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51. 发明申请

US20110163068A1 Multibeam System 审中-公开
标题翻译：多光束系统
公开(公告)号：US20110163068A1
公开(公告)日：2011-07-07
申请号：US12812221
申请日：2009-01-09
申请人： Mark Utlaut , Noel Smith , Paul P. Tesch , Tom Miller , David H. Narum , David Tuggle , Lawrence Scipioni
发明人： Mark Utlaut , Noel Smith , Paul P. Tesch , Tom Miller , David H. Narum , David Tuggle , Lawrence Scipioni
IPC分类号： C23F1/08 , C23F1/00
CPC分类号： H01L21/0279 , G03F1/84 , H01J37/228 , H01J37/3007 , H01J37/3056 , H01L21/0273 , H01L21/0274 , H01L21/2633
摘要： A multibeam system in which a charged particle beam and one or more additional beams can be directed to the target within a single vacuum chamber. A first beam colunm preferably produces a beam for rapid processing, and a second beam column produces a beam for more precise processing. A third beam column can be used to produce a beam useful for forming an image of the sample while producing little or no change in the sample.
摘要翻译：多光束系统，其中带电粒子束和一个或多个附加光束可以在单个真空室内被引导到目标物。第一光束镜筒优选地产生用于快速处理的光束，并且第二光束柱产生用于更精确处理的光束。可以使用第三光束柱来产生用于形成样品图像的光束，同时产生很少或没有变化的样品。

52. 发明申请

US20110143512A1 METHOD FOR DUAL ENERGY IMPLANTATION FOR ULTRA-SHALLOW JUNCTION FORMATION OF MOS DEVICES 有权
标题翻译：用于双能量植入的方法，用于超微结构形成MOS器件
公开(公告)号：US20110143512A1
公开(公告)日：2011-06-16
申请号：US12830241
申请日：2010-07-02
申请人： HANMING WU , Chia Hao Lee , John Chen
发明人： HANMING WU , Chia Hao Lee , John Chen
IPC分类号： H01L21/336 , H01L21/265 , H01J1/50
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/055 , H01J2237/0825 , H01L21/2236 , H01L21/26513 , H01L29/0847 , H01L29/6659 , H01L29/7833
摘要： A method for forming a lightly doped drain (LDD) region in a semiconductor substrate. The method includes generating an ion beam of a selected species, and accelerating the ion beam, wherein the accelerated ion beam includes a first accelerated portion and a second accelerated portion. The method further includes deflecting the accelerating ion beam, wherein the first and second accelerated portions are concurrently deflected into a first path trajectory having a first deflected angle and second path trajectory having a second deflected angle. In an embodiment, the first and second path trajectories travel in the same direction, which is perpendicular to the surface region of the semiconductor wafer, and the first deflected angle is greater than the second deflected angle. In an embodiment, the selected species may include an n-type ion comprising phosphorous (P), arsenic (As), or antimony (Sb).
摘要翻译：一种在半导体衬底中形成轻掺杂漏极（LDD）区域的方法。该方法包括产生所选物种的离子束并加速离子束，其中加速离子束包括第一加速部分和第二加速部分。该方法还包括偏转加速离子束，其中第一和第二加速部分同时偏转到具有第一偏转角的第一路径轨迹和具有第二偏转角的第二路径轨迹。在一个实施例中，第一和第二路径轨迹在与半导体晶片的表面区域垂直的相同方向上行进，并且第一偏转角度大于第二偏转角度。在一个实施方案中，所选择的物质可以包括包含磷（P），砷（As）或锑（Sb）的n型离子。

53. 发明申请

US20100258738A1 DEVICE FOR DEFLECTING OR GUIDING IN A PARTICLE BEAM 有权
标题翻译：用于在颗粒束中进行偏转或引导的装置
公开(公告)号：US20100258738A1
公开(公告)日：2010-10-14
申请号：US12733931
申请日：2008-09-26
申请人： Dirk Preikszas
发明人： Dirk Preikszas
IPC分类号： H01J3/22 , H01J3/26
CPC分类号： H01J37/3007 , B82Y10/00 , B82Y40/00 , H01J37/02 , H01J37/045 , H01J37/14 , H01J37/147 , H01J37/3174 , H01J2237/0492 , H01J2237/103 , H01J2237/26
摘要： A device for deflecting a particle beam out of a beam axis, or for guiding a particle beam into the beam axis, has a simple design, requires little space, and additionally ensures that no area of an object that is not to be struck is struck by a particle beam. The device may include components in the following sequence along the beam axis: first deflection element, a magnetic apparatus for providing a magnetic field axially to the beam axis, and a second deflection element. A particle beam apparatus may have a device of this type.
摘要翻译：用于将粒子束偏离射束轴线或用于将粒子束引导到射束轴线中的装置具有简单的设计，需要很小的空间，并且另外确保不会撞击不被撞击的物体的区域通过粒子束。装置可以沿着光束轴线包括以下顺序的部件：第一偏转元件，用于向光束轴线轴向提供磁场的磁性装置和第二偏转元件。粒子束装置可以具有这种类型的装置。

54. 发明授权

US07705328B2 Broad ribbon beam ion implanter architecture with high mass-energy capability 有权
标题翻译：具有高质量能量能力的宽带束离子注入架构
公开(公告)号：US07705328B2
公开(公告)日：2010-04-27
申请号：US11932117
申请日：2007-10-31
申请人： Shu Satoh , Manny Sieradzki
发明人： Shu Satoh , Manny Sieradzki
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/045 , H01J2237/057 , H01J2237/153
摘要： A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).
摘要翻译：一种带状离子束系统，包括被配置为沿着第一光束路径产生带状离子束的离子源，其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸（h1）和长尺寸（w1）的质量分析磁体其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束，其中离开质量分析的带状离子束磁体在非分散xz平面中发散并且在xy平面中收敛，质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类，角度校正装置被配置为将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中，并沿着第三层在xy平面中分散带状离子束光束路径，并且其中所述平行带状束具有可变高度（h2）和长尺寸宽度（w2）。

55. 发明申请

US20100019166A1 Method for Controlling Electron Beam in Multi-Microcolumn and Multi-Microcolumn Using The Same 有权
标题翻译：用于控制多微柱和多微柱中的电子束的方法
公开(公告)号：US20100019166A1
公开(公告)日：2010-01-28
申请号：US11571695
申请日：2005-07-05
申请人： Ho Seob Kim , Byeng Jin Kim
发明人： Ho Seob Kim , Byeng Jin Kim
IPC分类号： H01J3/14
CPC分类号： H01J37/263 , B82Y10/00 , B82Y40/00 , H01J3/14 , H01J37/04 , H01J37/3007 , H01J37/302 , H01J37/3174 , H01J2237/1205 , H01J2237/248 , H01J2237/28 , H01J2237/31752
摘要： Provided is a method for controlling electron beams in a multi-microcolumn, in which unit microcolumns having an electron emitter, a lens, and a deflector are arranged in an n×m matrix. A voltage is uniformly or differentially applied to each electron emitter or extractor. The same control voltage or different voltages are applied to a region at coordinates in a control division area of each extractor to deflect the electron beams. Lens layers not corresponding to the extractors are collectively or individually controlled so as to efficiently control the electron beams of the unit microcolumn. Further, a multi-microcolumn using the method is provided.
摘要翻译：提供了一种用于控制多微柱中的电子束的方法，其中具有电子发射器，透镜和偏转器的单元微柱以n×m矩阵排列。电压均匀或差分施加到每个电子发射器或提取器。将相同的控制电压或不同的电压施加到每个提取器的控制分割区域中的坐标处的区域以偏转电子束。不对应于提取器的透镜层被集体地或单独地控制，以便有效地控制单元微柱的电子束。此外，提供了使用该方法的多微柱。

56. 发明申请

US20090180373A1 ELECTRON BEAM APPLYING APPARATUS AND DRAWING APPARATUS 有权
标题翻译：电子束应用设备和绘图设备
公开(公告)号：US20090180373A1
公开(公告)日：2009-07-16
申请号：US12389174
申请日：2009-02-19
申请人： Takeshi Miyazaki , Hideyuki Ohyi , Takashi Obara
发明人： Takeshi Miyazaki , Hideyuki Ohyi , Takashi Obara
IPC分类号： G11B7/00
CPC分类号： H01J37/3007 , G11B7/0045 , G11B7/261 , G11B9/10 , G11B11/002 , H01J2237/3175
摘要： An electron beam applying apparatus includes: a thermal field emission type electron source emitting an electron beam; an electrostatic lens disposed immediately below the electron source and acting as a condensing electrode for condensing the electron beam in a first angular aperture emitted by the electron source in a second angular aperture smaller than the first angular aperture; a condenser lens disposed on a downstream side of the electrostatic lens and condensing the electron beam condensed in the second aperture angel by the electrostatic lens in a crossover point; and an objective lens disposed on a downstream side of the condenser lens and condensing the electron beam condensed in the crossover point by the condenser lens on the surface of the material.
摘要翻译：电子束施加装置包括：发射电子束的热场发射型电子源; 静电透镜，其设置在电子源的正下方，并且用作聚合电极，用于将电子束在由第一角度孔径小于第一角度孔的电子源中发射的第一角孔中聚集; 聚光透镜，设置在所述静电透镜的下游侧，并且以交叉点将由所述静电透镜聚光的所述第二孔径角中的所述电子束聚光; 以及设置在聚光透镜的下游侧的物镜，并且将聚光透镜在交叉点处会聚的电子束会聚在材料的表面上。

57. 发明申请

US20090108198A1 BROAD RIBBON BEAM ION IMPLANTER ARCHITECTURE WITH HIGH MASS-ENERGY CAPABILITY 有权
标题翻译：具有高能量能力的BROAD RIBBON BEAM离子植绒建筑
公开(公告)号：US20090108198A1
公开(公告)日：2009-04-30
申请号：US11932117
申请日：2007-10-31
申请人： Shu Satoh , Manny Sieradzki
发明人： Shu Satoh , Manny Sieradzki
IPC分类号： H01J49/30
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/045 , H01J2237/057 , H01J2237/153
摘要： A ribbon ion beam system, comprising an ion source configured to generate a ribbon ion beam along a first beam path, wherein the ribbon ion beam enters a mass analysis magnet having a height dimension (h1) and a long dimension (w1) that is perpendicular to an xy plane, wherein the mass analysis magnet is configured with its momentum dispersive xy plane to receive the ribbon ion beam and to provide magnetic fields to transmit the ribbon ion beam along a second beam path, wherein the ribbon ion beam exiting the mass analysis magnet is divergent in the non-dispersive xz plane and convergent in the xy plane, a mass selection slit for receiving the divergent ribbon ion beam and selecting desired ion species of the ribbon ion beam exiting the mass analysis magnet, an angle correction device configured to receive the divergent ribbon ion beam exiting the mass selection slit into a parallel ribbon ion beam in the horizontal xz plane and a diverging ribbon ion beam in an xy plane along a third beam path, and wherein the parallel ribbon beam has a variable height (h2) and a long dimension, width (w2).
摘要翻译：一种带状离子束系统，包括被配置为沿着第一光束路径产生带状离子束的离子源，其中所述带状离子束进入具有垂直于所述第一光束路径的高度尺寸（h1）和长尺寸（w1）的质量分析磁体其中所述质量分析磁体被配置有其动量分散xy平面以接收带状离子束并且提供磁场以沿着第二光束路径透射带状离子束，其中离开质量分析的带状离子束磁体在非分散xz平面中发散并且在xy平面中收敛，质量选择狭缝用于接收发散带状离子束并选择离开质量分析磁体的带离子束的期望离子种类，角度校正装置被配置为将离开质量选择狭缝的发散带状离子束接收在水平xz平面中的平行带状离子束中，并沿着第三层在xy平面中分散带状离子束光束路径，并且其中所述平行带状束具有可变高度（h2）和长尺寸宽度（w2）。

58. 发明授权

US07507960B2 Apparatus and method for controlled particle beam manufacturing 有权
标题翻译：受控粒子束制造的装置和方法
公开(公告)号：US07507960B2
公开(公告)日：2009-03-24
申请号：US11893702
申请日：2007-08-17
申请人： Michael John Zani , Mark Joseph Bennahmias , Mark Anthony Mayse , Jeffrey Winfield Scott
发明人： Michael John Zani , Mark Joseph Bennahmias , Mark Anthony Mayse , Jeffrey Winfield Scott
IPC分类号： G21K7/00 , G21K23/00
CPC分类号： H01J37/3056 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3007 , H01J37/304 , H01J37/3172 , H01J37/3174 , H01J37/3177 , H01J2237/0432 , H01J2237/047 , H01J2237/30472 , H01J2237/31713 , H01J2237/31732 , H01J2237/31735 , H01J2237/31737 , H01J2237/3174 , H01J2237/31749 , H01J2237/3175 , H01J2237/31766 , H01L21/265 , H01L21/26513 , H01L21/76267 , H01L21/84 , H01L27/0629 , H01L29/66462 , H01L29/66659 , Y10T428/24802 , Y10T428/24893
摘要： A chamber for exposing a workpiece to charged particles includes a charged particle source for generating a stream of charged particles, a collimator configured to collimate and direct the stream of charged particles from the charged particle source along an axis, a beam digitizer downstream of the collimator configured to create a digital beam including groups of at least one charged particle by adjusting longitudinal spacing between the charged particles along the axis, a deflector downstream of the beam digitizer including a series of deflection stages disposed longitudinally along the axis to deflect the digital beams, and a workpiece stage downstream of the deflector configured to hold the workpiece.
摘要翻译：用于将工件暴露于带电粒子的室包括用于产生带电粒子流的带电粒子源，准直器，被配置为沿着轴准直和引导带电粒子流从带电粒子源流出，准直器下游的光束数字化器被配置为通过调整沿着轴的带电粒子之间的纵向间隔来创建包括至少一个带电粒子的组的数字光束，所述光束数字转换器的下游的偏转器包括沿轴线纵向设置以偏转数字光束的一系列偏转级，以及构造成保持工件的偏转器下游的工件台。

59. 发明申请

US20080258073A1 Method and apparatus for simultaneously depositing and observing materials on a target 审中-公开
标题翻译：同时在目标上沉积和观察材料的方法和装置
公开(公告)号：US20080258073A1
公开(公告)日：2008-10-23
申请号：US12154956
申请日：2008-05-27
申请人： Michael Mauck
发明人： Michael Mauck
IPC分类号： H01J3/26
CPC分类号： G01N23/04 , G21K1/093 , H01J37/147 , H01J37/3005 , H01J37/3007 , Y10S977/869 , Y10S977/881 , Y10S977/887 , Y10S977/89
摘要： A system for joining at least two beams of charged particles that includes directing a first beam along a first axis into a field. A second beam is directed along a second axis into the field. The first and second beams are turned, by interaction between the field and the first and second beams, into a third beam directed along a third axis.
摘要翻译：一种用于连接至少两束带电粒子的系统，包括将第一光束沿着第一轴线引导到场中。沿着第二轴将第二光束引导到场中。第一和第二光束通过场和第一和第二光束之间的相互作用转动成沿着第三轴指向的第三光束。

60. 发明申请

US20080156998A1 Focused Ion Beam Apparatus 审中-公开
标题翻译：聚焦离子束装置
公开(公告)号：US20080156998A1
公开(公告)日：2008-07-03
申请号：US11961967
申请日：2007-12-20
申请人： Yasuhiko Sugiyama
发明人： Yasuhiko Sugiyama
IPC分类号： H01J3/14
CPC分类号： H01J37/08 , H01J37/3007 , H01J37/3056 , H01J2237/0817 , H01J2237/31742 , H01J2237/31749
摘要： A focused ion beam apparatus including a plasma type gas ion source for generating an ion beam, and an ion optical system for gathering the ion beam generated from the plasma type gas ion source onto a sample. The ion optical system is constructed by a constitution having 2 pieces of basic electrostatic lenses and an ion optical system magnification of the 2 pieces of basic electrostatic lenses is set to be equal to or smaller than 1/300.
摘要翻译：包括用于产生离子束的等离子体型气体离子源的聚焦离子束装置和用于将从等离子体型气体离子源产生的离子束聚集到样品上的离子光学系统。离子光学系统由具有2个基本静电透镜的构造构成，并且2个基本静电透镜的离子光学系统放大率设定为等于或小于1/300。

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