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    • 52. 发明授权
    • Electric field ferromagnetic resonance excitation method and magnetic function element employing same
    • 电场铁磁共振激励法和磁功能元件采用相同
    • US09460769B2
    • 2016-10-04
    • US14240158
    • 2012-06-18
    • Takayuki NozakiYoshishige Suzuki
    • Takayuki NozakiYoshishige Suzuki
    • G11B5/147G11C11/16H01L29/66H01L43/08H03B15/00H01F41/30B82Y40/00H01F10/32
    • G11C11/1675B82Y40/00G11B5/147G11C11/2275H01F10/3254H01F10/3286H01F10/329H01F41/303H01L29/66984H01L43/08H03B15/006
    • To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.
    • 为了实现使用电场作为驱动功率的低功耗的电场驱动型铁磁共振激励方法,并且使用该方法提供自旋波信号生成元件和自旋电流信号生成元件,使用这些元件的逻辑元件, 以及诸如高频检测元件的磁功能元件和使用该方法的磁记录装置。 将具有特定磁场施加角和磁场强度的磁场施加到其中极薄铁磁层足够薄以致不会发生通过传导电子的电场屏蔽效应并且磁各向异性控制层直接堆叠的层叠结构 并且绝缘阻挡层和电极层依次布置在超薄铁磁层一侧。 然后,在磁各向异性控制层和电极层之间施加具有磁共振频率的高频分量的电场,从而有效地激励超薄铁磁层中的铁磁共振。
    • 58. 发明授权
    • MgO based perpendicular spin polarizer in microwave assisted magnetic recording (MAMR) applications
    • 基于MgO的垂直自旋偏振器在微波辅助磁记录(MAMR)应用中
    • US09230571B1
    • 2016-01-05
    • US14468399
    • 2014-08-26
    • Headway Technologies, Inc.
    • Wenyu ChenYan Wu
    • G11B5/127G11B5/31G11B5/39G11B5/00
    • G11B5/315G11B5/1278G11B5/147G11B5/314G11B5/3146G11B5/3909G11B2005/0024
    • A design for a microwave assisted magnetic recording device is disclosed wherein a spin torque oscillator (STO) between a main pole and write shield has a spin polarization (SP) layer less than 30 Angstroms thick and perpendicular magnetic anisotropy (PMA) induced by an interface with one or two metal oxide layers. Back scattered spin polarized current from an oscillation layer is used to stabilize SP layer magnetization. One or both of the metal oxide layers may be replaced by a confining current pathway (CCP) structure. In one embodiment, the SP layer is omitted and spin polarized current is generated by a main pole/metal oxide interface. A direct current or pulsed current bias is applied across the STO. Rf current may also be injected into the STO to reduce critical current density. A write gap of 25 nm or less is achieved while maintaining good STO performance.
    • 公开了一种用于微波辅助磁记录装置的设计,其中在主极和写屏蔽之间的自旋极化振荡器(STO)具有小于30埃的自旋极化(SP)层和由界面引起的垂直磁各向异性(PMA) 具有一个或两个金属氧化物层。 使用来自振荡层的背散射自旋极化电流来稳定SP层的磁化强度。 金属氧化物层中的一个或两个可以被限制电流通路(CCP)结构代替。 在一个实施例中,SP层被省略,并且通过主极/金属氧化物界面产生自旋极化电流。 在STO上施加直流或脉冲电流偏置。 也可以将Rf电流注入STO以降低临界电流密度。 在保持良好的STO性能的同时实现25nm或更小的写入间隙。