会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 58. 发明申请
    • Method and compositions for direct copper plating and filing to form interconnects in the fabrication of semiconductor devices
    • 用于在半导体器件的制造中直接镀铜和填充以形成互连的方法和组合物
    • US20070272560A1
    • 2007-11-29
    • US11708293
    • 2007-02-20
    • Jose GonzalezHerve Monchoix
    • Jose GonzalezHerve Monchoix
    • C25D3/38H01L21/44
    • C25D3/38C25D5/18C25D5/54H01L21/2885H01L21/76877
    • The object of the present invention is a method and compositions for direct copper plating and filling to form interconnects in the fabrication of semiconductor devices. According to the invention, this method comprises providing an electrolytic copper bath containing, in solution in a solvent, a source of copper ions with a concentration of between 45 and 200 mM, preferably of between 45 and 100 mM and at least one copper complexing agent which is an aliphatic polyamine having 2 to 4 amine functions with a concentration of between 30 and 200 mM, preferably of between 60 and 200 mM; the copper/complexing agent(s) molar ratio being of between 0.2 and 2, preferably between 0.3 and 1.5; bringing said copper diffusion barrier layer of said substrate into contact with said electrolytic copper bath, applying an electrical bias to the substrate for a duration adjusted according to the thickness of copper to be electroplated, removing the substrate from said electrolytic copper bath.
    • 本发明的目的是在半导体器件的制造中直接镀铜和填充以形成互连的方法和组合物。 根据本发明,该方法包括提供一种电解铜浴,其在溶剂中含有浓度为45-200mM,优选45-100mM的铜离子源和至少一种铜络合剂 其是具有2至4个胺官能团的脂族多胺,其浓度为30至200mM,优选为60至200mM; 铜/络合剂的摩尔比为0.2至2,优选0.3至1.5; 使所述衬底的所述铜扩散阻挡层与所述电解铜浴接触,向所述衬底施加电偏压持续时间,以根据要电镀的铜的厚度调节,从所述电解铜浴移除衬底。