体器件组装的可印刷超导引线框架
公开(公告)号：US5728599A
公开(公告)日：1998-03-17
申请号：US432539
申请日：1995-08-07
申请人： Michael D. Rostoker , Mark Schneider , Chok J. Chia
发明人： Michael D. Rostoker , Mark Schneider , Chok J. Chia
IPC分类号： H01L21/48 , H01L23/495 , H01L21/283 , H01L21/58 , H01L21/60
CPC分类号： H01L24/50 , H01L21/4821 , H01L23/49579 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01021 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , H01L2924/181 , Y10S505/703 , Y10S505/706 , Y10S505/741 , Y10T29/49121
摘要： Process for manufacturing a high interconnection density, fine-line, superconductive printed leadframes using thick-film screen-printing techniques, or other printing techniques. Generally, a superconductive leadframe pattern is printed on a backing substrate. Once the pattern is cured, the backing substrate, or portions thereof can be removed. The backing substrate can be a "fish paper" substrate treated with a release agent, or other substrate material which can be dissolved away, etched away, or otherwise removed. Portions of the backing substrate can be used to provide mechanical integrity for the leadframe. The leadframe fingers can be printed using a superconductive paste or a superconductive precursor paste which is subsequently treated to exhibit superconductivity.
摘要翻译：使用厚膜丝网印刷技术制造高互连密度，细线，超导印刷引线框的方法或其它印刷技术。通常，超导引线框架图案印刷在背衬基板上。一旦图案固化，背衬基底或其部分可以被去除。背衬基材可以是用脱模剂处理的“鱼纸”基材，或可以溶解掉，蚀刻掉或以其它方式除去的其它基材。背衬基板的一部分可用于为引线框架提供机械完整性。引线框指可以使用超导糊或超导前体糊进行印刷，其随后被处理以显示超导性。

53. 发明授权

US5619065A Semiconductor package and method for assembling the same 失效
标题翻译：半导体封装及其组装方法
公开(公告)号：US5619065A
公开(公告)日：1997-04-08
申请号：US308624
申请日：1994-09-19
申请人： Young S. Kim
发明人： Young S. Kim
IPC分类号： H01L21/52 , H01L21/48 , H01L21/50 , H01L21/56 , H01L21/60 , H01L21/603 , H01L23/04 , H01L23/31 , H01L23/495 , H01L23/50 , H01L23/48 , H01L23/52
CPC分类号： H01L23/49579 , H01L21/4835 , H01L21/50 , H01L21/56 , H01L21/565 , H01L23/3142 , H01L23/4951 , H01L23/49517 , H01L23/49541 , H01L23/49548 , H01L23/49555 , H01L23/49558 , H01L24/29 , H01L24/83 , H01L2224/16245 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/29298 , H01L2224/48091 , H01L2224/48247 , H01L2224/49175 , H01L2224/8319 , H01L2224/83801 , H01L2224/84205 , H01L2224/85205 , H01L24/48 , H01L24/49 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/157 , H01L2924/16195 , H01L2924/181
摘要： A semiconductor package including a semiconductor chip having at its upper surface a plurality of bonding pads and a tape lead frame having a paddle on which a semiconductor chip is laid, a plurality of inner leads each having a sufficient length to be directly connected with each corresponding bonding pad of the semiconductor chip and a plurality of outer leads each connected with each corresponding inner lead and having a thickness larger than that of the inner lead. The semiconductor chip is die bonded on the paddle of the tape lead frame. An insulating layer is formed over the upper surface of the semiconductor chip except for portions corresponding the bonding pads. Each inner lead has at its one end a bonding bumper for electrically connecting the inner lead with each corresponding bonding pad. Using the epoxy molding compound, the inner leads and the paddle of the tape lead frame, the semiconductor and the insulating layer are molded. Each of the outer leads has a predetermined shaped portion exposed externally from the package.
摘要翻译：一种半导体封装，包括在其上表面具有多个接合焊盘的半导体封装和具有其上铺设有半导体芯片的焊盘的带引线框架，多个内引线，每个内引脚具有足够的长度以与每个对应的直接连接半导体芯片的接合焊盘和多个外引线，每个外引线与每个相应的内引线连接，并且具有比内引线的厚度更大的厚度。半导体芯片被芯焊在带引线框架的桨上。除了与焊盘对应的部分之外，在半导体芯片的上表面上形成绝缘层。每个内部引线在其一端具有用于将内部引线与每个对应的焊盘电连接的接合保险杠。使用环氧树脂模塑料，将带引线框架，半导体和绝缘层的内引线和桨形成。每个外引线具有从封装外部露出的预定成形部分。

54. 发明授权

US5463247A Lead frame material formed of copper alloy for resin sealed type semiconductor devices 失效
标题翻译：用于树脂密封型半导体器件的铜合金形成的引线框架材料
公开(公告)号：US5463247A
公开(公告)日：1995-10-31
申请号：US196316
申请日：1994-02-15
申请人： Rensei Futatsuka , Shunichi Chiba , Junichi Kumagai
发明人： Rensei Futatsuka , Shunichi Chiba , Junichi Kumagai
IPC分类号： C22C9/06 , H01L23/495 , H01L23/48 , H01L29/44 , H01L29/52 , H01L29/60
CPC分类号： C22C9/06 , H01L23/49579 , H01L2924/0002
摘要： There is provided a lead frame material formed of a Cu alloy for a resin sealed type semiconductor device, wherein the Cu alloy consists essentially of 2 to 4% Ni, more than 0.5 to 1%, Si, 0.1 to 2% Zn, more than 0.01 to 0.05%, Mg, 0.05 to 1% Sn, and the balance of Cu and inevitable impurities, the inevitable impurities containing 20 ppm or less sulfur (S) and 20 ppm or less carbon (C). The lead frame material formed of the Cu alloy has improved adhesion strength to an epoxy resin as a sealing material. A semiconductor device prepared from said lead frame material is also provided.
摘要翻译：提供由用于树脂密封型半导体器件的Cu合金形成的引线框架材料，其中Cu合金基本上由2至4％的Ni，大于0.5至1％的Si，0.1至2％的Zn，大于 0.01〜0.05％，Mg，0.05〜1％Sn，余量为Cu和不可避免的杂质，不可避免的杂质含有20ppm以下的硫（S）和20ppm以下的碳（C）。由Cu合金形成的引线框架材料具有改善的作为密封材料的环氧树脂的粘合强度。还提供了由所述引线框架材料制备的半导体器件。

55. 发明授权

US5134459A Lead frame for semiconductor device 失效
标题翻译：半导体器件引线框架
公开(公告)号：US5134459A
公开(公告)日：1992-07-28
申请号：US623668
申请日：1991-03-01
申请人： Takao Maeda , Tomohiko Ihara , Masaharu Yasuhara , Shosaku Yamanaka
发明人： Takao Maeda , Tomohiko Ihara , Masaharu Yasuhara , Shosaku Yamanaka
IPC分类号： H01L23/495
CPC分类号： H01L24/48 , H01L23/49579 , H01L23/49582 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48599 , H01L2224/73265 , H01L24/45 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/30107
摘要： A lead frame for a high-density, sealed type of semiconductor device having many input/output pins and capable of high-speed operation is made of a magnetic material with a covering layer of a non-magnetic metal. The covering layer covers a top surface, a bottom surface, both side surfaces and an inner end face of a portion of the leads of the lead frame which is to be sealed in a semiconductor package. The covering layer has a thickness of 1 micron or more at both side surfaces of each lead. Therefore, the inductance at the leads can be reduced remarkably. Thus, the semiconductor can be operated at a high speed with improved reliability.

56. 发明授权

US5067007A Semiconductor device having leads for mounting to a surface of a printed circuit board 失效
标题翻译：具有用于安装到印刷电路板表面的引线的半导体器件
公开(公告)号：US5067007A
公开(公告)日：1991-11-19
申请号：US645357
申请日：1991-01-24
申请人： Kanji Otsuka , Masao Kato , Takashi Kumagai , Mitsuo Usami , Shigeo Kuroda , Kunizo Sahara , Takeo Yamada , Seiji Miyamoto , Yuuji Shirai , Takayuki Okinaga , Kazutoshi Kubo , Hiroshi Tachi , Masayuki Kawashima
发明人： Kanji Otsuka , Masao Kato , Takashi Kumagai , Mitsuo Usami , Shigeo Kuroda , Kunizo Sahara , Takeo Yamada , Seiji Miyamoto , Yuuji Shirai , Takayuki Okinaga , Kazutoshi Kubo , Hiroshi Tachi , Masayuki Kawashima
IPC分类号： H01L23/50 , H01L23/433 , H01L23/495 , H01L23/498 , H05K3/34
CPC分类号： H01L23/49555 , H01L23/433 , H01L23/49579 , H01L23/49811 , H05K3/3426 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/73253 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01013 , H01L2924/01025 , H01L2924/01029 , H01L2924/01039 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/15174 , H01L2924/15312 , H01L2924/16152 , H01L2924/19105 , H01L2924/3011 , H05K2201/0308 , H05K2201/10318 , H05K2201/10681 , H05K2201/10704 , H05K2201/10909 , H05K2201/2081 , Y02P70/613
摘要： Attempts have been made to increase the number of pins of packages accompanying the trend toward fabricating integrated circuits highly densely and in smaller sizes. The present invention provides technology for improving reliability in fabricating packages of the surface-mounted type that have increased number of pins. That is, when the packages are mounted on the wiring substrate, the lead pins that receive load from the axial direction exhibit bending strength which is smaller than the junction strength of solder at the junction portions. To achieve this object, the lead pins are made of a material having large resiliency such as a fiber-reinforced material, a transformation pseudo elastic material, an ultra-high tension material, or a heat-resistant ultra-high tension material.
摘要翻译：随着制造高密度和小尺寸集成电路的趋势，已经尝试增加封装引脚的数量。本发明提供了提高具有增加的引脚数的表面安装型封装的可靠性的技术。也就是说，当封装被安装在布线基板上时，从轴向接收负载的引线销显示出小于接合部处的焊料的接合强度的弯曲强度。为了实现该目的，引脚由具有大弹性的材料制成，例如纤维增强材料，变形假弹性材料，超高张力材料或耐热超高张力材料。

57. 发明授权

US4885029A Thin section dispersion strengthened copper body and method of making same 失效
标题翻译：薄截面分散强化铜体及其制作方法
公开(公告)号：US4885029A
公开(公告)日：1989-12-05
申请号：US176793
申请日：1988-04-01
申请人： Thomas B. Buerkle , Jack D. Troxell
发明人： Thomas B. Buerkle , Jack D. Troxell
IPC分类号： C22C32/00 , H01L21/48 , H01L23/495
CPC分类号： H01L21/4842 , C22C32/0021 , H01L23/49579 , H01L24/97 , H01L2924/14 , H01L2924/15747
摘要： A thin section fibrous, unrecrystallized dispersion strengthened copper body suitable for use in the manufacture of lead frames for integrated circuits and a method for making same.
摘要翻译：适用于制造集成电路引线框架的薄截面纤维状，未再结晶的分散强化铜体及其制造方法。

58. 发明授权

US4872048A Semiconductor device having copper alloy leads 失效
标题翻译：具有铜合金引线的半导体器件
公开(公告)号：US4872048A
公开(公告)日：1989-10-03
申请号：US166217
申请日：1988-03-10
申请人： Hidetoshi Akutsu , Takuro Iwamura , Masao Kobayashi
发明人： Hidetoshi Akutsu , Takuro Iwamura , Masao Kobayashi
IPC分类号： C22C9/00 , H01L23/495
CPC分类号： C22C9/00 , H01L23/49579 , H01L2924/0002
摘要： A semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains 0.05-1% of Cr, 0.005-0.3% of Zr, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.1% of Si and 0.001-0.3% of at least one element selected from the group consisting of P, Mg, Al, Zn and Mn, with the balance being Cu and no more than 0.1% of incidental impurities, the percent being on a weight basis. The invention also provides a semiconductor device having leads of high strength and elongation and which consist essentially of a copper alloy that contains either 0.05-1% of Cr or 0.005-0.3% of Zr or both, 0.001-0.05% of Li, 0-1% of Ni, 0-1% of Sn, 0-1% of Ti, 0-0.1% of Si and which further contains one or more of 0-2% of a metal selected from the group consisting of Fe, Co and Be, 0-1% of a metal selected from the group consisting of Mg, Al, Zn, Mn, B, P, Y and a rare earth element, and 0-2% of a metal selected from the group consisting of Nb, V, Ta, Hf, Mo and W, the percent being on a weight basis, with the balance being copper and incidental impurities, and which has a structure wherein the average grain size of any eutectic crystal present is no more than 10 .mu.m, the average grain size of any precipitate present is no more than 0.1 .mu.m, and the average size of any crystalline grains present is no more than 50 .mu.m.
摘要翻译：具有高强度和伸长率的导线的半导体器件，其基本上由铜合金组成，该铜合金含有0.05-1％的Cr，0.005-0.3％的Zr，0.001-0.05％的Li，0-1％的Ni， 1％Sn，0-1％Ti，0-0.1％Si和0.001-0.3％选自P，Mg，Al，Zn和Mn中的至少一种元素，余量为Cu和不超过0.1％的偶然杂质，百分比在重量的基础上。本发明还提供一种具有高强度和伸长率的导线的半导体器件，其基本上由含有0.05-1％的Cr或0.005-0.3％的Zr或两者的铜合金组成，0.001-0.05％的Li， 1％的Ni，0-1％的Sn，0-1％的Ti，0-0.1％的Si，并且还含有一种或多种选自Fe，Co的0-2％的金属和 Be，选自Mg，Al，Zn，Mn，B，P，Y和稀土元素的金属的0-1％，以及0-2％的选自Nb， V，Ta，Hf，Mo和W，百分数在重量的基础上，余量为铜和附带杂质，并且具有其中存在的任何共晶晶体的平均晶粒尺寸不大于10μm的结构，存在的任何沉淀物的平均晶粒尺寸不大于0.1μm，任何晶粒的平均尺寸不超过50μm。

59. 发明授权

US4869758A Iron/copper/chromium alloy material for high-strength lead frame or pin grid array 失效
标题翻译：铁/铜/铬合金材料，用于高强度引线框架或引脚格栅阵列
公开(公告)号：US4869758A
公开(公告)日：1989-09-26
申请号：US198496
申请日：1988-05-25
申请人： Kunio Watanabe , Satoshi Nishimura , Kunishige Kaneko
发明人： Kunio Watanabe , Satoshi Nishimura , Kunishige Kaneko
IPC分类号： C22C9/00 , C22C38/20 , H01L21/48 , H01L23/495
CPC分类号： C22C38/20 , C22C9/00 , H01L21/4821 , H01L23/49579 , H01L2924/0002
摘要： An iron/copper/chromium alloy material for a high-strength lead frame or pin grid array, which comprises 20 to 90% by weight of Cu and 2.5 to 12% by weight of Cr, with the balance being mainly iron, and which has an average grain size number of at least 10 in each of the iron/chromium phase and the copper phase, is prepared by continuous casting, cold-working, and aging.

60. 发明授权

US4822560A Copper alloy and method of manufacturing the same 失效
标题翻译：铜合金及其制造方法
公开(公告)号：US4822560A
公开(公告)日：1989-04-18
申请号：US916694
申请日：1986-10-08
申请人： Yoshimasa Oyama , Masato Asai , Toru Tanigawa , Shigeo Shinozaki , Shoji Shiga
发明人： Yoshimasa Oyama , Masato Asai , Toru Tanigawa , Shigeo Shinozaki , Shoji Shiga
IPC分类号： C22C9/02 , C22F1/08 , H01L23/495
CPC分类号： H01L23/49579 , C22C9/02 , C22F1/08 , H01L2924/0002
摘要： A copper alloy is disclosed which comprises 0.01 to 1.0 wt. % of Cr, 0.01 to 8 wt. % of Sn, 0.001 to 5 wt. % of at least one of 0.001 to 5 wt. % of Zn, 0.001 to 0.5 wt. % of Mn and 0.001 to 0.2 wt. % of Mg and the remainder of Cu, the content of O.sub.2 therein being not more than 0.005 wt. %. A method of manufacturing therefor is described wherein, after the hot processing or the heat treatment at 800.degree. to 950.degree. C., the alloy is cooled by passage through a region of 800.degree. to 400.degree. C. within 20 minutes, then following cold processing, heating treatment is carried out for at least 1 minute at 400.degree. to 650.degree. C. The alloy with the composition aforementioned is used as an alloy material for electric or electronic instruments.
摘要翻译：公开了一种铜合金，其包含0.01至1.0wt。 Cr％，0.01〜8重量％ Sn的％，0.001〜5重量％ 0.001至5重量％中的至少一个的％％的Zn，0.001〜0.5wt。 Mn的百分数为0.001〜0.2重量％。％的Mg和余量的Cu，其中的O 2含量不超过0.005wt。％。对其制造方法进行说明，其中在800℃〜950℃的热加工或热处理后，在20分钟内通过800〜400℃的区域冷却合金，然后冷却在400〜650℃下进行加工处理至少1分钟。将上述组成的合金用作电气或电子仪器的合金材料。

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