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51. 发明申请

US20060166474A1 Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow 有权
标题翻译：通过电化学处理利用栅极 - 电介质电流流动的栅堆叠工程
公开(公告)号：US20060166474A1
公开(公告)日：2006-07-27
申请号：US11050790
申请日：2005-01-27
申请人： Philippe Vereecken , Veeraraghavan Basker , Cyril Cabral , Emanuel Cooper , Hariklia Deligianni , Martin Frank , Rajarao Jammy , Vamsi Paruchuri , Katherine Saenger , Xiaoyan Shao
发明人： Philippe Vereecken , Veeraraghavan Basker , Cyril Cabral , Emanuel Cooper , Hariklia Deligianni , Martin Frank , Rajarao Jammy , Vamsi Paruchuri , Katherine Saenger , Xiaoyan Shao
IPC分类号： H01L21/20
CPC分类号： H01L21/2885 , C25D3/50 , C25D5/02 , C25D5/024 , C25D5/54 , C25D7/123 , C25D9/04 , C25F3/14 , H01L21/28079 , H01L21/28114 , H01L21/76885 , H01L29/513 , H01L29/517 , H01L29/78648
摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.
摘要翻译：提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或熔化。还提供了利用电介质电流流动的电介质电化学修饰方法。

52. 发明授权

US07078340B2 Metal deposit process 失效
标题翻译：金属沉积工艺
公开(公告)号：US07078340B2
公开(公告)日：2006-07-18
申请号：US09774303
申请日：2001-01-29
申请人： Gary W. Ferrell
发明人： Gary W. Ferrell
IPC分类号： H01L21/44
CPC分类号： H01L21/2885 , C23C18/1653 , C23C18/1658 , C23C18/1844 , C23C18/40 , C25D5/54 , C25D7/123 , H01L21/288
摘要： Method and system for controllable deposit of copper onto an exposed surface of a workpiece, such as a semiconductor surface. A seed thickness of copper is optionally deposited onto the exposed surface, preferably using oxygen-free liquid ammonia to enhance this deposition. The workpiece exposed surface is then immersed in an electroplating solution, including copper and liquid ammonia at a suitable pressure and temperature, and copper is caused to plate onto the exposed surface at a controllable rate. When the copper deposited on the exposed surface reaches a selected total thickness, electroplating is discontinued, the electroplating solution is removed, and the gaseous and liquid ammonia are recovered and recycled for re-use.
摘要翻译：铜可控制地沉积到诸如半导体表面的工件的暴露表面上的方法和系统。任选地将铜的种子厚度沉积到暴露的表面上，优选使用无氧液氨来增强该沉积。然后将工件暴露表面在合适的压力和温度下浸入包括铜和液氨的电镀溶液中，并以可控的速率将铜板印刷在暴露的表面上。当沉积在暴露表面上的铜达到所选择的总厚度时，停止电镀，除去电镀溶液，回收气态和液态氨并重新利用。

53. 发明申请

US20060084264A1 Method for applying metal features onto metallized layers using electrochemical deposition and alloy treatment 审中-公开
标题翻译：使用电化学沉积和合金处理将金属特征应用于金属化层的方法
公开(公告)号：US20060084264A1
公开(公告)日：2006-04-20
申请号：US11292380
申请日：2005-11-23
申请人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
发明人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C18/1605 , C25D3/38 , C25D5/18 , C25D5/34 , C25D5/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/321 , H01L21/32134 , H01L21/76846 , H01L21/76861 , H01L21/76864 , H01L21/76873 , H01L21/76885 , H01L2221/1089
摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
摘要翻译：本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。根据本发明的用于促进阻挡层和金属化特征之间的粘附的合适方法包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

54. 发明申请

US20060079084A1 Method for applying metal features onto metallized layers using electrochemical deposition and electrolytic treatment 审中-公开
标题翻译：使用电化学沉积和电解处理将金属特征施加到金属化层上的方法
公开(公告)号：US20060079084A1
公开(公告)日：2006-04-13
申请号：US11286007
申请日：2005-11-23
申请人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
发明人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
IPC分类号： C25D5/34 , H01L21/44
CPC分类号： H01L21/76843 , C23C18/1605 , C25D3/38 , C25D5/18 , C25D5/34 , C25D5/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/321 , H01L21/32134 , H01L21/76846 , H01L21/76861 , H01L21/76864 , H01L21/76873 , H01L21/76885 , H01L2221/1089
摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
摘要翻译：本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

55. 发明申请

US20060079083A1 Method for applying metal features onto metallized layers using electrochemical deposition using acid treatment 审中-公开
标题翻译：使用酸处理使用电化学沉积将金属特征施加到金属化层上的方法
公开(公告)号：US20060079083A1
公开(公告)日：2006-04-13
申请号：US11285993
申请日：2005-11-23
申请人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
发明人： Rajesh Baskaran , Bioh Kim , Linlin Chen , Lyndon Graham
IPC分类号： C25D5/34 , H01L21/44
CPC分类号： H01L21/76843 , C23C18/1605 , C25D3/38 , C25D5/18 , C25D5/34 , C25D5/38 , C25D5/54 , C25D7/123 , H01L21/2885 , H01L21/321 , H01L21/32134 , H01L21/76846 , H01L21/76861 , H01L21/76864 , H01L21/76873 , H01L21/76885 , H01L2221/1089
摘要： The present invention is directed to a process for producing structures containing metallized features for use in microelectronic workpieces. The process treats a barrier layer to promote the adhesion between the barrier layer and the metallized feature. Suitable means for promoting adhesion between barrier layers and metallized features according to the invention include an acid treatment of the barrier layer, an electrolytic treatment of the barrier layer, or deposition of a bonding layer between the barrier layer and metallized feature. The present invention thus modifies an exterior surface of a barrier layer making it more suitable for electrodeposition of metal on a barrier, thus eliminating the need for a PVD or CVD seed layer deposition process.
摘要翻译：本发明涉及一种用于生产用于微电子工件的包含金属化特征的结构的方法。该方法处理阻挡层以促进阻挡层和金属化特征之间的粘附。根据本发明的用于促进阻挡层和金属化特征之间的粘合的合适方式包括阻挡层的酸处理，阻挡层的电解处理或者阻挡层和金属化特征之间的结合层的沉积。因此，本发明改变了阻挡层的外表面，使其更适合于在屏障上电沉积金属，因此不需要PVD或CVD种子层沉积工艺。

56. 发明申请

US20060008627A1 Laser enhanced plating 有权
标题翻译：激光增强电镀
公开(公告)号：US20060008627A1
公开(公告)日：2006-01-12
申请号：US10888450
申请日：2004-07-09
申请人： Peter Nyholm , Curt Nelson , Niranjan Thirukkovalur , Paul McClelland
发明人： Peter Nyholm , Curt Nelson , Niranjan Thirukkovalur , Paul McClelland
IPC分类号： B32B15/00 , B21D39/00
CPC分类号： C23C18/22 , C23C18/1605 , C23C18/1608 , C23C18/1612 , C23C18/204 , C23C18/208 , C23C18/285 , C23C18/30 , C25D5/022 , C25D5/34 , C25D5/54 , H05K3/0032 , H05K3/184 , H05K3/185 , H05K3/381 , H05K2203/0577 , H05K2203/1173 , H05K2203/1415 , Y10S428/901 , Y10T428/12451 , Y10T428/12535 , Y10T428/24917 , Y10T428/2804
摘要： A method of plating a substrate including coating a substrate surface, laser-treating a region of the coated surface, and plating the region.
摘要翻译：一种电镀基板的方法，包括涂覆基板表面，激光处理涂覆表面的区域，以及电镀该区域。

57. 发明授权

US06984446B2 Process for producing a metal layer on a substrate body, and substrate body having a metal layer 失效
标题翻译：在基体上制造金属层的方法，以及具有金属层的基体
公开(公告)号：US06984446B2
公开(公告)日：2006-01-10
申请号：US10916321
申请日：2004-08-11
申请人： Harald Gundlach , Andreas Muller-Hipper , Ewald Simmerlein-Erlbacher
发明人： Harald Gundlach , Andreas Muller-Hipper , Ewald Simmerlein-Erlbacher
IPC分类号： B32B31/30 , B32B33/00 , B29C71/00
CPC分类号： H05K3/246 , C23C2/02 , C23C18/1817 , C23C18/1841 , C23C18/1865 , C23C18/1889 , C23C18/2033 , C23C18/208 , C23C18/31 , C25D5/54 , C25D5/56 , H05K3/102 , H05K3/386 , Y10T428/24355 , Y10T428/24893 , Y10T428/24917 , Y10T428/25
摘要： Process for producing a metal layer on a substrate body. The process includes applying conductive particles to a surface of the substrate body, so that the conductive particles are fixed to the substrate body, and metallizing the substrate body together with the particles chemically and/or by electrodeposition in a metallization bath so as to form the metal layer.
摘要翻译：在基体上制造金属层的方法。该方法包括将导电颗粒施加到衬底主体的表面上，使得导电颗粒固定到衬底主体，并且通过化学和/或电沉积在金属化浴中将衬底主体与颗粒一起金属化以形成金属层。

58. 发明申请

US20050218000A1 Conditioning of contact leads for metal plating systems 审中-公开
标题翻译：金属电镀系统接触导线的调节
公开(公告)号：US20050218000A1
公开(公告)日：2005-10-06
申请号：US11100344
申请日：2005-04-06
申请人： Hooman Hafezi , Joseph Yahalom , Roman Mostovoy , Bo Zheng , Aron Rosenfeld , You Wang , Nicolay Kovarsky
发明人： Hooman Hafezi , Joseph Yahalom , Roman Mostovoy , Bo Zheng , Aron Rosenfeld , You Wang , Nicolay Kovarsky
IPC分类号： C25D5/54 , C25D21/12
CPC分类号： C25D21/12 , C25D5/54
摘要： Embodiments of the invention provide a method for conditioning contacts of an electrochemical metal plating system. The method includes deplating the contacts by supplying a reversed biased energy and monitoring electrical measurements of the plating system in real-time such that the endpoint of a deplating process can be determined. In different embodiments, the method includes the use of a constant current or voltage, variable current or voltage, or combinations thereof for conditioning the contacts.
摘要翻译：本发明的实施例提供一种用于调节电化学金属电镀系统的触点的方法。该方法包括通过提供反向偏置的能量并实时监测电镀系统的电测量来使触点脱锌，从而可以确定脱镀工艺的端点。在不同的实施例中，该方法包括使用恒定电流或电压，可变电流或电压或其组合来调节触点。

59. 发明申请

US20050039949A1 Methods for fabricating current-carrying structures using voltage switchable dielectric materials 失效
标题翻译：使用可开关电介质材料制造载流结构的方法
公开(公告)号：US20050039949A1
公开(公告)日：2005-02-24
申请号：US10941226
申请日：2004-09-14
申请人： Lex Kosowsky
发明人： Lex Kosowsky
IPC分类号： C25D5/54 , H05K1/02 , H05K1/03 , H05K1/16 , H05K3/18 , H05K3/42 , C25D5/48 , H01L21/20 , H01L21/3205 , H01R12/04 , H05K1/11
CPC分类号： H05K3/188 , C25D5/54 , H05K1/0254 , H05K1/0373 , H05K1/167 , H05K3/423 , H05K3/426 , H05K2201/0215 , H05K2201/0738 , H05K2203/105
摘要： A method is provided for fabricating current-carrying formation on substrates. The method includes providing a substrate including a layer of a voltage switchable dielectric material, forming a mask over the layer of the voltage switchable dielectric material, and forming an electrically conductive layer. The mask includes gaps and the electrically conductive layer is formed in the gaps. The voltage switchable dielectric material has a characteristic voltage and the electrically conductive layer is formed by applying a voltage in excess of the characteristic voltage to the substrate and depositing the electrically conductive material through an electrochemical process such as electroplating.
摘要翻译：提供了一种用于在衬底上制造载流形成的方法。该方法包括提供包括可切换电介质材料层的衬底，在电压可切换电介质材料的层上形成掩模，以及形成导电层。掩模包括间隙，并且导电层形成在间隙中。电压可切换介电材料具有特征电压，并且通过向基板施加超过特征电压的电压并且通过诸如电镀的电化学过程沉积导电材料来形成导电层。

60. 发明授权

US06737104B2 Manufacturing method of anti-corrosive multi-layered structure material 失效
标题翻译：防腐多层结构材料的制造方法
公开(公告)号：US06737104B2
公开(公告)日：2004-05-18
申请号：US10230177
申请日：2002-08-29
申请人： Yukihiro Suzuki , Keiji Hashimoto , Yoshinari Minamihama
发明人： Yukihiro Suzuki , Keiji Hashimoto , Yoshinari Minamihama
IPC分类号： B05D136
CPC分类号： H01M8/0215 , C23C18/1605 , C23C18/1644 , C23C18/1651 , C23C18/32 , C23C18/54 , C25D5/54 , H01M8/0206 , H01M8/0228 , Y02P70/56
摘要： A manufacturing method of an anti-corrosive multi-layered structure material having an anti-corrosive non-metallic surface layer formed on a metallic substrate layer, wherein non-electrolytic plating of an anti-corrosive metal different in ionization property from the surface metal of the metallic substrate layer is carried out on the surface of the non-metallic surface layer so that the anti-corrosive metal is substituted for the surface metal of the metallic substrate layer through fine pores of the non-metallic surface layer and precipitated only in the fine pores of the non-metallic surface layer without causing useless precipitation of the anti-corrosive metal on the surface of the non-metallic surface layer.
摘要翻译：一种防腐蚀多层结构材料的制造方法，其具有在金属基材层上形成的具有防腐蚀性的非金属表面层，其中，与所述金属基材层的表面金属的电离性不同的防腐蚀金属的非电解电镀在非金属表面层的表面上进行金属基材层，使得金属基材层的表面金属通过非金属表面层的细孔被代替金属基材层，仅在非金属表面层的细孔，而不会在非金属表面层的表面上引起防腐蚀金属的无用沉淀。

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