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51. 发明申请

US20150134897A1 METHOD AND APPARATUS FOR REFRESHING A MEMORY CELL 有权
标题翻译：用于刷新存储器单元的方法和装置
公开(公告)号：US20150134897A1
公开(公告)日：2015-05-14
申请号：US14244173
申请日：2014-04-03
申请人： QUALCOMM Incorporated
发明人： Deepti Vijayalakshmi Sriramagiri , Jung Pill Kim , Jungwon Suh , Xiangyu Dong
IPC分类号： G11C11/406
CPC分类号： G11C11/40618 , G11C11/406 , G11C11/40603 , G11C11/40615 , G11C11/40626 , G11C2211/406
摘要： A method includes sending a first signal from a memory device to a memory controller. The first signal indicates to the memory controller that particular memory cells of the memory device are to be refreshed by the memory device.
摘要翻译：一种方法包括将第一信号从存储器件发送到存储器控制器。第一信号向存储器控制器指示存储器件将刷新存储器件的特定存储器单元。

52. 发明申请

US20150103609A1 SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件
公开(公告)号：US20150103609A1
公开(公告)日：2015-04-16
申请号：US14176599
申请日：2014-02-10
申请人： SK hynix Inc.
发明人： Choung Ki SONG , Yo Sep LEE , Chan Gi GIL , Chang Hyun KIM
IPC分类号： G11C11/406
CPC分类号： G11C11/40615 , G11C11/406 , G11C11/40626
摘要： A semiconductor device including a control signal generator and an internal refresh signal generator is provided. The control signal generator generates first and second control signals, one of which is selectively enabled in response to temperature code signals and mode set signals after a pulse of an internal refresh signal is outputted by the internal refresh signal generator. The temperature code signals are obtained from temperature signals. The internal refresh signal generator outputs a refresh command signal as the internal refresh signal when the first control signal is enabled. Further, the internal refresh signal generator outputs the refresh command signal as the internal refresh signal at a moment that the refresh command signal is inputted thereto by a predetermined number of times when the second control signal is enabled.
摘要翻译：提供了包括控制信号发生器和内部刷新信号发生器的半导体器件。控制信号发生器产生第一和第二控制信号，其中一个控制信号在内部刷新信号发生器输出内部刷新信号的脉冲之后响应于温度代码信号和模式设置信号选择性地使能。温度信号由温度信号获得。当第一控制信号被使能时，内部刷新信号发生器输出刷新命令信号作为内部刷新信号。此外，当第二控制信号被使能时，内部刷新信号发生器输出刷新命令信号作为内部刷新信号，在刷新命令信号输入时刻预定次数。

53. 发明授权

US09007808B1 Safeguarding data through an SMT process 有权
标题翻译：通过SMT流程保护数据
公开(公告)号：US09007808B1
公开(公告)日：2015-04-14
申请号：US13628385
申请日：2012-09-27
申请人： Adesto Technologies Corporation
发明人： John Dinh , Derric Lewis , Venkatesh P. Gopinath , Deepak Kamalanathan , Shane C. Hollmer , Juan Pablo Saenz Echeverry
IPC分类号： G11C11/00 , G11C13/00 , G11C11/406 , G11C13/02
CPC分类号： G11C13/0011 , G11C11/406 , G11C11/40603 , G11C11/40626 , G11C13/0009 , G11C13/0033 , G11C13/004 , G11C13/0069 , G11C13/02 , G11C2013/0083
摘要： Structures and methods for recovering data in a semiconductor memory device are disclosed herein. In one embodiment, a method of recovering data in a semiconductor memory device, can include: (i) pre-conditioning a first memory cell on the semiconductor memory device by using a formation voltage to program a first data state in the first memory cell; (ii) storing a second data state in a second memory cell on the semiconductor memory device by maintaining the second memory cell in a virgin state; (iii) mounting the semiconductor memory device on a printed-circuit board (PCB) by using a high temperature process that increases a resistance of the first memory cell; and (iv) performing a recovery of the first data state by reducing the resistance of the first memory cell.
摘要翻译：本文公开了用于在半导体存储器件中恢复数据的结构和方法。在一个实施例中，一种在半导体存储器件中恢复数据的方法可以包括：（i）通过使用地层电压对第一存储器单元中的第一数据状态进行编程来预调节半导体存储器件上的第一存储单元; （ii）通过将第二存储单元维持在处女状态，将第二数据状态存储在半导体存储器件上的第二存储单元中; （iii）通过使用增加第一存储单元的电阻的高温处理将半导体存储器件安装在印刷电路板（PCB）上; 和（iv）通过减小第一存储单元的电阻来执行第一数据状态的恢复。

54. 发明授权

US08982653B2 Method and device for temperature-based data refresh in non-volatile memories 有权
标题翻译：用于在非易失性存储器中进行基于温度的数据刷新的方法和装置
公开(公告)号：US08982653B2
公开(公告)日：2015-03-17
申请号：US13128812
申请日：2008-11-11
申请人： Janne Tapani Nurminen , Kimmo Juhani Mylly , Matti Kalevi Floman
发明人： Janne Tapani Nurminen , Kimmo Juhani Mylly , Matti Kalevi Floman
IPC分类号： G11C7/04 , G11C13/00 , G11C11/406 , G11C16/34
CPC分类号： G11C16/3418 , G11C7/04 , G11C11/406 , G11C11/40626 , G11C13/0033 , G11C13/0035 , G11C13/0069 , G11C16/14 , G11C16/26 , G11C16/34 , G11C16/3431 , G11C16/349
摘要： The invention relates to a method comprising measuring the temperature of at least one location of a non-volatile memory; determining if said temperature measurement indicates that the data retention time of data stored at said at least one location is reduced below a threshold; and re-writing said data to said non-volatile memory in response to a positive determination.
摘要翻译：本发明涉及一种方法，包括测量非易失性存储器的至少一个位置的温度; 确定所述温度测量是否指示存储在所述至少一个位置处的数据的数据保持时间被降低到阈值以下; 以及响应于肯定确定将所述数据重新写入所述非易失性存储器。

55. 发明授权

US08981857B2 Temperature dependent timer circuit 有权
标题翻译：温度依赖定时器电路
公开(公告)号：US08981857B2
公开(公告)日：2015-03-17
申请号：US13678117
申请日：2012-11-15
申请人： Dale J. McQuirk , Michael T. Berens , Miten H. Nagda
发明人： Dale J. McQuirk , Michael T. Berens , Miten H. Nagda
IPC分类号： H03K3/03 , H03K3/023 , G06F1/26 , G11C5/14 , G11C11/406 , H03K3/0231 , G06F1/08 , G06F1/32 , G04G3/04 , G04F3/06
CPC分类号： H03K3/023 , G04F3/06 , G04G3/04 , G06F1/08 , G06F1/26 , G06F1/3296 , G11C5/147 , G11C11/40626 , G11C2211/4065 , H03K3/0231 , Y02D10/172
摘要： A timer to provide pulses at a comparator output wherein a frequency of the pulses is dependent on temperature, wherein providing each pulse includes biasing a first input of the comparator at a voltage and operating a transistor in a subthreshold region of operation to change the voltage of the first input of a comparator at a rate dependent upon temperature. The output of the comparator changes state when the voltage of the first input crosses a voltage of a second input of the comparator.
摘要翻译：一种在比较器输出端提供脉冲的定时器，其中所述脉冲的频率取决于温度，其中提供每个脉冲包括以一个电压偏置所述比较器的第一输入并操作亚阈值操作区域中的晶体管，比较器的第一个输入，取决于温度。当第一输入的电压与比较器的第二输入的电压相交时，比较器的输出改变状态。

56. 发明授权

US08971132B2 Semiconductor device, method for controlling the same, and semiconductor system 有权
标题翻译：半导体装置及其控制方法以及半导体系统
公开(公告)号：US08971132B2
公开(公告)日：2015-03-03
申请号：US13886323
申请日：2013-05-03
申请人： PS4 Luxco S.a.r.l.
发明人： Kiyohiro Furutani , Seiji Narui
IPC分类号： G11C7/10 , G11C7/00 , G11C7/04 , G11C8/00 , G11C11/406 , G11C8/06 , G11C8/12 , G11C8/18
CPC分类号： G11C11/40626 , G11C8/06 , G11C8/12 , G11C8/18 , G11C11/406 , G11C11/40615 , G11C2211/4061 , G11C2211/4067
摘要： The semiconductor device includes a temperature sensor controlled so that temperature measurement is made once at each of a plurality of different reference temperatures at an interval of a preset number of times of refresh operations and a plurality of latch circuits holding the results of temperature measurement. A refresh period is set from outputs of the latch circuits inclusive of the result of temperature measurement carried out last time for each of a plurality of different reference temperatures. After start of measurement, temperature measurements are repeated every wait time corresponding to circulation of the refresh operations. The refresh period is set such that the high-temperature side results of temperature measurement are prioritized.
摘要翻译：该半导体装置包括温度传感器，该温度传感器被控制成使得以预定次数的刷新操作的间隔和保持温度测量结果的多个锁存电路在多个不同参考温度中的每一个进行一次温度测量。包括针对多个不同参考温度中的每一个的上次执行的温度测量结果的锁存电路的输出设置刷新周期。在测量开始之后，对应于刷新操作的循环的每个等待时间重复温度测量。刷新周期被设定为使得温度测量的高温侧结果被优先考虑。

57. 发明申请

US20150003177A1 SEMICONDUCTOR DEVICE SUPPRESSING BTI DETERIORATION 有权
标题翻译：抑制BTI检测的半导体器件
公开(公告)号：US20150003177A1
公开(公告)日：2015-01-01
申请号：US14315951
申请日：2014-06-26
申请人： Micron Technology, Inc.
发明人： Keisuke Fujishiro
IPC分类号： G11C11/4078 , G11C11/417 , G11C11/4076 , H03K3/037 , H03K17/22
CPC分类号： G11C11/4076 , G11C11/406 , G11C11/40626 , G11C11/4091 , G11C11/4093 , G11C11/4094 , G11C11/4096
摘要： Disclosed herein is a device includes a command generation circuit that activates first and second command signals, an internal circuit that includes a plurality of transistors that are brought into a first operation state when at least one of the first and second command signals is activated, and an output gate circuit that receives a first signal output from the internal circuit, the output gate circuit being configured to pass the first signal when the second command signal is deactivated and to block the first signal when the second command signal is activated.
摘要翻译：本文公开了一种装置，包括：激活第一和第二命令信号的命令产生电路;内部电路，包括当第一和第二命令信号中的至少一个被激活时处于第一操作状态的多个晶体管;以及输出门电路，其接收从所述内部电路输出的第一信号，所述输出门电路被配置为当所述第二命令信号被去激活时通过所述第一信号，并且当所述第二命令信号被激活时阻止所述第一信号。

58. 发明申请

US20140304444A1 SYSTEMS AND METHODS FOR MEMORY SYSTEM MANAGEMENT BASED ON INFORMATION OF A MEMORY SYSTEM 审中-公开
标题翻译：基于存储器系统信息的存储器系统管理系统和方法
公开(公告)号：US20140304444A1
公开(公告)日：2014-10-09
申请号：US14247833
申请日：2014-04-08
申请人： Micron Technology, Inc.
发明人： Robert Walker , David A. Roberts
IPC分类号： G06F12/02 , G06F13/24 , G06F12/12
CPC分类号： G06F12/0223 , G06F1/206 , G06F1/3275 , G06F3/0604 , G06F3/0631 , G06F3/0673 , G06F12/023 , G06F12/122 , G06F13/1668 , G06F13/24 , G06F13/4282 , G06F2212/1016 , G11C7/04 , G11C11/40626 , Y02D10/13 , Y02D10/14 , Y02D10/151 , Y02D10/16
摘要： Methods of mapping memory regions to processes based on thermal data of memory regions are described. In some embodiments, a memory controller may receive a memory allocation request. The memory allocation request may include a logical memory address. The method may further include mapping the logical memory address to an address in a memory region of the memory system based on thermal data for memory regions of the memory system. Additional methods and systems are also described.
摘要翻译：描述了将存储区域映射到基于存储器区域的热数据的处理的方法。在一些实施例中，存储器控制器可以接收存储器分配请求。存储器分配请求可以包括逻辑存储器地址。该方法还可以包括基于存储器系统的存储器区域的热数据将逻辑存储器地址映射到存储器系统的存储器区域中的地址。还描述了附加的方法和系统。

59. 发明授权

US08787104B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08787104B2
公开(公告)日：2014-07-22
申请号：US13243245
申请日：2011-09-23
申请人： Keun Kook Kim
发明人： Keun Kook Kim
IPC分类号： G11C7/00
CPC分类号： G11C11/40626
摘要： A semiconductor memory device includes a temperature sensor configured to generate a low-temperature signal which is enabled at below first set temperature and a high-temperature signal which is enabled at above second set temperature; a start signal generator configured to receive a refresh command and generate a start signal according to the low-temperature signal; and an address counter configured to count refresh addresses in response to the start signal.
摘要翻译：一种半导体存储器件，包括：温度传感器，被配置为产生在低于第一设定温度下使能的低温信号;以及高于上述第二设定温度的高温信号; 启动信号发生器，被配置为接收刷新命令并根据低温信号产生起始信号; 以及地址计数器，配置为响应于开始信号对刷新地址进行计数。

60. 发明申请

US20130215700A1 SEMICONDUCTOR MEMORY DEVICE CHANGING REFRESH INTERVAL DEPENDING ON TEMPERATURE 有权
公开(公告)号：US20130215700A1
公开(公告)日：2013-08-22
申请号：US13848514
申请日：2013-03-21
申请人： FUJITSU SEMICONDUCTOR LIMITED
发明人： Akinobu Shirota , Kuninori Kawabata
IPC分类号： G11C11/406
CPC分类号： G11C11/40626 , G11C7/04 , G11C11/401 , G11C11/406 , G11C29/02 , G11C29/028 , G11C29/50016 , G11C2029/0409 , G11C2029/5002 , G11C2211/4061
摘要： A semiconductor memory device includes a memory core circuit having memory cells for storing data, a circuit configured to refresh the memory core circuit at a refresh interval, a temperature detecting unit configured to detect temperature, and a control circuit configured to shorten the refresh interval immediately in response to detection of a predetermined temperature rise by the temperature detecting unit and to elongate the refresh interval after refreshing every one of the memory cells at least once in response to detection of a temperature drop by the temperature detecting unit.

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