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51. 发明授权

US08884476B2 Hybrid dielectric film for high temperature application 有权
标题翻译：用于高温应用的混合电介质膜
公开(公告)号：US08884476B2
公开(公告)日：2014-11-11
申请号：US13241686
申请日：2011-09-23
申请人： Weijun Yin , Ri-an Zhao , Min Yan
发明人： Weijun Yin , Ri-an Zhao , Min Yan
IPC分类号： H02K3/30 , B32B27/28 , H01B3/30 , H01B7/29 , C23C14/00 , H02K3/38
CPC分类号： H01B19/04 , B32B27/281 , C23C14/00 , C23C14/562 , C23C16/545 , H01B3/306 , H01B7/292 , H01B17/60 , Y10T29/49885 , Y10T428/2495 , Y10T428/265 , Y10T428/3154 , Y10T428/31721 , Y10T428/31725 , Y10T428/31855
摘要： A high-temperature insulation assembly for use in high-temperature electrical machines and a method for forming a high-temperature insulation assembly for insulating conducting material in a high-temperature electrical machine. The assembly includes a polymeric film and at least one ceramic coating disposed on the polymeric film. The polymeric film is disposed over conductive wiring or used as a conductor winding insulator for phase separation and slot liner.
摘要翻译：用于高温电机的高温绝缘组件和用于形成用于在高温电机中绝缘导电材料的高温绝缘组件的方法。组件包括聚合物膜和设置在聚合物膜上的至少一个陶瓷涂层。聚合物膜设置在导电布线之上或用作用于相分离和槽衬的导体绕组绝缘体。

52. 发明授权

US08815750B2 Method for manufacturing a barrier on a sheet and a sheet for PV modules 有权
标题翻译：用于制造PV模块的片材和片材上的阻挡层的方法
公开(公告)号：US08815750B2
公开(公告)日：2014-08-26
申请号：US13811338
申请日：2011-07-12
申请人： Hindrik De Vries
发明人： Hindrik De Vries
IPC分类号： H01L21/31
CPC分类号： H01L21/022 , C23C16/545 , H01L31/03926 , H01L31/048 , H01L31/049 , Y02E10/50
摘要： A method for manufacturing a barrier layer (14) on a flexible substrate (6), and a sheet structure (12) having a combination of these elements. The method comprises depositing an inorganic layer on the substrate in a treatment space (5), the treatment space (5) being formed between at least two electrodes (2, 3) for generating an atmospheric pressure glow discharge plasma. At least three subsequent layers of the same material are deposited on the substrate (6a, 6b), each layer being at most 20 nm in thickness.
摘要翻译：一种用于在柔性基板（6）上制造阻挡层（14）的方法，以及具有这些元件组合的片状结构（12）。该方法包括在处理空间（5）中的衬底上沉积无机层，处理空间（5）形成在用于产生大气压辉光放电等离子体的至少两个电极（2,3）之间。相同材料的至少三个后续层被沉积在衬底（6a，6b）上，每层的厚度最大为20nm。

53. 发明申请

US20140212600A1 COMMON DEPOSITION PLATFORM, PROCESSING STATION, AND METHOD OF OPERATION THEREOF 有权
标题翻译：共同沉积平台，加工站及其操作方法
公开(公告)号：US20140212600A1
公开(公告)日：2014-07-31
申请号：US13871899
申请日：2013-04-26
申请人： Morrison NEIL , Jose Manuel DIEGUEZ-CAMPO , Heike LANDGRAF , Tobias STOLLEY , Stefan HEIN , Florian RIES , Wolfgang BUSCHBECK
发明人： Morrison NEIL , Jose Manuel DIEGUEZ-CAMPO , Heike LANDGRAF , Tobias STOLLEY , Stefan HEIN , Florian RIES , Wolfgang BUSCHBECK
IPC分类号： C23C16/54 , C23C16/50
CPC分类号： C23C16/545 , C23C16/45517 , C23C16/45519 , C23C16/50 , H01J37/32449 , H01J37/32513 , H01J37/32568 , H01J37/32752 , H01J37/32761 , H01J37/3277
摘要： An apparatus includes a substrate support having an outer surface for guiding the substrate through a first vacuum processing region and at least one second vacuum processing region. First and second deposition sources correspond to the first processing region and at least one second deposition source corresponds to the at least one second vacuum processing region, wherein at least the first deposition source includes an electrode having a surface that opposes the substrate support. A processing gas inlet and a processing gas outlet are arranged at opposing sides of the surface of the electrode. At least one separation gas inlet how one or more openings, wherein the one or more openings are at least provided at one of opposing sides of the electrode surface such that the processing gas inlet and/or the processing gas outlet are provided between the one or more openings and the surface of the electrode.
摘要翻译：一种设备包括具有用于引导基板通过第一真空处理区域和至少一个第二真空处理区域的外表面的基板支撑件。第一和第二沉积源对应于第一处理区域，并且至少一个第二沉积源对应于至少一个第二真空处理区域，其中至少第一沉积源包括具有与基板支撑件相对的表面的电极。处理气体入口和处理气体出口布置在电极表面的相对侧。至少一个分离气体入口如何一个或多个开口，其中所述一个或多个开口至少设置在电极表面的相对侧中的一个处，使得处理气体入口和/或处理气体出口设置在该一个或多个开口之间，更多的开口和电极的表面。

54. 发明授权

US08785316B2 Methods for forming semiconductor materials by atomic layer deposition using halide precursors 失效
标题翻译：通过使用卤化物前体的原子层沉积形成半导体材料的方法
公开(公告)号：US08785316B2
公开(公告)日：2014-07-22
申请号：US13933855
申请日：2013-07-02
申请人： Soitec
发明人： Christiaan J. Werkhoven
IPC分类号： H01L21/28
CPC分类号： H01L21/0262 , C23C16/301 , C23C16/4488 , C23C16/45551 , C23C16/545 , H01L21/02538 , H01L21/0254
摘要： Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to a plurality of gas columns. For example, the substrate may be moved relative to a plurality of substantially aligned gas columns, each disposing a different precursor. Thermalizing gas injectors for generating the precursors may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. Deposition systems for forming one or more III-V semiconductor materials on a surface of the substrate may include one or more such thermalizing gas injectors configured to direct the precursor to the substrate via the plurality of gas columns.
摘要翻译：将III-V族半导体材料沉积在衬底上的方法包括通过相对于多个气体柱改变衬底的空间定位，将III族元素的气态前体和V族元素的气态前体顺序地引入衬底。例如，衬底可以相对于多个基本排列的气体柱移动，每个气体柱设置不同的前体。用于产生前体的热化气体注入器可以包括入口，热化管道，配置成将液体试剂保持在其中的液体容器和出口。用于在衬底的表面上形成一个或多个III-V半导体材料的沉积系统可以包括一个或多个这样的热化气体注入器，其构造成经由多个气体柱将前体引导到衬底。

55. 发明授权

US08784937B2 Glass substrates having carbon nanotubes grown thereon and methods for production thereof 有权
标题翻译：具有碳纳米管生长的玻璃基板及其制造方法
公开(公告)号：US08784937B2
公开(公告)日：2014-07-22
申请号：US13230751
申请日：2011-09-12
申请人： Brandon K. Malet , Tushar K. Shah
发明人： Brandon K. Malet , Tushar K. Shah
IPC分类号： C23C16/00 , C01B31/02 , D01F9/127 , C03C25/10 , C03C25/22 , C03C25/44 , B82Y30/00 , C23C16/26 , C23C16/458 , C23C16/54 , B05D3/10
CPC分类号： B05D3/10 , B01J21/185 , B01J23/75 , B01J35/06 , B01J37/0213 , B05D2203/35 , B05D2256/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B32/164 , C01B2202/34 , C03C17/28 , C03C25/1095 , C03C25/223 , C03C25/24 , C03C25/44 , C23C16/26 , C23C16/458 , C23C16/545 , D01F9/127 , Y10S977/843 , Y10S977/891 , Y10T428/25
摘要： Methods for growing carbon nanotubes on glass substrates, particularly glass fiber substrates, are described herein. The methods can include depositing a catalytic material or a catalyst precursor on a glass substrate; depositing a non-catalytic material on the glass substrate prior to, after, or concurrently with the catalytic material or catalyst precursor; and exposing the glass substrate to carbon nanotube growth conditions so as to grow carbon nanotubes thereon. The glass substrate, particularly a glass fiber substrate, can be transported while the carbon nanotubes are being grown thereon. Catalyst precursors can be converted into a catalyst when exposed to carbon nanotube growth conditions. The catalytic material or catalyst precursor and the non-catalytic material can be deposited from a solution containing water as a solvent. Illustrative deposition techniques include, for example, spray coating and dip coating.
摘要翻译：本文描述了在玻璃基底，特别是玻璃纤维基底上生长碳纳米管的方法。所述方法可以包括在玻璃基底上沉积催化材料或催化剂前体; 在催化材料或催化剂前体之前，之后或同时在玻璃基板上沉积非催化材料; 并将玻璃基板暴露于碳纳米管生长条件，以便在其上生长碳纳米管。玻璃基板，特别是玻璃纤维基板，可以在碳纳米管在其上生长的同时被输送。当暴露于碳纳米管生长条件时，催化剂前体可以转化为催化剂。催化剂材料或催化剂前体和非催化材料可以从含有水作为溶剂的溶液沉积。示例性沉积技术包括例如喷涂和浸涂。

56. 发明授权

US08746309B2 Position controller for flexible substrate 失效
标题翻译：位置控制器用于柔性基板
公开(公告)号：US08746309B2
公开(公告)日：2014-06-10
申请号：US13381051
申请日：2010-12-21
申请人： Takanori Yamada , Shoji Yokoyama
发明人： Takanori Yamada , Shoji Yokoyama
IPC分类号： B32B37/00 , B29C65/00
CPC分类号： B29C66/95 , B29C66/90 , C23C14/562 , C23C16/545 , H01L21/67259 , H01L21/67706 , H01L21/67721 , H01L21/6776 , H01L31/206 , Y02E10/50 , Y02P70/521 , Y10T156/17 , Y10T156/1741
摘要： Provided is a position controller for a flexible substrate (100) provided in a processing apparatus conveying a band-shaped flexible substrate (1) in a longitudinal position, in the lateral direction and processing the substrate in a processing unit (20) installed on a conveying path of the substrate. The position controller for the flexible substrate includes a pair of sandwiching rollers (131 and 132) that sandwiches an upper edge of the substrate; a supporting mechanism (140) that supports the pair of sandwiching rollers so as to be rotatable and movable close to or away from each other; an urging device (150) that applies a pressing force to the pair of sandwiching rollers through the supporting mechanism; and a pressing force adjusting device (160) adjusting the pressing force from the urging device, wherein each roller constituting the pair of sandwiching rollers is a conical roller having a circumferential surface inclined with respect to the axial direction, and is supported to the supporting mechanism so that a small diameter side of each conical roller is located at a center side of the substrate in the lateral direction and the rotation direction of a sandwiching surface of the substrate is the same as the conveying direction of the substrate.
摘要翻译：提供了一种用于柔性基板（100）的位置控制器，该柔性基板设置在沿横向方向沿纵向位置传送带状柔性基板（1）的处理设备中，并且在处理单元（20）中处理基板，所述处理单元（20）安装在衬底的输送路径。用于柔性基板的位置控制器包括夹持基板的上边缘的一对夹持辊（131和132）支撑机构（140），其支撑所述一对夹持辊以能够彼此靠近或远离地旋转和移动; 推动装置（150），其通过所述支撑机构对所述一对夹持辊施加按压力; 以及调整来自推动装置的按压力的按压力调节装置（160），其中构成所述一对夹持辊的每个辊是具有相对于轴向倾斜的周向表面的圆锥形辊，并且支撑在支撑机构使得每个圆锥形辊的小直径侧在横向方向上位于基板的中心侧，并且基板的夹持表面的旋转方向与基板的输送方向相同。

57. 发明申请

US20140141218A1 LAMINATE BODY, GAS BARRIER FILM, METHOD OF MANUFACTURING LAMINATE BODY, AND LAMINATE BODY MANUFACTURING APPARATUS 审中-公开
标题翻译：层压体，气体阻隔膜，制造层压体的方法和层压体制造装置
公开(公告)号：US20140141218A1
公开(公告)日：2014-05-22
申请号：US14164766
申请日：2014-01-27
申请人： TOPPAN PRINTING CO., LTD.
发明人： Toshiaki Yoshihara , Kyoko Kuroki , Mitsuru Kano , Jin Sato
IPC分类号： C23C16/458
CPC分类号： C23C16/458 , C23C16/403 , C23C16/45544 , C23C16/45555 , C23C16/545 , C23C16/56 , Y10T428/2495
摘要： A laminate body of the present invention includes a base material, an atomic layer deposition film that is formed along the outer surface of the base material, and an overcoat layer that covers the atomic layer deposition film with a film having a mechanical strength higher than that of the atomic layer deposition film.
摘要翻译：本发明的层压体包括基材，沿着基材的外表面形成的原子层沉积膜和覆盖原子层沉积膜的机械强度高于其的机械强度的膜的外涂层。的原子层沉积膜。

58. 发明授权

US08673436B2 Nanoengineered material for hydrogen storage 有权
标题翻译：用于储氢的纳米工程材料
公开(公告)号：US08673436B2
公开(公告)日：2014-03-18
申请号：US11615572
申请日：2006-12-22
申请人： Michael A. Miller , Kent Edward Coulter , James H. Arps
发明人： Michael A. Miller , Kent Edward Coulter , James H. Arps
IPC分类号： B32B5/16 , B05D3/00 , C23C16/00
CPC分类号： C23C14/06 , C01B3/0031 , C01B3/0078 , C01B3/0084 , C23C14/0005 , C23C14/562 , C23C16/01 , C23C16/30 , C23C16/545 , C23C26/00 , C23C30/00 , H01M8/04216 , Y02E60/327 , Y02E60/364
摘要： The present invention relates to nanostructured material capable of storing hydrogen. The nanostructured material may be configured with a selected geometry to provide the capability to influence and increase the limiting or theoretical gravimetric storage level (GSL) of hydrogen for a given chemical composition.
摘要翻译：本发明涉及能够储存氢的纳米结构材料。纳米结构材料可以被配置成具有选定的几何形状以提供影响和增加给定化学组成的氢的限制性或理论重量储存水平（GSL）的能力。

59. 发明申请

US20140050861A1 SYSTEM AND METHOD FOR SURFACE MODIFICATION BY LASER DIFFUSION 审中-公开
标题翻译：通过激光扩散进行表面改性的系统和方法
公开(公告)号：US20140050861A1
公开(公告)日：2014-02-20
申请号：US13969055
申请日：2013-08-16
申请人： University of Central Florida Research Foundation, Inc.
发明人： RAJAN VAIDYANATHAN , ARAVINDA KAR
IPC分类号： C23C16/56
CPC分类号： C23C16/56 , A61L27/306 , A61L31/088 , A61L2420/02 , A61L2420/06 , A61N1/086 , A61N1/375 , C23C10/28 , C23C16/483 , C23C16/545
摘要： A method of forming surface modified substrates includes providing a substrate of material (M) having a bulk portion and an outer surface integrated with the bulk portion. A coating is deposited including metal organic molecules including at least one metal X or particles of metal X onto the outer surface. The coating is laser irradiated with a laser beam, where atoms of metal X diffuse into the outer surface to form a modified surface layer including both M and atoms of metal X on the bulk portion. The modified surface layer has a thickness of at least 1 nm, and a 25° C. electrical conductivity that is at least 2.5% above or 2.5% below a 25° C. electrical conductivity in the bulk portion.
摘要翻译：形成表面改性基材的方法包括提供具有本体部分的材料（M）的基底和与本体部分成一体的外表面。沉积包括至少一种金属X或金属X的金属的金属有机分子的涂层到外表面上。用激光束对激光束进行激光照射，其中金属X的原子扩散到外表面以形成在本体部分上包括M和金属X原子的改性表面层。改性表面层具有至少1nm的厚度和25℃的电导率，其比本体部分中25℃的电导率高至少2.5％或2.5％。

60. 发明授权

US08637117B2 Inhibiting excess precursor transport between separate precursor zones in an atomic layer deposition system 有权
标题翻译：在原子层沉积系统中抑制分离的前体区之间的过量前体转运
公开(公告)号：US08637117B2
公开(公告)日：2014-01-28
申请号：US12905045
申请日：2010-10-14
申请人： Eric R. Dickey , William A. Barrow
发明人： Eric R. Dickey , William A. Barrow
IPC分类号： C23C16/455 , C23C16/28
CPC分类号： C23C16/545 , C23C16/403 , C23C16/45544
摘要： Systems and methods for ALD thin film deposition include a mechanism for removing excess non-chemisorbed precursors from the surface of a substrate in a translation-based process involving multiple separate precursor zones. Excess precursor removal mechanisms according to the present disclosure may introduce localized high temperature conditions, high energy conditions, or azeotropes of the excess precursor, to liberate the excess precursor before it reaches a separate precursor zone, thereby inhibiting CVD deposition from occurring without causing heat-induced degradation of the substrate.
摘要翻译：用于ALD薄膜沉积的系统和方法包括用于在涉及多个分离的前体区的基于平移的方法中从基底表面去除多余的非化学吸附的前体的机理。根据本公开的过量的前体去除机构可以引入局部高温条件，高能量条件或过量前体的共沸物，以在过量前体到达分离的前体区之前释放过量的前体，由此抑制CVD沉积而不引起热 - 导致底物的降解。

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